MJE700_06 [ONSEMI]

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT; 4.0安培达林顿功率晶体管互补硅40瓦50瓦


型号：	MJE700_06
厂家：	ONSEMI
描述：	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT 4.0安培达林顿功率晶体管互补硅40瓦50瓦晶体晶体管
文件：	总6页 (文件大小：85K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MJE700, MJE702, MJE703

(PNP) − MJE800, MJE802,

MJE803 (NPN)

Plastic Darlington

Complementary Silicon

Power Transistors

http://onsemi.com

These devices are designed for general−purpose amplifier and

low−speed switching applications.

4.0 AMPERE

DARLINGTON POWER

TRANSISTORS

Features

• High DC Current Gain − h = 2000 (Typ) @ I

COMPLEMENTARY SILICON

40 WATT

= 2.0 Adc

• Monolithic Construction with Built−in Base−Emitter Resistors to

Limit Leakage − Multiplication

50 WATT

• Choice of Packages − MJE700 and MJE800 Series

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

TO−225

CASE 77

STYLE 1

Collector−Emitter Voltage

Vdc

CEO

MJE700, MJE800

MJE702, MJE703, MJE802, MJE803

Collector−Base Voltage

Vdc

MJE700, MJE800

MJE702, MJE703, MJE802, MJE803

Emitter−Base Voltage

Collector Current

Base Current

5.0

4.0

0.1

Vdc

Adc

MARKING DIAGRAM

Total Power Dissipation @ T = 25_C

0.32

mW/_C

Derate above 25_C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

stg

YWW

JEx0yG

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

6.25

_C/W

= Year

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

= Work Week

JEx0y = Device Code

x = 7 or 8

y = 0, 2, or 3

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 8

MJE700/D

MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

MJE700, MJE800

−

Vdc

(BR)CEO

(I = 50 mAdc, I = 0)

MJE702, MJE703, MJE802, MJE803

Collector Cutoff Current

(V = 60 Vdc, I = 0)

mAdc

CEO

CBO

EBO

MJE700, MJE800

MJE702, MJE703, MJE802, MJE803

−

100

(V = 80 Vdc, I = 0)

Collector Cutoff Current

mAdc

(V = Rated BV

, I = 0)

, I = 0, T = 100_C)

−

100

500

CEO

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

−

2.0

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 1)

−

(I = 1.5 Adc, V = 3.0 Vdc)

MJE700, MJE702, MJE800, MJE802

MJE703, MJE803

750

100

−

(I = 2.0 Adc, V = 3.0 Vdc)

(I = 4.0 Adc, V = 3.0 Vdc)

All devices

Collector−Emitter Saturation Voltage (Note 1)

(I = 1.5 Adc, I = 30 mAdc)

Vdc

CE(sat)

MJE700, MJE702, MJE800, MJE802

MJE703, MJE803

−

2.5

2.8

3.0

(I = 2.0 Adc, I = 40 mAdc)

(I = 4.0 Adc, I = 40 mAdc)

All devices

Base−Emitter On Voltage (Note 1)

(I = 1.5 Adc, V = 3.0 Vdc)

BE(on)

MJE700, MJE702, MJE800, MJE802

MJE703, MJE803

−

2.5

3.0

(I = 2.0 Adc, V = 3.0 Vdc)

(I = 4.0 Adc, V = 3.0 Vdc)

All devices

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

1.0

−

(I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

TO−220AB

TO−126

100

125

150

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

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MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

4.0

= 30 V

I = I

B1 B2

& R VARIED TO OBTAIN DESIRED CURRENT LEVELS

−ꢂ30 V

I /I = 250 T = 25°C

C B

ꢃD , MUST BE FAST RECOVERY TYPE, e.g.:

ꢃꢃ1N5825 USED ABOVE I ≈ 100 mA

2.0

ꢃꢃMSD6100 USED BELOW I ≈ 100 mA

SCOPE

TUT

APPROX

+ꢂ8.0 V

1.0

0.8

≈ 6.0 k

≈ 150

0.6

0.4

APPROX

−12 V

+ 4.0 V

For t and t , D id disconnected

t @ V

= 0

BE(off)

25 ms

PNP

NPN

and V = 0, R and R are varied

t , t ≤ 10 ns

DUTY CYCLE = 1.0%

to obtain desired test currents.

0.2

For NPN test circuit, reverse diode,

polarities and input pulses.

