MC33762DM-2525RG [ONSEMI]
LDO 稳压器，80 mA，1 V，双输出，高 PSRR，低噪声，带开关控制;
| 型号： | MC33762DM-2525RG |
| 厂家： | 
ONSEMI |
| 描述： | LDO 稳压器，80 mA，1 V，双输出，高 PSRR，低噪声，带开关控制 开关 稳压器 |
| 文件： | 总11页 (文件大小：520K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MC33762
Voltage Regulator - Dual,
Ultra Low-Noise, Low
Dropout, ON/OFF Control
1.0 V
http://onsemi.com
The MC33762 is a dual Low DropOut (LDO) regulator featuring
excellent noise performances. Thanks to its innovative design, the
circuit reaches an impressive 40 mVRMS noise level without an
external bypass capacitor. Housed in a small m8 package, it represents
the ideal designer’s choice when space and noise are at premium.
The absence of external bandgap capacitor accelerates the response
time to a wake−up signal and keeps it within 40 ms, making the
MC33762 as a natural candidate for portable applications.
The MC33762 also hosts a novel architecture which prevents
excessive undershoots in the presence of fast transient bursts, as in any
bursting systems.
8
1
Micro8t
DM SUFFIX
CASE 846A
Finally, with a static line regulation better than −75 dB, it naturally
shields the downstream electronics from choppy lines.
PIN CONFIGURATION AND
MARKING DIAGRAM
Features
1
8
• Nominal Output Current of 80 mA with a 100 mA Peak Capability
• Ultra−Low Noise: 150 nV/√Hz @ 100 Hz, 40 mVRMS
V
GND1
En1
out1
CC1
out2
V
V
V
GND2
En2
100 Hz−100 kHz Typical, I = 60 mA, Co = 1.0 mF
out
CC2
• Fast Response Time from OFF to ON: 40 ms Typical
• Ready for 1.0 V Platforms: ON with a 900 mV High Level
• Typical Dropout of 90 mV @ 30 mA, 160 mV @ 80 mA
• Ripple Rejection: 70 dB @ 1.0 kHz
(Top View)
xxxx = Device Code
See Table − Page 4
= Assembly Location
A
Y
W
G
= Year
= Work Week
• 1.5% Output Precision @ 25°C
• Thermal Shutdown
= Pb−Free Package
(Note: Microdot may be in either location)
• V Available at 2.5 V, 2.8 V, and 3.0 V
out
• Separate Dice for Each Regulator Provides Maximum Isolation
Between Regulators
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
• Operating Range from −40 to +85°C
• Pb−Free Packages are Available
Applications
• Noise Sensitive Circuits: VCOs RF Stages, etc.
• Bursting Systems (TDMA Phones)
• All Battery Operated Devices
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
October, 2019 − Rev. 6
MC33762/D
MC33762
V
CC1
7
EN1
On/Off
Thermal
Shutdown
2
Band Gap
Reference
V
out
8
5
*Current Limit
*Antisaturation Protection
*Load Transient Improvement
1
4
GND1
EN2
V
CC2
On/Off
Thermal
Shutdown
Band Gap
Reference
V
out
6
*Current Limit
*Antisaturation Protection
*Load Transient Improvement
3
GND2
Figure 1. Simplified Block Diagram
PIN FUNCTION DESCRIPTIONS
Pin #
Pin Name
GND1
En1
Function
Description
1
2
3
4
5
6
7
8
Ground of the 1st LDO
Enables the 1st LDO
Ground of the 2nd LDO
Enables the 2nd LDO
A 900 mV level on this pin is sufficient to start this LDO. A 150 mV shuts it down.
GND2
En2
A 900 mV level on this pin is sufficient to start this LDO. A 150 mV shuts it down.
This pin brings the power to the 1st LDO and requires adequate decoupling.
This pin requires a 1.0 mF output capacitor to be stable.
V
cc2
2nd LDO V pin
cc
V
out2
Shuts or wakes−up the IC
V
cc1
1st LDO V pin
This pin brings the power to the 1st LDO and requires adequate decoupling.
