MOC217M [ONSEMI]
8 引脚 SOIC 单沟道光电晶体管输出光耦合器;
| 型号： | MOC217M |
| 厂家： | 
ONSEMI |
| 描述： | 8 引脚 SOIC 单沟道光电晶体管输出光耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总8页 (文件大小：306K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8-pin SOIC Single-Channel
Phototransistor Output
Optocoupler
MOC205M, MOC206M,
MOC207M, MOC211M,
MOC212M, MOC213M,
MOC216M, MOC217M
www.onsemi.com
Description
These devices consist of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector, in a
surface mountable, small outline, plastic package. They are ideally
suited for high−density applications, and eliminate the need for
through−the−board mounting.
SOIC8
CASE 751DZ
MARKING DIAGRAM
Features
ON
XXX
VXYYS
• Closely Matched Current Transfer Ratios Minimum BV
Guaranteed
of 70 V
CEO
XXX = Specific Device Code
♦ MOC205M, MOC206M, MOC207M
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with this
option)
• Minimum BV
of 30 V Guaranteed
CEO
♦ MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
• Low LED Input Current Required for Easier Logic Interfacing
♦ MOC216M, MOC217M
X
YY
S
= Year Code
= Work Week
= Assembly Package Code
• Convenient Plastic SOIC−8 Surface Mountable Package Style, with
0.050” Lead Spacing
SCHEMATIC
• Safety and Regulatory Approvals:
♦ UL1577, 2,500 VAC
for 1 Minute
RMS
♦ DIN−EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
• These are Pb−Free Devices
ANODE
1
8 N/C
Applications
CATHODE 2
N/C 3
7 BASE
• Feedback Control Circuits
• Interfacing and Coupling Systems of Different Potentials and
Impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits
6 COLLECTOR
5 EMITTER
N/C 4
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2021 − Rev. 2
MOC217M/D
MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains
Voltage
<150 VRMS
<300 VRMS
I–IV
I–III
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
V
PR
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample Test
904
V
peak
IORM
PR
with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V , 100% Production Test
1060
V
peak
IORM
PR
with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
565
4000
≥4
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
External Clearance
≥4
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥0.4
150
200
300
T
S
I
Input Current (Note 1)
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Rating
Value
Unit
TOTAL DEVICE
T
Storage Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
240
°C
°C
STG
T
Ambient Operating Temperature
Junction Temperature
A
T
J
°C
T
Lead Solder Temperature
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
2.94
EMITTER
I
Continuous Forward Current
Forward Current – Peak (PW = 100 ms, 120 pps)
Reverse Voltage
60
1.0
6.0
90
mA
A
F
I (pk)
F
V
P
V
R
D
LED Power Dissipation @ T = 25°C
mW
mW/°C
A
Derate above 25°C
0.8
DETECTOR
I
Continuous Collector Current
Collector−Emitter Voltage
Emitter−Collector Voltage
150
30
mA
V
C
V
V
CEO
ECO
7
V
P
D
Detector Power Dissipation @ T = 25°C
150
1.76
mW
mW/°C
A
Derate above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
2
MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
EMITTER
Input Forward Voltage
MOC216M, MOC217M
I = 1 mA
−
−
1.07
1.15
1.3
1.5
V
V
F
V
F
MOC205M, MOC206M,
MOC207M MOC211M,
MOC212M, MOC213M
I = 10 mA
F
I
Reverse Leakage Current
Input Capacitance
V
R
= 6 V
−
−
0.001
18
100
mA
R
C
−
pF
IN
DETECTOR
I
Collector−Emitter Dark Current
V
V
I
= 10 V, T = 25°C
−
−
1.0
1.0
100
50
−
nA
mA
V
CEO1
CE
A
I
= 10 V, T = 100°C
A
CEO2
CE
BV
Collector−Emitter
MOC205M, MOC206M,
MOC207M
70
−
= 100 mA
CEO
C
Breakdown Voltage
MOC211M, MOC212M,
MOC213M, MOC216M,
MOC217M
I
C
= 100 mA
30
100
−
V
BV
BV
C
Collector−Base Breakdown Voltage
Emitter−Collector Breakdown Voltage
Collector−Emitter Capacitance
I
= 10 mA
70
7
120
10
7
−
−
−
V
V
CBO
ECO
CE
C
I = 100 mA
E
f = 1.0 MHz, V = 0 V
−
pF
CE
COUPLED
CTR
Collector−Output Current
MOC205M
MOC206M
MOC207M
MOC211M
MOC212M
MOC213M
MOC216M
MOC217M
