MOC3052SR2M [ONSEMI]
三路驱动器光耦合器,6 引脚 DIP 随机相;型号: | MOC3052SR2M |
厂家: | ONSEMI |
描述: | 三路驱动器光耦合器,6 引脚 DIP 随机相 驱动 光电 驱动器 |
文件: | 总13页 (文件大小:420K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOC3051M, MOC3052M,
MOC3053M
6-Pin DIP Random-Phase
Triac Driver Optocoupler
(600 Volt Peak)
www.onsemi.com
The MOC3051M, MOC3052M and MOC3053M consist of a GaAs
infrared emitting diode optically coupled to a non−zero− crossing
silicon bilateral AC switch (triac). These devices isolate low voltage
logic from 115 V and 240 V lines to provide random phase
AC
AC
control of high current triacs or thyristors. These devices feature
greatly enhanced static dv/dt capability to ensure stable switching
performance of inductive loads.
PDIP6
CASE 646BY
Features
• Excellent I Stability—IR Emitting Diode Has Low Degradation
FT
• 600 V Peak Blocking Voltage
• Safety and Regulatory Approvals
♦ UL1577, 4,170 VAC
for 1 Minute
RMS
♦ DIN EN/IEC60747−5−5
Typical Applications
• Solenoid/Valve Controls
• Lamp Ballasts
PDIP6
CASE 646BZ
PDIP6
CASE 646BX
• Static AC Power Switch
MARKING DIAGRAM
• Interfacing Microprocessors to 115 V and 240 V Peripherals
• Solid State Relay
AC
AC
• Incandescent Lamp Dimmers
• Temperature Controls
• Motor Controls
MOC3051
V X YY Q
ON
MOC3051
= ON Semiconductor Logo
= Device Code
V
X
YY
Q
= DIN EN/IEC60747−5−5 Option
= One−Digit Year Code
= Two−Digit Work Week,
= Assembly Package Code
PIN CONNECTIONS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2019 − Rev. 3
MOC3052M/D
MOC3051M, MOC3052M, MOC3053M
SAFETY AND INSULATIONS RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 V
< 300 V
I–IV
I–IV
RMS
RMS
Climatic Classification
40/85/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V , Type and
1360
Vpeak
IORM
PR
Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1594
Vpeak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
≥ 7
Vpeak
Vpeak
mm
IORM
V
IOTM
External Clearance
≥ 7
mm
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
≥ 10
≥ 0.5
mm
DTI
mm
9
R
Insulation Resistance at T , V = 500 V
> 10
W
IO
S
IO
www.onsemi.com
2
MOC3051M, MOC3052M, MOC3053M
MAXIMUM RATINGS T = 25°C unless otherwise specified.
A
Symbol
Parameter
Value
Unit
TOTAL DEVICE
T
Storage Temperature
−40 to +150
−40 to +85
−40 to +100
260 for 10 seconds
330
°C
°C
STG
OPR
T
Operating Temperature
Junction Temperature Range
Lead Solder Temperature
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation at 25°C Ambient
Derate Above 25°C
mW
mW/°C
D
4.4
EMITTER
I
Continuous Forward Current
Reverse Voltage
60
3
mA
V
F
V
P
R
Total Power Dissipation at 25°C Ambient
Derate Above 25°C
100
1.33
mW
D
mW/°C
DETECTOR
V
Off−State Output Terminal Voltage
600
1
V
A
DRM
TSM
I
Peak Non−Repetitive Surge Current (Single Cycle 60 Hz Sine Wave)
Total Power Dissipation at 25°C Ambient
Derate Above 25°C
P
300
4
mW
mW/°C
D
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameters
Characteristic
Min
Typ
Max
Unit
EMITTER
V
Input Forward Voltage
I = 10 mA
1.18
0.05
1.50
100
V
F
F
I
R
Reverse Leakage Current
V = 3 V
R
mA
DETECTOR
I
Peak Blocking Current, Either Direction
Peak On−State Voltage, Either Direction
Critical Rate of Rise of Off−State Voltage
V
= 600 V, I = 0
10
100
2.5
nA
V
DRM
DRM
F
(Note 1)
V
I
F
= 100 mA peak,
2.2
TM
TM
I = 0
dv/dt
I = 0, V
F
= 600 V
1000
V/ms
DRM
TRANSFER CHARACTERISTICS
Symbol
DC Characteristic
Test Conditions
Device
MOC3051M
Min
Typ
Max
15
10
6
Unit
I
FT
LED Trigger Current,
Either Direction
Main Terminal
Voltage = 3 V (Note 2)
mA
MOC3052M
MOC3053M
All
I
H
Holding Current,
Either Direction
540
mA
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3
MOC3051M, MOC3052M, MOC3053M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ISOLATION CHARACTERISTICS
V
ISO
R
ISO
C
ISO
Input−Output Isolation Voltage (Note 3)
