MC33102 [ONSEMI]
DUAL SLEEP-MODE OPERATIONAL AMPLIFIER; 双休眠模式运算放大器
| 型号： | MC33102 |
| 厂家： | 
ONSEMI |
| 描述： | DUAL SLEEP-MODE OPERATIONAL AMPLIFIER |
| 文件： | 总14页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document by MC33102/D
The MC33102 dual operational amplifier is an innovative design concept
employing Sleep–Mode technology. Sleep–Mode amplifiers have two
separate states, a sleepmode and an awakemode. In sleepmode, the
amplifier is active and waiting for an input signal. When a signal is applied
causing the amplifier to source or sink 160 µA (typically) to the load, it will
automatically switch to the awakemode which offers higher slew rate, gain
bandwidth, and drive capability.
DUAL SLEEP–MODE
OPERATIONAL AMPLIFIER
SEMICONDUCTOR
TECHNICAL DATA
• Two States: “Sleepmode” (Micropower) and “Awakemode”
(High Performance)
• Switches from Sleepmode to Awakemode in 4.0 µs when Output Current
Exceeds the Threshold Current (R = 600 Ω)
L
• Independent Sleepmode Function for Each Op Amp
• Standard Pinouts – No Additional Pins or Components Required
D SUFFIX
PLASTIC PACKAGE
8
CASE 751
(SO–8)
• Sleepmode State – Can Be Used in the Low Current Idle State as a
1
Fully Functional Micropower Amplifier
• Automatic Return to Sleepmode when Output Current Drops Below
Threshold
• No Deadband/Crossover Distortion; as Low as 1.0 Hz in the Awakemode
• Drop–in Replacement for Many Other Dual Op Amps
P SUFFIX
• ESD Clamps on Inputs Increase Reliability without Affecting Device
PLASTIC PACKAGE
8
CASE 626
Operation
1
Sleep–Mode is a trademark of Motorola, Inc.
TYPICAL SLEEPMODE/AWAKEMODE PERFORMANCE
Sleepmode Awakemode
Characteristic
(Typical)
(Typical)
750
0.15
50
Unit
µA
Low Current Drain
45
Low Input Offset Voltage
High Output Current Capability
Low T.C. of Input Offset Voltage
High Gain Bandwidth (@ 20 kHz)
High Slew Rate
0.15
0.15
1.0
mV
PIN CONNECTIONS
mA
1.0
µV/°C
MHz
V/µs
Output 1
Inputs 1
1
2
3
4
8
7
6
5
V
CC
0.33
0.16
28
4.6
Output 2
1.7
1
Low Noise (@ 1.0 kHz)
9.0
nV/√Hz
2
Inputs
2
V
EE
MAXIMUM RATINGS
Ratings
Symbol
Value
+36
Unit
V
(Dual, Top View)
Supply Voltage (V
to V
)
V
S
CC
EE
Input Differential Voltage Range
Input Voltage Range
V
V
(Note 1)
V
IDR
IR
Output Short Circuit Duration (Note 2)
t
(Note 2)
sec
SC
Maximum Junction Temperature
Storage Temperature
T
T
stg
+150
–65 to +150
°C
ORDERING INFORMATION
Operating
J
Temperature Range
Device
Package
Maximum Power Dissipation
P
D
(Note 2)
mW
NOTES: 1. Either or both input voltages should not exceed V
or V
.
MC33102D
MC33102P
SO–8
CC
EE
T
A
= – 40° to +85°C
2. Power dissipation must be considered to ensure maximum junction temperature (T )
is not exceeded (refer to Figure 1).
J
Plastic DIP
Motorola, Inc. 1996
Rev 0
MC33102
Simplified Block Diagram
Current
Threshold
Detector
Awake to
Sleepmode
Delay Circuit
Fractional
Load Current
Detector
I
% of I
Hysteresis
L
Buffer
Buffer
I
Enable
C
Storage
I
ref
I
L
V
Op Amp
in
V
out
R
L
I
Bias
Enable
Sleepmode
Current
Awakemode
Current
I
sleep
Regulator
Regulator
I
awake
DC ELECTRICAL CHARACTERISTICS (V
= +15 V, V
= –15 V, T = 25°C, unless otherwise noted.)
