MOC206R2VM [ONSEMI]
8-pin SOIC Single-Channel Phototransistor Output Optocoupler, SO 8L NB, 2500-TAPE REEL;型号: | MOC206R2VM |
厂家: | ONSEMI |
描述: | 8-pin SOIC Single-Channel Phototransistor Output Optocoupler, SO 8L NB, 2500-TAPE REEL 输出元件 光电 |
文件: | 总12页 (文件大小:344K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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August 2015
MOC205M, MOC206M, MOC207M,
MOC211M, MOC212M, MOC213M, MOC216M, MOC217M
8-pin SOIC Single-Channel Phototransistor Output
Optocoupler
Features
Description
These devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
phototransistor detector, in a surface mountable, small
outline, plastic package. They are ideally suited for
high-density applications, and eliminate the need for
through-the-board mounting.
•
•
Closely Matched Current Transfer Ratios
Minimum BVCEO of 70 V Guaranteed
– MOC205M, MOC206M, MOC207M
Minimum BVCEO of 30 V Guaranteed
•
•
– MOC211M, MOC212M, MOC213M, MOC216M,
MOC217M
Low LED Input Current Required for Easier Logic
Interfacing
– MOC216M, MOC217M
•
•
Convenient Plastic SOIC-8 Surface Mountable
Package Style, with 0.050" Lead Spacing
Safety and Regulatory Approvals:
– UL1577, 2,500 VACRMS for 1 Minute
– DIN-EN/IEC60747-5-5, 565 V Peak Working
Insulation Voltage
Applications
•
•
Feedback Control Circuits
Interfacing and Coupling Systems of Different
Potentials and Impedances
•
•
General Purpose Switching Circuits
Monitor and Detection Circuits
Schematic
Package Outline
ANODE
N/C
1
2
8
7
6
5
CATHODE
N/C
BASE
Figure 2. Package Outline
COLLECTOR
EMITTER
3
4
N/C
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
Characteristics
< 150 VRMS
< 300 VRMS
I–IV
I–III
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Vpeak
Vpeak
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
,
904
VPR
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
,
1060
VIORM
VIOTM
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
565
4000
≥ 4
Vpeak
Vpeak
mm
mm
mm
°C
External Clearance
≥ 4
DTI
TS
Distance Through Insulation (Insulation Thickness)
Case Temperature(1)
≥ 0.4
150
IS,INPUT
Input Current(1)
200
mA
PS,OUTPUT Output Power(1)
RIO
Insulation Resistance at TS, VIO = 500 V(1)
Note:
300
> 109
mW
Ω
1. Safety limit values – maximum values allowed in the event of a failure.
©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
Rating
Value
Unit
TOTAL DEVICE
TSTG
TA
Storage Temperature
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
240
°C
°C
Ambient Operating Temperature
Junction Temperature
TJ
°C
TSOL
Lead Solder Temperature
°C
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
mW
mW/°C
PD
2.94
EMITTER
IF
Continuous Forward Current
Forward Current – Peak (PW = 100 µs, 120 pps)
Reverse Voltage
60
1.0
6.0
90
mA
A
IF (pk)
VR
V
LED Power Dissipation @ TA = 25°C
Derate above 25°C
mW
mW/°C
PD
0.8
DETECTOR
IC
Continuous Collector Current
Collector-Emitter Voltage
150
30
mA
V
VCEO
VECO
Emitter-Collector Voltage
7
V
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
150
1.76
mW
mW/°C
PD
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
3
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
EMITTER
Parameter
Test Conditions
Min. Typ. Max.
Unit
Input Forward Voltage
MOC216M, MOC217M
IF = 1 mA
1.07
1.15
1.3
1.5
V
V
VF
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M
IF = 10 mA
VR = 6 V
IR
Reverse Leakage Current
Input Capacitance
0.001
18
100
µA
pF
CIN
DETECTOR
ICEO1
VCE = 10 V, TA = 25°C
VCE = 10 V, TA = 100°C
1.0
1.0
50
nA
µA
Collector-Emitter Dark Current
ICEO2
Collector-Emitter Breakdown Voltage
MOC205M, MOC206M, MOC207M
IC = 100 µA
IC = 100 µA
70
30
100
100
V
V
BVCEO
MOC211M, MOC212M, MOC213M,
MOC216M, MOC217M
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
IC = 10 µA
70
7
120
10
7
V
V
IE = 100 µA
CCE
Collector-Emitter Capacitance
f = 1.0 MHz, VCE = 0
pF
COUPLED
Collector-Output Current
MOC205M
IF = 10 mA, VCE = 10 V
IF = 10 mA, VCE = 10 V
IF = 10 mA, VCE = 10 V
IF = 10 mA, VCE = 10 V
IF = 10 mA, VCE = 10 V
IF = 10 mA, VCE = 10 V
IF = 1 mA, VCE = 5 V
IF = 1 mA, VCE = 5 V
40
63
80
%
%
%
%
%
%
%
%
MOC206M
125
200
MOC207M
100
20
CTR
MOC211M
MOC212M
50
MOC213M
100
50
MOC216M
MOC217M
100
Collector-Emitter Saturation Voltage
MOC205M, MOC206M, MOC207M
