MCH6001-TL-E [ONSEMI]
射频晶体管，NPN 双沟道，8 V，150 mA，fT = 16 GHz;
| 型号： | MCH6001-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | 射频晶体管，NPN 双沟道，8 V，150 mA，fT = 16 GHz 射频 晶体管 |
| 文件： | 总6页 (文件大小：486K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1601A
MCH6001
RF Transistor
8V, 150mA, f =16GHz NPN Dual MCPH6
T
http://onsemi.com
Features
•
Low-noise use : NF=1.2dB typ (f=1GHz)
•
High cut-off frequency : f =16GHz typ (V =5V)
T
CE
High gain : S21e 2=16dB typ (f=1GHz)
•
•
|
|
Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
15
8
CBO
V
V
CEO
V
2
V
EBO
I
C
150
400
600
150
mA
mW
mW
°C
Collector Dissipation
Total Dissipation
P
P
When mounted on glass epoxy substrate 1unit
When mounted on glass epoxy substrate
C
T
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: MCPH6
7022A-019
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
MCH6001-TL-E
2.0
0.15
Packing Type : TL
Marking
6
5
4
3
0 to 0.02
GT
TL
1
2
0.65
0.3
Electrical Connection
1 : Base1
2 : Emitter1
C1
E2
B2
3 : Collector2
4 : Base2
5 : Emitter2
6 : Collector1
1
2
3
4
MCPH6
6
5
B1
E1
C2
Semiconductor Components Industries, LLC, 2013
August, 2013
92612 TKIM/N1809AB TKIM TC-00002075 No. A1601-1/6
MCH6001
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.0
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I
V
=5V, I =0A
A
A
μ
CBO
CB E
I
V
=1V, I =0A
1.0
μ
EBO
EB C
h
V
CE
=5V, I =50mA
60
13
150
FE
C
Gain-Bandwidth Product
Forward Transfer Gain
Noise Figure
f
T
V
=5V, I =50mA
16
GHz
dB
CE C
S21e 2
V
CE
=5V, I =50mA, f=1GHz
C
16
|
|
NF
V
CE
=1V, I =10mA, f=1GHz
1.2
1.8
dB
C
Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
Package
MCPH6
Shipping
memo
MCH6001-TL-E
3,000pcs./reel
Pb Free
I
C
-- V
CE
I
-- V
C BE
140
120
100
80
150
120
90
60
60
40
30
20
0
I =0mA
B
0
0
0
2
4
6
8
0.2
0.4
0.6
0.8
1.0
1.2
IT13902
Base-to-Emitter Voltage, V
BE
-- V
Collector-to-Emitter Voltage, V
CE
-- V IT13901
No. A1601-2/6
MCH6001
h
-- I
Cre -- V
CB
FE
C
2
1.0
f=1MHz
7
5
V
=5V
CE
100
1V
7
5
3
2
3
2
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
1.0
10
100
0.1
1.0
10
IT13904
Collector Current, I -- mA
C
IT13903
Collector-to-Base Voltage, V
-- V
CB
2
|S21e| -- I
C
Cob -- V
CB
3
2
20
15
10
f=1MHz
1.0
7
5
5
0
3
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
1.0
10
100
0.1
1.0
10
IT13905
Collector-to-Base Voltage, V
-- V
Collector Current, I -- mA
C
IT15151
CB
f
T
-- I
C
NF -- I
C
4
3
2
100
f=1GHz
7
5
3
2
10
7
5
1
0
3
2
1.0
1.0
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
10
100
IT15152
1.0
10
100
Collector Current, I -- mA
IT13908
Collector Current, I -- mA
C
C
P
P
-- Ta
T,
C
700
600
500
400
300
200
100
0
When mounted on glass epoxy substrate
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT15153
No. A1601-3/6
MCH6001
Embossed Taping Specification
MCH6001-TL-E
No. A1601-4/6
MCH6001
Outline Drawing
Land Pattern Example
MCH6001-TL-E
Mass (g) Unit
Unit: mm
0.008
mm
* For reference
0.4
0.65 0.65
No. A1601-5/6
MCH6001
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PS No. A1601-6/6
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