This pin requires a 1.0 mF output capacitor to be stable.
cc
V
out1
Delivers the output voltage
MAXIMUM RATINGS
Value
Rating
Pin #
Symbol
Min
Max
Unit
Power Supply Voltage
1
V
in
−
12
V
ESD Capability, HBM Model
All Pins
All Pins
−
−
−
−
−
1.0
200
kV
V
ESD Capability, Machine Model
−
Maximum Power Dissipation
NW Suffix, Plastic Package
P
D
Internally Limited
W
Thermal Resistance Junction−to−Air
−
R
−
240
°C/W
q
J−A
Operating Ambient Temperature
−
−
−
T
Jmax
T
−
−
−
−40 to +85
150
°C
°C
°C
A
Maximum Junction Temperature (Note 1)
Maximum Operating Junction Temperature (Note 2)
T
125
J
Storage Temperature Range
−
T
stg
−
−60 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Internally limited by shutdown.
2. Specifications are guaranteed below this value.
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2
MC33762
ELECTRICAL CHARACTERISTICS
(For typical values T = 25°C, for min/max values T = −40°C to +85°C, max T = 125°C unless otherwise noted)
A
A
J
Characteristics
Pin # Symbol
Min
Typ
Max
Unit
LOGIC CONTROL SPECIFICATIONS
Input Voltage Range
2−4
2−4
2−4
V
R
V
0
−
V
V
ON/OFF
ON/OFF
ON/OFF
in
ON/OFF Input Resistance (all versions)
ON/OFF Control Voltages (Note 3)
−
250
−
kW
mV
Logic Zero, OFF State, I = 50 mA
−
900
−
−
150
−
O
Logic One, ON State, I = 50 mA
O
CURRENTS PARAMETERS
Current Consumption in OFF State (all versions)
−
−
−
−
IQ
−
−
0.1
180
800
180
2.0
−
mA
mA
mA
mA
OFF
OFF Mode Current: V = V + 1.0 V, I = 0, V = 150 mV
in
out
O
OFF
Current Consumption in ON State (all versions)
ON Mode Current: V = V + 1.0 V, I = 0, V = 3.5 V
IQ
ON
SAT
in
out
O
ON
Current Consumption in ON State (all versions), ON Mode
IQ
−
−
Saturation Current: V = V − 0.5 V, No Output Load
in
out
Current Limit V = Vout
+ 1.0 V,
nom
I
100
−
in
nom
MAX
Output is brought to Vout
− 0.3 V (all versions)
OUTPUT VOLTAGES
V
+ 1.0 V < V < 6.0 V, T = 25°C, 1.0 mA < I < 80 mA
2.5 V
2.8 V
3.0 V
3.3 V
3.6 V
5−7
5−7
5−7
5−7
5−7
5−7
5−7
5−7
5−7
5−7
5−7
5−7
V
out
2.462
2.758
2.955
3.250
3.546
−1.5
2.5
2.8
3.0
3.3
3.6
X
2.537
2.842
3.045
3.349
3.654
+1.5
V
V
V
V
V
%
V
V
V
V
V
%
out
in
A
out
V
out
V
out
V
out
V
out
Other Voltages up to 5.0 V Available in 50 mV Increment Steps
+ 1.0 V < V < 6.0 V, T = −40°C to +85°C, 1.0 mA < I < 80 mA
V
out
V
out
2.5 V
2.8 V
3.0 V
3.3 V
3.6 V
V
out
2.425
2.716
2.91
2.5
2.8
3.0
3.3
3.6
X
2.575
2.884
3.090
3.399
3.708
+3.0
in
A
out
V
out
V
out
V
out
3.201
3.492
−3.0
V
out
Other Voltages up to 5.0 V Available in 50 mV Increment Steps
V
out
LINE AND LOAD REGULATION, DROPOUT VOLTAGES
Line Regulation (all versions)
V
+ 1.0 V < V < 12 V, I = 80 mA
5−7
5−7
Reg
−
−
−
−
20
40
mV
mV
mV
out
in
out
line
Load Regulation (all versions)V = V + 1.0 V, C = 1.0 mF, I = 1.0 to 80 mA
Reg
in
out
out
out
load
Dropout Voltage (all versions) (Note 3)
I
I
I
= 30 mA
= 60 mA
= 80 mA
5−7
5−7
5−7
V −V
−
−
−
90
140
160
150
200
250
out
out
out
in out
V −V
in out
V −V
in out
DYNAMIC PARAMETERS
Ripple Rejection (all versions)
5−7
Ripple
−
−70
−
dB
V
= V + 1.0 V + 1.0 kHz 100 mVpp Sinusoidal Signal
in
out
Output Noise Density @ 1.0 kHz
5−7
5−7
−
−
−
150
35
−
−
nV/√Hz
mV
RMS Output Noise Voltage (all versions)
