MMJT9410T1 [ONSEMI]
NPN 双极功率晶体管;
| 型号： | MMJT9410T1 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极功率晶体管 晶体管 |
| 文件： | 总7页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMJT9410
Bipolar Power Transistors
NPN Silicon
Features
• SOT−223 Surface Mount Packaging
http://onsemi.com
• Epoxy Meets UL 94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Symbol Value
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
30
45
CEO
V
CE(sat) = 0.2 VOLTS
V
CB
EB
Emitter−Base Voltage
V
6.0
1.0
3.0
5.0
Base Current − Continuous
Collector Current − Continuous
Collector Current − Peak
I
B
4
C 2,4
I
C
C
I
CM
Total Power Dissipation @ T = 25°C
P
D
3.0
24
W
mW/°C
W
C
Derate above 25°C
B
1
C
2
E
3
Total P @ T = 25°C mounted on 1” sq.
1.7
D
A
(645 sq. mm) Collector pad on FR−4
B 1
E 3
Top View
Pinout
bd material
Schematic
Total P @ T = 25°C mounted on 0.012” sq.
0.75
D
A
(7.6 sq. mm) Collector pad on FR−4 bd material
Operating and Storage Junction
Temperature Range
T
T
−55 to
°C
J, stg
+150
MARKING
DIAGRAM
4
ESD − Human Body Model
ESD − Machine Model
HBM
MM
3B
C
V
V
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
AYW
9410G
G
SOT−223
CASE 318E
STYLE 1
1
THERMAL CHARACTERISTICS
A
Y
W
= Assembly Location
= Year
= Work Week
Characteristic
Symbol
Max
42
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Case
R
q
JC
Thermal Resistance, Junction−to−Ambient on
1” sq. (645 sq. mm) Collector pad on FR−4 bd
material
R
75
9410 = Device Code
q
JA
G
= Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction−to−Ambient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR−4 bd material
R
165
260
°C/W
°C
q
JA
ORDERING INFORMATION
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
T
L
†
Device
Package
Shipping
MMJT9410G
SOT−223
(Pb−Free)
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 7
MMJT9410/D
MMJT9410
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Sustaining Voltage
V
Vdc
Vdc
CEO(sus)
30
−
−
−
−
(I = 10 mAdc, I = 0 Adc)
C
B
Emitter−Base Voltage
(I = 50 mAdc, I = 0 Adc)
V
EBO
6.0
E
C
Collector Cutoff Current
(V = 25 Vdc, R = 200 W)
I
mAdc
CER
−
−
−
−
20
200
CE
BE
(V = 25 Vdc, R = 200 W, T = 125°C)
CE
BE
J
Emitter Cutoff Current
(V = 5.0 Vdc)
BE
I
mAdc
EBO
−
−
10
ON CHARACTERISTICS (Note 1)
Collector−Emitter Saturation Voltage
(I = 0.8 Adc, I = 20 mAdc)
V
V
Vdc
CE(sat)
−
−
−
0.105
0.150
−
0.150
0.200
0.450
C
B
(I = 1.2 Adc, I = 20 mAdc)
C
B
(I = 3.0 Adc, I = 0.3 Adc)
C
B
Base−Emitter Saturation Voltage
(I = 3.0 Adc, I = 0.3 Adc)
Vdc
Vdc
−
BE(sat)
−
−
−
−
1.25
1.10
C
B
Base−Emitter On Voltage
V
BE(on)
(I = 1.2 Adc, V = 4.0 Vdc)
C
CE
DC Current Gain
h
FE
85
80
60
200
−
−
−
−
−
(I = 0.8 Adc, V = 1.0 Vdc)
C
CE
(I = 1.2 Adc, V = 1.0 Vdc)
C
CE
(I = 3.0 Adc, V = 1.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Output Capacitance
C
pF
pF
ob
−
−
−
85
200
72
135
−
(V = 10 Vdc, I = 0 Adc, f = 1.0 MHz)
CB
E
Input Capacitance
(V = 8.0 Vdc)
EB
C
ib
Current−Gain − Bandwidth Product (Note 2)