EE A
CC
Characteristics
Figure
Symbol
Min
Typ
Max
Unit
Input Offset Voltage (R = 50 Ω, V
Sleepmode
= 0 V, V = 0 V)
2
V
IO
mV
S
CM
O
T
= +25°C
= –40° to +85°C
—
—
0.15
—
2.0
3.0
A
T
A
Awakemode
T
T
A
= +25°C
= –40° to +85°C
—
—
0.15
—
2.0
3.0
A
Input Offset Voltage Temperature Coefficient
(R = 50 Ω, V = 0 V, V = 0 V)
3
∆V /∆T
IO
µV/°C
S
CM
O
T
= –40° to +85°C (Sleepmode and Awakemode)
—
1.0
—
A
Input Bias Current (V
Sleepmode
= 0 V, V = 0 V)
4, 6
I
IB
nA
CM
O
T
= +25°C
= –40° to +85°C
—
—
8.0
—
50
60
A
T
A
Awakemode
T
T
A
= +25°C
= –40° to +85°C
—
—
100
—
500
600
A
Input Offset Current (V
Sleepmode
= 0 V, V = 0 V)
—
I
IO
nA
CM
O
T
= +25°C
= –40° to +85°C
—
—
0.5
—
5.0
6.0
A
T
A
Awakemode
T
T
A
= +25°C
= –40° to +85°C
—
—
5.0
—
50
60
A
2
MOTOROLA ANALOG IC DEVICE DATA
MC33102
DC ELECTRICAL CHARACTERISTICS (V
Characteristics
= +15 V, V
= –15 V, T = 25°C, unless otherwise noted.)
EE A
CC
Figure
Symbol
Min
Typ
Max
Unit
Common Mode Input Voltage Range
5
7
V
V
ICR
(∆V = 5.0 mV, V = 0 V)
IO
O
Sleepmode and Awakemode
–13
—
–14.8
+14.2
—
+13
Large Signal Voltage Gain
Sleepmode (RL = 1.0 MΩ)
A
VOL
kV/V
T
= +25°C
= –40° to +85°C
25
15
200
—
—
—
A
T
A
Awakemode (V = ±10 V, R = 600 Ω)
O
L
T
= +25°C
= –40° to +85°C
50
25
700
—
—
—
A
T
A
Output Voltage Swing (V = ±1.0 V)
ID
8, 9, 10
V
V
Sleepmode (V
= +15 V, V
= –15 V)
EE
CC
= 1.0 MΩ
= 1.0 MΩ
R
R
V
V
+13.5
—
+14.2
–14.2
—
–13.5
L
L
O+
O–
Awakemode (V
= +15 V, V
= –15 V)
CC
CC
EE
R
L
R
L
R
L
R
L
= 600 Ω
= 600 Ω
= 2.0 kΩ
= 2.0 kΩ
V
O+
V
O–
V
O+
V
O–
+12.5
—
+13.3
—
+13.6
–13.6
+14
—
–12.5
—
–14
–13.3
Awakemode (V
= +2.5 V, V
EE
= –2.5 V)
R
L
R
L
= 600 Ω
= 600 Ω
V
V
+1.1
—
+1.6
–1.6
—
–1.1
O +
O–
Common Mode Rejection (V
= ±13 V)
11
12
CMR
PSR
dB
dB
CM
Sleepmode and Awakemode
80
80
90
—
—
Power Supply Rejection (V /V
= +15 V/–15 V,
CC EE
5.0 V/–15 V, +15 V/–5.0 V)
Sleepmode and Awakemode
100
Output Transition Current
13, 14
µA
Sleepmode to Awakemode (Source/Sink)
(V = ±15 V)
I
I
TH1
200
250
160
200
—
—
S
(V = ±2.5 V)
S
Awakemode to Sleepmode (Source/Sink)
TH2
(V = ±15 V)
—
—
142
180
90
140
S
(V = ±2.5 V)
S
Output Short Circuit Current (Awakemode)
15, 16
17
I
mA
SC
(V = ±1.0 V, Output to Ground)
ID
Source
Sink
50
50
110
110
—
—
Power Supply Current (per Amplifier) (A
= 1, V = 0V)
I
D
µA
CL
O
Sleepmode (V = ±15 V)
S
T
T
A
= +25°C
—
—
45
48
65
70
A
= –40° to +85°C
Sleepmode (V = ±2.5 V)
S
T
= +25°C
—
—
38
42
65
—
A
T
= –40° to +85°C
A
Awakemode (V = ±15 V)
S
T
= +25°C
—
—
750
800
800
900
A
T
= –40° to +85°C
A
3
MOTOROLA ANALOG IC DEVICE DATA
MC33102
AC ELECTRICAL CHARACTERISTICS (V
= +15 V, V
= –15 V, T = 25°C, unless otherwise noted.)
