MC10EP58D [ONSEMI]
2:1 Multiplexer; 2 ： 1多路复用器
| 型号： | MC10EP58D |
| 厂家： | 
ONSEMI |
| 描述： | 2:1 Multiplexer |
| 文件： | 总8页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The MC10EP58 is a 2:1 multiplexer. The device is pin and
functionally equivalent to the EL58 and LVEL58 devices.
• 275ps Typical Propagation Delay
• High Bandwidth to 3 Ghz Typical
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• PECL mode: 3.0V to 5.5V V
with V = 0V
CC
EE
• ECL mode: 0V V
CC
with V = –3.0V to –5.5V
EE
• 75kΩ Internal Input Pulldown Resistors
• Q Output will default LOW with inputs open or at V
• ESD Protection: >4KV HBM, >200V MM
EE
8
• Moisture Sensitivity Level 1, Indefinite Time Out of Drypack.
For Additional Information, See Application Note AND8003/D
• Flammability Rating: UL–94 code V–0 @ 1/8”,
Oxygen Index 28 to 34
1
SO–8
D SUFFIX
CASE 751
• Transistor Count = 41 devices
MARKING DIAGRAM
8
1
A = Assembly Location
L = Wafer Lot
Y = Year
HEP58
ALYW
NC 1
8
7
V
CC
W = Work Week
Da
Db
2
3
Q
Q
1
*For additional information, see Application Note
AND8002/D
MUX
6
5
PIN DESCRIPTION
0
PIN
Da, Db
SEL
FUNCTION
ECL Data Inputs
ECL Select Inputs
ECL Data Outputs
SEL
4
V
EE
Q, Q
Figure 1. 8–Lead Pinout (Top View) and Logic Diagram
TRUTH TABLE
SEL
Data
H
L
a
b
ORDERING INFORMATION
Device
Package
Shipping
MC10EP58D
SOIC
98 Units/Rail
MC10EP58DR2
SOIC
2500 Tape & Reel
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
September, 1999 – Rev. 1.0
MC10EP58/D
MC10EP58
MAXIMUM RATINGS*
Symbol
Parameter
Value
–6.0 to 0
6.0 to 0
–6.0 to 0
6.0 to 0
Unit
VDC
VDC
VDC
VDC
mA
V
V
V
V
Power Supply (V
Power Supply (V
= 0V)
= 0V)
EE
CC
CC
EE
Input Voltage (V
Input Voltage (V
Output Current
= 0V, V not more negative than V )
EE
I
I
CC
I
= 0V, V not more positive than V
)
CC
EE
I
I
Continuous
Surge
50
100
out
T
Operating Temperature Range
Storage Temperature
–40 to +85
°C
°C
A
T
–65 to +150
stg
JA
θ
Thermal Resistance (Junction–to–Ambient)
Still Air
500lfpm
190
130
°C/W
θ
Thermal Resistance (Junction–to–Case)
41 to 44 ± 5%
°C/W
°C
JC
T
Solder Temperature (<2 to 3 Seconds: 245°C desired)
265
sol
* Maximum Ratings are those values beyond which damage to the device may occur.
DC CHARACTERISTICS, ECL/LVECL (V
= 0V; V
= –5.5V to –3.0V) (Note 3.)
CC
EE
–40°C
Typ
28
25°C
Typ
30
85°C
Typ
31
Symbol
Characteristic
Power Supply Current
Min
Max
Min
Max
Min
Max
Unit
20
37
20
39
22
40
mA
IEE
(Note 1.)
V
V
V
V
Output HIGH Voltage
(Note 2.)
–1135 –1060 –885 –1070 –945
–820 –1010 –885
–760
mV
mV
mV
mV
OH
OL
IH
Output LOW Voltage
(Note 2.)
–1935 –1810 –1685 –1870 –1745 –1620 –1810 –1685 –1560
Input HIGH Voltage
Single Ended
–1210
–1935
–885 –1145
–1610 –1870
150
–820 –1085
–1545 –1810
150
–760
–1485
150
Input LOW Voltage
Single Ended
IL
I
I
Input HIGH Current
Input LOW Current
µA
µA
IH
D
D
0.5
0.5
0.5
–150
IL
–150
–150
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
1. V
= 0V, V
= V
to V
, all other pins floating.
CC
EE
EEmin
EEmax
2. All loading with 50 ohms to V –2.0 volts.
3. Input and output parameters vary 1:1 with V
CC
.
