MMDFS3P303 [ONSEMI]
Power MOSFET 3 Amps, 30 Volts; 功率MOSFET 3安培， 30伏
| 型号： | MMDFS3P303 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 3 Amps, 30 Volts |
| 文件： | 总12页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMDFS3P303
Power MOSFET
3 Amps, 30 Volts
P–Channel SO–8, FETKYt
The FETKY product family incorporates low R
, MOSFETs
DS(on)
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packaged with industry leading, low forward drop, low leakage
Schottky Barrier rectifiers to offer high efficiency components in a
space saving configuration. Independent pinouts for MOSFET and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications
such as Buck Converter, Buck–Boost, Synchronous Rectification,
Low Voltage Motor Control, and Load Management in Battery Packs,
Chargers, Cell Phones and other Portable Products.
3 AMPERES
30 VOLTS
R
= 100 mW
DS(on)
V = 0.42 Volts
F
P–Channel
• Power MOSFET with Low V , Low I Schottky Rectifier
F
R
• Lower Component Placement and Inventory Costs along with
Board Space Savings
D
• R2 Suffix for Tape and Reel (2500 units/13″ reel)
• Mounting Information for SO–8 Package Provided
G
• I
Specified at Elevated Temperature
DSS
• Applications Information Provided
• Marking: 3P303
S
MARKING
DIAGRAM
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
(Notes 1. & 2.)
J
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (R
Symbol
Value
30
Unit
Vdc
Vdc
Vdc
SO–8
CASE 751
STYLE 18
6N303
LYWW
V
DSS
8
= 1.0 MW)
V
DGR
30
GS
1
Gate–to–Source Voltage – Continuous
V
GS
"20
Drain Current
– Continuous @ T = 25°C
– Continuous @ T = 100°C
– Single Pulse (tp v 10 ms)
L
Y
WW
= Location Code
= Year
= Work Week
I
I
3.5
2.25
12
Adc
A
A
D
D
I
Apk
DM
Total Power Dissipation @ T = 25°C
(Note 3.)
P
D
2.0
Watts
A
PIN ASSIGNMENT
Single Pulse Drain–to–Source Avalanche
E
375
mJ
Anode
Anode
Source
Cathode
Cathode
Drain
AS
1
2
3
4
8
7
6
5
Energy – STARTING T = 25°C
J
V
= 30 Vdc, V
= 10 Vdc, V
= 20 Vdc,
= 9.0 Apk, L = 10 mH, R = 25 W
DD
L
GS
DS
I
G
Gate
Drain
1. Negative sign for P–channel device omitted for clarity.
2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2.0%.
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
Top View
10 sec. max.
ORDERING INFORMATION
Device
MMDFS3P303R2
Package
Shipping
2500 Tape & Reel
SO–8
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
November, 2000 – Rev. 2
MMDFS3P303/D
MMDFS3P303
SCHOTTKY RECTIFIER MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V
30
3.0
6.0
30
Volts
Amps
Amps
Amps
RRM
R
V
Average Forward Current (Note 3.)
I
O
(Rated V ) T = 100°C
R
A
Peak Repetitive Forward Current (Note 3.)
I
frm
(Rated V , Square Wave, 20 kHz) T = 105°C
R
A
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
I
fsm
THERMAL CHARACTERISTICS – SCHOTTKY AND MOSFET
Thermal Resistance – Junction–to–Ambient (Note 4.) – MOSFET
Thermal Resistance – Junction–to–Ambient (Note 5.) – MOSFET
Thermal Resistance – Junction–to–Ambient (Note 3.) – MOSFET
Thermal Resistance – Junction–to–Ambient (Note 4.) – Schottky
Thermal Resistance – Junction–to–Ambient (Note 5.) – Schottky
Thermal Resistance – Junction–to–Ambient (Note 3.) – Schottky
Operating and Storage Temperature Range
R
R
R
R
R
R
201
105
°C/W
qJA
qJA
qJA
qJA
qJA
qJA
62.5
197
97
62.5
T , T
j stg
–55 to 150
°C
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 1. & 6.)
