MMUN2233LT1 [ONSEMI]

Bias Resistor Transistor; 偏置电阻晶体管
MMUN2233LT1
型号: MMUN2233LT1
厂家: ONSEMI    ONSEMI
描述:

Bias Resistor Transistor
偏置电阻晶体管

晶体 小信号双极晶体管
文件: 总12页 (文件大小:108K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMUN2211LT1 Series  
Preferred Devices  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the SOT-23  
package which is designed for low power surface mount applications.  
http://onsemi.com  
PIN 3  
COLLECTOR  
(OUTPUT)  
R1  
R2  
PIN 1  
BASE  
PIN 2  
(INPUT)  
EMITTER  
(GROUND)  
Simplifies Circuit Design  
Reduces Board Space and Component Count  
The SOT-23 package can be soldered using wave or reflow. The  
modified gull-winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
MARKING DIAGRAM  
3
3
Available in 8 mm embossed tape and reel. Use the Device  
Number to order the 7 inch/3000 unit reel. Replace “T1” with  
“T3” in the Device Number to order the13 inch/10,000 unit reel.  
1
A8x  
2
1
2
SOT−23  
CASE 318  
STYLE 6  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A8x = Device Code  
= (See Table)  
A
x
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
ORDERING INFORMATION  
V
50  
Vdc  
Device  
Package  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
SOT−23  
Shipping  
I
C
100  
mAdc  
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2241LT1  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Total Power Dissipation @ T = 25°C  
(Note 1) Derate above 25°C  
P
D
*200  
1.6  
mW  
mW/°C  
A
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
A8A  
A8B  
A8C  
A8D  
A8E  
A8F  
R1(K)  
10  
R2(K)  
10  
22  
47  
47  
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2241LT1  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
A8G  
A8H  
A8J  
1.0  
2.2  
4.7  
47  
47  
A8K  
A8L  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
A8R  
A8U  
2.2  
100  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
Publication Order Number:  
May, 2004 − Rev. 4  
MMUN2211LT1/D  
 
MMUN2211LT1 Series  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
625  
Unit  
°C/W  
°C  
Thermal Resistance − Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
θ
JA  
T , T  
65 to +150  
J
stg  
Maximum Temperature for Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector-Base Cutoff Current (V = 50 V, I = 0)  
I
I
100  
500  
nAdc  
nAdc  
mAdc  
CB  
E
CBO  
Collector-Emitter Cutoff Current (V = 50 V, I = 0)  
CE  
B
CEO  
Emitter-Base Cutoff Current  
(V = 6.0 V, I = 0)  
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2241LT1  
I
0.5  
0.2  
0.1  
0.2  
0.9  
1.9  
4.3  
2.3  
1.5  
0.18  
0.13  
4.0  
0.1  
EBO  
EB  
C
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)  
V
V
50  
50  
Vdc  
Vdc  
C
E
(BR)CBO  
Collector-Emitter Breakdown Voltage (Note 2), (I = 2.0 mA, I = 0)  
C
B
(BR)CEO  
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2241LT1  
h
FE  
35  
60  
80  
60  
(V = 10 V, I = 5.0 mA)  
100  
140  
140  
350  
350  
5.0  
15  
30  
200  
150  
350  
350  
CE  
C
80  
160  
160  
3.0  
8.0  
15  
80  
80  
160  
160  
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)  
V
CE(sat)  
0.25  
Vdc  
C
B
(I = 10 mA, I = 5 mA) MMUN2230LT1/MMUN2231LT1  
C
B
(I = 10 mA, I = 1 mA) MMUN2215LT1/MMUN2216LT1  
C
B
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/  
MMUN2238LT1  
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.  
http://onsemi.com  
2
 
MMUN2211LT1 Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
ON CHARACTERISTICS (Note 3)  
Output Voltage (on)  
Symbol  
Min  
Typ  
Max  
Unit  
V
OL  
Vdc  
(V = 5.0 V, V = 2.5 V, R = 1.0 k )  
MMUN2211LT1  
MMUN2212LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2213LT1  
MMUN2241LT1  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
0.2  
CC  
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 k )  
CC  
B
L
(V = 5.0 V, V = 5.0 V, R = 1.0 k )  
CC  
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k )  
V
OH  
4.9  
Vdc  
CC  
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 k )  
MMUN2230LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2233LT1  
MMUN2238LT1  
CC  
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 k )  
CC  
B
L
Input Resistor  
MMUN2211LT1  
MMUN2212LT1  
MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1  
MMUN2216LT1  
MMUN2230LT1  
MMUN2231LT1  
MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
MMUN2238LT1  
MMUN2241LT1  
R1  
7.0  
15.4  
32.9  
7.0  
7.0  
3.3  
0.7  
1.5  
3.3  
3.3  
10  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
13  
28.6  
61.1  
13  
13  
6.1  
1.3  
2.9  
6.1  
6.1  
kΩ  
15.4  
1.54  
70  
28.6  
2.88  
130  
2.2  
100  
Resistor Ratio  
MMUN2211LT1/MMUN2212LT1/MMUN2213LT1  
MMUN2214LT1  
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1  
MMUN2241LT1  
R1/R2  
0.8  
0.17  
1.0  
0.21  
1.2  
0.25  
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1  
MMUN2233LT1  
MMUN2234LT1  
0.8  
0.055  
0.38  
1.0  
0.1  
0.47  
1.2  
0.185  
0.56  
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.  
http://onsemi.com  
3
 