EE A
CC
Characteristics
Figure
Symbol
Min
Typ
Max
Unit
Slew Rate (V = –5.0 V to +5.0 V, C = 50 pF, A = 1.0)
in
18
SR
V/µs
L
V
Sleepmode (R = 1.0 MΩ)
0.10
1.0
0.16
1.7
—
—
L
Awakemode (R = 600 Ω)
L
Gain Bandwidth Product
Sleepmode (f = 10 kHz)
Awakemode (f = 20 kHz)
19
GBW
MHz
0.25
3.5
0.33
4.6
—
—
Sleepmode to Awakemode Transition Time
20, 21
t
µs
tr1
(A
R
R
= 0.1, V = 0 V to +5.0 V)
= 600 Ω
= 10 kΩ
CL
in
—
—
4.0
15
—
—
L
L
Awakemode to Sleepmode Transition Time
22
t
—
1.5
—
sec
tr2
Unity Gain Frequency (Open Loop)
f
U
kHz
Sleepmode (R = 100 kΩ, C = 0 pF)
—
—
200
2500
—
—
L
L
Awakemode (R = 600 Ω, C = 0 pF)
L
L
Gain Margin
Sleepmode (R = 100 kΩ, C = 0 pF)
23, 25
24, 26
29
A
dB
M
—
—
13
12
—
—
L
L
Awakemode (R = 600 Ω, C = 0 pF)
L
L
Phase Margin
Sleepmode (R = 100 kΩ, C = 0 pF)
Degrees
M
—
—
60
60
—
—
L
L
Awakemode (R = 600 Ω, C = 0 pF)
L
L
Channel Separation (f = 100 Hz to 20 kHz)
Sleepmode and Awakemode
CS
dB
kHz
%
—
—
120
20
—
—
Power Bandwidth (Awakemode)
BW
P
(V = 10 V , R = 100 kΩ, THD ≤ 1%)
O
pp
L
Total Harmonic Distortion (V = 2.0 V , A = 1.0)
pp
30
31
THD
O
V
Awakemode (R = 600 Ω)
L
f = 1.0 kHz
f = 10 kHz
f = 20 kHz
—
—
—
0.005
0.016
0.031
—
—
—
DC Output Impedance (V = 0 V, A = 10, I = 10 µA)
R
R
C
e
i
Ω
O
V
Q
O
in
in
n
Sleepmode
Awakemode
—
—
1.0 k
96
—
—
Differential Input Resistance (V
Sleepmode
= 0 V)
MΩ
pF
CM
—
—
1.3
0.17
—
—
Awakemode
Differential Input Capacitance (V
Sleepmode
= 0 V)
CM
—
—
0.4
4.0
—
—
Awakemode
Equivalent Input Noise Voltage (f = 1.0 kHz, R = 100 Ω)
Sleepmode
Awakemode
32
33
nV/√Hz
pA/√Hz
S
—
—
28
9.0
—
—
Equivalent Input Noise Current (f = 1.0 kHz)
Sleepmode
Awakemode
n
—
—
0.01
0.05
—
—
4
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 1. Maximum Power Dissipation
versus Temperature
Figure 2. Distribution of Input Offset Voltage
(MC33102D Package)
2500
2000
50
40
Percent Sleepmode
Percent Awakemode
204 Amplifiers tested
from 3 wafer lots.