J
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Voltage
(V
GS
= 0 Vdc, I = 0.25 mA)
Temperature Coefficient (Positive)
V
30
–
–
27
–
–
Vdc
mV/°C
D
(BR)DSS
Zero Gate Drain Current
(V
DS
(V
DS
= 30 Vdc, V
= 30 Vdc, V
= 0 Vdc)
= 0 Vdc, T = 125°C)
I
–
–
–
–
1.0
10
µAdc
GS
GS
DSS
J
Gate Body Leakage Current
(V
= ± 20 Vdc, V
DS
= 0)
I
–
–
100
nAdc
GS
GSS
ON CHARACTERISTICS (Note 6.)
Gate Threshold Voltage (V
= V , I = 0.25 mA)
GS
V
1.0
–
1.7
3.5
–
–
Vdc
mV/°C
DS
D
GS(th)
Temperature Coefficient (Negative)
Static Drain–Source Resistance (V
(V
= 10 Vdc, I = 3.5 Adc)
R
–
–
0.085
0.130
0.100
0.160
W
GS
GS
D
DS(on)
= 4.5 Vdc, I = 2.0 Adc)
D
Forward Transconductance (V
DS
= 15 Vdc, I = 3.5 Adc)
g
FS
–
5.0
–
mhos
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
–
–
–
405
200
55
–
–
–
pF
ns
iss
(V
DS
= 25 Vdc, V
= 0 Vdc,
GS
f = 1.0 MHz)
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Note 7.)
Turn–On Delay Time
t
–
–
–
–
12.5
16
25
30
90
65
d(on)
(V
DD
= 20 Vdc, I = 2.0 Adc,
D
Rise Time
t
r
V
R
= 10 Vdc,
= 6.0 Ω)
GS
G
Turn–Off Delay Time
Fall Time
t
50
d(off)
t
35
f
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
7. Switching characteristics are independent of operating junction temperature.
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2
MMDFS3P303
MOSFET ELECTRICAL CHARACTERISTICS – continued (T = 25°C unless otherwise noted) (Notes 1. & 6.)
J
Characteristics
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS – continued (Note 7.)
Turn–On Delay Time
t
–
–
–
–
–
–
–
–
19
36
–
–
ns
d(on)
(V
(V
= 20 Vdc, I = 2.0 Adc,
D
Rise Time
DD
t
r
V
= 4.5 Vdc,
GS
G
Turn–Off Delay Time
Fall Time
t
27
–
d(off)
R
= 6.0 Ω)
t
f
31
–
Gate Charge
Q
T
Q
1
Q
2
Q
3
14
25
–
nC
1.8
4.5
2.85
= 20 Vdc, I = 3.5 Adc,
DS
D
V
GS
= 10 Vdc)
–
–
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On–Voltage (Note 6.)
Reverse Recovery Time
(I = 1.7 Adc, V
= 0 Vdc)
V
SD
–
–
–
–
–
0.9
26.6
18.8
7.8
1.2
–
V
S
GS
t
rr
ns
t
a
–
(V
GS
= 0 V, I = 3.5 A,
S
t
b
–
dIS/dt = 100 A/µs)
Reverse Recovery Stored
Charge
Q
0.03
–
µC
RR
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
V
T
= 25°C
T
T
= 125°C
Volts
Maximum Instantaneous Forward Voltage (Note 6.)
F
J
J
I
F
I
F
I
F
= 100 mAdc
= 3.0 Adc
= 6.0 Adc
0.28
0.42
0.50
0.13
0.33
0.45
I
R
T
J
= 25°C
250
–
= 125°C
mA
Maximum Instantaneous Reverse Current (Note 6.)