MMUN2211LT1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS  
MMUN2211LT1  
1
250  
200  
I /I = 10  
C
B
T = −25°C  
A
25°C  
75°C  
0.1  
150  
100  
50  
0.01  
R
= 625°C/W  
θ
JA  
0
0.001  
0
20  
40  
60  
80  
−50  
0
50  
100  
150  
T , AMBIENT TEMPERATURE (5°C)  
A
I , COLLECTOR CURRENT (mA)  
C
Figure 1. Derating Curve  
Figure 2. VCE(sat) vs. IC  
4
3
1000  
100  
10  
V
CE  
= 10 V  
f = 1 MHz  
= 0 A  
T = 25°C  
A
l
E
T = 75°C  
A
25°C  
−25°C  
2
1
0
0
10  
20  
30  
40  
50  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
Figure 3. DC Current Gain  
Figure 4. Output Capcitance  
100  
10  
10  
25°C  
V
O
= 0.2 V  
T = −25°C  
A
75°C  
25°C  
T = −25°C  
A
75°C  
1
0.1  
1
0.01  
0.001  
V
= 5 V  
O
0.1  
0
1
2
3
4
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
V , INPUT VOLTAGE (VOLTS)  
in  
I , COLLECTOR CURRENT (mA)  
C
Figure 5. Output Current vs. Input Voltage  
Figure 6. Input Voltage vs. Output Current  
http://onsemi.com  
4
MMUN2211LT1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS  
MMUN2212LT1  
1000  
1
T = −25°C  
A
V
CE  
= 10 V  
I /I = 10  
C
B
25°C  
T = 75°C  
A
75°C  
0.1  
−25°C  
25°C  
100  
0.01  
10  
0.001  
1
10  
100  
0
20  
60  
80  
40  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. VCE(sat) vs. IC  
Figure 8. DC Current Gain  
4
3
2
1
0
100  
10  
1
75°C  
25°C  
f = 1 MHz  
= 0 A  
T = 25°C  
A
T = −25°C  
A
l
E
0.1  
0.01  
V
O
= 5 V  
0.001  
0
10  
20  
30  
40  
50  
0
2
4
6
8
10  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
V , INPUT VOLTAGE (VOLTS)  
in  
Figure 9. Output Capacitance  
Figure 10. Output Current vs. Input Voltage  
100  
V
O
= 0.2 V  
T = −25°C  
A
10  
1
25°C  
75°C  
0.1  
0
10  
20  
30  
40  
50  
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Input Voltage vs. Output Current  
http://onsemi.com  
5
MMUN2211LT1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS  
MMUN2213LT1  
10  
1
1000  
I /I = 10  
T = −25°C  
V
CE  
= 10 V  
C
B
A
T = 75°C  
A
75°C  
25°C  
25°C  
−25°C  
100  
0.1  
0.01  
10  
0
20  
40  
60  
80  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 12. VCE(sat) vs. IC  
Figure 13. DC Current Gain  
1
100  
10  
1
25°C  
75°C  
f = 1 MHz  
= 0 A  
T = 25°C  
A
l
E
0.8  
T = −25°C  
A
0.6  
0.4  
0.1  
0.01  
0.2  
0
V
O
= 5 V  
0.001  
0
10  
20  
30  
40  
50  
0
2
4
6
8
10  
V , INPUT VOLTAGE (VOLTS)  
in  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
Figure 14. Output Capacitance  
Figure 15. Output Current vs. Input Voltage  
100  
V
O
= 0.2 V  
T = −25°C  
A
25°C  
75°C  
10  
1
0.1  
0
10  
20  
30  
40  
50  
I , COLLECTOR CURRENT (mA)  
C
Figure 16. Input Voltage vs. Output Current  
http://onsemi.com  
6
MMUN2211LT1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS  
MMUN2214LT1  
1
0.1  
300  
V
CE  
= 10  
T = 75°C  
I /I = 10  
A
C
B
T = −25°C  
A
250  
200  
150  
100  
25°C  
25°C  
75°C  
−25°C  
0.01  
50  
0
0.001  
0
20  
40  
60  
80  
1
2
4
6
8 10 15 20 40 50 60 70 80 90 100  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 17. VCE(sat) vs. IC  
Figure 18. DC Current Gain  
100  
10  
1
4
3.5  
3
75°C  
25°C  
f = 1 MHz  
= 0 A  
T = 25°C  
A
l
E
2.5  
T = −25°C  
A
2
1.5  
1
0.5  
0
V
O
= 5 V  
20  
25 30 35 40 45 50  
0
2
4
6
8
10  
0
2
4
6
8
10 15  
V , INPUT VOLTAGE (VOLTS)  
in  
