MJD31C-1 [ONSEMI]
3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3;
| 型号： | MJD31C-1 |
| 厂家： | 
ONSEMI |
| 描述： | 3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3 放大器 晶体管 |
| 文件： | 总11页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD31, NJVMJD31T4G,
MJD31C, NJVMJD31CT4G
(NPN), MJD32,
NJVMJD32T4G, MJD32C,
NJVMJD32CG,
NJVMJD32CT4G (PNP)
http://onsemi.com
Complementary Power
Transistors
SILICON
POWER TRANSISTORS
3 AMPERES
DPAK For Surface Mount Applications
40 AND 100 VOLTS
15 WATTS
Designed for general purpose amplifier and low speed switching
applications.
COMPLEMENTARY
Features
COLLECTOR
2,4
COLLECTOR
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• Epoxy Meets UL 94, V−0 @ 0.125 in
2,4
1
1
BASE
BASE
3
3
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
EMITTER
EMITTER
4
• These Devices are Pb−Free and are RoHS Compliant
4
1
2
1
2
3
3
DPAK
IPAK
CASE 369C
STYLE 1
CASE 369D
STYLE 1
MARKING DIAGRAMS
YWW
J3xxG
AYWW
J3xxG
DPAK
IPAK
A
Y
= Site Code
= Year
WW
xx
G
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
July, 2013 − Rev. 12
MJD31/D
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
V
CEO
Vdc
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
40
100
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
Collector−Base Voltage
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
V
CB
Vdc
40
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
V
5.0
3.0
5.0
1.0
Vdc
Adc
Adc
Adc
EB
I
C
I
CM
I
B
Total Power Dissipation
P
D
W
W/°C
15
0.12
@ T = 25°C
C
Derate above 25°C
Total Power Dissipation
P
D
W
W/°C
1.56
0.012
@ T = 25°C
A
Derate above 25°C
Operating and Storage Junction Temperature Range
ESD − Human Body Model
T , T
−65 to +150
°C
V
J
stg
HBM
3B
C
ESD − Machine Model
MM
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
8.3
80
Unit
°C/W
°C/W
°C
R
q
JC
Thermal Resistance, Junction−to−Ambient*
R
q
JA
Lead Temperature for Soldering Purposes
T
260
L
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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2
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
V
Vdc
CEO(sus)
(I = 30 mAdc, I = 0)
C
B
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
−
−
40
100
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
I
mAdc
Collector Cutoff Current
CEO
(V = 40 Vdc, I = 0)
CE
B
−
−
50
50
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
(V = 60 Vdc, I = 0)
CE
B
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
ICES
mAdc
Collector Cutoff Current
−
−
20
1
(V = Rated V
, V = 0)
CEO EB
CE
I
mAdc
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
EBO
BE
C
ON CHARACTERISTICS (Note 1)
h
FE
DC Current Gain
(I = 1 Adc, V = 4 Vdc)
25
10
−
50
C
CE
(I = 3 Adc, V = 4 Vdc)
C
CE
V
Vdc
Vdc
Collector−Emitter Saturation Voltage
(I = 3 Adc, I = 375 mAdc)
CE(sat)
−
−
1.2
1.8
C
B
V
Base−Emitter On Voltage
(I = 3 Adc, V = 4 Vdc)
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
MHz
Current Gain − Bandwidth Product (Note 2)
T
3
−
−
(I = 500 mAdc, V = 10 Vdc, f = 1 MHz)
C
CE
test
h
Small−Signal Current Gain
(I = 0.5 Adc, V = 10 Vdc, f = 1 kHz)
fe
20
C
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f = ⎪h ⎪• f
.
test
T
fe
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3
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS
V
CC
+ꢂ30 V
T
A
T
C
2.5 25
R
C
25 ms
2
20
+11 V
0
R
B
SCOPE
1.5 15
D
T (SURFACE MOUNT)
A
1
51
-ꢂ9 V
t , t ≤ 10 ns
DUTY CYCLE = 1%
T
C
r
f
-ꢂ4 V
1
0.5
0
10
5
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
C
ꢃD MUST BE FAST RECOVERY TYPE, e.g.:
B
1
ꢃꢃ1N5825 USED ABOVE I ≈ 100 mA
ꢃꢃMSD6100 USED BELOW I ≈ 100 mA
B
B
REVERSE ALL POLARITIES FOR PNP.