(I = 500 mA, V = 10 Vdc, F = 1.0 MHz)
f
T
MHz
−
C
CE
test
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. f = |h | • f
T
FE
test
0.25
0.20
0.15
0.10
1.0
0.75
0.50
1.2 A
I
C
= 3.0 A
1.2 A
0.8 A
0.5 A
0.8 A
0.25
0
0.05
0
0.5 A
I
C
= 0.25 A
10
0.25 A
1.0
10
100
1000
1.0
100
1000
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
http://onsemi.com
2
MMJT9410
1000
1000
150°C
150°C
25°C
25°C
100
100
-ꢀ55°C
-ꢀ55°C
V
CE
= 1.0 V
V
CE
= 4.0 V
10
10
0.1
1.0
10
0.1
1.0
I , COLLECTOR CURRENT (A)
10
I , COLLECTOR CURRENT (A)
C
C
Figure 3. DC Current Gain
Figure 4. DC Current Gain
1.0
10
I /I = 10
C B
V
BE(sat)
1.0
V
BE(sat)
0.1
V
CE(sat)
0.1
V
CE(sat)
I /I = 50
C B
0.01
0.01
0.1
1.0
10
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. “On” Voltages
Figure 6. “On” Voltages
1.2
0.8
1000
100
10
-ꢀ55°C
25°C
C
ob
150°C
0.4
V
CE
= 4.0 V
0
1.0
0.1
1.0
10
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. VBE(on) Voltage
Figure 8. Capacitance
http://onsemi.com
3
MMJT9410
10
100
0.5 ms
100 ms
5.0 ms
1.0
0.1
V
= 10 V
= 1.0 MHz
CE
0.01
f
test
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
T = 25°C
A
0.001
10
0.1
1.0
10
100
0.1
1.0
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (AMP)
C
Figure 9. Current−Gain Bandwidth Product
Figure 10. Active Region Safe Operating Area
4.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I − V
C
CE
3.0
2.0
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
C
The data of Figure 10 is based on T
= 150°C; T is
J(pk)
C
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
1.0
0
v 150°C. T
may be calculated from the data in
J(pk)
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
T
A
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 11. Power Derating
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
(pk)
0.01
R
(t) = r(t) q
JA
q
JA
q
= 165°C/W
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
SINGLE PULSE
t
1
0.001
t
2
1
T
- T = P q (t)
A (pk) JA
J(pk)
DUTY CYCLE, D = t /t
1
2
0.0001
0.0001
0.001
0.01
0.1
t, TIME (seconds)
1.0
10
100
1000
Figure 12. Thermal Response
http://onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
DATE 02 OCT 2018
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. ANODE
STYLE 3:
STYLE 4:
PIN 1. SOURCE
STYLE 5:
PIN 1. DRAIN
PIN 1. GATE
2. DRAIN
2. CATHODE
3. NC
2. DRAIN
3. GATE
4. DRAIN
2. GATE
3. SOURCE
4. DRAIN
3. SOURCE
4. GATE
4. CATHODE
STYLE 6:
PIN 1. RETURN
STYLE 7:
STYLE 8:
STYLE 9:
STYLE 10:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
CANCELLED
PIN 1. INPUT
2. GROUND
3. LOGIC
PIN 1. CATHODE
2. ANODE
2. INPUT
3. OUTPUT
4. INPUT
3. GATE
4. CATHODE
4. GROUND
4. ANODE
STYLE 11:
PIN 1. MT 1
STYLE 12:
STYLE 13:
PIN 1. INPUT
2. OUTPUT
3. NC
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2. MT 2
3. GATE
4. MT 2
4. OUTPUT
GENERIC
MARKING DIAGRAM*
AYW
XXXXXG
G
1
A
Y
= Assembly Location
= Year
W
= Work Week
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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