Isolation Resistance
f = 60 Hz, t = 1 Minute
4170
VAC
RMS
11
V
I−O
= 500 V
10
W
DC
Isolation Capacitance
V = 0 V, f = 1 MHz
0.2
pF
1. Test voltage must be applied within dv/dt rating.
2. All devices will trigger at an I value greater than or equal to the maximum I specification. For optimum operation over temperature and
F
FT
lifetime of the device, the LED should be biased with an I that is at least 50% higher than the maximum I specification. The I should not
F
FT
F
exceed the absolute maximum rating of 60 mA.
Example: For MOC3052M, the minimum I bias should be 10 mA x 150% = 15 mA.
F
3. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
ISO
common.
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4
MOC3051M, MOC3052M, MOC3053M
TYPICAL CHARACTERISTICS
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
400
300
200
100
0
T
= −40°C
= 25°C
A
−100
−200
−300
−400
T
A
T
= 85°C
A
1
10
100
−3
−2
−1
0
1
2
3
I
F
− LED FORWARD CURRENT (mA)
V
TM
− ON−STATE VOLTAGE (V)
Figure 1. LED Forward Voltage vs. Forward Current
Figure 2. On−State Characteristics
1.4
15
10
5
NORMALIZED TO T = 25°C
NORMALIZED TO PW = 100 μs
A
1.2
1.0
0.8
0.6
0
−40
−20
0
20
40
60
80
100
1
10
100
PW − LED TRIGGER PULSE WIDTH (ms)
T
A
− AMBIENT TEMPERATURE (°C)
Figure 3. LED Trigger Current vs. Ambient
Temperature
Figure 4. LED Trigger Current vs. LED Pulse Width
4
3
2
1
0
10000
V
DRM
= 600 V
NORMALIZED TO T = 25°C
A
1000
100
10
1
0.1
−40
−20
0
20
40
60
80
100
−40
−20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Holding Current vs. Ambient
Temperature
Figure 6. Leakage Current vs. Ambient
Temperature
www.onsemi.com
5
MOC3051M, MOC3052M, MOC3053M
APPLICATIONS INFORMATION
Basic Triac Driver Circuit
LED Trigger Current vs. Pulse Width
The random phase triac drivers MOC3051M,
MOC3052M and MOC3053M can allow snubberless
operations in applications where load is resistive and the
external generated noise in the AC line is below its
guaranteed dv/dt withstand capability. For these
applications, a snubber circuit is not necessary when a noise
insensitive power triac is used. Figure 7 shows the circuit
diagram. The triac driver is directly connected to the triac
main terminal 2 and a series resistor R which limits the
current to the triac driver. Current limiting resistor R must
have a minimum value which restricts the current into the
driver to maximum 1 A.
Random phase triac drivers are designed to be phase
controllable. They may be triggered at any phase angle
within the AC sine wave. Phase control may be
accomplished by an AC line zero cross detector and a
variable pulse delay generator which is synchronized to the
zero cross detector. The same task can be accomplished by
a microprocessor which is synchronized to the AC zero
crossing. The phase controlled trigger current may be a very
short pulse which saves energy delivered to the input LED.
LED trigger pulse currents shorter than 100 ms must have
increased amplitude as shown on Figure 4. This graph shows
the dependency of the trigger current I versus the pulse
FT
The power dissipation of this current limiting resistor and
the triac driver is very small because the power triac carries
the load current as soon as the current through driver and
current limiting resistor reaches the trigger current of the
power triac. The switching transition times for the driver is
only one micro second and for power triacs typical four
micro seconds.
width. I in this graph is normalized in respect to the
FT
minimum specified I
for static condition, which is
FT
specified in the device characteristic. The normalized I
FT
has to be multiplied with the devices guaranteed static
trigger current.
Example:
I
= 10 mA, Trigger PW = 4 ms
FT
I (pulsed) = 10 mA × 3 = 30 mA
F
Triac Driver Circuit for Noisy Environments
When the transient rate of rise and amplitude are expected
to exceed the power triacs and triac drivers maximum
ratings a snubber circuit as shown in Figure 8 is
recommended. Fast transients are slowed by the R−C
snubber and excessive amplitudes are clipped by the Metal
Oxide Varistor MOV.