V
V
= +15 V
= –15 V
CC
EE
T
= 25
°C
MC33102P
MC33102D
A
30
20
1500
1000
500
10
0
0
–55 –40 –25
0
25
50
85
125
–1.0 –0.8 –0.6 –0.4 –0.2
0
0.2
0.4
0.6
0.8
1.0
T , AMBIENT TEMPERATURE (
°C)
V
, INPUT OFFSET VOLTAGE (mV)
A
IO
Figure 3. Input Offset Voltage Temperature
Coefficient Distribution (MC33102D Package)
Figure 4. Input Bias Current versus
Common Mode Input Voltage
10.5
9.5
8.5
7.5
6.5
100
35
30
25
20
15
10
5.0
0
204 Amplifiers tested
from 3 wafer lots.
Percent Sleepmode
Percent Awakemode
V
V
= +15 V
= –15 V
CC
EE
V
V
= +15 V
= –15 V
CC
EE
90
T
= 25
°C
A
T
= –40°C to 85
°C
A
Sleepmode
80
70
Awakemode
60
–5.0 –4.0 –3.0 –2.0 –1.0
0
1.0
2.0
3.0
4.0
5.0
–15
–10
–5.0
0
5.0
10
15
TCV , INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (
µV/°C)
V , COMMON MODE INPUT VOLTAGE (V)
CM
IO
Figure 5. Input Common Mode Voltage Range
versus Temperature
Figure 6. Input Bias Current versus Temperature
V
100
10.0
CC
Sleepmode
Awakemode
Sleepmode
V
V
–0.5
CC
80
60
8.0
Awakemode
–1.0
CC
6.0
4.0
2.0
40
20
V
V
+1.0
+0.5
V
V
∆
= +15 V
= –15 V
= 5.0 mV
EE
CC
EE
IO
V
V
V
= +15 V
= –15 V
= 0 V
CC
EE
CM
Awakemode
Sleepmode
85
V
EE
V
0
125
EE
0
–55 –40 –25
0
25
50
125
–55 –40 –25
0
25
50
85
T , AMBIENT TEMPERATURE (
°C)
T , AMBIENT TEMPERATURE (°C)
A
A
5
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 7. Open Loop Voltage Gain
versus Temperature
Figure 8. Output Voltage Swing
versus Supply Voltage
130
120
110
100
90
35
30
25
20
15
10
5
T
= 25°C
A
Sleepmode (R = 1.0 MΩ)
L
Awakemode (R = 1.0 MΩ)
L
Awakemode (R = 600
Ω)
Sleepmode (R = 1.0 M
Ω)
L
L
80
0
0
3.0
6.0
9.0
12
15
18
–55 –40 –25
0
25
50
85
125
T , AMBIENT TEMPERATURE (
°C)
V
, V
, SUPPLY VOLTAGE (V)
A
CC EE
Figure 10. Maximum Peak–to–Peak Output
Voltage Swing versus Load Resistance
Figure 9. Output Voltage versus Frequency
30
25
20
30
25
20
Sleepmode
(R = 1.0 M
Awakemode
Awakemode
Ω)
(R = 600 Ω)
15
10
L
L
15
V
V
= +15 V
= –15 V
CC
EE
V
V
= +15 V
= –15 V
CC
EE
10
A
= +1.0
V
A
f = 1.0 kHz
5.0
0
T
= 25°C
T
= 25°C
A
5.0
100
1.0 k
10 k
f, FREQUENCY (Hz)
100 k
500 k
10
100
1.0 k
10 k
R , LOAD RESISTANCE TO GROUND (
Ω)
L
Figure 11. Common Mode Rejection
versus Frequency
Figure 12. Power Supply Rejection
versus Frequency
100
80
120
+PSR
Sleepmode
100
80
+PSR
Awakemode
Awakemode
60
–PSR
Awakemode
60
Sleepmode
–PSR
Sleepmode
40
V
V
V
= +15 V
= –15 V
= 0 V
40
20
0
CC
EE
CM
V
V
∆
CC
EE
20
0
V
∆
V
=
°
±
C
1.5 V
CM
= 25
T
A
T
A
10
100
1.0 k
10 k
100 k
1.0 M
10
1.0 k
10 k
100 k
1.0 M
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
6
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 13. Sleepmode to Awakemode
Figure 14. Awakemode to Sleepmode
Current Threshold versus Supply Voltage