Noise
C
= 1.0 mF, I = 50 mA, F = 100 Hz to 1.0 MHz
out
out
Output Rise Time (all versions) C = 1.0 mF, I = 50 mA,
5−7
t
−
−
40
−
ms
°C
out
out
rise
10% of Rising ON Signal to 90% of Nominal V
out
THERMAL SHUTDOWN
Thermal Shutdown (all versions)
−
−
−
125
3. Voltage slope should be greater than 2.0 mV/ms
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3
MC33762
ORDERING INFORMATION
Device
†
Marking
Voltage Output
Package
Shipping
MC33762DM−2525R2
MC33762DM−2525R2G
Micro8
2525
2.5 V
2.8 V
3.0 V
Micro8
(Pb−Free)
MC33762DM−2828R2
MC33762DM−2828R2G
Micro8
4000 Units / Tape & Reel
2528
3030
Micro8
(Pb−Free)
MC33762DM−3030R2
MC33762DM−3030R2G
Micro8
Micro8
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DEFINITIONS
Load Regulation
Line Regulation
The change in output voltage for a change in output
current at a constant chip temperature.
The change in output voltage for a change in input voltage.
The measurement is made under conditions of low
dissipation or by using pulse technique such that the average
chip temperature is not significantly affected. One usually
distinguishes static line regulation or DC line regulation (a
DC step in the input voltage generates a corresponding step
in the output voltage) from ripple rejection or audio
susceptibility where the input is combined with a frequency
generator to sweep from a few hertz up to a defined
boundary while the output amplitude is monitored.
Dropout Voltage
The input/output differential at which the regulator output
no longer maintains regulation against further reductions in
input voltage. Measured when the output drops 100 mV
below its nominal value (which is measured at 1.0 V
differential value). The dropout level is affected by the chip
temperature, load current and minimum input supply
requirements.
Thermal Protection
Output Noise Voltage
Internal thermal shutdown circuitry is provided to protect
the integrated circuit in the event that the maximum junction
temperature is exceeded. When activated at typically 125°C,
the regulator turns off. This feature is provided to prevent
catastrophic failures from accidental overheating.
This is the integrated value of the output noise over a
specified frequency range. Input voltage and output current
are kept constant during the measurement. Results are
expressed in mVRMS.
Maximum Power Dissipation
The maximum total dissipation for which the regulator
will operate within its specs.
Maximum Package Power Dissipation
The maximum power package power dissipation is the
power dissipation level at which the junction temperature
reaches its maximum operating value, i.e. 125°C.
Depending on the ambient temperature, it is possible to
calculate the maximum power dissipation and thus the
maximum available output current.
Quiescent Current
The quiescent current is the current which flows through
the ground when the LDO operates without a load on its
output: internal IC operation, bias etc. When the LDO
becomes loaded, this term is called the Ground current. It is
actually the difference between the input current (measured
through the LDO input pin) and the output current.