MOC211M, MOC212M, MOC213M
IC = 2 mA, IF = 10 mA
IC = 100 µA, IF = 1 mA
0.4
0.4
V
VCE(SAT)
MOC216M, MOC217M
V
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
ton
toff
tr
Turn-On Time
7.5
5.7
3.2
4.7
µs
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
Turn-Off Time
Rise Time
Fall Time
µs
µs
µs
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
IC = 2 mA, VCC = 10 V,
RL = 100 Ω (Figure 12)
tf
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
4
Isolation Characteristics
Symbol
VISO
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VACRMS
pF
Input-Output Isolation Voltage t = 1 Minute
2500
CISO
Isolation Capacitance
Isolation Resistance
VI-O = 0 V, f = 1 MHz
0.2
RISO
VI-O = ±500 VDC, TA = 25°C
1011
Ω
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
5
Typical Performance Curves
1.8
1.7
1.6
1.5
1.4
10
V
= 5 V
CE
NORMALIZED TO IF = 10 mA
1
T
T
= –55°C
= 25°C
A
1.3
1.2
1.1
1.0
A
0.1
T
= 100°C
A
1
10
100
IF – LED FORWARD CURRENT (mA)
0.01
Figure 3. LED Forward Voltage vs. Forward Current
0.1
1
10
100
IF – LED INPUT CURRENT (mA)
Figure 4. Output Curent vs. Input Current
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
IF = 10 mA
NORMALIZED TO VCE = 5 V
NORMALIZED TO TA = 25°C
0.1
-80
-60
-40
-20
0
20
40
60
80
100
120
0
1
2
3
4
5
6
7
8
9
10
VCE – COLLECTOR-EMITTER VOLTAGE (V)
TA – AMBIENT TEMPERATURE (°C)
Figure 5. Output Current vs. Ambient Temperature
Figure 6. Output Current vs. Collector-Emitter Voltage
10000
1.0
0.9
VCE = 10 V
1000
I
= 20 mA
F
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 10 mA
= 5 mA
F
100
10
1
I
F
V
= 5V, T = 25°C
A
Normalized to:
CE
CTR at R = Open
BE
0.1
10
100
–BASE RESISTANCE (kΩ)
1000
0
20
40
60
80
100
R
BE
TA – AMBIENT TEMPERATURE (°C)
Figure 8. CTR vs. RBE (Unsaturated)
Figure 7. Dark Current vs. Ambient Temperature
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
6
Typical Performance Curves (Continued)
1.0
0.9
0.8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10 V
= 2 mA
CC
I
C
R
= 100Ω
L
NORMALIZED TO :
I
= 20 mA
F
t
AT R = OPEN
on
BE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 10 mA
= 5 mA
F
I
F
V
= 0.3 V,T = 25°C
A
Normalized to:
CTR at R = Open
CE
BE
10
100
– BASE RESISTANCE (kΩ)
1000
0.01
0.1
1
10
100
R
BE
R
BE
– BASE RESISTANCE (MΩ)
Figure 9. CTR vs. RBE (Saturated)
Figure 10. Normalized t vs. RBE
on
1.6
V
= 10 V
CC
I
= 2 mA
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
= 100 Ω
L
NORMALIZED TO :
t
AT R = OPEN
off
BE
0.01
0.1
1
10
100
R
– BASE RESISTANCE (MΩ)
BE
Figure 11. Normalized toff vs. RBE
TEST CIRCUIT
WAVEFORMS
VCC = 10 V
INPUT PULSE
IC
IF
RL
10%
INPUT
OUTPUT
OUTPUT PULSE
90%
RBE
tr
tf
toff
ton
IF to produce IC = 2 mA
Adjust
Figure 12. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
7
Reflow Profile
Max. Ramp-up Rate = 3°C/S
T
Max. Ramp-down Rate = 6°C/S
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
Tsmax
t
L
Preheat Area
Tsmin
t
s
60
40
20
0
120
Time 25°C to Peak
240
360
Time (seconds)
Figure 13. Reflow Profile
Profile Freature
Pb-Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
Time (tS) from (Tsmin to Tsmax)
Ramp-up Rate (tL to tP)
200°C
60–120 seconds
3°C/second maximum
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
60–150 seconds
260°C +0°C / –5°C
30 seconds
6°C/second maximum
8 minutes maximum
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
8
Ordering Information(2)
Part Number
Package
Packing Method
Tube (100 Units)
MOC205M
MOC205R2M
MOC205VM
MOC205R2VM
Small Outline 8-Pin
Small Outline 8-Pin
Tape and Reel (2500 Units)
Tube (100 Units)
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Small Outline 8-Pin, DIN EN/IEC60747-5-5 Option
Tape and Reel (2500 Units)
Note:
2. The product orderable part number system listed in this table also applies to the MOC20XM and MOC21XM products.
Marking Information
1
2
205
6
V
X YY S
5
3
4
Figure 14. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “4”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5
www.fairchildsemi.com
9
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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相关型号:
MOC206VM
Transistor Output Optocoupler, 1-Element, 2500V Isolation, LEAD FREE, PLASTIC, SOIC-8
FAIRCHILD
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