MBRB3030CTL [ONSEMI]
SWITCHMODE Power Rectifier; 开关模式电源整流器
| 型号： | MBRB3030CTL |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifier |
| 文件： | 总8页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRB3030CTL
SWITCHMODEt
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a proprietary barrier metal.
Features
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• Dual Diode Construction, May be Paralleled for Higher Current Output
• Guard−Ring for Stress Protection
• Low Forward Voltage Drop
• 125°C Operating Junction Temperature
• Maximum Die Size
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 30 VOLTS
• Short Heat Sink Tab Manufactured − Not Sheared!
• Pb−Free Package is Available
1
4
3
Mechanical Characteristics
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
4
• Lead and Mounting Surface Temperature for Soldering Purposes:
1
260°C Max. for 10 Seconds
3
• Device Meets MSL1 Requirements
• ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
2
D PAK
CASE 418B
PLASTIC
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
MARKING DIAGRAM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
30
V
RRM
V
RWM
V
I
R
Average Rectified Forward Current
15
30
A
A
AY WW
B3030CTLG
AKA
O
(At Rated V , T = 115°C) Per Device
R
C
Peak Repetitive Forward Current
I
30
300
2.0
FRM
(At Rated V , Square Wave,
R
20 kHz, T = 115°C)
C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
A
A
FSM
A
Y
= Assembly Location
= Year
Peak Repetitive Reverse Surge Current
I
RRM
(1.0 ms, 1.0 kHz)
WW
= Work Week
Storage Temperature Range
T
−55 to +150
−55 to +125
10,000
°C
°C
stg
B3030CTL = Device Code
G
AKA
Operating Junction Temperature Range
T
= Pb−Free Package
= Diode Polarity
J
Voltage Rate of Change
dV/dt
V/ms
(Rated V , T = 25°C)
R
J
ORDERING INFORMATION
Reverse Energy, Unclamped Inductive
E
224.5
mJ
AS
Surge (T = 25°C, L = 3.0 mH)
J
Device
Package
Shipping
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
MBRB3030CTL
D PAK
50 Units / Rail
50 Units / Rail
2
MBRB3030CTLG
D PAK
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 6
MBRB3030CTL/D
MBRB3030CTL
THERMAL CHARACTERISTICS (All device data is “Per Leg” except where noted.)
Characteristic
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Case
Symbol
Value
50
Unit
°C/W
°C/W
R
q
JA
JC
R
q
1.0
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
V
V
F
(I = 15 A, T = 25°C)
0.44
0.51
F
J
(I = 30 A, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 2)
I
mA
R
(Rated V , T = 25°C)
2.0
195
R
J
(Rated V , T = 125°C)
R
J
1. Mounted using minimum recommended pad size on FR−4 board.
2. Pulse Test: Pulse Width = 250 ms, Duty Cycle ≤ 2.0%.
1000
100
1000
100
T = 125°C
J
T = 125°C
J
10
10
1.0
0.1
75°C
75°C
25°C
25°C
1.0
0.1
0.1
0.3
0.5
0.7
0.9
1.1
0.1
0.3
0.5
0.7
0.9
1.1
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E+0
1.0E+0
1.0E−1
1.0E−2
1.0E−3
T = 125°C
J
1.0E−1
1.0E−2
1.0E−3
T = 125°C
J
75°C
25°C
75°C
25°C
1.0E−4
1.0E−5
1.0E−4
1.0E−5
0
5.0
10
15
20
25
30
0
5.0
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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2
MBRB3030CTL
25
20
15
10
10
9.0
8.0
7.0
6.0
5.0
4.0
dc
dc
SQUARE
WAVE
Ipk/Io = p
SQUARE WAVE
Ipk/Io = 5.0
Ipk/Io = 10
Ipk/Io = p
Ipk/Io = 5.0
Ipk/Io = 20
3.0
2.0
Ipk/Io = 10
Ipk/Io = 20
T = 125°C
J
5.0
0
FREQ = 20 kHz
1.0
0
0
20
40
60
80
100
120
140
0
5.0
10
15
20
25
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (AMPS)
O
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
10,000
1000
100
100
T = 25°C
J
T = 25°C
J
10
0.1
1.0
10
100
0.00001
0.0001
t, TIME (seconds)
0.001
0.01
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Typical Capacitance
Figure 8. Typical Unclamped Inductive Surge
1.0E+00
1.0E−01
1.0E−02
R
= R
tjc*r(t)
tjc(t)
0.00001
0.0001
0.001
0.01
0.1
1.0
10
t, TIME (seconds)
Figure 9. Typical Thermal Response
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3
MBRB3030CTL
Modeling Reverse Energy Characteristics
of Power Rectifiers
Prepared by: David Shumate & Larry Walker
ON Semiconductor Products Sector
ABSTRACT
applied to devices used in this switching power circuitry.
