MOC206R2VM [ONSEMI]

8-pin SOIC Single-Channel Phototransistor Output Optocoupler, SO 8L NB, 2500-TAPE REEL;
MOC206R2VM
型号: MOC206R2VM
厂家: ONSEMI    ONSEMI
描述:

8-pin SOIC Single-Channel Phototransistor Output Optocoupler, SO 8L NB, 2500-TAPE REEL

输出元件 光电
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
August 2015  
MOC205M, MOC206M, MOC207M,  
MOC211M, MOC212M, MOC213M, MOC216M, MOC217M  
8-pin SOIC Single-Channel Phototransistor Output  
Optocoupler  
Features  
Description  
These devices consist of a gallium arsenide infrared  
emitting diode optically coupled to a monolithic silicon  
phototransistor detector, in a surface mountable, small  
outline, plastic package. They are ideally suited for  
high-density applications, and eliminate the need for  
through-the-board mounting.  
Closely Matched Current Transfer Ratios  
Minimum BVCEO of 70 V Guaranteed  
MOC205M, MOC206M, MOC207M  
Minimum BVCEO of 30 V Guaranteed  
– MOC211M, MOC212M, MOC213M, MOC216M,  
MOC217M  
Low LED Input Current Required for Easier Logic  
Interfacing  
– MOC216M, MOC217M  
Convenient Plastic SOIC-8 Surface Mountable  
Package Style, with 0.050" Lead Spacing  
Safety and Regulatory Approvals:  
– UL1577, 2,500 VACRMS for 1 Minute  
– DIN-EN/IEC60747-5-5, 565 V Peak Working  
Insulation Voltage  
Applications  
Feedback Control Circuits  
Interfacing and Coupling Systems of Different  
Potentials and Impedances  
General Purpose Switching Circuits  
Monitor and Detection Circuits  
Schematic  
Package Outline  
ANODE  
N/C  
1
2
8
7
6
5
CATHODE  
N/C  
BASE  
Figure 2. Package Outline  
COLLECTOR  
EMITTER  
3
4
N/C  
Figure 1. Schematic  
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
Safety and Insulation Ratings  
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit  
data. Compliance with the safety ratings shall be ensured by means of protective circuits.  
Parameter  
Installation Classifications per DIN VDE  
Characteristics  
< 150 VRMS  
< 300 VRMS  
I–IV  
I–III  
0110/1.89 Table 1, For Rated Mains Voltage  
Climatic Classification  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
175  
Symbol  
Parameter  
Value  
Unit  
Vpeak  
Vpeak  
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR  
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC  
,
904  
VPR  
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR  
100% Production Test with tm = 1 s, Partial Discharge < 5 pC  
,
1060  
VIORM  
VIOTM  
Maximum Working Insulation Voltage  
Highest Allowable Over-Voltage  
External Creepage  
565  
4000  
4  
Vpeak  
Vpeak  
mm  
mm  
mm  
°C  
External Clearance  
4  
DTI  
TS  
Distance Through Insulation (Insulation Thickness)  
Case Temperature(1)  
0.4  
150  
IS,INPUT  
Input Current(1)  
200  
mA  
PS,OUTPUT Output Power(1)  
RIO  
Insulation Resistance at TS, VIO = 500 V(1)  
Note:  
300  
> 109  
mW  
Ω
1. Safety limit values – maximum values allowed in the event of a failure.  
©2005 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
MOC20xM, MOC21xM Rev. 1.5  
2
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.  
Symbol  
Rating  
Value  
Unit  
TOTAL DEVICE  
TSTG  
TA  
Storage Temperature  
-40 to +125  
-40 to +100  
-40 to +125  
260 for 10 seconds  
240  
°C  
°C  
Ambient Operating Temperature  
Junction Temperature  
TJ  
°C  
TSOL  
Lead Solder Temperature  
°C  
Total Device Power Dissipation @ TA = 25°C  
Derate above 25°C  
mW  
mW/°C  
PD  
2.94  
EMITTER  
IF  
Continuous Forward Current  
Forward Current – Peak (PW = 100 µs, 120 pps)  
Reverse Voltage  
60  
1.0  
6.0  
90  
mA  
A
IF (pk)  
VR  
V
LED Power Dissipation @ TA = 25°C  
Derate above 25°C  
mW  
mW/°C  
PD  
0.8  
DETECTOR  
IC  
Continuous Collector Current  
Collector-Emitter Voltage  
150  
30  
mA  
V
VCEO  
VECO  
Emitter-Collector Voltage  
7
V
Detector Power Dissipation @ TA = 25°C  
Derate above 25°C  
150  
1.76  
mW  
mW/°C  
PD  
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
3
Electrical Characteristics  
TA = 25°C unless otherwise specified.  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Min. Typ. Max.  
