MM74HC08MX [ONSEMI]

四路 2 输入 AND 门极;
MM74HC08MX
型号: MM74HC08MX
厂家: ONSEMI    ONSEMI
描述:

四路 2 输入 AND 门极

栅 光电二极管 逻辑集成电路 触发器
文件: 总9页 (文件大小:333K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
Quad 2-Input AND Gate  
MM74HC08  
14  
1
SOIC14 NB  
CASE 751A03  
General Description  
The MM74HC08 AND gates utilize advanced silicongate CMOS  
technology to achieve operating speeds similar to LSTTL gates with  
the low power consumption of standard CMOS integrated circuits.  
The HC08 has buffered outputs, providing high noise immunity  
and the ability to drive 10 LSTTL loads. The 74HC logic family  
is functionally as well as pinout compatible with the standard  
74LS logic family. All inputs are protected from damage due to static  
14  
1
SOIC14  
CASE 751EF  
discharge by internal diode clamps to V and ground.  
CC  
Features  
14  
Typical Propagation Delay: 12 ns (t ), 7 ns (t  
)
PHL  
PLH  
1
Fanout of 10 LSTTL Loads  
TSSOP14 WB  
CASE 948G01  
Quiescent Power Consumption: 2 mA Maximum at Room  
Temperature  
Low Input Current: 1 mA Maximum  
This Device is PbFree and Halide Free  
MARKING DIAGRAMS  
SOIC14  
Connection Diagram  
14  
V
B4  
13  
B3  
10  
A3  
9
A4  
12  
Y4  
11  
Y3  
8
HC08A  
AWLYWW  
CC  
14  
1
TSSOP14  
14  
HC  
08A  
ALYWG  
G
1
1
A1  
2
3
4
5
6
7
A2  
Top View  
B2  
Y2  
GND  
B1  
Y1  
HC08A  
A
WL, L  
Y
= Specific Device Code  
= Assembly Location  
= Wafer Lot Number  
= Year  
WW, YW = Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 4  
of this data sheet.  
© Semiconductor Components Industries, LLC, 1983  
1
Publication Order Number:  
December, 2022 Rev. 2  
MM74HC08/D  
MM74HC08  
ABSOLUTE MAXIMUM RATINGS (Note 1)  
Symbol  
Rating  
Min  
0.5  
0.5  
0.5  
Max  
Unit  
V
V
CC  
Supply Voltage  
+7.0  
V
IN  
DC Input Voltage  
V
V
+ 0.5  
V
CC  
CC  
V
OUT  
DC Output Voltage  
Clamp Diode Current  
DC Output Current, per pin  
+ 0.5  
20  
V
I , I  
IK OK  
mA  
mA  
mA  
°C  
I
25  
OUT  
I
DC V or GND Current, per pin  
50  
CC  
CC  
T
STG  
Storage Temperature Range  
Power Dissipation  
65  
+150  
P
D
SOIC Package only  
500  
260  
mW  
°C  
T
L
Lead Temperature (Soldering 10 second)  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Unless otherwise specified all voltages are referenced to ground.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2
Max  
Unit  
V
V
CC  
Supply Voltage  
6
V
IN  
, V  
DC Input or Output Voltage  
Operating Temperature Range  
Input Rise or Fall Times  
0
V
CC  
V
OUT  
T
A
55  
+125  
1000  
500  
°C  
ns  
ns  
ns  
t , t  
r
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 4.5 V  
= 6.0 V  
f
400  
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
www.onsemi.com  
2
 
