KSC5502DTTU [ONSEMI]
NPN 三扩散平面硅晶体管;
| 型号： | KSC5502DTTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN 三扩散平面硅晶体管 晶体管 |
| 文件： | 总13页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2014
KSC5502D / KSC5502DT
NPN Triple Diffused Planar Silicon Transistor
4
D-PAK
Features
Equivalent Circuit
C
• High Voltage Power Switch Switching Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
1
4
TO-220
B
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : D-PAK or TO-220
E
1
1.Base 2,4.Collector 3.Emitter
Ordering Information
Part Number
KSC5502DTM
KSC5502DTTU
Top Mark
Package
TO-252 3L (DPAK)
TO-220 3L
Packing Method
Tape and Reel
Rail
C5502D
C5502D
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)(1)
Base Current (DC)
1200
600
V
12
V
2
A
ICP
4
A
IB
1
2
A
IBP
Base Current (Pulse)(1)
A
TJ
Junction Temperature
150
°C
°C
mJ
TSTG
EAS
Storage Temperature Range
Avalanche Energy (TJ = 25°C)
-65 to 150
2.5
Note:
1. Pulse test: Pulse width = 5 ms, duty cycle ≤ 10%.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
KSC5502D KSC5502DT
Symbol
Parameter
Unit
(D-PAK)
87.83
1.42
(TO-220)
118.16
1.06
PC
Collector Dissipation (TC = 25°C)
W
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
°C/W
°C/W
111.0
62.5
Maximum Lead Temperature for Soldering Purpose:
1/8 inch from Case for 5 seconds
TL
270
°C
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 1 mA, IE = 0
1200 1350
V
V
V
Collector-Emitter Breakdown
BVCEO
BVEBO
IC = 5 mA, IB = 0
600
750
Voltage
Emitter-Base Breakdown Voltage IE = 500 μA, IC = 0
12.0
13.7
TC = 25°C
100
500
100
500
10
ICES
Collector Cut-off Current
VCES = 1200 V, VBE = 0
μA
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
ICEO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
VCE = 600 V, IB = 0
VEB = 12 V, IC = 0
VCE = 1 V, IC = 0.2 A
μA
μA
15
8
28
40
18
4.0
3.0
12
6
6.4
hFE
DC Current Gain
VCE = 1 V, IC = 1 A
4.7
20
30
VCE = 2.5 V,
IC = 0.5 A
12
0.31
0.54
0.15
0.23
0.40
1.30
0.77
0.60
0.83
0.70
385
60
0.80
1.10
0.60
1.00
1.50
3.00
1.00
0.90
1.20
1.00
500
IC = 0.2 A, IB = 0.02 A
IC = 0.4 A, IB = 0.08 A
IC = 1 A, IB = 0.2 A
Collector-Emitter Saturation
Voltage
VCE(sat)
V
V
IC = 0.4 A, IB = 0.08 A
IC = 1 A, IB = 0.2 A
VBE(sat) Base-Emitter Saturation Voltage
Cib
Cob
fT
Input Capacitance
VEB = 8 V, IC = 0, f = 1 MHz
VCB = 10 V, IE = 0, f = 1 MHz
IC = 0.5 A,VCE = 10 V
pF
pF
Output Capacitance
100
Current Gain Bandwidth Product
11
MHz
TC = 25°C
0.75
0.59
0.80
0.64
0.90
1.20
1.30
1.50
IF = 0.2 A
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
VF
Diode Forward Voltage
V
IF = 0.4 A
IF = 1 A
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
2
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min Typ. Max. Unit
IF = 0.2 A
IF = 0.4 A
IF = 1 A
650
Diode Froward Recovery
Time (di/dt=10 A/μs)
tfr
740
785
7.2
ns
at 1 μs
at 3 μs
at 1 μs
at 3 μs
IC = 0.4 A, IB1 = 80 mA,
VCC = 300 V
1.8
VCE(DSAT) Dynamic Saturation Voltage
V
18.0
6.0
IC = 1 A, IB1 = 200 mA,
VCC = 300 V
Resistive Load Switching (D.C < 10%, Pulse Width = 20 s)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
175
185
2.1
350
3.0
450
5.0
tON
tOFF
tON
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
ns
μs
ns
μs
IC = 0.4 A, IB1 = 80 mA,
IB2 = 0.2 A, VCC = 300 V,
RL = 750 Ω
2.6
240
310
3.7
IC = 1 A, IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
tOFF
RL = 300 Ω
4.5
Inductive Load Switching (VCC = 15 V)
