MC74VHC1G00DTT3 [ONSEMI]

AHC/VHC SERIES, 2-INPUT NAND GATE, PDSO5, SC-59, SOT-23, TSOP-5;
MC74VHC1G00DTT3
型号: MC74VHC1G00DTT3
厂家: ONSEMI    ONSEMI
描述:

AHC/VHC SERIES, 2-INPUT NAND GATE, PDSO5, SC-59, SOT-23, TSOP-5

栅 输入元件 光电二极管 逻辑集成电路 触发器
文件: 总6页 (文件大小:115K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74VHC1G00  
Single 2-Input NAND Gate  
The MC74VHC1G00 is an advanced high speed CMOS 2input  
NAND gate fabricated with silicon gate CMOS technology.  
The internal circuit is composed of multiple stages, including a  
buffer output which provides high noise immunity and stable output.  
The MC74VHC1G00 input structure provides protection when  
voltages up to 7.0 V are applied, regardless of the supply voltage. This  
allows the MC74VHC1G00 to be used to interface 5.0 V circuits to  
3.0 V circuits.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
5
High Speed: t = 3.0 ns (Typ) at V = 5.0 V  
PD  
CC  
V1M G  
SC88A / SOT353 / SC70  
DF SUFFIX  
G
Low Power Dissipation: I = 1 mA (Max) at T = 25°C  
CC  
A
1
5
Power Down Protection Provided on Inputs  
Balanced Propagation Delays  
Pin and Function Compatible with Other Standard Logic Families  
Chip Complexity: FETs = 56  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ100  
Qualified and PPAP Capable  
CASE 419A  
V1 M G  
G
TSOP5 / SOT23 / SC59  
DT SUFFIX  
1
CASE 483  
These Devices are PbFree and are RoHS Compliant  
V1 = Device Code  
M
= Date Code*  
G
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or position may  
vary depending upon manufacturing location.  
5
4
IN B  
IN A  
GND  
1
2
3
V
CC  
PIN ASSIGNMENT  
1
2
3
4
5
IN B  
IN A  
GND  
OUT Y  
OUT Y  
V
CC  
Figure 1. Pinout (Top View)  
FUNCTION TABLE  
Inputs  
Output  
Y
A
B
L
L
L
H
L
H
H
H
L
IN A  
IN B  
&
OUT Y  
H
H
H
Figure 2. Logic Symbol  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 Rev. 20  
MC74VHC1G00/D  
MC74VHC1G00  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
CC  
DC Supply Voltage  
*0.5 to +7.0  
0.5 to +7.0  
V
IN  
DC Input Voltage  
V
V
OUT  
DC Output Voltage  
*0.5 to V +0.5  
V
CC  
I
DC Input Diode Current  
DC Output Diode Current  
DC Output Sink Current  
DC Supply Current per Supply Pin  
Storage Temperature Range  
20  
20  
mA  
mA  
mA  
mA  
°C  
IK  
I
OK  
I
12.5  
OUT  
I
25  
CC  
T
*65 to +150  
260  
STG  
T
T
Lead Temperature, 1 mm from Case for 10 Seconds  
Junction Temperature Under Bias  
Thermal Resistance  
°C  
L
+150  
°C  
J
q
SC705/SC88A (Note 1)  
TSOP5  
350  
230  
°C/W  
JA  
P
D
Power Dissipation in Still Air at 85°C  
SC705/SC88A  
TSOP5  
150  
200  
mW  
MSL  
Moisture Sensitivity  
Flammability Rating  
ESD Withstand Voltage  
Level 1  
F
Oxygen Index: 28 to 34  
UL 94 V0 @ 0.125 in  
R
V
ESD  
Human Body Model (Note 2)  
Machine Model (Note 3)  
Charged Device Model (Note 4)  
> 2000  
> 200  
N/A  
V
I
Latchup Performance  
Above V and Below GND at 125°C (Note 5)  
500  
mA  
LATCHUP  
CC  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.  
2. Tested to EIA/JESD22A114A.  
3. Tested to EIA/JESD22A115A.  
4. Tested to JESD22C101A.  
5. Tested to EIA/JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
Max  
5.5  
Unit  
V
V
CC  
DC Supply Voltage  
V
IN  
DC Input Voltage  
0.0  
5.5  
V
V
OUT  
DC Output Voltage  
0.0  
V
CC  
V
T
Operating Temperature Range  
Input Rise and Fall Time  
*55  
+125  
°C  
ns/V  
A
t , t  
r
V
CC  
V
CC  
= 3.3 V $ 0.3 V  
= 5.0 V $ 0.5 V  
0
0
100  
20  
f
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
FAILURE RATE OF PLASTIC = CERAMIC  
UNTIL INTERMETALLICS OCCUR  
Junction  
Temperature °C  
Time, Hours  
1,032,200  
419,300  
178,700  
79,600  
Time, Years  
117.8  
47.9  
80  
90  
100  
110  
120  
130  
140  
20.4  
1
9.4  
37,000  
4.2  
1
10  
100  
1000  
17,800  
2.0  
TIME, YEARS  
8,900  
1.0  
Figure 3. Failure Rate vs. Time Junction Temperature  
http://onsemi.com  
2
 
