MBRB3045CT-1G [ONSEMI]
SWITCHMODE? Power Rectifier; 开关模式™功率整流器
| 型号： | MBRB3045CT-1G |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE? Power Rectifier |
| 文件： | 总5页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR3045ST,
MBRB3045CT-1
SWITCHMODE™
Power Rectifier
Features and Benefits
• Dual Diode Construction — Terminals 1 and 3 May Be Connected
for Parallel Operation at Full Rating
• 45 V Blocking Voltage
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• Low Forward Voltage Drop
SCHOTTKY BARRIER
RECTIFIER
• 175°C Operating Junction Temperature
• Pb−Free Packages are Available
Applications
30 AMPERES
45 VOLTS
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics
3
2, 4
• Case: Epoxy, Molded
1
• Weight (Approximately): 1.9 Grams (TO−220AB)
1.5 Grams (TO−262)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
MARKING
DIAGRAMS
• Lead Temperature for Soldering Purposes:
4
260°C Max. for 10 Seconds
• Epoxy Meets UL 94 V−0 @ 0.125 in
MAXIMUM RATINGS
TO−220AB
CASE 221A
STYLE 6
AYWW
B3045G
AKA
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
45
V
RRM
V
RWM
1
V
R
2
3
Average Rectified Current
(T = 130°C)
C
Per Device
Per Diode
I
30
15
A
A
A
F(AV)
4
Peak Repetitive Forward Current, per Diode
I
30
FRM
AYWW
B3045CTG
AKA
2
I PAK (TO−262)
CASE 418D
PLASTIC
(Square Wave, V = 45 V, 20 kHz)
R
Non−Repetitive Peak Surge Current (Surge
Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
I
150
FSM
Peak Repetitive Reverse Current, per Diode
(2.0 ms, 1.0 kHz)
I
2.0
A
°C
RRM
1
2
3
A
Y
= Assembly Location
= Year
Storage Temperature Range
T
−65 to
stg
WW
AKA
G
= Work Week
= Polarity Designator
= Pb−Free Device
+175
Operating Junction Temperature (Note 1)
T
−65 to
°C
J
+175
Peak Surge Junction Temperature
(Forward Current Applied)
T
175
°C
J(pk)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Voltage Rate of Change (Rated V )
dv/dt
10,000
V/ms
R
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
May, 2008 − Rev. 7
MBR3045ST/D
MBR3045ST, MBRB3045CT−1
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2) (i = 15 Amp, T = 25°C)
Symbol
Value
Unit
R
θ
JC
1.5
°C/W
v
0.62
0.57
0.76
0.72
Volts
mA
F
C
F
(i = 15 Amp, T = 125°C)
F
C
(i = 30 Amp, T = 25°C)
F
C
(i = 30 Amp, T = 125°C)
F
C
Instantaneous Reverse Current (Note 2) (V = 45 Volts, T = 25°C)
I
R
0.2
40
R
C
(V = 45 Volts, T = 125°C)
R
C
2
Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%
1000
200
100
40
20
10
T = 150°C
J
150°C
100
125°C
100°C
4.0
2.0
1.0
T = 125°C
J
10
0.4
0.2
0.1
75°C
25°C
0.04
0.02
0.01
1.0
0.1
25°C
0.004
0.002
0
0.2
0.4 0.6
0.8 1.0 1.2
1.4 1.6 1.8
0
10
20
30
40
50
v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
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2
MBR3045ST, MBRB3045CT−1
32
32
28
24
20
16
RATED V APPLIED
R
28
dc
dc
R
= 16°C/W
(With TO-220 Heat Sink)
q
JA
24
20
SQUARE WAVE
R
= 60°C/W
(No Heat Sink)
q
JA
SQUARE WAVE
16
12
8.0
4.0
0
12
RATED VOLTAGE APPLIED
dc
R
q
JC
= 1.5°C/W
8.0
4.0
SQUARE WAVE
0
110
120
130
140
150
0
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
10000
1000
32
SQUARE WAVE
I
I
T = 25°C
J
f = 1 MHz
PK
AV
(RESISTIVEꢀLOAD)
+ p
28
24
20
16
12
8.0
I
I
PK
AV
dc
(CAPACITATIVEꢀLOAD)
+ 5.0
10
100
10
20
T = 125°C
J
4.0
0
0
4.0 8.0
12
16
20
24
28
32
36
40
0
10
20
30
40
50
I , AVERAGE FORWARD CURRENT (AMPS)
F
V , REVERSE VOLTAGE (V)
R
Figure 5. Forward Power Dissipation
Figure 6. Capacitance
ORDERING INFORMATION
Device
Package
Shipping
MBR3045ST
TO−220
50 Units/Rail
MBR3045STG
TO−220
50 Units/Rail
50 Units/Rail
50 Units/Rail
(Pb−Free)
MBRB3045CT−1
TO−262
MBRB3045CT−1G
TO−262
(Pb−Free)
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3
MBR3045ST, MBRB3045CT−1
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
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4
MBR3045ST, MBRB3045CT−1
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D−01
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
INCHES
DIM MIN MAX
MILLIMETERS
A
MIN
8.51
9.65
4.06
0.66
1.14
MAX
9.65
10.31
4.70
0.89
1.40
W
A
B
C
D
E
F
0.335
0.380
0.160
0.026
0.045
0.380
0.406
0.185
0.035
0.055
1
2
3
F
0.122 REF
0.100 BSC
3.10 REF
2.54 BSC
−T−
G
H
J
SEATING
PLANE
0.094
0.013
0.500
0.110
0.025
2.39
0.33
2.79
0.64
K
K
S
V
W
0.562 12.70
14.27
S
0.390 REF
9.90 REF
0.045
0.522
0.070 1.14
0.551 13.25
1.78
14.00
J
G
H
D 3 PL
M
M
T B
0.13 (0.005)
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
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MBR3045ST/D
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