This technology lends itself to lower reverse breakdown
voltages. This combination of high voltage spikes and low
reverse breakdown voltage devices can lead to reverse
energy destruction of power rectifiers in their applications.
This phenomena, however, is not limited to just Schottky
technology.
In order to meet the challenges of these situations, power
semiconductor manufacturers attempt to characterize their
devices with respect to reverse energy robustness. The
typical reverse energy specification, if provided at all, is
usually given as energy−to−failure (mJ) with a particular
inductor specified for the UIS test circuit. Sometimes the
peak reverse test current is also specified. Practically all
reverse energy characterizations are performed using the
UIS test circuit shown in Figure 10. Typical UIS voltage and
current waveforms are shown in Figure 11.
Power semiconductor rectifiers are used in a variety of
applications where the reverse energy requirements often
vary dramatically based on the operating conditions of the
application circuit. A characterization method was devised
using the Unclamped Inductive Surge (UIS) test technique.
By testing at only a few different operating conditions
(i.e. different inductor sizes) a safe operating range can be
established for a device. A relationship between peak
avalanche current and inductor discharge time was
established. Using this relationship and circuit parameters,
the part applicability can be determined. This technique
offers a power supply designer the total operating conditions
for a device as opposed to the present single−data−point
approach.
INTRODUCTION
In order to provide the designer with a more extensive
characterization than the above mentioned one−point
approach, a more comprehensive method for characterizing
these devices was developed. A designer can use the given
information to determine the appropriateness and safe
operating area (SOA) of the selected device.
In today’s modern power supplies, converters and other
switching circuitry, large voltage spikes due to parasitic
inductance can propagate throughout the circuit, resulting in
catastrophic device failures. Concurrent with this, in an
effort to provide low−loss power rectifiers, i.e., devices with
lower forward voltage drops, Schottky technology is being
HIGH SPEED SWITCH
CHARGE INDUCTOR
DRAIN CURRENT
FREE−WHEELING
DIODE
+
V
−
INDUCTOR
CHARGE
SWITCH
DRAIN VOLTAGE
DUT
GATE
VOLTAGE
Figure 10. Simplified UIS Test Circuit
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4
MBRB3030CTL
Suggested Method of Characterization
Example Application
The device used for this example was an MBR3035CT,
which is a 30 A (15 A per side) forward current, 35 V reverse
breakdown voltage rectifier. All parts were tested to
destruction at 25°C. The inductors used for the
characterization were 10, 3.0, 1.0 and 0.3 mH. The data
recorded from the testing were peak reverse current (Ip),
peak reverse breakdown voltage (BVR), maximum
withstand energy, inductance and inductor discharge time
(see Table 1). A plot of the Peak Reverse Current versus
Time at device destruction, as shown in Figure 12, was
generated. The area under the curve is the region of lower
reverse energy or lower stress on the device. This area is
known as the safe operating area or SOA.
INDUCTOR
CURRENT
DUT
REVERSE
VOLTAGE
TIME (s)
120
100
80
Figure 11. Typical Voltage and Current UIS
Waveforms
Utilizing the UIS test circuit in Figure 10, devices are
tested to failure using inductors ranging in value from 0.01
to 159 mH. The reverse voltage and current waveforms are
acquired to determine the exact energy seen by the device
and the inductive current decay time. At least 4 distinct
inductors and 5 to 10 devices per inductor are used to
generate the characteristic current versus time relationship.
