MCH3484 [ONSEMI]
Single N-Channel Power MOSFET;型号: | MCH3484 |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET 光电二极管 |
文件: | 总5页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCH3484
Power MOSFET
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20V, 40mΩ, 4.5A, Single N-Channel
Electrical Connection
Features
On-Resistance R (on)1=33m (typ)
0.9V Drive
N-Channel
DS
3
Pb-Free, Halogen Free and RoHS Compliance
ESD Diode-Protected Gate
1
Specifications
1 : Gate
2 : Source
3 : Drain
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Value
Unit
V
2
Drain to Source Voltage
V
DSS
20
5
V
Gate to Source Voltage
Drain Current (DC)
V
GSS
A
I
4.5
D
Packing Type : TL Marking
Drain Current (Pulse)
A
I
18
DP
PW10s, duty cycle1%
Power Dissipation
FR
When mounted on ceramic substrate
(900mm20.8mm)
P
D
1.0
W
Junction Temperature
Operating Temperature
Storage Temperature
Tj
150
C
C
C
TL
Topr
Tstg
5 to +150
55 to +150
Thermal Resistance Ratings
Parameter
Symbol
Value
125
Unit
Junction to Ambient
R
When mounted on ceramic substrate
C/W
JA
(900mm2 0.8mm)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January 2015 - Rev. 2
1
Publication Order Number :
MCH3484/D
MCH3484
Electrical Characteristics at Ta 25C
Value
typ
Parameter
Symbol
Conditions
Unit
min
20
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(
)
I
=1mA, V =0V
V
A
A
V
BR DSS
D
GS
I
I
V
V
V
V
=20V, V =0V
1
DSS
DS
GS
DS
DS
GS
=±4V, V =0V
DS
10
GSS
V
(th)
GS
=10V, I =1mA
0.3
0.8
D
Forward Transconductance
g
=10V, I =2A
5.6
S
FS
D
R
R
R
R
(on)1
(on)2
(on)3
(on)4
I
I
I
I
=2A, V =2.5V
GS
33
37
40
49
m
m
m
m
pF
pF
pF
ns
DS
DS
DS
DS
D
D
D
D
=1A, V =1.8V
GS
Static Drain to Source On-State Resistance
=0.5A, V =1.2V
GS
79
119
330
=0.1A, V =0.9V
GS
165
630
75
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
DS
65
t (on)
d
8.9
49
t
ns
r
See specified Test Circuit
Turn-OFF Delay Time
Fall Time
t (off)
d
63
ns
t
57
ns
f
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qg
11
nC
nC
nC
V
Qgs
Qgd
V
=10V, V =2.5V, I =4.5A
0.9
1.8
0.8
DS GS
D
V
SD
I =4.5A, V =0V
S GS
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
=10V
V
DD
IN
2.5V
0V
I
=2A
D
V
IN
R =5
L
D
V
OUT
PW=10s
D.C.≤1%
G
MCH3484
P.G
50
S
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2
MCH3484
I
-- V
I
D
-- V
D
DS
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
6
5
4
3
2
V
DS
=10V
1.4V
1
0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain to Source Voltage, V
-- V
Gate to Source Voltage, V -- V
GS
DS
R
(on) -- V
R
(on) -- Ta
DS
GS
DS
500
450
400
350
300
250
200
150
100
250
200
150
100
Ta=25°C
I =0.1A
D
0.5A
1.0A
2.0A
0.5A
=
, I
D
=1.2V
V
GS
50
0
50
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
10
--25
0
25
50
75
100
125
150
175
Gate to Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
GS
gFS -- I
I
-- V
D
S
SD
10
10
7
5
V
=10V
V
GS
=0V
DS
7
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.0
Drain Current, I -- A
Forward Diode Voltage, V
-- V
D
SD
D
R
(on) -- I
SW Time -- I
DS
D
500
450
400
350
300
250
200
150
100
100
V
V
=10V
=2.5V
DD
GS
7
5
V
=0.9V
GS
3
2
t (on)
d
10
7
5
3
2
1.8V
2.5V
50
0
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
1.0
10
0.01
0.1
1.0
Drain Current, I -- A
Drain Current, I -- A
D
D
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3
MCH3484
Ciss, Coss, Crss -- V
V
-- Qg
GS
DS
10000
2.5
2.0
1.5
1.0
f=1MHz
V
=10V
7
5
DS
I =4.5A
D
3
2
1000
Ciss
7
5
3
2
100
7
5
0.5
0
3
2
10
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
11
Drain to Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
DS
S O A
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
100
7
When mounted on ceramic substrate
5
(900mm2×0.8mm)
3
2
I
=18A (PW≤10μs)
DP
10
7
5
I =4.5A
D
3
2
1.0
7
5
3
2
Operation in this area
is limited by R (on).
DS
0.1
7
5
0.2
0
Ta=25°C
3
2
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
2
3
5 7
2
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
0.1
1.0
10
100
Drain to Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
DS
R
-- Pulse Time
θJA
1000
7
5
3
2
100
7
5
Duty Cycle=0.5
0.2
3
2
0.1
10
7
5
0.05
3
2
1.0
7
5
3
2
When mounted on ceramic substrate
(900mm2×0.8mm)
0.1
0.000001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
0.00001
0.0001
0.001
0.01
0.1
1.0
Pulse Time, PT -- s
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4
MCH3484
Package Dimensions
MCH3484-TL-H / MCH3484-TL-W
MCPH3
CASE 419AQ
ISSUE O
unit : mm
1 : Gate
2 : Source
3 : Drain
Recommended
Soldering Footprint
0.4
0.65 0.65
ORDERING INFORMATION
Device
Package
Shipping
Note
MCH3484-TL-H
MCPH3
SC-70,SOT-323
Pb-Free
and Halogen Free
3,000 pcs. / reel
MCH3484-TL-W
Note on usage : Since the MCH3484 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
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