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
1
3
2
I
= I
B1 B2
I /I = 10
I /I = 10
C B
T = 25°C
J
t ′
s
C B
t @ V = 30 V
CC
r
t ′ = t - 1/8 t
f
s
s
1
0.7
0.5
t @ V = 30 V
f CC
T = 25°C
J
0.7
0.5
0.3
t @ V = 10 V
CC
r
0.3
0.2
t @ V = 10 V
f CC
0.1
0.07
0.05
t @ V
d
= 2 V
0.1
0.07
0.05
BE(off)
0.03
0.02
0.03
0.03
0.07 0.1
0.3
0.5 0.7
1
0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7
1
2
3
0.05
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 4. Turn−Off Time
Figure 3. Turn−On Time
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
P
(pk)
R
R
= r(t) R
q
JC
q
0.1
JC(t)
= 8.33°C/W MAX
q
JC
0.05
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.07
0.05
t
1
0.01
1
t
2
T
- T = P q
C (pk) JC(t)
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
1 k
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30
50
100
200 300 500
t, TIME (ms)
Figure 5. Thermal Response
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4
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
1000
150°C
V
CE
= 2 V
V
CE
= 4 V
150°C
25°C
25°C
100
10
1
−55°C
100
10
1
−55°C
0.01
0.1
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 6. DC Current Gain at VCE = 4 V
Figure 7. DC Current Gain at VCE = 2 V
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I /I = 10
I /I = 10
C
B
C
B
−55°C
25°C
150°C
150°C
25°C
−55°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 8. Collector−Emitter Saturation Voltage
Figure 9. Base−Emitter Saturation Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
2
1.6
1.2
0.8
0.4
0
V
= 5 V
T =
25°C
CE
A
−55°C
25°C
100 mA 500 mA
I
C
= 3 A
150°C
1 A
10 mA
0.01
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 10. Base-Emitter “On” Voltage
Figure 11. Collector Saturation Region
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
100
10
1
T = 25°C
A
V
= 5 V
CE
T = 25°C
A
C
ib
100
10
1
C
ob
0.1
1
10
100
0.001
0.01
0.1
1
10
V , REVERSE VOLTAGE (V)
R
I , COLLECTOR CURRENT (A)
C
Figure 12. Capacitance
Figure 13. Current−Gain−Bandwidth Product
10
1
0.1
0.01
1
10
, COLLECTOR−EMITTER VOLTAGE (V)
100
V
CE
Figure 14. Safe Operating Area
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1000
1000
100
10
V
CE
= 2 V
V
CE
= 4 V
25°C
25°C
150°C
150°C
100
10
1
−55°C
−55°C
1
0.01
0.1
1
10
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 16. DC Current Gain at VCE = 2 V
Figure 15. DC Current Gain at VCE = 4 V
1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I /I = 10
I /I = 10
C B
C
B
150°C
−55°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−55°C
25°C
150°C
25°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 17. Collector−Emitter Saturation
Figure 18. Base−Emitter Saturation Voltage
Voltage
2
1.6
1.2
0.8
0.4
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T =
25°C
A
V
CE
= 5 V
500 mA
I
C
= 3 A
100 mA
1 A
150°C
25°C
−55°C
10 mA
0.01
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (A)
C
Figure 20. Collector Saturation Region
Figure 19. Base−Emitter “On” Voltage
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS
1000
100
10
1
V
= 5 V
T = 25°C
A
CE
T = 25°C
A
C
ib
100
10
1
C
ob
0.1
1
10
100
0.001
0.01
0.1
1
10
V , REVERSE VOLTAGE (V)
R
I , COLLECTOR CURRENT (A)
C
Figure 21. Capacitance
Figure 22. Current−Gain−Bandwidth Product
10
1 ms
1
1 s
0.1
0.01
1
10
, COLLECTOR−EMITTER VOLTAGE (V)
100
V
CE
Figure 23. Safe Operating Area
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
ORDERING INFORMATION
†
Device
Package Type
Package
Shipping
MJD31CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD31C1G
IPAK
369D
369C
369C
369C
369C
369C
369C
369C
369C
369C
369C
369C
369C
369C
75 Units / Rail
(Pb−Free)
MJD31CRLG
MJD31CT4G
NJVMJD31CT4G
MJD31T4G
DPAK
(Pb−Free)
1,800 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
75 Units / Rail
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
NJVMJD31T4G
MJD32CG
DPAK
(Pb−Free)
DPAK
(Pb−Free)
NJVMJD32CG
MJD32CRLG
MJD32CT4G
NJVMJD32CT4G
MJD32RLG
DPAK
(Pb−Free)
75 Units / Rail
DPAK
(Pb−Free)
1,800 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
1,800 / Tape & Reel
2,500 / Tape & Reel
2,500 / Tape & Reel
DPAK
(Pb−Free)
DPAK
(Pb−Free)
DPAK
(Pb−Free)
MJD32T4G
DPAK
(Pb−Free)
NJVMJD32T4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
C
Y14.5M, 1994.
A
2. CONTROLLING DIMENSION: INCHES.
A
E
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
c2
H
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
b3
B
4
2
L3
L4
Z
D
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
PLANE
SEATING
PLANE
L2
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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10
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
T
0.13 (0.005)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and
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MJD31/D
相关型号：
MJD31C-TP-HF
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3/2
MCC
MJD31CQ-13
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
DIODES
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