This relationship when coupled with the application circuit
conditions, defines the SOA of the device uniquely for this
application.
UIS CHARACTERIZATION CURVE
60
40
20
0
SAFE OPERATING AREA
0
0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004
TIME (s)
Figure 12. Peak Reverse Current versus
Time for DUT
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5
MBRB3030CTL
As an example, the values were chosen as L = 200 mH,
OV = 12 V and BVR = 35 V.
Figure 13 illustrates the example. Note the UIS
characterization curve, the parasitic inductor current curve
and the safe operating region as indicated.
Table 1. UIS Test Data
PART
ENERGY
(mJ)
TIME
NO.
I
(A)
B
(V)
L (mH)
1
(ms)
P
VR
1
2
3
4
5
6
7
8
9
46.6
41.7
46.0
42.7
44.9
44.1
26.5
26.4
24.4
27.6
27.7
17.9
18.9
18.8
19.0
74.2
77.3
75.2
77.3
73.8
75.6
74.7
78.4
70.5
78.3
65.2
63.4
66.0
64.8
64.8
64.1
63.1
62.8
62.2
62.9
63.2
62.6
62.1
60.7
62.6
69.1
69.6
68.9
69.6
69.1
69.2
68.6
70.3
66.6
69.4
998.3
870.2
1038.9
904.2
997.3
865.0
1022.6
1024.9
872.0
1091.0
1102.4
1428.6
1547.4
1521.1
1566.2
768.4
815.4
791.7
842.6
752.4
823.2
747.5
834.0
678.4
817.3
715
657
1
120
1
697
1
659
I
ꢀ TIME RELATIONSHIP
DUE TO CIRCUIT PARASITICS
peak
100
80
1
693
1
687
3
1261
1262
1178
1316
1314
2851
3038
3092
3037
322
60
3
3
UIS CHARACTERIZATION CURVE
40
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
3
20
0
3
SAFE OPERATING AREA
10
10
10
10
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0
0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004
TIME (s)
Figure 13. DUT Peak Reverse and Circuit
Parasitic Inductance Current versus Time
333
328
SUMMARY
333
Traditionally, power rectifier users have been supplied
with single−data−point reverse−energy characteristics by
the supplier’s device data sheet; however, as has been shown
here and in previous work, the reverse withstand energy can
vary significantly depending on the application. What was
done in this work was to create a characterization scheme by
which the designer can overlay or map their particular
requirements onto the part capability and determine quite
accurately if the chosen device is applicable. This
characterization technique is very robust due to its statistical
approach, and with proper guardbanding (6s) can be used to
give worst−case device performance for the entire product
line. A “typical” characteristic curve is probably the most
applicable for designers allowing them to design in their
own margins.
321
328
327
335
317
339
The procedure to determine if a rectifier is appropriate,
from a reverse energy standpoint, to be used in the
application circuit is as follows:
a. Obtain “Peak Reverse Current versus Time” curve
from data book.
b. Determine steady state operating voltage (OV) of
circuit.
c. Determine parasitic inductance (L) of circuit section of
interest.
d. Obtain rated breakdown voltage (BVR) of rectifier
from data book.
References
1. Borras, R., Aliosi, P., Shumate, D., 1993, “Avalanche
Capability of Today’s Power Semiconductors,
“Proceedings, European Power Electronic
Conference,” 1993, Brighton, England
e. From the following relationships,
(BVR * OV) @ t
d
V + L @ i(t)
dt
2. Pshaenich, A., 1985, “Characterizing Overvoltage
Transient Suppressors,” Powerconversion
International, June/July
I +
L
a “designer” l versus t curve is plotted alongside the
device characteristic plot.
f. The point where the two curves intersect is the current
level where the devices will start to fail. A peak
inductor current below this intersection should be
chosen for safe operating.
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6
MBRB3030CTL
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
M
N
P
R
S
V
H
D 3 PL
M
M
0.13 (0.005)
T
B
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
VARIABLE
CONFIGURATION
ZONE
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MBRB3030CTL
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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MBRB3030CTL/D
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