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
TC = 25°C
TC = 125°C
1.2
1.5
2.0
200
350
4.50
250
600
tSTG
tF
Storage Time
Fall Time
μs
ns
ns
μs
ns
ns
IC = 0.4 A, IB1 = 80 mA,
IB2 = 0.2 A, VZ = 300 V,
LC = 200 H
90
65
185
145
3.30
3.75
90
tC
Cross-Over Time
Storage Time
Fall Time
tSTG
tF
IC = 0.8 A, IB1 = 160 mA,
IB2 = 160 mA,
VCC = 300 V,
160
300
570
LC = 200 H
tC
Cross-over Time
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
3
Typical Performance Characteristics
3
1A
900mA
800mA
VCE=1V
700mA
600mA
500mA
100
10
1
TJ=125o
C
2
400mA
TJ=25o
C
300mA
200mA
IB=100mA
1
0
0
1
2
3
4
5
6
7
1m
10m
100m
1
VCE[V], COLLECTOR EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT)
Figure 1. Static Characteristic
Figure 2. DC Current Gain
IC=10IB
IC=5IB
10
10
1
1
TJ=125o
C
TJ=125o
C
TJ=25o
C
TJ=25o
C
0.1
0.1
1m
10m
100m
1
1m
10m
100m
1
IC(A), COLLECTOR CURRENT
IC(A), COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
2
10
TJ=25o
C
IC=10IB
2.0A
1.5A
1.0A
1
1
TJ=25o
C
0.4A
IC=0.2A
TJ=125o
C
0
1m
0.1
1m
10m
100m
1
10m
100m
1
IB[A], BASE CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Typical Collector Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
10
10
IC=5IB
1
1
TJ=25o
C
TJ=25o
C
TJ=125o
C
TJ=125o
C
0.1
1m
0.1
1m
10m
100m
1
10m
100m
1
IC[A], COLLECTOR CURRENT
IFD[A], FORW ARD CURRENT
Figure 7. Base-Emitter Saturation Voltage
Figure 8. Diode Forward Voltage
1000
2000
F=1M Hz
IC=5IB1=2IB2
VCC=300V
PW=20μ s
Cib
1000
900
800
700
600
TJ=125o
C
500
400
100
Cob
300
200
TJ=25o
C
100
10
0.3
0.5
1
1.5
2
2.5
3
1
10
100
IC[A], COLLECTOR CURRENT
REVERSE VOLTAGE[V]
Figure 9. Collector Output Capacitance
Figure 10. Resistive Switching Time, ton
5
4.5
2000
IC=5IB1=5IB2
Vc=300V
PW =20μs
4
IC=5IB1=2IB2
VCC=300V
PW =20μs
3.5
1000
900
800
3
TJ=125o
C
700
2.5
600
500
2
400
300
TJ=25o
C
TJ=125o
C
TJ=25o
C
1.5
200
1
0.3
100
0.3
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 11. Resistive Switching Time, toff
Figure 12. Resistive Switching Time, ton
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
5
Typical Performance Characteristics (Continued)
3
7
6.5
IC=5IB1=2IB2
VCC=15V
IC=5IB1=5IB2
6
Vc=300V
2.5
VZ=300V
5.5
PW =20μs
LC=200μ H
5
4.5
TJ=125o
C
2
TJ=125o
C
4
3.5
3
TJ=25o
C
1.5
TJ=25o
C
2.5
1
2
0.3
0.3
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 13. Resistive Switching Time, toff
Figure 14. Inductive Switching Time, tSTG
110
600
550
IC=5IB1=2IB2
100
500
450
IC=5IB1=2IB2
VCC=15V
VCC=15V
VZ=300V
90
VZ=300V
LC=200μH
LC=200μH
400
350
80
TJ=125o
C
300
250
70
60
TJ=25o
C
TJ=125o
C
200
150
TJ=25o
C
50
40
100
0.3
0.5
1
1.5
2
2.5
3
0.3
0.5
1
1.5
2
2.5
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 15. Inductive Switching Time, tF
Figure 16. Inductive Switching Time, tc
5
1000
900
800
IC=5IB1=5IB2
4.5
IC=5IB1=5IB2
700
VCC=15V
VCC=15V
600
VZ=300V
VZ=300V
500
4
LC=200μH
LC=200μH
TJ=125o
C
400
TJ=125o
C
3.5
300
200
TJ=25o
C
3
TJ=25o
C
2.5
100
90
80
70
60
2
50
0.3
0.5
1
1.5
2
2.5
3
0.3
0.5
1
1.5
2
2.5
3
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 17. Inductive Switching Time, tSTG
Figure 18. Inductive Switching Time, tF
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
6
Typical Performance Characteristics (Continued)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2000
IC=2IB2
IC=5IB1=5IB2
VCC=15V
VCC=15V
VZ=300V
LC=200μH
TJ=125o
C
VZ=300V
1000
900
800
LC=200μH
IC=0.8A
700
TJ=25o