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4
MC33762
Characterization Curves
Curves are Common to Both Regulators
4.5
4.0
185
−40°C
25°C
3.5
3.0
2.5
2.0
1.5
1.0
85°C
180
175
170
165
0.5
0
0
20
40
60
80
100
−60 −40
−20
0
20
40
60
80
100
OUTPUT CURRENT (mA)
AMBIENT TEMPERATURE (°C)
Figure 2. Ground Current versus
Output Current
Figure 3. Quiescent Current versus
Temperature
200
150
100
2.805
2.800
2.795
2.790
2.785
85°C
85°C
25°C
40°C
−40°C
25°C
0°C
50
0
−20°C
−40°C
2.780
2.775
0
20
40
60
80
100
0
20
40
60
80
100
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 4. Dropout versus Output Current
Figure 5. Output Voltage versus
Output Current
180
160
140
80 mA
60 mA
120
100
80
30 mA
60
40
20
0
1.0 mA
60
−60 −40
−20
0
20
40
80
100
TEMPERATURE (°C)
Figure 6. Dropout versus Temperature
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5
MC33762
APPLICATION HINTS
Protections
Input Decoupling
As with any regulator, it is necessary to reduce the
dynamic impedance of the supply rail that feeds the
component. A 1.0 mF capacitor either ceramic or tantalum is
recommended and should be connected close to the
MC33762 package. Higher values will correspondingly
improve the overall line transient response.
The MC33762 hosts several protections, giving natural
ruggedness and reliability to the products implementing the
component. The output current is internally limited to a
maximum value of 180 mA typical while temperature
shutdown occurs if the die heats up beyond 125°C. These
values let you assess the maximum differential voltage the
device can sustain at a given output current before its
protections come into play.
Output Decoupling
Thanks to a novel concept, the MC33762 is a stable
component and does not require any specific Equivalent
Series Resistance (ESR) neither a minimum output current.
Capacitors exhibiting ESRs ranging from a few mW up to
3.0 W can thus safely be used. The minimum decoupling
value is 1.0 mF and can be augmented to fulfill stringent load
transient requirements. The regulator accepts ceramic chip
capacitors as well as tantalum devices.
The maximum dissipation the package can handle is given
by:
T
* T
Jmax
R
A
P
+
max
qJA
If T
is limited to 125°C, then the MC33762 can
Jmax
dissipate up to 395 mW @ 25°C. The power dissipated by
the MC33762 can be calculated from the following formula:
Noise Performances
) ) ǒV
Ǔ
Ptot + ǒVin
out Ǔ
I
(I
gnd
* V
I
out
out
in
Unlike other LDOs, the MC33762 is a true low−noise
regulator. Without the need of an external bypass capacitor,
it typically reaches the incredible level of 40 mVRMS overall
noise between 100 Hz and 100 kHz. To give maximum
insight on noise specifications, ON Semiconductor includes
spectral density graphics. The classical bypass capacitor
impacts the startup phase of standard LDOs. However,
thanks to its low−noise architecture, the MC33762 operates
without a bypass element and thus offers a typical 40 ms
startup phase.
or
Ptot ) V
I
out
out
Vin
+
max
I
) I
out
gnd
If a 80 mA output current is needed, the ground current is
extracted from the data−sheet curves: 4.0 mA @ 80 mA. For
a half 2.8 V MC33762 (2.8 V) operating at 25°C, the
maximum input voltage will then be 7.3 V.
Typical Applications
The following picture portrays the typical application of
the MC33762.
Input
8
7
6
5
1
2
3
4
Output 1
Output 2
MC33762
+
C3
+
C1
+
C2
Regulator 1
1.0 mF
Regulator 2
On/Off
1.0 mF 1.0 mF
R1
On/Off
R2
100 k
100 k
Figure 7. A Typical Application Schematic
As for any low noise designs, particular care has to be
taken when tackling Printed Circuit Board (PCB) layout.
Connections shall be kept short and wide. Layout example
as given in the MC33761 application hints can be used as a
starting basis.
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6
MC33762
Understanding the Load Transient Improvement
The MC33762 features a novel architecture which allows
During this decreasing phase, the LDO stops the PNP bias
and one can consider the LDO asleep (Figure 8). If by
misfortune a current shot appears, the reaction time is
incredibly lengthened and a strong undershoot takes place.
This reaction is clearly not acceptable for line sensitive
devices, such as VCOs or other Radio−Frequency parts.
This problem is dramatically exacerbated when the output
current drops to zero rather than a few mA. In this later case,
the internal feedback network is the only discharge path,
accordingly lengthening the output voltage decay period
(Figure 9).
