MCR100-3G [ONSEMI]
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors; 敏感栅硅控整流器反向阻断晶闸管
| 型号： | MCR100-3G |
| 厂家： | 
ONSEMI |
| 描述： | Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| 文件： | 总7页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCR100 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
http://onsemi.com
SCRs
0.8 A RMS
100 thru 600 V
Features
G
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
A
K
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 A RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
TO−92
CASE 29
STYLE 10
• Immunity to dV/dt − 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Pb−Free Packages are Available*
1
1
2
2
3
3
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MCR
100−x
AYWWG
G
x
A
Y
= Specific Device Code
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
2
3
Cathode
Gate
Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 7
MCR100/D
MCR100 Series
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Notes 1 and 2)
V
V
DRM,
(T = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)
J
V
RRM
MCR100−3
MCR100−4
MCR100−6
MCR100−8
100
200
400
600
On-State RMS Current, (T = 80°C) 180° Conduction Angles
I
0.8
10
A
A
C
T(RMS)
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T = 25°C)
I
J
TSM
2
2
Circuit Fusing Consideration, (t = 8.3 ms)
I t
0.415
0.1
A s
P
W
W
A
Forward Peak Gate Power, (T = 25°C, Pulse Width v 1.0 ms)
GM
A
Forward Average Gate Power, (T = 25°C, t = 8.3 ms)
P
0.10
A
G(AV)
I
1.0
Forward Peak Gate Current, (T = 25°C, Pulse Width v 1.0 ms)
GM
A
V
5.0
V
Reverse Peak Gate Voltage, (T = 25°C, Pulse Width v 1.0 ms)
GRM
A
Operating Junction Temperature Range @ Rate V
and V
T
−40 to 110
−40 to 150
°C
°C
RRM
DRM
J
Storage Temperature Range
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
and V
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
DRM
RRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
Lead Solder Temperature
Symbol
Max
Unit
R
R
75
200
°C/W
q
JC
JA
q
T
260
°C
L
(t1/16″ from case, 10 secs max)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current (Note 2)
I
, I
mA
DRM RRM
T
T
= 25°C
= 110°C
−
−
−
−
10
100
C
C
(V = Rated V
and V
; R = 1 kW)
D
DRM
RRM
GK
ON CHARACTERISTICS
*
Peak Forward On−State Voltage
V
I
−
−
−
1.7
V
mA
mA
mA
V
TM
(I = 1.0 A Peak @ T = 25°C)
TM
A
Gate Trigger Current (Continuous dc) (Note 3)
T
= 25°C
40
200
C
GT
(V = 7.0 Vdc, R = 100 W)
AK
L
(2)
Holding Current
T
T
= 25°C
= −40°C
I
−
−
0.5
−
5.0
10
C
C
H
(V = 7.0 Vdc, Initiating Current = 20 mA)
AK
Latch Current
(V = 7.0 V, Ig = 200 mA)
AK
T
T
= 25°C
= −40°C
I
−
−
0.6
−
10
15
C
C
L
Gate Trigger Voltage (Continuous dc) (Note 3)
T
= 25°C
V
−
−
0.62
−
0.8
1.2
C
GT
(V = 7.0 Vdc, R = 100 W)
T = −40°C
C
AK
L
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V = Rated V
dV/dt
di/dt
20
−
35
−
−
V/ms
A/ms
, Exponential Waveform, R = 1000 W,T = 110°C)