V , REVERSE BIAS VOLTAGE (VOLTS)  
R
Figure 20. Output Current vs. Input Voltage  
Figure 19. Output Capacitance  
10  
T = −25°C  
A
V
O
= 0.2 V  
25°C  
75°C  
1
0.1  
0
10  
20  
30  
40  
50  
I , COLLECTOR CURRENT (mA)  
C
Figure 21. Input Voltage vs. Output Current  
http://onsemi.com  
7
MMUN2211LT1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS  
MMUN2232LT1  
1
0.1  
1000  
V
= 10 V  
I /I =10  
CE  
C
B
T = 75°C  
A
T = 75°C  
A
100  
25°C  
−25°C  
25°C  
−25°C  
0.01  
10  
1
0.001  
4
8
12  
16  
20  
24  
28  
0
25  
50  
75  
100  
125  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 22. VCE(sat) vs. IC  
Figure 23. DC Current Gain  
6
5
4
100  
10  
V
O
= 5 V  
75°C  
f = 1 MHz  
E
T = 25°C  
A
25°C  
I
= 0 A  
1
3
2
T = −25°C  
A
0.1  
0.01  
1
0
0
10  
20  
30  
40  
50  
60  
0
2
4
6
8
V
R,  
REVERSE BIAS VOLTAGE (VOLTS)  
V
in,  
INPUT VOLTAGE (VOLTS)  
Figure 24. Output Capacitance  
Figure 25. Output Current vs. Input Voltage  
10  
V
O
= 0.2 V  
T = −25°C  
A
75°C  
1
25°C  
0.1  
0
10  
20  
30  
I
C,  
COLLECTOR CURRENT (mA)  
Figure 26. Output Voltage vs. Input Current  
http://onsemi.com  
8
MMUN2211LT1 Series  
TYPICAL ELECTRICAL CHARACTERISTICS  
MMUN2233LT1  
1
0.1  
1000  
I /I = 10  
C
B
75°C  
25°C  
100  
75°C  
T = −25°C  
A
25°C  
T = −25°C  
A
0.01  
10  
1
V
CE  
= 10 V  
0.001  
1
10  
100  
2
7
12  
17  
22  
27  
32  
60  
12  
I , COLLECTOR CURRENT (mA)  
I , COLLECTOR CURRENT (mA)  
C
C
Figure 28. DC Current Gain  
Figure 27. VCE(sat) vs. IC  
4
100  
10  
75°C  
f = 1 MHz  
= 0 A  
T = 25°C  
A
3.5  
3
I
T = −25°C  
A
E
2.5  
2
1
1.5  
1
0.1  
0.01  
25°C  
0.5  
0
V
O
= 5 V  
0
10  
V
20  
30  
40  
50  
0
2
4
6
8
REVERSE BIAS VOLTAGE (VOLTS)  
V
INPUT VOLTAGE (VOLTS)  
R,  
in,  
Figure 29. Output Capacitance  
Figure 30. Output Current vs. Input Voltage  
10  
V
O
= 0.2 V  
T = −25°C  
A
25°C  
75°C  
1
0.1  
0
6
18  
24  
30  
I
C,  
COLLECTOR CURRENT (mA)  
Figure 31. Input Voltage vs. Output Current  
http://onsemi.com  
9
MMUN2211LT1 Series  
TYPICAL APPLICATIONS FOR NPN BRTs  
+12 V  
ISOLATED  
LOAD  
FROM µP OR  
OTHER LOGIC  
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic  
+12 V  
V
CC  
OUT  
IN  
LOAD  
Figure 33. Open Collector Inverter: Inverts  
the Input Signal  
Figure 34. Inexpensive, Unregulated Current Source  
http://onsemi.com  
10  
MMUN2211LT1 Series  
PACKAGE DIMENSIONS  
SOT−23  
TO−236AB  
CASE 318−08  
ISSUE AI  
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
A
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES  
LEAD FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS  
OF BASE MATERIAL.  
L
3
4. 318−03 AND −07 OBSOLETE, NEW  
STANDARD 318−08.  
S
B
1
2
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MIN  
0.1102  
0.0472 0.0551  
0.0350 0.0440  
0.0150 0.0200  
0.0701 0.0807  
0.0005 0.0040 0.013  
0.0034 0.0070 0.085  
0.0140 0.0285  
0.0350 0.0401  
0.0830 0.1039  
0.0177 0.0236  
MAX  
0.1197  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
MAX  
3.04  
1.40  
1.11  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
V
G
C
K
L
S
0.35  
0.89  
2.10  
0.45  
H
J
D
V
K
STYLE 6:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
11  
MMUN2211LT1 Series  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MMUN2211LT1/D  

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