Current Threshold versus Supply Voltage
190
200
190
180
170
180
170
160
150
140
130
120
T
= 25°C
A
T
= 25°C
A
T
= –55°C
A
T
= –55°C
A
T
= 125
6.0
°C
A
160
150
140
T
= 125°C
A
3.0
6.0
9.0
12
15
18
3.0
9.0
12
15
18
V
,
V
, SUPPLY VOLTAGE (V)
V
, V
, SUPPLY VOLTAGE (V)
CC
EE
CC EE
Figure 15. Output Short Circuit Current
versus Output Voltage
Figure 16. Output Short Circuit Current
versus Temperature
120
100
80
60
40
20
0
150
V
V
V
= +15 V
= –15 V
Sink
CC
EE
ID
140
130
120
110
100
90
Source
Sink
=
< 10
±
1.0 V
Ω
Source
R
L
Awakemode
V
= +15 V
= –15 V
1.0 V
CC
EE
V
V
R
=
±
ID
< 10
Ω
L
80
Awakemode
70
0
3.0
6.0
9.0
12
15
–55 –40 –25
0
25
50
85
125
V
, OUTPUT VOLTAGE (V)
T , AMBIENT TEMPERATURE (°C)
O
A
Figure 17. Power Supply Current Per Amplifier
versus Temperature
Figure 18. Slew Rate versus Temperature
1.2
1.0
0.8
2.0
60
55
50
45
40
35
30
0.20
0.18
0.16
0.14
0.12
0.10
Awakemode (R = 600
Ω)
L
V
V
∆
= +15 V
= –15 V
= –5.0 V to +5.0 V
CC
EE
in
1.8
1.6
1.4
V
Awakemode (mA)
0.6
Sleepmode (µA)
0.4
0.2
0
V
V
= +15 V
= –15 V
CC
EE
1.2
1.0
Sleepmode (R = 1.0 MΩ)
No Load
L
–55 –40 –25
0
25
50
85
125
–55 –40 –25
0
25
50
85
C)
125
T , AMBIENT TEMPERATURE (
°
C)
T , AMBIENT TEMPERATURE (°
A
A
7
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 19. Gain Bandwidth Product
versus Temperature
Figure 20. Sleepmode to Awakemode
Transition Time
5.0
Awakemode (MHz)
4.5
4.0
3.5
R
= 10 k
L
350
300
250
200
Sleepmode (kHz)
V
V
= +15 V
= –15 V
CC
EE
f = 20 kHz
–55 –40 –25
0
25
50
85
C)
125
t, TIME (5.0 µs/DIV)
T , AMBIENT TEMPERATURE (
°
A
Figure 21. Sleepmode to Awakemode
Transition Time
Figure 22. Awakemode to Sleepmode
Transition Time versus Supply Voltage
2.0
1.5
1.0
R
= 600 Ω
L
T
= 25°C
A
T
= –55°C
A
0.5
0
T
= 125
15
°C
A
3.0
6.0
9.0
12
18
t, TIME (2.0 µs/DIV)
V
, V
EE
, SUPPLY VOLTAGE (V)
CC
Figure 23. Gain Margin versus Differential
Source Resistance
Figure 24. Phase Margin versus Differential
Source Resistance
15
13
70
60
50
40
30
20
Sleepmode
Sleepmode
Awakemode
V
V
R
= +15 V
= –15 V
= R1 + R2
= 0 V
CC
EE
T
11
V
O
T
= 25°C
A
Awakemode
9.0
V
V
R
= +15 V
= –15 V
= R1 + R2
= 0 V
CC
EE
T
R1
R2
7.0
5.0
R1
R2
V
O
10
0
V
V
O
O
T
= 25°C
A
10
100
1.0 k
10 k
10
100
1.0 k
10 k
100 k
R , DIFFERENTIAL SOURCE RESISTANCE (
Ω)
R , DIFFERENTIAL SOURCE RESISTANCE (Ω)
T
T
8
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 25. Open Loop Gain Margin versus
Output Load Capacitance
Figure 26. Phase Margin versus
Output Load Capacitance
14
12
10
70
V
V
V
= +15 V
= –15 V
= 0 V
CC
EE
O
60
50
40
30
20
10
0
Sleepmode
8.0
6.0
4.0
Awakemode
Awakemode
V
V
V
= +15 V
CC
= –15 V
EE
= 0 V
Sleepmode
O
2.0
0
10
100
C , OUTPUT LOAD CAPACITANCE (pF)
1.0 k
10
100
1.0 k
10 k
C , OUTPUT LOAD CAPACITANCE (pF)