D
DRM
GK
J
Critical Rate of Rise of On−State Current
50
(I = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
PK
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
3. R = 1000 W included in measurement.
GK
4. Does not include R in measurement.
GK
http://onsemi.com
2
MCR100 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
Symbol
Parameter
TM
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
I
Holding Current
H
I
at V
DRM
Reverse Blocking Region
(off state)
DRM
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −
100
90
1.0
0.9
0.8
80
70
60
50
40
30
0.7
0.6
0.5
0.4
0.3
0.2
20
10
−40 −25 −10
5
20 35 50 65 80 95 110
−40 −25 −10
5
20 35 50
65 80 95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
http://onsemi.com
3
MCR100 Series
1000
100
10
1000
100
10
−40 −25 −10
−40 −25 −10
5
20 35 50 65 80 95 110
5
20 35 50 65 80 95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Typical Holding Current versus
Junction Temperature
Figure 4. Typical Latching Current versus
Junction Temperature
120
110
10
MAXIMUM @ T = 25°C
J
MAXIMUM @ T = 110°C
J
100
90
DC
1
80
70
60
180°
50
40
30°
0.2
60°
90°
120°
0.1
0
0.1
0.3
0.4
0.5
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
I
, RMS ON-STATE CURRENT (AMPS)
T(RMS)
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 5. Typical RMS Current Derating
Figure 6. Typical On−State Characteristics
http://onsemi.com
4
MCR100 Series
ORDERING INFORMATION
Device
†
Package Code
Shipping
MCR100−003
MCR100−004
5000 Units / Box
MCR100−006
MCR100−008
MCR100−3RL
MCR100−6RL
MCR100−6RLRA
MCR100−6RLRM
MCR100−6ZL1
MCR100−8RL
MCR100−3G
TO−92 (TO−226)
2000 / Tape & Reel
2000 / Tape & Ammo Pack
2000 / Tape & Reel
MCR100−4G
5000 Units / Box
MCR100−6G
MCR100−8G
MCR100−3RLG
MCR100−6RLG
MCR100−6RLRAG
MCR100−6RLRMG
MCR100−6ZL1G
MCR100−8RLG
TO−92 (TO−226)
(Pb−Free)
2000 / Tape & Reel
2000 / Tape & Ammo Pack
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
MCR100 Series
TO−92 EIA RADIAL TAPE IN BOX OR ON REEL
H2A
H2A
H2B
H2B
H
W2
H4
H5
T1
L1
H1
W1
W
L
T
T2
F1
F2
D
P2
P1
P2
P
Figure 7. Device Positioning on Tape
Specification
Millimeter
Inches
Min
Max
Min
Max
Symbol
Item
D
0.1496
0.015
0.0945
.059
0.1653
3.8
0.38
2.4
1.5
8.5
0
4.2
Tape Feedhole Diameter
D2
F1, F2
H
0.020
0.110
.156
0.51
2.8
Component Lead Thickness Dimension
Component Lead Pitch
4.0
Bottom of Component to Seating Plane
Feedhole Location
H1
H2A
H2B
H4
H5
L
0.3346
0
0.3741
0.039
0.051
0.768
0.649
0.433
—
9.5
1.0
Deflection Left or Right
0
0
1.0
Deflection Front or Rear
0.7086
0.610
0.3346
0.09842
0.4921
0.2342
0.1397
0.06
18
19.5
16.5
11
Feedhole to Bottom of Component
Feedhole to Seating Plane
Defective Unit Clipped Dimension
Lead Wire Enclosure
15.5
8.5
2.5
12.5
5.95
3.55
0.15
—
L1
—
P
0.5079
0.2658
0.1556
0.08
12.9
6.75
3.95
0.20
1.44
0.65
19
Feedhole Pitch
P1
P2
T
Feedhole Center to Center Lead
First Lead Spacing Dimension
Adhesive Tape Thickness
Overall Taped Package Thickness
Carrier Strip Thickness
T1
—
0.0567
0.027
0.7481
0.2841
0.01968
T2
0.014
0.6889
0.2165
.0059
0.35
17.5
5.5
.15
W
Carrier Strip Width
W1
W2
6.3
Adhesive Tape Width
0.5
Adhesive Tape Position
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Hold down tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
http://onsemi.com
6
MCR100 Series
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
STRAIGHT LEAD
BULK PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021 0.407
D
0.055
0.105
0.020
1.15
2.42
0.39
X X
G
J
H
V
K
L
−−− 12.70
−−−
0.105
6.35
2.04
−−−
−−−
N
P
R
V
2.66
2.54
−−−
C
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
2.93
3.43
1
N
−−−
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
AMMO PACK
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
MILLIMETERS
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
−−−
K
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
−−−
V
C
−−−
SECTION X−X
1
N
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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For additional information, please contact your local
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MCR100/D
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