KST10MTF [ONSEMI]
NPN 外延硅晶体管;型号: | KST10MTF |
厂家: | ONSEMI |
描述: | NPN 外延硅晶体管 晶体管 |
文件: | 总5页 (文件大小:267K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2014
KST10
NPN Epitaxial Silicon Transistor
Features
3
• VHF / UHF Transistor
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
Marking
Package
Packing Method
KST10MTF
3E
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
Parameter
Value
30
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Storage Temperature
VCEO
25
V
VEBO
3
V
TSTG
150
°C
Note:
1. Refer to KSP10 for graphs.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
350
Unit
mW
Power Dissipation
Derate Above 25°C
2.8
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
357
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
KST10 Rev. 1.1.0
www.fairchildsemi.com
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Conditions
IC = 100 μA, IE = 0
IC = 1 mA, IB = 0
Min.
30
Max.
Unit
V
25
V
IE = 10 μA, IC = 0
3
V
VCB = 25 V, IE = 0
VEB = 2 V, IC = 0
100
100
nA
nA
IEBO
Emitter Cut-Off Current
hFE
DC Current Gain
VCE = 10 V, IC = 4 mA
IC = 4 mA, IB = 0.4 mA
VCE = 10 V, IC = 4 mA
60
VCE(sat) Collector-Emitter Saturation Voltage
0.5
V
V
VBE(on)
Base-Emitter On Voltage
0.95
VCE = 10 V, IC = 4 mA,
f = 100 MHz
fT
Current Gain Bandwidth Product
650
MHz
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Cob
Crb
Output Capacitance
0.7
0.65
9
VCB = 10 V, IE = 0,
f = 1 MHz
Common-Base Feedback Capacitance
Collector-Base Time Constant
pF
VCB = 10 V, IC = 4 mA,
f = 31.8 MHz
Cc·rbb´
pF
© 2002 Fairchild Semiconductor Corporation
KST10 Rev. 1.1.0
www.fairchildsemi.com
2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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