MM74HC08  
DC ELECTRICAL CHARACTERISTICS (Note 2)  
T
= 40°C  
T = 55°C  
A
to 125°C  
A
to 85°C  
T
A
= 25°C  
Typ  
Guaranteed Limits  
Symbol  
Parameter  
V
CC  
(V)  
Conditions  
Unit  
V
Minimum HIGH Level  
Input Voltage  
2.0  
1.5  
1.5  
3.15  
4.2  
1.5  
3.15  
4.2  
0.5  
1.35  
1.8  
1.9  
4.4  
5.9  
3.7  
V
IH  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
4.5  
3.15  
4.2  
V
Maximum LOW Level  
Input Voltage  
0.5  
0.5  
V
V
IL  
1.35  
1.8  
1.35  
1.8  
V
OH  
Minimum HIGH Level  
Output Voltage  
V
OUT  
= V or V  
2.0  
4.5  
6.0  
4.2  
1.9  
1.9  
IN  
IH  
IL  
I  
⎪ ≤20 mA  
4.4  
4.4  
5.9  
5.9  
V
OUT  
= V or V  
3.98  
3.84  
IN  
IH  
IL  
I  
⎪ ≤4.0 mA  
6.0  
V
OUT  
= V or V  
IL  
5.7  
5.48  
5.34  
5.2  
IN  
IH  
I  
⎪ ≤5.2 mA  
V
OL  
Maximum LOW Level  
Output Voltage  
2.0  
4.5  
6.0  
4.5  
V
OUT  
= V or V  
0
0
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.4  
V
IN  
IH  
IL  
I  
⎪ ≤20 mA  
0
0.1  
0.1  
V
OUT  
= V or V  
0.2  
0.26  
0.33  
IN  
IH  
IL  
I  
⎪ ≤4.0 mA  
6.0  
V
OUT  
= V or V  
IL  
0.2  
0.26  
0.33  
0.4  
IN  
IH  
I  
⎪ ≤5.2 mA  
I
Maximum Input Current  
6.0  
6.0  
V
V
= V or GND  
0.1  
2.0  
1.0  
20  
1.0  
40  
mA  
mA  
IN  
IN  
CC  
I
Maximum Quiescent  
Supply Current  
= V or GND,  
CC  
= 0 mA  
CC  
IN  
I
OUT  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. For a power supply of 5 V 10% the worst case output voltages (V and V ) occur for HC at 4.5 V. Thus the 4.5 V values should be used  
OH  
OL  
when designing with this supply. Worst case V and V occur at V = 5.5 V and 4.5 V respectively. (The V value at 5.5 V is 3.85 V.) The  
IH  
IL  
CC  
IH  
worst case leakage current (I , I , and I ) occur for CMOS at the higher voltage and so the 6.0 V values should be used.  
IN CC  
OZ  
www.onsemi.com  
3
 