V
J
= 30 V
= 30 V
R
–
25
mA
Maximum Voltage Rate of Change
V
dV/dt
10,000
V/ms
R
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
7. Switching characteristics are independent of operating junction temperature.
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MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
6.0
5.0
4.0
3.0
2.0
6.0
10 V
6.0 V
5.0 V
4.5 V
T = 25°C
V
DS
≥ 10 V
J
4.0 V
5.0
4.0
3.0
2.0
3.7 V
3.5 V
3.3 V
25°C
3.0 V
1.0
0
1.0
0
100°C
V
GS
= 2.7 V
T = -55°C
J
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.18
0.16
0.14
0.12
0.10
0.08
T = 25°C
J
T = 25°C
J
I
D
= 3.5 A
V
GS
= 4.5 V
10 V
0.1
0
0.06
0.04
2.0
4.0
6.0
8.0
10
1.0 1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V , GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
I , DRAIN CURRENT (AMPS)
D
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
1000
100
V
GS
= 0 V
V
I
= 10 V
GS
= 1.5 A
T = 125°C
J
D
100°C
10
0.6
0.4
1.0
-50
-25
0
25
50
75
100
125
150
0
5.0
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
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MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1200
1000
800
12
25
20
15
10
V
DS
= 0
V = 0
GS
Q
T
C
C
iss
T = 25°C
10
8.0
6.0
4.0
J
V
GS
rss
Q1
Q2
600
C
C
iss
I
D
= 3.5 A
400
oss
5.0
0
200
0
T = 25°C
J
Q3
2.0
0
C
rss
25
V
DS
-10 -ā5.0
0
5.0
10
15
20
30
0
2.0
4.0
6.0
8.0
10
12
14
Q , TOTAL GATE CHARGE (nC)
G
V
GS
V
DS
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
100
2.5
2.0
1.5
1.0
V
= 10 V
GS
T = 25°C
V
= 0 V
GS
T = 25°C
J
I
D
= 2.0 A
J
V
DD
= 15 V
t
d(off)
t
f
t
r
t
10
d(on)
0.5
0
1.0
1.0
10
R , GATE RESISTANCE (OHMS)
100
0
0.2
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
0.4
0.6
0.8
1.0
V
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
450
400
350
300
250
200
150
100
100
10
V
= 12 V
GS
SINGLE PULSE
I
D
= 3.5 A
1.0 ms
T = 25°C
A
10 ms
1.0
dc
0.1
R LIMIT
THERMAL LIMIT
DS(on)
50
0
PACKAGE LIMIT
0.01
0.1
1.0
10
100
25
50
75
100
125
150
V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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5
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1.0
D = 0.5
0.2
0.1
NORMALIZED TO R
qJA
AT STEADY STATE (1″ PAD)
0.1
0.05
2.32 W
0.0014 F 0.0073 F 0.022 F 0.105 F 0.484 F 3.68 F
AMBIENT
18.5 W
50.9 W
37.1 W
56.8 W
24.4 W
CHIP
JUNCTION
0.02
0.01
SINGLE PULSE
1E-02
0.01
1E-03
1E-01
1E+00
t, TIME (s)
1E+01
1E+02
1E+03
Figure 13. FET Thermal Response
di/dt
I
S
t
rr
t
a
t
b
TIME
0.25 I
t
p
S
I
S
Figure 14. Diode Reverse Recovery Waveform
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10
10
85°C
25°C
85°C
T = 125°C
J
-ā40°C
T = 125°C
J
25°C
1.0
1.0
0.1
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
Figure 15. Typical Forward Voltage
Figure 16. Maximum Forward Voltage
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MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
0.1
0.1
T = 125°C
J
T = 125°C
J
0.01
0.001
0.01
0.001
85°C
25°C
0.0001
0.0001
25°C
0.00001
0.00001
0.000001
0.000001
0
5.0
10
15
20
25
30
0
5.0
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 17. Typical Reverse Current
