MBR1045 [ONSEMI]
SWITCHMODE Power Rectifiers; 开关模式电源整流器
| 型号： | MBR1045 |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers |
| 文件： | 总6页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1035, MBR1045
SWITCHMODE™
Power Rectifiers
Features and Benefits
• Low Forward Voltage
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• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 10 A Total
• Pb−Free Packages are Available*
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
35 to 45 VOLTS
Applications
• Power Supply – Output Rectification
• Power Management
• Instrumentation
3
1, 4
Mechanical Characteristics
MARKING
DIAGRAM
• Case: Epoxy, Molded
4
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
TO−220AC
CASE 221B
PLASTIC
AY WWG
B10x5
KA
• Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
• ESD Rating:
Human Body Model 3B
Machine Model C
1
3
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
B10x5 = Device Code
x
= 3 or 4
KA
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
50 Units/Rail
50 Units/Rail
MBR1035
TO−220
MBR1035G
TO−220
(Pb−Free)
MBR1045
TO−220
50 Units/Rail
50 Units/Rail
MBR1045G
TO−220
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2007 − Rev. 7
MBR1035/D
MBR1035, MBR1045
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
V
V
RRM
V
RWM
DC Blocking Voltage
MBR1035
MBR1045
V
35
45
R
Average Rectified Forward Current
(T = 135°C, Per Device)
C
I
A
A
A
F(AV)
10
10
Peak Repetitive Forward Current,
I
FRM
(Square Wave, 20 kHz, T = 135°C)
C
Non−Repetitive Peak Surge Current
I
150
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
I
1.0
A
°C
RRM
T
−65 to +175
−65 to +175
stg
Operating Junction Temperature (Note 1)
Voltage Rate of Change
T
°C
J
dv/dt
V/ms
(Rated V )
10,000
R
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R
.
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Conditions
Min. Pad
Symbol
Max
2.0
60
Unit
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
R
q
°C/W
JC
JA
Min. Pad
R
q
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical
Max
Unit
Instantaneous Forward Voltage (Note 2)
v
V
F
(i = 10 Amps, T = 125°C)
−
−
−
0.55
0.67
0.78
0.57
0.72
0.84
F
j
(i = 20 Amps, Tj = 125°C)
F
(i = 20 Amps, Tj = 25°C)
F
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
i
mA
R
−
−
5.3
0.008
15
0.1
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
MBR1035, MBR1045
100
100
70
T = 150°C
J
T = 150°C
J
70
50
100°C
25°C
100°C
50
25°C
30
20
30
20
10
7.0
5.0
10
7.0
5.0
3.0
2.0
3.0
2.0
1.0
1.0
0.7
0.5
0.7
0.5
0.3
0.2
0.3
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
1.0
1.2
1.4
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
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3
MBR1035, MBR1045
200
100
10
T = 150°C
J
125°C
100°C
100
70
1.0
0.1
75°C
50
25°C
0.01
30
20
0.001
0
5.0
10
15
20
25
30
35
40
45
50
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V , REVERSE VOLTAGE (VOLTS)
R
NUMBER OF CYCLES AT 60 Hz
Figure 3. Maximum Reverse Current
Figure 4. Maximum Surge Capability
16
14
20
15
RATED VOLTAGE APPLIED
RATED VOLTAGE APPLIED
I
I
I
PK
PK
+ pꢀ(RESISTIVEꢀLOAD)
+ pꢀ(RESISTIVEꢀLOAD)
12
I
AV
AV
10
I
I
SQUARE
WAVE
SQUARE
WAVE
PK
AV
8.0
6.0
4.0
(CAPACITIVEꢀLOAD)
+ 5
10
5.0
0
10
20
dc
dc
I
PK
2.0 (CAPACITIVEꢀLOAD)
0
+ 20, 10, 5
I
AV
60
110
120
130
140
150
160
0
20
40
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Current Derating, Infinite Heatsink
Figure 6. Current Derating, RqJA = 16°C/W
5.0
4.0
3.0
2.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
dc
RATED VOLTAGE APPLIED
SQUARE
R
= 60°C/W
WAVE
q
JA
SINE WAVE
RESISTIVE LOAD
I
I
PK
AV
+ pꢀ(RESISTIVEꢀLOAD)
I
PK
(CAPACITIVEꢀLOAD)
+ 5
I
AV
SQUARE
WAVE
10
20
dc
T = 150°C
1.0
0
J
I
I
PK
AV
60
(CAPACITIVEꢀLOAD)
+ 20, 10, 5
1.0
0
0
2.0
4.0
6.0
8.0
10
12
14
16
0
20
40
80
100
120
140
160
I
, AVERAGE FORWARD CURRENT (AMPS)
T , AMBIENT TEMPERATURE (°C)
A
F(AV)
Figure 7. Forward Power Dissipation
Figure 8. Current Derating, Free Air
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4
MBR1035, MBR1045
1.0
0.7
0.5
0.3
0.2
P
P
pk
pk
DUTY CYCLE, D = t /t
p 1
PEAK POWER, P , is peak of an
t
p
pk
equivalent square power pulse.
0.1
0.07
0.05
TIME
t
1
DT = P • R [D + (1 − D) • r(t + t ) + r(t ) − r(t )] where:
q
JL
pk
JL
1
p
p
1
DT = the increase in junction temperature above the lead temperature.
JL
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.03
0.02
r(t + t ) = normalized value of transient thermal resistance at time,
p
1
t + t .
1
p
0.01
0.01
0.1
1.0
10
100
1000
t, TIME (ms)
Figure 9. Thermal Response
1500
1000
700
500
MAXIMUM
300
TYPICAL
5.0
200
150
0.05 0.1 0.2
0.5 1.0 2.0
10
20
50
V , REVERSE VOLTAGE (VOLTS)
R
Figure 10. Capacitance
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5
MBR1035, MBR1045
PACKAGE DIMENSIONS
TO−220
PLASTIC
CASE 221B−04
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
F
T
S
Q
INCHES
DIM MIN MAX
MILLIMETERS
MIN
15.11
9.65
4.06
0.64
3.61
4.83
2.79
0.46
12.70
1.14
2.54
2.04
1.14
5.97
0.000
MAX
15.75
10.29
4.82
0.89
3.73
5.33
3.30
0.64
14.27
1.52
3.04
2.79
1.39
6.48
1.27
A
B
C
D
F
0.595
0.380
0.160
0.025
0.142
0.190
0.110
0.018
0.500
0.045
0.100
0.080
0.045
0.235
0.000
0.620
0.405
0.190
0.035
0.147
0.210
0.130
0.025
0.562
0.060
0.120
0.110
0.055
0.255
0.050
4
A
U
1
3
G
H
J
H
K
K
L
Q
R
S
T
L
R
D
U
J
G
STYLE 1:
PIN 1. CATHODE
2. N/A
3. ANODE
4. CATHODE
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
MBR1035/D
相关型号：
MBR1045-G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-220AC, LEAD FREE, PLASTIC PACKAGE-2
SENSITRON
MBR1045-HE3/45
DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY
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