MMBFJ110 [ONSEMI]
N 沟道开关;
ONSEMI 
N-Channel JFET
MMBFJ110
Features
• This Device is Designed for Digital Switching Applications where
Very Low On Resistance is Mandatory
• Sourced from Process 58
www.onsemi.com
• This is a Pb−Free Device
3
MAXIMUM RATINGS (T = 25°C unless otherwise specified) (Notes 1, 2)
A
Symbol
Parameter
Drain−Gate Voltage
Value
25
Unit
V
1
2
V
V
DG
GS
GF
SOT−23/SUPERSOTt−23,
Gate−Source Voltage
Forward Gate Current
Junction Temperature
Storage Temperature Range
−25
V
3 LEAD, 1.4x2.9
CASE 527AG
I
10
mA
°C
°C
1. Drain, 2. Source, 3. Gate
T
J
150
T , T
−55 to 150
J
STG
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed or low−duty−cycle operations.
&Y
110 &G
110 = Specific Device Code
&Y = Year Coding
&G = Weekly Date Code
THERMAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
(Note 3)
Symbol
Parameter
Total Device Dissipation
Max
460
3.68
270
Unit
mW
P
D
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
Derate Above 25°C
mW/°C
°C/W
R
Thermal Resistance, Junction−to−Ambient
q
JA
3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for
2
the collector lead minimum 6 cm .
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
December, 2020 − Rev. 2
MMBFJ110/D
MMBFJ110
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Max
Unit
OFF CHARACTERISTICS
V
Gate−Source Breakdown Voltage
I
= −10 mA, V = 0
−25
−
−
V
(BR)GSS
G
DS
I
Gate Reverse Current
V
V
V
= −15 V, V = 0
−3.0
−200
−4.0
nA
GSS
GS
GS
DS
DS
= −15 V, V = 0, T = 100°C
−
DS
A
V
(off)
Gate−Source Cut−Off Voltage
= 15 V, I = 10 nA
−0.5
V
GS
D
ON CHARACTERISTICS
I
Zero−Gate Voltage Drain Current (Note 4)
Drain−Source On Resistance
V
V
= 15 V, V = 0
10
−
mA
DSS
DS
GS
r
(on)
≤ 0.1 V, V = 0
−
18
W
DS
DS
GS
SMALL SIGNAL CHARACTERISTICS
C
C
(on)
(on)
Drain−Gate & Source−Gate On Capacitance
V
V
= 0, V = 0, f = 1.0 MHz
−
−
85
15
pF
pF
dg
sg
DS
GS
C
dg
C
sg
(off)
(off)
Drain−Gate & Source−Gate Off Capacitance
= 0, V = −10 V, f = 1.0 MHz
GS
DS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
TYPICAL PERFORMANCE CHARACTERISTICS
250
T
A
= 25°C
TYP VGS(off) = −2.9 V
200
150
100
50
V
= −0.1 V
−0.5 V
GS
−1.0 V
−1.5 V
−2.0 V
3
0
0
1
2
4
5
6
7
8
9
10
11
12
13
14
15
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 1. Common Drain−Source
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2
MMBFJ110
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
10
1
V
V
V
= 0 PULSED
= 100 mA
V
I
= 100 mV
= 100 mA
GS
GS
DS
D
@ V = 15 V, I = 10 nA
GS(off)
DS
D
100
10
−1
−1
−4
100
25
−4
V
, GATE CUTOFF VOLTAGE (V)
V
, GATE CUTOFF VOLTAGE (V)
GS(off)
GS(off)
Figure 2. Drain ON Resistance
Figure 3. Drain Current vs.
Gate−Source Cut−Off Voltage
100
50
10
8
V
= 10 V
T = 25°C
A
DG
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
V
V
= 1.5 V
= −12 V
DD
= 0.21 @ f ≥ 1.0 kHz
GS
6
I
D
= 30 mA
10
5
4
I
D
= 10 mA
I
D
= 1.0 mA
I
= 10 mA
D
2
1
0
0.01
0.03
0.1
0.5
1
2
10
0
−2
−4
−6
−8
−10
f, FREQUENCY (Hz)
V
GS(off)
, GATE CUTOFF VOLTAGE (V)
Figure 4. Noise Voltage vs. Frequency
Figure 5. Switching Turn−On Time vs.
Gate−Source Cut−Off Voltage
100
50
40
30
20
10
0
VGS = 0 V
T
A
= 125°C
25°C
VGS(off) = −2.9 V
10
V
= −3.5 V
GS(off)
−55°C
VGS(off) = −4.0 V
T
= 25°C
= 1.5 V
= −12 V
A
V
V
DD
GS
1
1
10
100
0
5
10
15
20
I , DRAIN CURRENT (mA)
D
I , DRAIN CURRENT (mA)
D
Figure 6. Switching Turn−On Time vs. Drain Current
Figure 7. On Resistance vs. Drain Current
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3
MMBFJ110
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1000
100
10
100
T
= 25°C
T
= 25°C
A
A
f = 1.0 kHz
V
V
f = 1.0 kHz
VGS(off) = −4.0 V
= 10 V
GS
GS(off)
= −3.0 V @ V = 15 V, I = 10 nA
DS
D
10
1
0,1
1
0,1
1
10
0,1
1
10
I , DRAIN CURRENT (mA)
D
I , DRAIN CURRENT (mA)
D
Figure 8. Output Conductance vs. Drain Current
Figure 9. Output Conductance vs. Drain Current
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
T, AMBIENT TEMPERATURE (°C)
Figure 10. Power Dissipation vs. Ambient Temperature
ORDERING INFORMATION
Part Number
†
Top Mark
Package
Shipping
MMBFJ108
110
SSOT 3L
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9
CASE 527AG
ISSUE A
DATE 09 DEC 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
XXX = Specific Device Code
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
M
= Month Code
XXXMG
G
= Pb−Free Package
G
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34319E
SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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rights of others.
© Semiconductor Components Industries, LLC, 2019
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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