KSD1588YTU [ONSEMI]
NPN外延硅晶体管;
| 型号： | KSD1588YTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN外延硅晶体管 局域网 放大器 晶体管 |
| 文件： | 总5页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
KSD1588
Low Frequency Power Amplifier
•
•
Low Speed Switching
Complement to KSB1097
TO-220F
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
100
V
V
CBO
CEO
EBO
60
7
V
I
I
I
7
15
A
C
A
CP
B
3.5
A
P
P
T
T
Collector Dissipation (T =25°C)
2
W
W
°C
°C
C
a
Collector Dissipation (T =25°C)
30
C
C
Junction Temperature
150
-55 ~ 150
J
Storage Temperature
STG
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Max.
10
Units
µA
I
Collector Cut-off Current
V
V
= 80V, I = 0
CBO
CB
EB
E
I
Emitter Cut-off Current
*DC Current Gain
= 5V, I = 0
10
µA
EBO
C
h
h
V
V
= 1V, I = 3A
40
20
200
FE1
FE2
CE
CE
C
= 1V, I = 5A
C
V
(sat)
(sat)
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
I
I
= 5A, I = 0.5A
0.5
1.5
V
V
CE
C
C
B
V
= 5A, I = 0.5A
BE
B
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
Classification
FE1
Classification
R
O
Y
h
40 ~ 80
80 ~ 120
100 ~ 200
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
1.0
1000
100
10
IB = 18mA
VCE = 1V
0.9
IB = 16mA
0.8
IB = 14mA
0.7
IB = 12mA
0.6
IB = 10mA
0.5
IB = 8mA
0.4
IB = 6mA
0.3
IB = 4mA
0.2
IB = 2mA
0.1
IB = 0
1
0.001
0.01
0.1
1
10
0
5
10
15
20
25
30
35
40
45
50
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
100
10
10
Ic = 10 IB
1
VBE(sat)
1
0.1
0.1
0.01
VCE(sat)
0.01
0.001
0.01
0.1
1
10
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Safe OPerating Area
160
140
120
100
80
40
35
30
25
20
15
10
5
60
40
20
0
0
0
25
50
75
100
125
150
175
200
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
TC[oC], CASE TEMPERATURE
Figure 5. Derating Curve Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE "F"
SEE NOTE "F"
6.88
6.48
1 X 45°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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