MBR1050 [ONSEMI]
10 A 肖特基势垒整流器;
| 型号： | MBR1050 |
| 厂家： | 
ONSEMI |
| 描述： | 10 A 肖特基势垒整流器 局域网 整流二极管 |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1060, MBR1080,
MBR1090, MBR10100
MBR1060 and MBR10100 are Preferred Devices
SWITCHMODEt
Power Rectifiers
This series of SWITCHMODE power rectifiers uses the Schottky
Barrier principle with a platinum barrier metal. These state−of−the−art
devices have the following features:
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES, 60 to 100 VOLTS
Features
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Low Power Loss/High Efficiency
• High Surge Capacity
• Low Stored Charge Majority Carrier Conduction
• Pb−Free Packages are Available*
3
1, 4
MARKING
DIAGRAM
4
Mechanical Characteristics
TO−220AC
CASE 221B
PLASTIC
AY WWG
B10x0
KA
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
1
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
3
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
B10x0 = Device Code
x
= 6, 8, 9 or 10
KA
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBR1060
TO−220
50 Units/Rail
50 Units/Rail
MBR1060G
TO−220
(Pb−Free)
MBR1080
TO−220
50 Units/Rail
50 Units/Rail
MBR1080G
TO−220
(Pb−Free)
MBR1090
TO−220
50 Units/Rail
50 Units/Rail
MBR1090G
TO−220
(Pb−Free)
MBR10100
TO−220
50 Units/Rail
50 Units/Rail
MBR10100G
TO−220
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 6
MBR1060/D
MBR1060, MBR1080, MBR1090, MBR10100
MAXIMUM RATINGS
MBR
Rating
Symbol
Unit
1060
1080
1090
10100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
60
80
90
100
V
RRM
RWM
R
Average Rectified Forward Current (Rated V ) T = 133°C
I
F(AV)
10
20
A
A
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 133°C
R
C
Nonrepetitive Peak Surge Current
I
150
0.5
A
FSM
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
I
A
°C
RRM
T
J
*65 to +175
*65 to +175
10,000
Storage Temperature
T
°C
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
ELECTRICAL CHARACTERISTICS
R
R
2.0
60
°C/W
°C/W
q
JC
JA
q
Maximum Instantaneous Forward Voltage (Note 2)
v
V
F
(i = 10 Amps, T = 125°C)
0.7
0.8
F
C
(i = 10 Amps, T = 25°C)
F
C
(i = 20 Amps, T = 125°C)
0.85
0.95
F
C
(i = 20 Amps, T = 25°C)
F
C
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T = 125°C)
i
R
mA
6.0
C
(Rated dc Voltage, T = 25°C)
0.10
C
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR1060, MBR1080, MBR1090, MBR10100
50
20
10
T = 150°C
J
10
150°C
125°C
100°C
100°C
125°C
1.0
5.0
3.0
T = 25°C
J
0.1
1.0
0.5
25°C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
20
40
60
80
100
120
140
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
(HEATSINK)
= 16°C/W
R
q
JA
(NO HEATSINK)
= 60°C/W
R
q
JA
SQUARE WAVE
RATED VOLTAGE
APPLIED
dc
dc
dc
RATED VOLTAGE APPLIED
R
q
= 2°C/W
JC
1.0
0
1.0
0
SQUARE WAVE
110
120
130
140
150
160
0
20
40
60
80
100 120 140 160 180 200
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
10
T = 25°C
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
A
I /I = p
PK AV
I /I = 5.0
PK AV
I /I = 10
PK AV
dc
I
/I = 20
PK AV
SQUARE WAVE
1.0
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
, AVERAGE CURRENT (AMPS)
10
I
F(AV)
Figure 5. Forward Power Dissipation
http://onsemi.com
3
MBR1060, MBR1080, MBR1090, MBR10100
PACKAGE DIMENSIONS
TO−220
PLASTIC
CASE 221B−04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
F
T
S
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.46
12.70
1.14
2.54
2.04
1.14
5.97
0.000
MAX
15.75
10.29
4.82
0.89
3.73
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
A
B
C
D
F
0.595
0.380
0.160
0.025
0.142
0.190
0.110
0.018
0.500
0.045
0.100
0.080
0.045
0.235
0.000
0.620
0.405
0.190
0.035
0.147
0.210
0.130
0.025
0.562
0.060
0.120
0.110
0.055
0.255
0.050
4
A
U
1
3
G
H
J
H
K
K
L
Q
R
S
T
L
R
D
U
J
G
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
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Order Literature: http://www.onsemi.com/litorder
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MBR1060/D
相关型号：
MBR1050CT
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
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