MM74HC08  
AC ELECTRICAL CHARACTERISTICS (V = 5.0 V, T = 25°C, C = 15 pF, t = t = 6 ns)  
CC  
A
L
r
f
Symbol  
Parameter  
Conditions  
Typ  
Guaranteed Limit Unit  
t
t
Maximum Propagation Delay, Output HIGHtoLOW  
Maximum Propagation Delay, Output LOWtoHIGH  
12  
20  
15  
ns  
ns  
PHL  
7
PLH  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
AC ELECTRICAL CHARACTERISTICS (V = 2.0 V to 6.0 V, C = 50 pF t = t = 6 ns, (unless otherwise specified))  
CC  
L
r
f
T
A
= 25°C  
T = 40°C to 125°C  
A
Typ  
77  
15  
13  
30  
10  
8
Guaranteed Limits  
Symbol  
Parameter  
V
CC  
(V)  
Conditions  
Unit  
t
Maximum Propagation Delay,  
Output HIGHtoLOW  
2.0  
121  
175  
35  
ns  
PHL  
4.5  
6.0  
2.0  
4.5  
6.0  
2.0  
4.5  
6.0  
24  
20  
90  
18  
15  
75  
15  
13  
30  
t
Maximum Propagation Delay,  
Output LOWtoHIGH  
134  
27  
ns  
ns  
PLH  
23  
t
t
Maximum Output Rise and Fall Time  
30  
8
110  
22  
TLH, THL  
7
19  
C
Power Dissipation Capacitance  
(Note 3)  
(per gate)  
38  
pF  
pF  
PD  
C
Maximum Input Capacitance  
4
10  
10  
IN  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2
3. C determines the no load dynamic power consumption, P = C  
V
f + I V , and the no load dynamic current consumption,  
PD  
D
PD CC  
CC CC  
I
= C  
V
f + I  
.
S
PD CC  
CC  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MM74HC08M  
SOIC14 NB, Case 751A03  
(PbFree and Halide Free)  
55 Units / Tube  
MM74HC08MX  
SOIC 14, Case 751EF  
(PbFree and Halide Free)  
2500 Units / Tape & Reel  
MM74HC08MTC  
MM74HC08MTCX  
TSSOP14 WB, Case 948G01  
(PbFree and Halide Free)  
96 Units / Tube  
2500 Units / Tape & Reel  
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
NOTE: All packages are lead free per JEDEC: JSTD020B standard.  
www.onsemi.com  
4
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC14 NB  
CASE 751A03  
ISSUE L  
14  
1
DATE 03 FEB 2016  
SCALE 1:1  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
0.10  
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
GENERIC  
MARKING DIAGRAM*  
SOLDERING FOOTPRINT*  
6.50  
14  
14X  
1.18  
XXXXXXXXXG  
AWLYWW  
1
1
XXXXX = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
1.27  
PITCH  
WW  
G
= Work Week  
= PbFree Package  
14X  
0.58  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
STYLES ON PAGE 2  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 1 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
SOIC14  
CASE 751A03  
ISSUE L  
DATE 03 FEB 2016  
STYLE 1:  
STYLE 2:  
CANCELLED  
STYLE 3:  
STYLE 4:  
PIN 1. NO CONNECTION  
2. CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. NO CONNECTION  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. NO CONNECTION  
2. ANODE  
3. ANODE  
4. NO CONNECTION  
5. ANODE  
6. NO CONNECTION  
7. ANODE  
8. ANODE  
9. ANODE  
10. NO CONNECTION  
11. ANODE  
12. ANODE  
13. NO CONNECTION  
14. COMMON CATHODE  
3. CATHODE  
4. NO CONNECTION  
5. CATHODE  
6. NO CONNECTION  
7. CATHODE  
8. CATHODE  
9. CATHODE  
10. NO CONNECTION  
11. CATHODE  
12. CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
STYLE 5:  
STYLE 6:  
STYLE 7:  
STYLE 8:  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. COMMON ANODE  
8. COMMON CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
7. CATHODE  
8. ANODE  
PIN 1. ANODE/CATHODE  
2. COMMON ANODE  
3. COMMON CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. COMMON CATHODE  
12. COMMON ANODE  
13. ANODE/CATHODE  
14. ANODE/CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. COMMON ANODE  
8. COMMON ANODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. NO CONNECTION  
12. ANODE/CATHODE  
13. ANODE/CATHODE  
14. COMMON CATHODE  
9. ANODE  
10. ANODE  
11. ANODE  
12. ANODE  
13. ANODE  
14. ANODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 2 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC14  
CASE 751EF  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13739G  
SOIC14  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TSSOP14 WB  
CASE 948G  
ISSUE C  
14  
DATE 17 FEB 2016  
1
SCALE 2:1  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
M
S
S
V
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
U−  
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
K
0.15 (0.006) T U  
A
V−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
A
B
C
D
F
G
H
J
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION NN  
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
J1  
K
W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
PLANE  
T−  
H
G
DETAIL E  
D
GENERIC  
MARKING DIAGRAM*  
14  
SOLDERING FOOTPRINT  
XXXX  
XXXX  
ALYWG  
G
7.06  
1
1
A
L
= Assembly Location  
= Wafer Lot  
Y
W
G
= Year  
= Work Week  
= PbFree Package  
0.65  
PITCH  
(Note: Microdot may be in either location)  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
01.34X6  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASH70246A  
TSSOP14 WB  
PAGE 1 OF 1  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
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