LL4148 [ONSEMI]
小信号二极管;
| 型号： | LL4148 |
| 厂家： | 
ONSEMI |
| 描述： | 小信号二极管 信号二极管 |
| 文件： | 总5页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Small Signal Diode
LL4148
Features
• This is a Pb−Free and Halide Free Device
SOD−80
CASE 100AD
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.) (Notes 1 and 2)
A
MARKING DIAGRAM
Symbol
Parameter
Value
100
200
500
1.0
Unit
V
Cathode Band (Black)
V
RRM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Recurrent Peak Forward Current
I
mA
mA
A
F(AV)
I
f
I
Non−Repetitive Pulse Width = 1.0 s
FSM
Peak Forward
Surge Current
Pulse Width = 1.0 ms
2.0
T
Storage Temperature Range
−65 to +200
−55 to +175
°C
°C
STG
ORDERING INFORMATION
T
J
Operating Junction Temperature
Range
†
Device
LL4148
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 200_C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low−duty−cycle operations.
SOD−80
(Pb−Free/
Halide Free)
2500 /
Tape & Reel
(7″)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.) (Note 3)
A
Symbol
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
Unit
P
D
mW
R
300
°C/W
q
JA
3
3. JEDEC Standard 51−3 method (PCB Board size 76 × 114 × 0.6T mm )
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Breakdown Voltage
Conditions
Min
100
75
−
Max
−
Unit
V
R
V
IR = 100 mA
= 5.0 mA
I
R
−
V
F
Forward Voltage
Reverse Leakage
I = 10 mA
F
1.0
25
50
4.0
4.0
V
I
R
V
R
V
R
V
R
= 20 V
−
nA
mA
pF
ns
= 20 V, T = 150°C
−
A
C
Total Capacitance
= 0, f = 1.0 MHz
−
T
t
rr
Reverse Recovery Time
I = 10 mA, V = 6.0 V (60 mA), I = 1.0 mA, R = 100 W
−
F
R
rr
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
January, 2022 − Rev. 2
LL4148/D
LL4148
TYPICAL PERFORMANCE CHARACTERISTICS
160
120
T = 25°C
A
T = 25°C
A
100
80
150
140
60
130
120
110
40
20
0
1
2
3
5
10
20 30
50
100
10
20
30
50
70
100
I , Reverse Current (mA)
R
V , Reverse Voltage (V)
R
Figure 2. Reverse Voltage vs. Reverse Current
R − 10 to 100 A
Figure 1. Reverse Voltage vs. Reverse Current
I
BV − 1.0 to 100 mA
550
500
750
700
T = 25°C
A
T = 25°C
A
450
400
650
600
350
300
250
550
500
450
1
2
3
5
10
20 30
50
100
0.1
0.2 0.3 0.5
1
2
3
5
10
I , Forward Current (mA)
F
I , Forward Current (mA)
F
Figure 3. Forward Voltage vs. Forward Current
Figure 4. Forward Voltage vs. Forward Current
VF − 1 to 100 mA
VF − 0.1 to 10 mA
900
800
700
1.6
T = 25°C
A
Typical
1.4
1.2
T = −40°C
A
600
500
1.0
0.8
0.6
T = 25°C
A
T = 65°C
A
400
300
10
20 30
50
100
200 300 500 800
0.01
0.03
0.1
0.3
1
3
10 20
I , Forward Current (mA)
F
I , Forward Current (mA)
F
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 5. Forward Voltage vs. Forward Current
VF − 0.01 to 20 mA (−40 to +655C)
VF − 10 to 800 mA
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2
LL4148
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
0.90
0.85
4.0
T = 25°C
T = 25°C
A
A
3.5
3.0
2.5
2.0
1.5
1.0
0.80
0.75
0
2
4
6
8
10
12
14
10
20
30
40
50
60
V , Reverse Voltage (V)
R
I , Reverse Recovery Current (mA)
rr
Figure 8. Reverse Recovery Time vs.
Reverse Recovery Current
Figure 7. Total Capacitance
500
400
300
200
500
400
300
200
SOD−80
I
− Average Rectified Current − mA
F(AV)
100
0
100
0
0
50
100
150
0
50
100
150
200
T , Ambient Temperature (5C)
A
Temperature (5C)
Figure 9. Average Rectified Current (IF(AV)) vs.
Ambient Temperature (TA)
Figure 10. Power Derating Curve
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MiniMELF / SOD−80
CASE 100AD
ISSUE O
DATE 30 APR 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON79582E
MINIMELF / SOD−80
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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TECHNICAL PUBLICATIONS:
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WTE
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