Unit  
Input Forward Voltage  
MOC216M, MOC217M  
IF = 1 mA  
1.07  
1.15  
1.3  
1.5  
V
V
VF  
MOC205M, MOC206M, MOC207M  
MOC211M, MOC212M, MOC213M  
IF = 10 mA  
VR = 6 V  
IR  
Reverse Leakage Current  
Input Capacitance  
0.001  
18  
100  
µA  
pF  
CIN  
DETECTOR  
ICEO1  
VCE = 10 V, TA = 25°C  
VCE = 10 V, TA = 100°C  
1.0  
1.0  
50  
nA  
µA  
Collector-Emitter Dark Current  
ICEO2  
Collector-Emitter Breakdown Voltage  
MOC205M, MOC206M, MOC207M  
IC = 100 µA  
IC = 100 µA  
70  
30  
100  
100  
V
V
BVCEO  
MOC211M, MOC212M, MOC213M,  
MOC216M, MOC217M  
BVCBO Collector-Base Breakdown Voltage  
BVECO Emitter-Collector Breakdown Voltage  
IC = 10 µA  
70  
7
120  
10  
7
V
V
IE = 100 µA  
CCE  
Collector-Emitter Capacitance  
f = 1.0 MHz, VCE = 0  
pF  
COUPLED  
Collector-Output Current  
MOC205M  
IF = 10 mA, VCE = 10 V  
IF = 10 mA, VCE = 10 V  
IF = 10 mA, VCE = 10 V  
IF = 10 mA, VCE = 10 V  
IF = 10 mA, VCE = 10 V  
IF = 10 mA, VCE = 10 V  
IF = 1 mA, VCE = 5 V  
IF = 1 mA, VCE = 5 V  
40  
63  
80  
%
%
%
%
%
%
%
%
MOC206M  
125  
200  
MOC207M  
100  
20  
CTR  
MOC211M  
MOC212M  
50  
MOC213M  
100  
50  
MOC216M  
MOC217M  
100  
Collector-Emitter Saturation Voltage  
MOC205M, MOC206M, MOC207M  
MOC211M, MOC212M, MOC213M  
IC = 2 mA, IF = 10 mA  
IC = 100 µA, IF = 1 mA  
0.4  
0.4  
V
VCE(SAT)  
MOC216M, MOC217M  
V
IC = 2 mA, VCC = 10 V,  
RL = 100 Ω (Figure 12)  
ton  
toff  
tr  
Turn-On Time  
7.5  
5.7  
3.2  
4.7  
µs  
IC = 2 mA, VCC = 10 V,  
RL = 100 Ω (Figure 12)  
Turn-Off Time  
Rise Time  
Fall Time  
µs  
µs  
µs  
IC = 2 mA, VCC = 10 V,  
RL = 100 Ω (Figure 12)  
IC = 2 mA, VCC = 10 V,  
RL = 100 Ω (Figure 12)  
tf  
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
4
Isolation Characteristics  
Symbol  
VISO  
Characteristic  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
VACRMS  
pF  
Input-Output Isolation Voltage t = 1 Minute  
2500  
CISO  
Isolation Capacitance  
Isolation Resistance  
VI-O = 0 V, f = 1 MHz  
0.2  
RISO  
VI-O = ±500 VDC, TA = 25°C  
1011  
Ω
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
5
Typical Performance Curves  
1.8  
1.7  
1.6  
1.5  
1.4  
10  
V
= 5 V  
CE  
NORMALIZED TO IF = 10 mA  
1
T
T
= –55°C  
= 25°C  
A
1.3  
1.2  
1.1  
1.0  
A
0.1  
T
= 100°C  
A
1
10  
100  
IF – LED FORWARD CURRENT (mA)  
0.01  
Figure 3. LED Forward Voltage vs. Forward Current  
0.1  
1
10  
100  
IF – LED INPUT CURRENT (mA)  
Figure 4. Output Curent vs. Input Current  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1
IF = 10 mA  
NORMALIZED TO VCE = 5 V  
NORMALIZED TO TA = 25°C  
0.1  
-80  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
0
1
2
3
4
5
6
7
8
9
10  
VCE – COLLECTOR-EMITTER VOLTAGE (V)  
TA – AMBIENT TEMPERATURE (°C)  
Figure 5. Output Current vs. Ambient Temperature  
Figure 6. Output Current vs. Collector-Emitter Voltage  
10000  
1.0  
0.9  
VCE = 10 V  
1000  
I
= 20 mA  
F
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 10 mA  
= 5 mA  
F
100  
10  
1
I
F
V
= 5V, T = 25°C  
A
Normalized to:  
CE  
CTR at R = Open  
BE  
0.1  
10  
100  