MC74VHC1G00  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 255C  
Typ  
T
v 855C  
*555C to 1255C  
A
V
CC  
Min  
Max  
Min  
Max  
Min  
Max  
(V)  
Symbol  
Parameter  
Test Conditions  
Unit  
V
IH  
Minimum HighLevel  
Input Voltage  
2.0  
3.0  
4.5  
5.5  
1.5  
2.1  
3.15  
3.85  
1.5  
2.1  
3.15  
3.85  
1.5  
2.1  
3.15  
3.85  
V
V
Maximum LowLevel  
2.0  
3.0  
4.5  
5.5  
0.5  
0.9  
1.35  
1.65  
0.5  
0.9  
1.35  
1.65  
0.5  
0.9  
1.35  
1.65  
V
V
IL  
Input Voltage  
V
OH  
Minimum HighLevel  
V
IN  
= V or V  
IL  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
2.0  
3.0  
4.5  
1.9  
2.9  
4.4  
1.9  
2.9  
4.4  
IH  
Output Voltage  
I
= 50 mA  
OH  
V
IN  
= V or V  
IH IL  
V
IN  
= V or V  
IH  
IL  
I
= 4 mA  
3.0  
4.5  
2.58  
3.94  
2.48  
3.80  
2.34  
3.66  
OH  
I
= 8 mA  
OH  
V
OL  
Maximum LowLevel  
V
IN  
= V or V  
2.0  
3.0  
4.5  
0.0  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IH  
IL  
Output Voltage  
I
= 50 mA  
OL  
V
IN  
= V or V  
IH IL  
V
IN  
= V or V  
IH  
IL  
I
= 4 mA  
= 8 mA  
3.0  
4.5  
0.36  
0.36  
0.44  
0.44  
0.52  
0.52  
OL  
I
OL  
I
Maximum Input  
Leakage Current  
V
= 5.5 V or GND  
0 to  
5.5  
0.1  
1.0  
1.0  
mA  
mA  
IN  
IN  
I
Maximum Quiescent  
Supply Current  
V
IN  
= V or GND  
5.5  
1.0  
10  
40  
CC  
CC  
AC ELECTRICAL CHARACTERISTICS Input t = t = 3.0 ns  
r
f
T
A
= 255C  
Typ  
T
v 855C  
*555C to 1255C  
A
Min  
Max  
Min  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
= 3.3 $ 0.3 V C = 15 pF  
Unit  
t
,
Maximum Propagation  
Delay, Input A or B to Y  
V
CC  
4.5  
5.6  
7.9  
11.4  
9.5  
13.0  
11.0  
15.5  
ns  
PLH  
L
t
C = 50 pF  
PHL  
L
V
CC  
= 5.0 $ 0.5 V C = 15 pF  
3.0  
3.8  
5.5  
7.5  
6.5  
8.5  
8.0  
10.0  
L
C = 50 pF  
L
C
Maximum Input  
Capacitance  
5.5  
10  
10  
10  
pF  
pF  
IN  
Typical @ 25°C, V = 5.0 V  
CC  
10  
C
PD  
Power Dissipation Capacitance (Note 6)  
6. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
) = C V f + I . C is used to determine the noload dynamic  
CC(OPR  
PD CC in CC PD  
2
power consumption; P = C V  
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
http://onsemi.com  
3
 