L
L
Figure 27. Sleepmode Voltage Gain and Phase
versus Frequency
Figure 28. Awakemode Voltage Gain and
Phase versus Frequency
70
50
30
70
50
40
40
T
R
C
= 25°C
= 600 Ω
< 10 pF
1A) Phase, V
2A) Phase, V
=
=
±
±
±
18 V
2.5 V
18 V
2.5 V
A
L
L
S
S
1B) Gain, V
2B) Gain, V
=
80
S
S
80
Awakemode
=
±
1A
2A
1B
1A
120
160
200
30
10
120
160
2A
2B
10
1B
2B
T
R
C
= 25°C
= 1.0 MΩ
< 10 pF
1A) Phase, V
2A) Phase, V
=
=
±
±
±
18 V
2.5 V
18 V
2.5 V
A
L
L
S
–10
–30
200
240
–10
–30
S
1B) Gain, V
2B) Gain, V
=
S
S
Sleepmode
=
±
240
10 M
10 k
100 k
1.0 M
30 k
100 k
1.0 M
f, FREQUENCY (Hz)
10 M
f, FREQUENCY (Hz)
Figure 30. Total Harmonic Distortion
versus Frequency
Figure 29. Channel Separation versus Frequency
100
10
140
V
V
R
= +15 V
= –15 V
V
= 2.0 Vpp
O
CC
EE
L
T
= 25°C
120
100
80
A
= 600
Ω
Awakemode
A
= +1000
V
1.0
A
= +100
V
60
0.1
A
= +10
V
40
20
0
A
= +1.0
V
V
R
= +15 V
= –15 V
= 600 Ω
V
CC
EE
L
0.01
0.001
Awakemode
100
1.0 k
10 k
100 k
100
1.0 k
10 k
100 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
9
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 31. Awakemode Output Impedance
versus Frequency
Figure 32. Input Referred Noise Voltage
versus Frequency
100
250
200
V
V
T
= +15 V
= –15 V
V
V
V
V
= +15 V
= –15 V
= 0 V
= 0 V
= 25°C
CC
EE
A
V
CC
EE
CM
O
O
= 25
°C
50
T
A
150
100
Awakemode
Sleepmode
A
= 100
V
A
= 10
A
= 1000
Awakemode
V
V
10
50
0
A
= 1.0
V
5.0
1.0 k
10 k
100 k
f, FREQUENCY (Hz)
1.0 M
10 M
10
100
1.0 k
10 k
100 k
f, FREQUENCY (Hz)
Figure 34. Percent Overshoot
versus Load Capacitance
Figure 33. Current Noise versus Frequency
1.0
0.8
70
60
V
V
T
= +15 V
= –15 V
V
= +15 V
= –15 V
CC
EE
A
CC
EE
V
RS
O
V
T
= 25
°C
= 25
°C
A
0.6
0.4
(RS = 10 k)
50
40
30
20
Sleepmode
(R = 1.0 MΩ)
L
Awakemode
Sleepmode
0.2
0.1
Awakemode
(R = 600
Ω)
10
0
L
10
100
1.0 k
f, FREQUENCY (Hz)
10 k
100 k
10
100
1.0 k
C , LOAD CAPACITANCE (pF)
L
Figure 35. Sleepmode Large Signal
Transient Response
Figure 36. Awakemode Large Signal
Transient Response
R
= 600 Ω
L
R
=
L
t, TIME (50
µs/DIV)
t, TIME (5.0 µs/DIV)
10
MOTOROLA ANALOG IC DEVICE DATA
MC33102
Figure 37. Sleepmode Small Signal
Transient Response
Figure 38. Awakemode Small Signal
Transient Response
R
C
= 600 Ω
= 0 pF
R
C
=
L
L
L
L
= 0 pF
t, TIME (50 µs/DIV)
t, TIME (50 µs/DIV)
CIRCUIT INFORMATION
The MC33102 was designed primarily for applications
where high performance (which requires higher current drain)
is required only part of the time. The two–state feature of this
op amp enables it to conserve power during idle times, yet be
powered up and ready for an input signal. Possible
applications include laptop computers, automotive, cordless
phones, baby monitors, and battery operated test equipment.
