MJE5730 [ONSEMI]
POWER TRANSISTORS PNP SILICON; 功率晶体管PNP硅
| 型号： | MJE5730 |
| 厂家： | 
ONSEMI |
| 描述： | POWER TRANSISTORS PNP SILICON |
| 文件： | 总6页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by MJE5730/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for line operated audio output amplifier, SWITCHMODE power supply
drivers and other switching applications.
1.0 AMPERE
POWER TRANSISTORS
PNP SILICON
300–350–400 VOLTS
40 WATTS
•
•
•
•
300 V to 400 V (Min) — V
CEO(sus)
1.0 A Rated Collector Current
Popular TO–220 Plastic Package
PNP Complements to the TIP47 thru TIP50 Series
CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Rating
Symbol
MJE5730
300
MJE5731
350
MJE5731A
375
Unit
Vdc
Vdc
Vdc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
CEO
V
CB
300
350
375
V
EB
5.0
Collector Current — Continuous
Peak
I
C
1.0
3.0
Base Current
I
B
1.0
Adc
Total Power Dissipation
P
D
@ T = 25 C
40
0.32
Watts
W/ C
C
Derate above 25 C
Total Power Dissipation
P
D
@ T = 25 C
2.0
0.016
Watts
W/ C
A
Derate above 25 C
Unclamped Inducting Load Energy (See Figure 10)
Operating and Storage Junction Temperature Range
E
20
mJ
C
T , T
stg
–65 to +150
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
R
3.125
62.5
θJC
θJA
REV 1
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(I = 30 mAdc, I = 0)
V
Vdc
CEO(sus)
MJE5730
MJE5731
MJE5731A
300
350
375
—
—
—
C
B
Collector Cutoff Current
I
mAdc
mAdc
mAdc
CEO
(V
CE
(V
CE
(V
CE
= 200 Vdc, I = 0)
MJE5730
MJE5731
MJE5731A
—
—
—
1.0
1.0
1.0
B
= 250 Vdc, I = 0)
B
= 300 Vdc, I = 0)
B
Collector Cutoff Current
I
CES
EBO
(V
CE
(V
CE
(V
CE
= 300 Vdc, V
= 350 Vdc, V
= 400 Vdc, V
= 0)
= 0)
= 0)
MJE5730
MJE5731
MJE5731A
—
—
—
1.0
1.0
1.0
BE
BE
BE
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
1.0
BE
C
ON CHARACTERISTICS (1)
DC Current Gain
h
FE
(I = 0.3 Adc, V
= 10 Vdc)
= 10 Vdc)
30
10
150
—
—
C
CE
CE
(I = 1.0 Adc, V
C
Collector–Emitter Saturation Voltage
(I = 1.0 Adc, I = 0.2 Adc)
V
—
1.0
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage
(I = 1.0 Adc, V = 10 Vdc)
V
BE(on)
—
1.5
C
CE
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
f
10
25
—
—
MHz
—
T
(I = 0.2 Adc, V
C CE
= 10 Vdc, f = 2.0 MHz)
Small–Signal Current Gain
(I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz)
h
fe
C
CE
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
200
1.4
V
= 10 V
CE
1.2
1
100
T
= 150°C
J
25°C
50
T
= 25°C
J
30
20
–55°C
0.8
0.6
10
–55°C
0.4
0.2
0
150°C
5.0
V
@ I /I = 5.0
C B
CE(sat))
3.0
2.0
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 1. DC Current Gain
Figure 2. Collector–Emitter Saturation Voltage
2
Motorola Bipolar Power Transistor Device Data
1.4
1.2
1.0
0.8
SECOND BREAKDOWN
DERATING
T
= – 55°C
1.0
0.8
J
V
@ I /I = 5.0
C B
BE(sat)
0.6
0.4
0.2
0
THERMAL
DERATING
25°C
0.6
0.4
0.2
0
150°C
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0
0
25
50
75
100
125
150
C)
175
T
, CASE TEMPERATURE (
°
C
I
, COLLECTOR CURRENT (AMPS)
C
Figure 3. Base–Emitter Voltage
Figure 4. Normalized Power Derating
10
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
5.0
2.0
1.0
0.5
down. Safe operating area curves indicate I – V
limits of
100 µs
C
CE
1.0 ms
dc
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
500 µs
T
= 25°C
C
The data of Figure 5 is based on T
= 150 C; T is
C
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
0.2
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
J(pk)
may be calculated from the data in Figure 6.
150 C. T
0.05
J(pk)
MJE5730
MJE5731
MJE5732
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
0.02
0.01
5.0
10
20
30
50
100
200 300
500
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 5. Forward Bias Safe Operating Area
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
0.02
P
0.1
(pk)
R
R
= r(t) R
θ
θ
θ
JC(t)
= 3.125
JC
C/W MAX
0.07
0.05
°
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t
1
0.03
0.02
READ TIME AT t
1
t
2
0.01
T
– T = P
θ
J(pk)
C
(pk) JC(t)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.02
0.01
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1 k
t, TIME (ms)
Figure 6. Thermal Response
3
Motorola Bipolar Power Transistor Device Data
TURN–ON PULSE
t
1
V
BE(off)
V
0 V
in
V
CC
R
R
C
APPROX
SCOPE
t
≤
7.0 ns
< 500 µs
1
.
100
≤
t
2
B
–11 V
t
< 15 ns
3
V
in
t
t
3
2
C
<< C
eb
51
jd
+4.0 V
APPROX. +9.0 V
DUTY CYCLE 2.0%
≈
TURN–OFF PULSE
Figure 7. Switching Time Equivalent Circuit
5.0
1.0
0.5
T
= 25°C
= 200 V
J
t
3.0
2.0
T
= 25°C
= 200 V
/I = 5.0
s
J
t
V
r
CC
/I = 5.0
V
I
CC
I
C B
0.3
0.2
C B
t
f
t
1.0
0.5
d
0.1
0.3
0.2
0.05
0.03
0.02
0.1
0.01
0.02 0.03
0.05
0.02
0.1
0.2
0.3
0.5
1.0
2.0
0.1
0.2
0.3
0.5
1.0
2.0
0.05
0.03
0.05
I
, COLLECTOR CURRENT (AMPS)
I
, COLLECTOR CURRENT (AMPS)
C
C
Figure 8. Turn–On Resistive Switching Times
Test Circuit
Figure 9. Resistive Turn–Off Switching Times
Voltage and Current Waveforms
t
≈
3 ms
w
(SEE NOTE 1)
V
MONITOR
CE
0 V
–5 V
INPUT
VOLTAGE
R
150
=
Ω
BB1
TUT
MJE171
100 mH
+
100 ms
50
V
= 20 V
INPUT
CC
MONITOR
0.63 A
–
I
COLLECTOR
CURRENT
C
50
R
100
=
Ω
BB2
0 V
R
S
0.1
=
Ω
V
0
=
V
+
–
BB2
CER
V
= 10 V
BB1
COLLECTOR
VOLTAGE
10 V
V
CE(sat)
Figure 10. Inductive Load Switching
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
MAX
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
1
2
3
U
H
L
R
J
V
G
T
U
V
D
N
Z
0.080
2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
5
Motorola Bipolar Power Transistor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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MJE5730/D
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