CC
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2
MC10EP58
DC CHARACTERISTICS, LVPECL (V
= 3.3V ± 0.3V, V
= 0V) (Note 6.)
EE
CC
–40°C
25°C
Typ
30
85°C
Typ
31
Symbol
Characteristic
Power Supply Current
Min
Typ
Max
Min
Max
Min
Max
Unit
20
28
37
20
39
22
40
mA
IEE
(Note 4.)
V
V
V
V
Output HIGH Voltage
(Note 5.)
2165
1365
2090
1365
2240
1490
2415
1615
2415
1690
150
2230
1430
2155
1430
2355
1555
2480
1680
2480
1755
150
2290
1490
2215
1490
2415
1615
2540
1740
2540
1815
150
mV
mV
mV
mV
OH
OL
IH
Output LOW Voltage
(Note 5.)
Input HIGH Voltage
Single Ended
Input LOW Voltage
Single Ended
IL
I
I
Input HIGH Current
Input LOW Current
µA
µA
IH
D
D
0.5
–150
0.5
–150
0.5
–150
IL
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
4. V
= 3.3V, V = 0V, all other pins floating.
CC
EE
5. All loading with 50 ohms to V –2.0 volts.
CC
6. Input and output parameters vary 1:1 with V
.
CC
DC CHARACTERISTICS, PECL (V
= 5.0V ± 0.5V, V
= 0V) (Note 9.)
EE
CC
–40°C
Typ
28
25°C
Typ
30
85°C
Typ
31
Symbol
Characteristic
Power Supply Current
Min
Max
Min
Max
Min
Max
Unit
20
37
20
39
22
40
mA
IEE
(Note 7.)
V
V
V
V
Output HIGH Voltage
(Note 8.)
3865
3065
3790
3065
3940
3190
4115
3315
4115
3390
150
3930
3130
3855
3130
4055
3255
4180
3380
4180
3455
150
3990
3190
3915
3190
4115
3315
4240
3440
4240
3515
150
mV
mV
mV
mV
OH
OL
IH
Output LOW Voltage
(Note 8.)
Input HIGH Voltage
Single Ended
Input LOW Voltage
Single Ended
IL
I
I
Input HIGH Current
Input LOW Current
µA
µA
IH
D
D
0.5
–150
0.5
–150
0.5
–150
IL
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
7. V
= 5.0V, V = 0V, all other pins floating.
CC
EE
8. All loading with 50 ohms to V –2.0 volts.
CC
9. Input and output parameters vary 1:1 with V
.
CC
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3
MC10EP58
AC CHARACTERISTICS (V
= 0V; V
EE
= –3.0V to –5.5V) or (V
CC
= 3.0V to 5.5V; V
CC
EE = 0V)
–40°C
25°C
85°C
Typ
3.0
Symbol
Characteristic
Maximum Toggle
Min
Typ
Max
Min
Typ
Max
Min
Max
Unit
f
3.0
3.0
GHz
max
Frequency (Note 10.)
t
t
,
Propagation Delay to
Output Differential
ps
PLH
PHL
D–>Q, Q
SEL–>Q, Q
170
170
250
250
350
350
190
190
275
275
375
375
210
210
300
300
400
400
t
t
Duty Cycle Skew (Note 11.)
Cycle–to–Cycle Jitter
5.0
TBD
800
120
5.0
TBD
800
130
20
5.0
TBD
800
150
20
ps
ps
SKEW
JITTER
V
Input Voltage Swing (Diff.)
150
60
1200
190
150
60
1200
200
150
70
1200
220
mV
ps
PP
t
r
t
f
Output Rise/Fall Times
(20% – 80%)
Q
10.F
max
guaranteed for functionality only. V
and V
levels are guaranteed at DC only.
OH
OL
11. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays
are measured from the cross point of the inputs to the cross point of the outputs.
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4
MC10EP58
PACKAGE DIMENSIONS
SO–8
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751–06
ISSUE T
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
C
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
8
1
5
4
M
M
0.25
B
H
E
h X 45
MILLIMETERS
B
e
DIM MIN
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
A1
B
C
D
E
1.35
0.10
0.35
0.19
4.80
3.80
A
C
SEATING
PLANE
L
e
1.27 BSC
0.10
H
h
L
5.80
0.25
0.40
0
6.20
0.50
1.25
7
A1
B
M
S
S
0.25
C B
A
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5
MC10EP58
Notes
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6
MC10EP58
Notes
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7
MC10EP58
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MC10EP58/D
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