Although most applications will require low power
consumption, this device can be used in any application
where better efficiency and higher performance is needed.
The Sleep–Mode amplifier has two states; a sleepmode
and an awakemode. In the sleepmode state, the amplifier is
active and functions as a typical micropower op amp. When a
signal is applied to the amplifier causing it to source or sink
sufficient current (see Figure 13), the amplifier will
automatically switch to the awakemode. See Figures 20 and
21 for transition times with 600 Ω and 10 kΩ loads.
The awakemode uses higher drain current to provide a
high slew rate, gain bandwidth, and output current capability.
In the awakemode, this amplifier can drive 27 Vpp into a
600 Ω load with V = ±15 V.
S
An internal delay circuit is used to prevent the amplifier
from returning to the sleepmode at every zero crossing. This
delay circuit also eliminates the crossover distortion
commonly found in micropower amplifiers. This amplifier can
process frequencies as low as 1.0 Hz without the amplifier
returning to sleepmode, depending on the load.
The first stage PNP differential amplifier provides low noise
performance in both the sleep and awake modes, and an all
NPN output stage provides symmetrical source and sink AC
frequency response.
APPLICATIONS INFORMATION
The MC33102 will begin to function at power supply
current threshold (I ) of approximately 160 µA. As a result,
TH
voltages as low as V = ±1.0 V at room temperature. (At this
the output switching threshold voltage (V ) is controlled by
ST
S
voltage, the output voltage swing will be limited to a few
hundred millivolts.) The input voltages must range between
the output loading resistance (R ). This loading can be a load
L
resistor, feedback resistors, or both. Then:
V
and V supply voltages as shown in the maximum
CC
EE
rating table. Specifically, allowing the input to go more
negative than 0.3 V below V may cause product
damage. Also, exceeding the input common mode voltage
V
= (160 µA) × R
L
ST
EE
Large valued load resistors require a large output voltage
to switch, but reduce unwanted transitions to the
awakemode. For instance, in cases where the amplifier is
range on either input may cause phase reversal, even if the
inputs are between V
and V
.
CC
EE
When power is initially applied, the part may start to
operate in the awakemode. This is because of the currents
generated due to charging of internal capacitors. When this
occurs and the sleepmode state is desired, the user will have
to wait approximately 1.5 seconds before the device will
switch back to the sleepmode. To prevent this from occurring,
ramp the power supplies from 1.0 V to full supply. Notice that
the device is more prone to switch into the awakemode when
connected with a large closed loop gain (A ), the input offset
CL
voltage (V ) is multiplied by the gain at the output and could
IO
produce an output voltage exceeding V
signal applied.
with no input
ST
Small values of R allow rapid transition to the awakemode
L
because most of the transition time is consumed slewing in
the sleepmode until V is reached (see Figures 20, 21). The
ST
output switching threshold voltage V
is higher for larger
ST
V
is adjusted than with a similar change in V .
EE
The amplifier is designed to switch from sleepmode to
CC
values of R , requiring the amplifier to slew longer in the
slower sleepmode state before switching to the awakemode.
L
awakemode whenever the output current exceeds a preset
11
MOTOROLA ANALOG IC DEVICE DATA
MC33102
The transition time (t ) required to switch from sleep to
tr1
minimize this problem, a resistor may be added in series with
the output of the device (inserted as close to the device as
possible) to isolate the op amp from both parasitic and load
capacitance.
The awakemode to sleepmode transition time is controlled
by an internal delay circuit, which is necessary to prevent the
amplifier from going to sleep during every zero crossing. This
time is a function of supply voltage and temperature as
shown in Figure 22.
