MMFT2406T3 [ONSEMI]
Power MOSFET; 功率MOSFET
| 型号： | MMFT2406T3 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMFT2406T1
Power MOSFET
700 mA, 240 V, N−Channel, SOT−223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, converters,
solenoid and relay drivers. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
http://onsemi.com
700 mA, 240 V
• Silicon Gate for Fast Switching Speeds
• High Voltage − 240 Vdc
• Low Drive Requirement
RDS(on) = 6.0 W
N−Channel
D
• The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die.
G
• Pb−Free Packages are Available
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Symbol Value
Unit
Vdc
MARKING
DIAGRAM
V
V
240
±20
700
DS
GS
Vdc
4
I
mAdc
TO−223
CASE 318E
STYLE 3
D
T2406
AWW
Total Power Dissipation @ T = 25°C (Note 1)
P
D
1.5
12
W
mW/°C
1
A
2
Derate above 25°C
3
Operating and Storage Temperature Range
T , T
−65 to
150
°C
J
stg
A
WW
= Assembly Location
= Work Week
THERMAL CHARACTERISTICS
Rating
Symbol Value
Unit
PIN ASSIGNMENT
Thermal Resistance − Junction−to−Ambient
(surface mounted) (Note 1)
R
83.3
°C/W
4
Drain
q
JA
Lead Temperature for Soldering Purposes,
1/16″ from case
Time in Solder Bath
T
L
260
10
°C
Sec
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1
2
3
Gate Drain Source
1. Device mounted on a glass epoxy printed circuit board 1.575 in x 1.575 in
x 0.059 in; mounting pad for the collector lead min. 0.93 sq in.
ORDERING INFORMATION
†
Device
Package
Shipping
MMFT2406T1
SOT−223 1000 Tape & Reel
MMFT2406T1G
SOT−223 1000 Tape & Reel
(Pb−Free)
MMFT2406T3
SOT−223 4000 Tape & Reel
MMFT2406T3G
SOT−223 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
June, 2004 − Rev. 3
MMFT2406T1/D
MMFT2406T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Drain−to−Source Breakdown Voltage
V
240
−
−
Vdc
mAdc
nAdc
(BR)DSS
(V = 0, I = 100 mA)
GS
D
Zero Gate Voltage Drain Current
(V = 120 V, V = 0)
I
10
DSS
DS
GS
Gate−Body Leakage Current
(V = 15 Vdc, V = 0)
I
−
100
GSS
GS
DS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
0.8
2.0
Vdc
(V = V , I = 1.0 mAdc)
DS
GS
D
Static Drain−to−Source On−Resistance
(V = 2.5 Vdc, I = 0.1 Adc)
R
W
DS(on)
−
−
10
6.0
GS
D
(V = 10 Vdc, I = 0.5 Adc)
GS
D
Drain−to−Source On−Voltage
(V = 10 V, I = 0.5 A)
V
−
3.0
−
Vdc
DS(on)
GS
D
Forward Transconductance
(V = 6.0 V, I = 0.5 A)
g
FS
300
mmhos
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
125
50
pF
iss
(V = 25 V, V = 0,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
20
rss
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
MMFT2406T1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE K
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
DIM MIN MAX
MILLIMETERS
S
B
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
D
G
H
J
L
0.0008 0.0040 0.020
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
0.24
1.50
0.85
0
J
K
L
C
M
S
_
_
_
_
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
ǒ
Ǔ
1.5
0.059
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
3
MMFT2406T1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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local Sales Representative.
MMFT2406T1/D
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