0.04

0.1

0.2

0.4 0.6

1.0

2.0

4.0

0.06

I , COLLECTOR CURRENT (AMP)

Figure 2. Switching Times Test Circuit

Figure 3. Switching Times

1.0

0.7

D = 0.5

0.2

0.5

0.3

0.2

(pk)

0.1

(t) = r(t) q

0.05

= 3.12°C/W MAX

0.1

0.07

0.05

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.01

− T = P q (t)

C (pk) JC

J(pk)

DUTY CYCLE, D = t /t

1 2

0.03

0.02

SINGLE PULSE

0.01

0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0

5.0

20 30

100

200 300 500 1000

t, TIME (ms)

Figure 4. Thermal Response (MJE700, 800 Series)

ACTIVE−REGION SAFE−OPERATING AREA

7.0

5.0ꢁms

1.0ꢁms

100ꢁms

5.0ꢁms

5.0

1.0ꢁms

100ꢁms

3.0

2.0

3.0

2.0

T = 150°C

1.0

0.7

0.5

1.0

0.7

0.5

BONDING WIRE LIMITED

THERMALLY LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

@ T = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

0.3

0.2

0.3

0.2

MJE702, 703

MJE700

MJE802, 803

MJE800

0.1

5.0

0.1

5.0

7.0

100

7.0

100

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. MJE700 Series

Figure 6. MJE800 Series

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

The data of Figures 5 and 6 are based on T

= 150_C;

J(pk)

T is variable depending on conditions. Second breakdown

breakdown. Safe operating area curves indicate I − V

pulse limits are valid for duty cycles to 10% provided T

J(pk)

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

< 150_C. T

may be calculated from the data in Figure 4.

J(pk)

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

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MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

PNP

MJE700 Series

NPN

MJE800 Series

6.0 k

= 3.0 V

T = 125°C

4.0 k

3.0 k

4.0 k

3.0 k

25°C

2.0 k

25°C

−ꢂ55°C

1.0 k

800

1.0 k

800

600

400

300

400

300

0.04 0.06

0.1

0.2

0.4 0.6

1.0

2.0

4.0

0.04 0.06 0.1

0.2

0.4 0.6

1.0

2.0

4.0

I , COLLECTOR CURRENT (AMP)

Figure 7. DC Current Gain

3.4

3.0

2.6

2.2

1.8

1.4

3.4

T = 25°C

I =

0.5 A

3.0

2.6

2.2

1.8

I =

0.5 A

1.0 A

2.0 A

4.0 A

1.0 A

2.0 A

4.0 A

1.4

1.0

0.6

1.0

0.6

0.1 0.2

0.5 1.0

2.0

5.0 10

50 100

0.1

0.2

0.5

1.0 2.0

5.0

50 100

I , BASE CURRENT (mA)

Figure 8. Collector Saturation Region

2.2

1.8

1.4

1.0

0.6

0.2

2.2

T = 25°C

1.8

@ I /I = 250

C B

@ I /I = 250

BE(sat) C B

BE(sat)

@ V = 3.0 V

1.4

1.0

0.6

0.2

@ V = 3.0 V

@ I /I = 250

C B

CE(sat)

@ I /I = 250

C B

CE(sat)

0.04 0.06 0.1

0.2

0.4 0.6

1.0

2.0

4.0

0.04 0.06 0.1

0.2

0.4 0.6

1.0

2.0

4.0

I , COLLECTOR CURRENT (AMP)

Figure 9. “On” Voltages

http://onsemi.com

MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

ORDERING INFORMATION

Device

Package

Shipping

MJE700

TO−225

MJE700G

TO−225

(Pb−Free)

MJE702

TO−225

MJE702G

TO−225

(Pb−Free)

MJE703

TO−225

MJE703G

TO−225

(Pb−Free)

50 Units / Bulk

MJE800

TO−225

MJE800G

TO−225

(Pb−Free)

MJE802

TO−225

MJE802G

TO−225

(Pb−Free)

MJE803

TO−225

MJE803G

TO−225

(Pb−Free)

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MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD

077−09.

−B−

−A−

INCHES

DIM MIN MAX

MILLIMETERS

2 3

MIN

10.80

7.50

2.42

0.51

2.93

MAX

11.04

7.74

2.66

0.66

3.30

0.425

0.295

0.095

0.020

0.115

0.435

0.305

0.105

0.026

0.130

0.094 BSC

2.39 BSC

0.050

0.015

0.575

0.095

0.025

0.655

1.27

0.39

14.61

2.41

0.63

16.63

TYP

0.148

0.045

0.025

0.145

0.040

0.158

0.065

0.035

0.155

−−−

3.76

1.15

0.64

3.69

1.02

4.01

1.65

0.88

3.93

−−−

0.25 (0.010)

D 2 PL

0.25 (0.010)

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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For additional information, please contact your

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MJE700/D

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MJE700_06 [ONSEMI]

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