MB4S [ONSEMI]
0.5A 桥式整流器;
| 型号： | MB4S |
| 厂家： | 
ONSEMI |
| 描述： | 0.5A 桥式整流器 IOT 二极管 |
| 文件： | 总5页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Bridge Rectifiers, 0.5 A
MB1S-MB8S
Description
SOIC4 W
The MB family of bridge rectifiers is a 0.5 A rectifier family that
achieves high surge current absorption within a very small foot print.
Within its small 35 mm form factor, the MB family shines in its surge
CASE 751EP
2
MARKING DIAGRAM
capability. In order to absorb high surge currents, the design supports
2
2
a 35 A I
rating and a 5.0 A Sec I T rating. Devices in the family
FSM
are also rated to breakdown voltages of up to 1000 V. These features
make the MB family ideal for small power supplies that need a little
extra surge capability.
−
+
$Y&Z&3
MB*S
For higher I
current ratings, lower profile packaging, or lower
FAV
V values, explore the onsemi MDB family of bridge rectifiers. For
F
improved V and efficiency values in the MB package or even higher
F
surge capability, ask about onsemi’s pending MBxSV family.
Features
• Low−Leakage
• Surge Overload Rating: 35 A peak
• Ideal for Printed Circuit Board
• UL Certified: UL #E258596
• This Device is Pb−Free and RoHS Compliant
$Y
&Z
&3
MB*S
*
= Logo
= Assembly Plant Code
= 3−Digit Data Code (Year & Week)
= Specific Device Code
= 1/2/4/6/8
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
August, 2021 − Rev. 5
MB8S/D
MB1S−MB8S
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted)
A
Symbol
Parameter
MB1S
MB2S
MB4S
MB6S
MB8S
Unit
V
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
100
200
400
600
800
V
RRM
V
70
140
200
280
400
0.5
35
420
600
560
800
V
V
A
A
RMS
V
DC Reverse Voltage (Rated V )
100
R
R
Average Rectified Forward Current at T = 50°C
I
A
F(AV)
I
Non−Repetitive Peak Forward Surge Current:
8.3 ms Single Half−Sine−Wave
FSM
T
Storage Temperature Range
−55 to +150
−55 to +150
°C
STG
T
J
Operating Junction Temperature Range
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
W
P
D
Power Dissipation
1.4
Thermal Resistance, Junction to Ambient, per Leg (Note 1)
Thermal Resistance, Junction to Lead, per Leg (Note 1)
°C/W
85
20
R
θ
JA
°C/W
R
θ
JL
1. Device mounted on PCB with 0.5 × 0.5 inch (13 × 13 mm) lead length.
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Value
1.0
Unit
V
V
I
Forward Voltage, per Bridge
Reverse Current, per Leg at Rated V
I = 0.5 A
F
F
T = 25°C
A
mA
5.0
R
R
T = 125°C
A
0.5
mA
2
2
2
I t
I t Rating for Fusing
A s
t < 8.3 ms
5.0
C
Total Capacitance, per Leg
V
R
= 4.0 V, f = 1.0 MHz
13
pF
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Part Number
MB1S
Top Mark
MB1S
Package
Shipping
SOIC4 W
(Pb−Free)
3,000 / Tape & Reel
MB2S
MB2S
MB4S
MB4S
MB6S
MB6S
MB8S
MB8S
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
MB1S−MB8S
TYPICAL PERFORMANCE CHARACTERISTICS
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Aluminum Substrate
10
T = 125°C
j
Glass
Epoxy
P.C.B
1
0.1
T = 25°C
j
Resistive or Inductive Load
20 40 60 80 100 120 140 160
0.01
0
0
20
40
60
80
100
Ambient Temperature (5C)
Percent of Rated Peak Reverse Voltage (%)
Figure 1. Derating Curve for Output Rectified
Current
Figure 2. Typical Reverse Leakage Characteristics
Per Leg
30
35
T = 40°C
T = 25°C
j
j
30
25
20
Single Half Sine−Wave
f = 1 MHz
= 50 mVp−p
25
20
(JEDEC Method)
V
slg
F = 50 Hz
F = 60 Hz
15
10
5
15
10
5
1 Cycle
0
0
1
10
Number of Cycles
100
0.1
1
10
100 200
Reverse Voltage (V)
Figure 3. Maximum Non−Repetitive Peak Forward
Figure 4. Typical Junction Capacitance Per Leg
Surge Current Per Leg
10
T = 25°C
j
1
0.1
T = 25°C
j
Pulse Width = 300 ms
1% Duty Cycles
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 5. Typical Forward Voltage Characteristics
Per Leg
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC4 W
CASE 751EP
ISSUE O
DATE 30 SEP 2016
0.13 C B A
0.13 C A B
0.10 C
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13753G
SOIC4 W
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
MB4S-E3
DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode
VISHAY
MB4S-E3/30
DIODE 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode
VISHAY
MB4S/30
Bridge Rectifier Diode, 1 Phase, 0.5A, 400V V(RRM), Silicon, TO-269AA, PLASTIC, MBS, 4 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明