MBRF2045CT [ONSEMI]
SWITCHMODE Power Rectifier; 开关模式™功率整流器
| 型号： | MBRF2045CT |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifier |
| 文件： | 总8页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2045CT, MBRF2045CT
SWITCHMODE]
Power Rectifier
Features and Benefits
• Low Forward Voltage
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• Low Power Loss / High Efficiency
• High Surge Capacity
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 45 VOLTS
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Pb−Free Package is Available*
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
1
2, 4
3
Mechanical Characteristics
MARKING
DIAGRAMS
• Case: Epoxy, Molded
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
4
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
TO−220AB
MBR2045CTG
CASE 221A
• ESD Rating:
Human Body Model = 3B
Machine Model = C
AKA
STYLE 6
1
2
3
AYWW
B2045G
AKA
TO−220 FULLPAK
CASE 221D
STYLE 3
1
2
3
A
Y
= Assembly Location
= Year
WW
G
AKA
= Work Week
= Pb−Free Package
= Diode Polarity
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
May, 2008 − Rev. 8
MBR2045CT/D
MBR2045CT, MBRF2045CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
45
V
RRM
RWM
R
V
V
Average Rectified Forward Current
Per Device
I
A
A
F(AV)
20
10
Per Diode (T = 165°C)
C
Peak Repetitive Forward Current
I
20
FRM
per Diode Leg (Square Wave, 20 kHz, T = 163°C)
C
Non−Repetitive Peak Surge Current
I
150
1.0
A
A
FSM
RRM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
See Figure 13
Storage Temperature Range
T
−65 to +175
−65 to +175
10,000
°C
°C
stg
Operating Junction Temperature (Note 1)
T
J
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR2045CT)
°C/W
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
− Junction−to−Ambient
R
R
2.0
60
4.75
75
q
JC
q
JA
(MBRF2045CT)
R
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Instantaneous Forward Voltage (Note 2)
v
V
F
(i = 10 Amps, T = 125°C)
−
−
−
0.50
0.67
0.71
0.57
0.72
0.84
F
J
(i = 20 Amps, T = 125°C)
F
J
(i = 20 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T = 125°C)
i
mA
R
−
−
10.4
0.02
15
0.1
J
(Rated dc Voltage, T = 25°C)
J
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
MBR2045CT
†
Package Type
Shipping
TO−220
50 Units / Rail
50 Units / Rail
MBR2045CTG
TO−220
(Pb−Free)
MBRF2045CTG
TO−220FP
(Pb−Free)
50 Units / Rail
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2
MBR2045CT, MBRF2045CT
100
100
T = 150°C
J
70
50
70
50
125°C
25°C
30
20
30
20
T = 150°C
J
10
7.0
5.0
10
7.0
5.0
125°C
25°C
3.0
2.0
3.0
2.0
1.0
1.0
0.7
0.5
0.7
0.5
0.3
0.2
0.3
0.2
0.1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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3
MBR2045CT, MBRF2045CT
100
10
100
T = 150°C
J
T = 150°C
J
125°C
100°C
10
1.0
0.1
125°C
100°C
1.0
75°C
0.1
0.01
25°C
25°C
0.01
0.001
0.0001
0.001
0
5.0
10
15
20
25
30
35
40
45
50
0
5.0
10
15
20
25
30
35
40
45
50
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
200
18
16
dc
14
12
100
70
10
SQUARE
WAVE
8.0
6.0
4.0
50
30
20
2.0
0
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
140
145
150
155
160
165
170
175 180
NUMBER OF CYCLES AT 60 Hz
T , CASE TEMPERATURE (°C)
C
Figure 5. Maximum Surge Capability
Figure 6. Current Derating, Case, Per Leg
20
18
28
26
24
22
20
18
16
14
12
10
8
R
= 16°C/W
(With TO-220 Heat Sink)
T = 175°C
J
q
JA
dc
16
R
q
= 60°C/W
(No Heat Sink)
JA
14
SQUARE WAVE
12
dc
SQUARE
WAVE
10
8.0
6.0
4.0
dc
6
4
2.0
0
2
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
T , AMBIENT TEMPERATURE (°C)
A
I
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
Figure 7. Current Derating, Ambient, Per Leg
Figure 8. Forward Power Dissipation
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4
MBR2045CT, MBRF2045CT
1.0
0.7
0.5
0.3
0.2
P
P
pk
pk
DUTY CYCLE, D = t /t
p 1
PEAK POWER, P , is peak of an
t
p
pk
equivalent square power pulse.
0.1
0.07
0.05
TIME
t
1
DT = P • R [D + (1 - D) • r(t + t ) + r(t ) - r(t )] where:
q
JL
pk
JL
1
p
p
1
DT = the increase in junction temperature above the lead temperature.
JL
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.03
0.02
r(t + t ) = normalized value of transient thermal resistance at time,
1
p
t + t , etc.
1
p
0.01
0.01
0.1
1.0
10
100
1000
t, TIME (ms)
Figure 9. Thermal Response for MBR2045CT
100
10
D = 0.5
0.2
0.1
0.05
0.02
1.0
0.1
0.01
P
(pk)
t
1
0.01
SINGLE PULSE
t
2
DUTY CYCLE, D = t /t
1 2
0.001
0.000001
0.00001
0.0001
0.001
0.01
t , TIME (sec)
0.1
1.0
10
100
1000
1
Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT
10
D = 0.5
0.2
1.0
0.1
0.05
0.02
0.01
0.1
0.01
P
(pk)
t
1
SINGLE PULSE
t
2
DUTY CYCLE, D = t /t
1 2
0.001
0.000001
0.00001
0.0001
0.001
0.01
t , TIME (sec)
0.1
1.0
10
100
1000
1
Figure 11. Thermal Response Junction−to−Case for MBRF2045CT
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5
MBR2045CT, MBRF2045CT
1000
HIGH FREQUENCY OPERATION
T = 25°C
J
f = 1 MHz
900
800
700
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
600
500
400
300
200
100
0
0
10
20
30
40
50
V , REVERSE VOLTAGE (VOLTS)
R
Figure 12. Typical Capacitance
+150 V, 10 mAdc
2.0 kW
V
CC
12 Vdc
+
D.U.T.
12 V
100
4.0 mF
2N2222
2.0 ms
1.0 kHz
CURRENT
2N6277
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
1.0 CARBON
1N5817
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
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6
MBR2045CT, MBRF2045CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
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7
MBR2045CT, MBRF2045CT
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
SEATING
PLANE
−T−
−B−
C
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
1.00
3.28
A
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
1
2 3
−Y−
G
H
J
0.100 BSC
2.54 BSC
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
M
M
0.25 (0.010)
B
Y
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MBR2045CT/D
相关型号：
MBRF2045CT-G
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, Silicon, TO-220AB, GREEN, PLASTIC, ITO-220AB, 3 PIN
SENSITRON
MBRF2045CT/45-E3
DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY
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