Minimum LED Off Time in Phase Control Applications
In phase control applications, one intends to be able to
control each AC sine half wave from 0° to 180°. Turn on at
0° means full power and turn on at 180° means zero power.
This is not quite possible in reality because triac driver and
triac have a fixed turn on time when activated at zero
degrees. At a phase control angle close to 180° the driver’s
turn on pulse at the trailing edge of the AC sine wave must
be limited to end 200 ms before AC zero cross as shown in
Figure10. This assures that the triac driver has time to switch
off. Shorter times may cause loss of control at the following
half cycle.
Triac Driver Circuit for Extremely Noisy Environments
As specified in the noise standards IEEE472 and
IEC255−4.
Industrial control applications do specify a maximum
transient noise dv/dt and peak voltage which is
super−imposed onto the AC line voltage. In order to pass this
environment noise test a modified snubber network as
shown in Figure 9 is recommended.
Static dv/dt
Critical rate of rise of off−state voltage or static dv/dt is a
triac characteristic that rates its ability to prevent false
triggering in the event of fast rising line voltage transients
when it is in the off−state. When driving a discrete power
triac, the triac driver optocoupler switches back to off−state
once the power triac is triggered. However, during the
commutation of the power triac in application where the
load is inductive, both triacs are subjected to fast rising
voltages. The static dv/dt rating of the triac driver
optocoupler and the commutating dv/dt rating of the power
triac must be taken into consideration in snubber circuit
design to prevent false triggering and commutation failure.
LED Trigger Current versus Temperature
Recommended operating LED control current I lies
F
between the guaranteed I and absolute maximum I .
FT
F
Figure 3 shows the increase of the trigger current when the
device is expected to operate at an ambient temperature
below 25°C. Multiply the datasheet guaranteed I with the
FT
normalized I shown on this graph and an allowance for
FT
LED degradation over time.
Example:
I
= 10 mA, LED degradation factor = 20%
FT
I at −40°C = 10 mA × 1.25 × 120% = 15 mA
F
www.onsemi.com
6
MOC3051M, MOC3052M, MOC3053M
TRIAC DRIVER
V
CC
R
R
POWER TRIAC
LED
AC LINE
CONTROL
RET.
Q
LOAD
R
= (V − V LED − V
Q) / I
SAT FT
LED
CC
F
R = V AC / I
P
TSM
Figure 7. Basic Driver Circuit
TRIAC DRIVER
V
CC
R
R
POWER TRIAC
LED
R
S
AC LINE
MOV
C
S
CONTROL
RET.
LOAD
Typical Snubber values R = 33 W, C = 0.01 mF
S
S
MOV (Metal Oxide Varistor) protects power triac and
driver from transient overvoltages > V max
DRM
Figure 8. Triac Driver Circuit for Noisy Environments
POWER TRIAC
TRIAC DRIVER
V
CC
R
R
LED
R
MOV
S
AC LINE
C
CONTROL
RET.
S
LOAD
Recommended snubber to pass IEEE472 and IEC255−4 noise tests
= 47 W, C = 0.01 mF
R
S
S
Figure 9. Triac Driver Circuit for Extremely Noisy Environments
AC Line
0°
180°
LED PW
LED Current
LED turn off min. 200 ms
Figure 10. Minimum Time for LED Turn Off to Zero Crossing
www.onsemi.com
7
MOC3051M, MOC3052M, MOC3053M
REFLOW PROFILE
Figure 11. Reflow Profile
Profile Feature
Pb−Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60 seconds to 120 seconds
3°C/second maximum
217°C
S
Ramp−up Rate (T to T )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 seconds to 150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
www.onsemi.com
8
MOC3051M, MOC3052M, MOC3053M
ORDERING INFORMATION (Note 4)
Device
Package
Shipping
MOC3051M
DIP 6−Pin
Tube (50 Units)
Tube (50 Units)
MOC3051SM
SMT 6−Pin (Lead Bend)
SMT 6−Pin (Lead Bend)
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
MOC3051SR2M
MOC3051VM
Tape and Reel (1000 Units)
Tube (50 Units)
MOC3051SVM
SMT 6−Pin (Lead Bend),
DIN EN/IEC60747−5−5 Option
Tube (50 Units)
MOC3051SR2VM
MOC3051TVM
SMT 6−Pin (Lead Bend),
Tape and Reel (1000 Units)
Tube (50 Units)
DIN EN/IEC60747−5−5 Option
DIP 6−Pin, 0.4” Lead Spacing,
DIN EN/IEC60747−5−5 Option
4. The product orderable part number system listed in this table also applies to the MOC3052M and MOC3053M product families.
www.onsemi.com
9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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