MC74VHC1G00  
V
CC  
A or B  
50%  
GND  
t
t
PHL  
PLH  
Y
50% V  
CC  
Figure 4. Switching Waveforms  
V
CC  
OUTPUT  
INPUT  
C
L*  
*Includes all probe and jig capacitance.  
A 1MHz square input wave is recommended  
for propagation delay tests.  
Figure 5. Test Circuit  
ORDERING INFORMATION  
Device  
MC74VHC1G00DFT1G  
MC74VHC1G00DFT2G  
MC74VHC1G00DTT1G  
NLVVHC1G00DTT1G*  
Package  
Shipping  
SC705/SC88A/SOT353  
(PbFree)  
3000 / Tape & Reel  
SOT235/TSOP5/SC595  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ100 Qualified and PPAP  
Capable.  
http://onsemi.com  
4
MC74VHC1G00  
PACKAGE DIMENSIONS  
SC88A (SC705/SOT353)  
CASE 419A02  
ISSUE L  
A
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
G
2. CONTROLLING DIMENSION: INCH.  
3. 419A01 OBSOLETE. NEW STANDARD  
419A02.  
4. DIMENSIONS A AND B DO NOT INCLUDE  
MOLD FLASH, PROTRUSIONS, OR GATE  
BURRS.  
5
4
3
B−  
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
1.80  
1.15  
0.80  
0.10  
MAX  
2.20  
1.35  
1.10  
0.30  
1
2
A
B
C
D
G
H
J
0.071  
0.045  
0.031  
0.004  
0.087  
0.053  
0.043  
0.012  
0.026 BSC  
0.65 BSC  
M
M
B
D 5 PL  
0.2 (0.008)  
---  
0.004  
0.004  
0.004  
0.010  
0.012  
---  
0.10  
0.10  
0.10  
0.25  
0.30  
K
N
S
N
0.008 REF  
0.20 REF  
0.079  
0.087  
2.00  
2.20  
J
C
SOLDER FOOTPRINT  
0.50  
0.0197  
K
H
0.65  
0.025  
0.65  
0.025  
0.40  
0.0157  
1.9  
0.0748  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
http://onsemi.com  
5
MC74VHC1G00  
PACKAGE DIMENSIONS  
TSOP5  
CASE 48302  
ISSUE K  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME  
Y14.5M, 1994.  
NOTE 5  
5X  
D
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE  
MINIMUM THICKNESS OF BASE MATERIAL.  
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD  
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT  
EXCEED 0.15 PER SIDE. DIMENSION A.  
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL  
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.  
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2  
FROM BODY.  
0.20 C A B  
2X  
0.10  
T
M
5
4
3
2X  
0.20  
T
B
S
1
2
K
B
A
DETAIL Z  
G
A
MILLIMETERS  
TOP VIEW  
DIM  
A
B
MIN  
3.00 BSC  
1.50 BSC  
MAX  
DETAIL Z  
C
D
0.90  
0.25  
1.10  
0.50  
J
G
H
J
K
M
S
0.95 BSC  
C
0.01  
0.10  
0.20  
0
0.10  
0.26  
0.60  
10  
3.00  
0.05  
H
SEATING  
PLANE  
END VIEW  
C
_
_
SIDE VIEW  
2.50  
SOLDERING FOOTPRINT*  
1.9  
0.074  
0.95  
0.037  
2.4  
0.094  
1.0  
0.039  
0.7  
0.028  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
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MC74VHC1G00/D  

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