TJ=125o
C
600
500
C
TJ=25o
C
400
300
200
IC=0.4A
100
0.3
4
5
6
7
8
9
10
11
12
13
14
0.5
1
1.5
2
2.5
3
hFE, FORCED GAIN
IC[A], COLLECTOR CURRENT
Figure 19. Inductive Switching Time, tc
Figure 20. Inductive Switching Time, tSTG
200
IC=2IB2
IC=2IB2
VCC=15V
VZ=300V
LC=200μ H
VCC=15V
VZ=300V
LC=200μ H
80
60
40
IC=0.8A
160
TJ=25o
C
TJ=25o
TJ=125o
C
IC=0.8A
TJ=125o
C
C
120
IC=0.4A
IC=0.4A
80
4
5
6
7
8
9
10
11
12
13
14
4
5
6
7
8
9
10
11
12
13
14
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 21. Inductive Switching Time, tF
Figure 22. Inductive Switching Time, tc
10
140
130
120
110
100
TC=25o
C
1ms
50μ s
5ms
DC
1
90
TO-220
80
70
D-PAK
60
50
40
30
20
10
0
0.1
0.01
10
100
1000
0
25
50
75
100
125
150
175
200
TC(oC), CASE TEMPERATURE
VCE[A], COLLECTOR EMITTER VOLTAGE
Figure 23. Forward Bias Safe Operating Area
Figure 24. Power Derating
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
7
Typical Performance Characteristics (Continued)
10
10
1
0.5
0.2
0.1
1
0.1
0.05
0.02
0.5
0.2
0.01
1E-3
1E-4
1E-5
1E-6
0.01
0.1
0.05
0.1
0.02
0.01
Single
0.01
Single
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration
t, Rectangular Pulse Duration
Figure 25. ZoJC, Transient Thermal Impedance
(D-PAK)
Figure 26. ZoJA, Transient Thermal Impedance
(D-PAK)
10
10
1
0.5
0.2
1
0.1
0.1
0.05
0.02
0.5
0.2
0.1
0.01
0.01
0.1
0.05
0.02
0.01
1E-3
1E-4
Single
0.01
Single
1E-5
1E-3
1E-5
1E-6
1E-6
1E-4
1E-3
0.01
0.1
1
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration
t, Rectangular Pulse Duration
Figure 27. ZoJC, Transient Thermal Impedance
(TO-220)
Figure 28. ZoJA, Transient Thermal Impedance
(TO-220)
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
8
Physical Dimensions
Figure 29. TO-252 (D-PAK), MOLDED, 3-LEAD, OPTION AA & AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO252A03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO252A03.pdf.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
9
Physical Dimensions
Figure 30. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO220B03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220B03.pdf.
© 2000 Fairchild Semiconductor Corporation
KSC5502D / KSC5502DT Rev. 1.1.0
www.fairchildsemi.com
10
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPowerA
AX-CAP®*
F-PFSA
®*
FRFET®
®
Global Power ResourceSM
GreenBridgeA
Green FPSA
Green FPSA e-SeriesA
GmaxA
TinyBoost®
TinyBuck®
TinyCalcA
TinyLogic®
TINYOPTOA
TinyPowerA
TinyPWMA
TinyWireA
TranSiCA
PowerTrench®
PowerXS™
Programmable Active DroopA
QFET®
BitSiCA
Build it NowA
CorePLUSA
CorePOWERA
CROSSVOLTA
CTLA
QSA
GTOA
IntelliMAXA
Quiet SeriesA
RapidConfigureA
A
Current Transfer LogicA
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMaxA
ISOPLANARA
Making Small Speakers Sound Louder
and Better™
Saving our world, 1mW/W/kW at a time™
SignalWiseA
SmartMaxA
TriFault DetectA
TRUECURRENT®*
ꢀSerDesA
MegaBuckA
ESBCA
MICROCOUPLERA
MicroFETA
SMART STARTA
Solutions for Your SuccessA
SPM®
®
MicroPakA
Fairchild®
UHC®
MicroPak2A
Fairchild Semiconductor®
FACT Quiet SeriesA
FACT®
STEALTHA
MillerDriveA
Ultra FRFETA
UniFETA
VCXA
VisualMaxA
VoltagePlusA
XS™
SuperFET®
MotionMaxA
mWSaver®
SuperSOTA-3
FAST®
SuperSOTA-6
SuperSOTA-8
SupreMOS®
OptoHiTA
FastvCoreA
FETBenchA
FPSA
OPTOLOGIC®
OPTOPLANAR®
SyncFETA
Sync-Lock™
❺
™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I68
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