The MC33762 cures this problem by implementing a
clever design where the LDO detects the presence of the
overshoot and forces the system to go back to steady−state
as soon as possible, ready for the next shot. Figure 10 and 11
show how it positively improves the response time and
decreases the negative peak voltage.
the user to easily implement the regulator in burst systems
where the time between two current shots is kept very small.
The quality of the transient response time is related to
many parameters, among which the closed−loop bandwidth
with the corresponding phase margin plays an important
role. However, other characteristics also come into play like
the series pass transistor saturation. When a current
perturbation suddenly appears on the output, e.g. a load
increase, the error amplifier reacts and actively biases the
PNP transistor. During this reaction time, the LDO is in
open−loop and the output impedance is rather high. As a
result, the voltage brutally drops until the error amplifier
effectively closes the loop and corrects the output error.
When the load disappears, the opposite phenomenon takes
place with a positive overshoot. The problem appears when
this overshoot decays down to the LDO steady−state value.
Figure 8. A Standard LDO Behavior when the Load
Current Disappears
Figure 9. A Standard LDO Behavior when the Load
Current Appears in the Decay Zone
Figure 10. Without Load Transient Improvement
Figure 11. MC33762 with Load Transient Improvement
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7
MC33762
MC33762 Has a Fast Startup Phase
Thanks to the lack of bypass capacitor the MC33762 is
unacceptable level. MC33762 offers the best of both worlds
since it no longer includes a bypass capacitor and starts in
less than 40 ms typically (Repetitive at 200 Hz). It also
ensures an incredible low−noise level of 40 mVRMS
100 Hz−100 kHz. The following picture details the typical
33762 startup phase.
able to supply its downstream circuitry as soon as the OFF
to ON signal appears. In a standard LDO, the charging time
of the external bypass capacitor hampers the response time.
A simple solution consists in suppressing this bypass
element but, unfortunately, the noise rises to an
Figure 12. Repetitive Startup Waveforms
TYPICAL TRANSIENT RESPONSES
Figure 13. Output is Pulsed from 2.0 mA to 80 mA
Figure 14. Discharge Effects from 0 to 40 mA
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8
MC33762
TYPICAL TRANSIENT RESPONSES
Figure 15. Load Transient Improvement Effect
Figure 16. Load Transient Improvement Effect
250
200
150
100
0
V
= V + 1.0 V
out
RMS Noise, I = 50 mA:
20 Hz − 100 kHz: 27 mV
20 Hz − 1.0 MHz: 30 mV
in
O
−10
T = 25°C
A
C
= 1.0 mF
−20
−30
−40
−50
−60
−70
−80
out
I
O
= 50 mA
10 mA
I
O
= 50 mA
10 mA
RMS Noise, I = 10 mA:
20 Hz − 100 kHz: 29 mV
20 Hz − 1.0 MHz: 31 mV
O
V
in
= V + 1.0 V
O
50
0
T = 25°C
A
−90
C
= 1.0 mF
out
−100
100
1,000
10,000
100,000 1,000,000
100
1,000
10,000
100,000
1,000,000
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 17. MC33762 Typical Noise Density Performance
Figure 18. MC33762 Typical Ripple Rejection
Performance
3.5
I
= 1.0 mA
3.0
2.5
2.0
1.5
1.0
O
10 mA
80 mA
0.5
0
20 mA
100
1,000
10,000
100,000 1,000,000
f, FREQUENCY (Hz)
Figure 19. Output Impedance Plot
C
out = 1.0 mF, Vin = Vout + 1.0 V
Micro8 is a trademark of International Rectifier.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
Micro8
CASE 846A−02
ISSUE K
DATE 16 JUL 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
8
XXXX
AYWG
G
1
XXXX = Specific Device Code
A
Y
W
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
STYLE 1:
STYLE 2:
PIN 1. SOURCE 1
STYLE 3:
PIN 1. SOURCE
PIN 1. N-SOURCE
2. N-GATE
(Note: Microdot may be in either location)
2. SOURCE
3. SOURCE
4. GATE
2. GATE 1
3. SOURCE 2
4. GATE 2
3. P-SOURCE
4. P-GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
5. P-DRAIN
6. P-DRAIN
7. N-DRAIN
8. N-DRAIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB14087C
MICRO8
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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