Gain bandwidth product (GBW) in both modes is an
important system design consideration when using a
sleepmode amplifier. The amplifier has been designed to
obtain the maximum GBW in both modes. “Smooth” AC
transitions between modes with no noticeable change in the
amplitude of the output voltage waveform will occur as long
awake mode is:
t
= t = I
TH
(R /SR
L
)
sleepmode
tr1
D
Where: t
I
= Amplifier delay (<1.0 µs)
D
TH
= Output threshold current for
= more transition (160 µA)
= Load resistance
R
SR
L
= Sleepmode slew rate (0.16 V/µs)
sleepmode
Although typically 160 µA, I
varies with supply voltage
TH
and temperature. In general, any current loading on the
output which causes a current greater than I to flow will
TH
switch the amplifier into the awakemode. This includes
transition currents such as those generated by charging load
capacitances. In fact, the maximum capacitance that can be
driven while attempting to remain in the sleepmode is
approximately 1000 pF.
as the closed loop gains (A ) in both modes are
CL
substantially equal at the frequency of operation. For smooth
AC transitions:
(A
) (BW) < GBW
sleepmode
CLsleepmode
C
= I /SR
TH
L(max)
sleepmode
= 160 µA/(0.16 V/µs)
= 1000 pF
Where: A
A
= Closed loop gain in
= the sleepmode
CLsleepmode
CLsleepmode
BW = The required system bandwidth
BW = or operating frequency
Any electrical noise seen at the output of the MC33102
may also cause the device to transition to the awakemode. To
TESTING INFORMATION
To determine if the MC33102 is in the awakemode or the
of the currents caused by both the feedback loop and load
resistance. The total I needs to be subtracted from the
sleepmode, the power supply currents (I + and I –) must be
D
D
out
measured I to obtain the correct I of the dual op amp.
measured. When the magnitude of either power supply
current exceeds 400 µA, the device is in the awakemode.
When the magnitudes of both supply currents are less than
400 µA, the device is in the sleepmode. Since the total supply
current is typically ten times higher in the awakemode than
the sleepmode, the two states are easily distinguishable.
D
D
An accurate way to measure the awakemode I
current
current on
out
on automatic test equipment is to remove the I
both Channel A and B. Then measure the I values before
out
D
the device goes back to the sleepmode state. The transition
will take typically 1.5 seconds with ±15 V power supplies.
The large signal sleepmode testing in the characterization
was accomplished with a 1.0 MΩ load resistor which ensured
the device would remain in sleepmode despite large
voltage swings.
The measured value of I + equals the I of both devices
D
D
(for a dual op amp) plus the output source current of device A
and the output source current of device B. Similarly, the
measured value of I – is equal to the I – of both devices plus
D
D
the output sink current of each device. I
is the sum
out
12
MOTOROLA ANALOG IC DEVICE DATA
MC33102
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
ISSUE R
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
C
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
8
1
5
4
M
M
0.25
B
H
E
h X 45
MILLIMETERS
B
e
DIM
A
A1
B
C
D
E
e
H
h
MIN
1.35
0.10
0.35
0.18
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
C
SEATING
PLANE
L
1.27 BSC
0.10
5.80
0.25
0.40
0
6.20
0.50
1.25
7
A1
B
L
M
S
S
0.25
C
B
A
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
8
5
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–B–
MILLIMETERS
INCHES
1
4
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MIN
9.40
6.10
3.94
0.38
1.02
MAX
10.16
6.60
4.45
0.51
1.78
MIN
MAX
0.400
0.260
0.175
0.020
0.070
0.370
0.240
0.155
0.015
0.040
F
–A–
NOTE 2
L
2.54 BSC
0.100 BSC
0.76
0.20
2.92
7.62 BSC
–––
1.27
0.30
3.43
0.030
0.008
0.115
0.300 BSC
–––
0.050
0.012
0.135
C
10
1.01
10
0.040
0.76
0.030
J
–T–
SEATING
PLANE
N
M
D
K
G
H
M
M
M
0.13 (0.005)
T
A
B
13
MOTOROLA ANALOG IC DEVICE DATA
MC33102
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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