I = 10 mA, V = 10 V
40
63
−
−
−
−
−
−
−
−
−
80
125
200
−
%
%
%
%
%
%
%
%
V
F
CE
I = 10 mA, V = 10 V
F
CE
I = 10 mA, V = 10 V
100
20
F
CE
I = 10 mA, V = 10 V
F
CE
I = 10 mA, V = 10 V
50
−
F
CE
I = 10 mA, V = 10 V
100
50
−
F
CE
I = 1 mA, V = 5 V
−
F
CE
I = 1 mA, V = 5 V
100
−
−
F
CE
V
Collector−Emitter
Saturation Voltage
MOC205M, MOC206M,
MOC207M MOC211M,
MOC212M, MOC213M
I
C
= 2 mA, I = 10 mA
0.4
CE(SAT)
F
MOC216M, MOC217M
I
I
= 100 mA, I = 1 mA
−
−
−
0.4
V
C
F
t
t
Turn−On Time
Turn−Off Time
Rise Time
= 2 mA, V = 10 V,
7.5
−
ms
on
C
CC
R = 100 W (Figure 12)
L
I
= 2 mA, V = 10 V,
L
−
−
−
5.7
3.2
4.7
−
−
−
ms
ms
ms
off
C
CC
R = 100 W (Figure 12)
t
r
I = 2 mA, V = 10 V,
C CC
R = 100 W (Figure 12)
L
t
f
Fall Time
I = 2 mA, V = 10 V,
C CC
R = 100 W (Figure 12)
L
ISOLATION CHARACTERISTICS
V
ISO
C
ISO
R
ISO
Input−Output Isolation Voltage
Isolation Capacitance
t = 1 Minute
2500
−
0.2
−
−
−
−
VAC
RMS
V
V
= 0 V, f = 1 MHz
−
pF
I−O
11
Isolation Resistance
=
500 VDC,
10
W
I−O
T = 25°C
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
TYPICAL PERFORMANCE CURVES
10
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
V
= 5 V
CE
NORMALIZED TO I = 10 mA
F
1
T
= −55°C
A
0.1
0.01
T
= 25°C
A
T
A
= 100°C
1
10
100
120
100
0
1
10
100
I , LED FORWARD CURRENT (mA)
I , LED INPUT CURRENT (mA)
F
F
Figure 1. LED Forward Voltage vs. Forward Current
Figure 2. Output Current vs. Input Current
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
I
= 10 mA
NORMALIZED TO V = 5 V
F
NORMALIZED TO T = 25 °C
A
CE
0.1
−80
−60
−40
−20
0
20
40
60
80
100
0
1
2
3
4
5
8
7
8
9
10
T , AMBIENT TEMPERATURE (°C)
A
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 3. Output Current vs. Ambient Temperature
Figure 4. Output Current vs. Collector−Emitter Voltage
10000
1.0
0.9
V
= 10 V
CE
I
F
= 20 mA
1000
100
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
F
= 10 mA
I
F
= 5 mA
1
V
= 5 V, T = 25°C
A
CE
NORMALIZED TO:
CTR AT R = OPEN
BE
0.1
0
20
40
60
80
10
100
1000
T , AMBIENT TEMPERATURE (°C)
A
R
, BASE RESISTANCE (kW)
BE
Figure 5. Dark Current vs. Ambient Temperature
Figure 6. CTR vs. RBE (Unsaturated)
www.onsemi.com
4
MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
TYPICAL PERFORMANCE CURVES (continued)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
R
= 10 V
= 2 mA
= 100 W
CC
C
L
I
F
= 20 mA
NORMALIZED TO:
t
on
AT R = OPEN
BE
I
= 10 mA
F
I
= 5 mA
F
V
= 0.3 V, T = 25°C
A
CE
NORMALIZED TO:
CTR AT R = OPEN
BE
10
100
1000
0.01
0.1
1
10
100
R
, BASE RESISTANCE (kW)
R
, BASE RESISTANCE (MW)
BE
BE
Figure 7. CTR vs. RBE (Saturated)
Figure 8. Normalized ton vs. RBE
1.6
V
= 10 V
CC
I
R
= 2 mA
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= 100 W
L
NORMALIZED TO:
t
off
AT R = OPEN
BE
0.01
0.1
1
10
100
R
, BASE RESISTANCE (MW)
BE
Figure 9. Normalized toff vs. RBE
TEST CIRCUIT
WAVEFORMS
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
t r
tf
t off
t on
Adjust I to produce I = 2 mA
F
C
Figure 10. Switching Time Test Circuit and Waveforms
www.onsemi.com
5
MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
260
240
220
200
180
160
140
120
100
80
tP
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Figure 11. Reflow Profile
Table 1.
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60 – 120 seconds
3°C/second maximum
217°C
S
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 – 150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
ORDERING INFORMATION (Note 2)
Part Number
†
Package
Shipping
MOC205M
Small Outline 8−Pin
100 Units / Tube
2500 / Tape & Reel
100 Units / Tube
MOC205R2M
Small Outline 8−Pin
MOC205VM
Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option
Small Outline 8−Pin, DIN EN/IEC60747−5−5 Option
MOC205R2VM
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC8
CASE 751DZ
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13733G
SOIC8
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
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