Figure 18. Maximum Reverse Current
1000
100
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
dc
FREQ = 20 kHz
SQUARE WAVE
I
/I = p
pk o
I
/I = 5.0
/I = 10
pk o
I
I
pk o
/I = 20
pk o
0.5
0
0
5.0
10
15
20
25
30
0
20
40
60
80
100
120
140
160
V , REVERSE VOLTAGE (VOLTS)
R
T , AMBIENT TEMPERATURE (°C)
A
Figure 19. Typical Capacitance
Figure 20. Current Derating
1.75
1.50
1.25
1.00
dc
SQUARE
WAVE
I /I = p
pk o
I /I = 5.0
pk o
I /I = 10
pk o
0.75
0.50
I /I = 20
pk o
0.25
0
0
1.0
2.0
3.0
4.0
5.0
I , AVERAGE FORWARD CURRENT (AMPS)
O
Figure 21. Forward Power Dissipation
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MMDFS3P303
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
1.0
0.1
D = 0.5
0.2
0.1
NORMALIZED TO R
qJA
AT STEADY STATE (1″ PAD)
0.05
0.02
0.01
0.1010 W 1.2674 W 27.987 W 30.936 W 36.930 W
39.422 mF 493.26 mF 0.0131 F 0.2292 F 2.267 F
AMBIENT
CHIP
JUNCTION
0.01
SINGLE PULSE
0.001
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t, TIME (s)
Figure 22. Schottky Thermal Response
TYPICAL APPLICATIONS
STEP DOWN SWITCHING REGULATORS
L
O
+
+
V
in
C
O
V
out
LOAD
-
-
Buck Regulator
L
O
+
+
V
in
C
O
V
out
LOAD
-
-
Synchronous Buck Regulator
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MMDFS3P303
TYPICAL APPLICATIONS
STEP UP SWITCHING REGULATORS
L1
+
+
V
in
C
O
V
out
LOAD
Q1
-
-
Boost Regulator
+
+
V
in
C
O
V
out
LOAD
-
-
Buck–Boost Regulator
MULTIPLE BATTERY CHARGERS
Buck Regulator/Charger
Q1
Q2
D2
L
O
BATT #1
+
D1
V
in
C
O
-
Q3
D3
BATT #2
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MMDFS3P303
TYPICAL APPLICATIONS
Li–lon BATTERY PACK APPLICATIONS
Battery Pack
PACK +
Li-Ion
BATTERY
CELLS
SMART IC
DISCHARGE
CHARGE
Q1
Q2
PACK -
SCHOTTKY
SCHOTTKY
•
•
•
•
Applicable in battery packs which require a high current level.
During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge.
During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation.
Under normal operation, both transistors are on.
SO–8 FOOTPRINT
0.060
1.52
0.275
7.0
0.155
4.0
0.024
0.6
0.050
1.270
inches
mm
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MMDFS3P303
PACKAGE DIMENSIONS
SO–8
CASE 751–07
ISSUE V
–X–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
8
5
4
S
M
M
B
0.25 (0.010)
Y
1
K
–Y–
G
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.197
0.157
0.069
0.020
A
B
C
D
G
H
J
4.80
3.80
1.35
0.33
5.00 0.189
4.00 0.150
1.75 0.053
0.51 0.013
C
N X 45
_
SEATING
PLANE
–Z–
1.27 BSC
0.050 BSC
0.10 (0.004)
0.10
0.19
0.40
0
0.25 0.004
0.25 0.007
1.27 0.016
0.010
0.010
0.050
8
0.020
0.244
M
J
H
D
K
M
N
S
8
0
_
_
_
_
0.25
5.80
0.50 0.010
6.20 0.228
M
S
S
X
0.25 (0.010)
Z
Y
STYLE 18:
PIN 1. ANODE
2. ANODE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
XXXXXX
ALYW
7. CATHODE
8. CATHODE
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11
MMDFS3P303
FETKY is a trademark of International Rectifier Corporation.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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MMDFS3P303/D
相关型号：
MMDFS6N303
Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
MOTOROLA
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