–BASE RESISTANCE (kΩ)  
1000  
0
20  
40  
60  
80  
100  
R
BE  
TA – AMBIENT TEMPERATURE (°C)  
Figure 8. CTR vs. RBE (Unsaturated)  
Figure 7. Dark Current vs. Ambient Temperature  
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
6
Typical Performance Curves (Continued)  
1.0  
0.9  
0.8  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 10 V  
= 2 mA  
CC  
I
C
R
= 100Ω  
L
NORMALIZED TO :  
I
= 20 mA  
F
t
AT R = OPEN  
on  
BE  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 10 mA  
= 5 mA  
F
I
F
V
= 0.3 V,T = 25°C  
A
Normalized to:  
CTR at R = Open  
CE  
BE  
10  
100  
– BASE RESISTANCE (kΩ)  
1000  
0.01  
0.1  
1
10  
100  
R
BE  
R
BE  
BASE RESISTANCE (MΩ)  
Figure 9. CTR vs. RBE (Saturated)  
Figure 10. Normalized t vs. RBE  
on  
1.6  
V
= 10 V  
CC  
I
= 2 mA  
C
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
R
= 100 Ω  
L
NORMALIZED TO :  
t
AT R = OPEN  
off  
BE  
0.01  
0.1  
1
10  
100  
R
– BASE RESISTANCE (MΩ)  
BE  
Figure 11. Normalized toff vs. RBE  
TEST CIRCUIT  
WAVEFORMS  
VCC = 10 V  
INPUT PULSE  
IC  
IF  
RL  
10%  
INPUT  
OUTPUT  
OUTPUT PULSE  
90%  
RBE  
tr  
tf  
toff  
ton  
IF to produce IC = 2 mA  
Adjust  
Figure 12. Switching Time Test Circuit and Waveforms  
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
7
Reflow Profile  
Max. Ramp-up Rate = 3°C/S  
T
Max. Ramp-down Rate = 6°C/S  
P
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
t
P
T
L
Tsmax  
t
L
Preheat Area  
Tsmin  
t
s
60  
40  
20  
0
120  
Time 25°C to Peak  
240  
360  
Time (seconds)  
Figure 13. Reflow Profile  
Profile Freature  
Pb-Free Assembly Profile  
150°C  
Temperature Minimum (Tsmin)  
Temperature Maximum (Tsmax)  
Time (tS) from (Tsmin to Tsmax)  
Ramp-up Rate (tL to tP)  
200°C  
60–120 seconds  
3°C/second maximum  
217°C  
Liquidous Temperature (TL)  
Time (tL) Maintained Above (TL)  
Peak Body Package Temperature  
Time (tP) within 5°C of 260°C  
Ramp-down Rate (TP to TL)  
Time 25°C to Peak Temperature  
60–150 seconds  
260°C +0°C / –5°C  
30 seconds  
6°C/second maximum  
8 minutes maximum  
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
8
Ordering Information(2)  
Part Number  
Package  
Packing Method  
Tube (100 Units)  
MOC205M  
MOC205R2M  
MOC205VM  
MOC205R2VM  
Small Outline 8-Pin  
Small Outline 8-Pin  
Tape and Reel (2500 Units)  
Tube (100 Units)  
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option  
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option  
Tape and Reel (2500 Units)  
Note:  
2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products.  
Marking Information  
1
2
205  
6
V
X YY S  
5
3
4
Figure 14. Top Mark  
Table 1. Top Mark Definitions  
1
2
3
4
5
6
Fairchild Logo  
Device Number  
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)  
One-Digit Year Code, e.g., “4”  
Digit Work Week, Ranging from “01” to “53”  
Assembly Package Code  
©2005 Fairchild Semiconductor Corporation  
MOC20xM, MOC21xM Rev. 1.5  
www.fairchildsemi.com  
9
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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