KSC2383OTA [ONSEMI]
NPN 外延硅晶体管;NPN Epitaxial Silicon
Transistor
KSC2383
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.)
A
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Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
Unit
V
V
CBO
V
CEO
V
EBO
160
160
V
6
V
I
C
1
0.5
A
I
B
Base Current
A
TO−92 3 LF
CASE 135AM
T
Junction Temperature
Storage Temperature
150
°C
°C
J
T
−55 to +150
STG
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
AC2
383X
YWW
(Values are at T = 25°C unless otherwise noted.) (Note 1)
A
Symbol
Parameter
Power Dissipation
Value
900
7.2
Unit
mW
P
D
Derate Above 25_C
mW/°C
°C/W
R
Thermal Resistance,
138
θ
JA
Junction−to−Ambient
1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
1: Emitter
2: Collector
3: Base
1
2
3
A
= Assembly Code
= Device Code
= O / Y
C2383
X
YWW
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
KSC2383OTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
KSC2383YTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2021 − Rev. 3
KSC2383/D
KSC2383
ELECTRICAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Collector Cut−Off Current
Emitter Cut−Off Current
Conditions
= 150 V, I = 0
Min.
−
Typ.
−
Max.
1
Unit
mA
mA
V
I
V
V
CBO
CB
E
I
= 6 V, I = 0
−
−
1
EBO
EB
C
BV
h
Collector−Emitter Breakdown Voltage
DC Current Gain
I
C
= 10 mA, I = 0
160
60
−
−
−
CEO
B
V
CE
= 5 V, I = 200 mA
−
320
1.5
0.75
−
FE
C
V
CE
(sat)
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I
C
= 500 mA, I = 50 mA
−
V
V
B
V
BE
(on)
V
CE
V
CE
V
CB
= 5 V, I = 5 mA
0.45
20
−
−
C
f
T
= 5 V, I = 200 mA
100
−
MHz
pF
C
C
= 10 V, I = 0, f = 1 MHz
20
ob
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
R
O
Y
h
FE
60 ~ 120
100 ~ 200
160 ~ 320
TYPICAL PERFORMANCE CHARACTERISTICS
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Emitter Common
T = 25°C
Emitter Common
A
V
CE
= 10 V
I
B
= 15 mA
I
B
= 10 mA
100
10
1
I
B
= 6 mA
V
CE
= 5 V
I
B
= 4 mA
I
B
= 3 mA
I
B
= 2.5 mA
I
= 2 mA
B
I
= 1.5 mA
B
I
= 1 mA
= 0.5 mA
B
I
B
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
100
1000
V
CE
, Collector−Emitter Voltage (V)
I , Controller Current (mA)
C
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1000
100
1
Emitter Common
T = 25°C
Emitter Common
T = 25°C
A
A
0.1
I
I
/ I = 10
B
C
V
V
= 10 V
= 5 V
CE
/ I = 5
B
C
0.01
CE
V
CE
= 1 V
10
0.001
1
10
100
1000
100
1000
I , Controller Current (mA)
C
I , Controller Current (mA)
C
Figure 3. DC Current Gain
Figure 4. Collector−Emitter Saturation Voltage
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2
KSC2383
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.0
0.8
0.6
0.4
0.2
0.0
1000
Emitter Common
Emitter Common
f = 1 MHz
T = 25°C
A
I
C
/ I = 10
B
100
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1
10
100
1000
V
BE
, Base−Emitter Voltage (V)
V
CB
, Collector Base Voltage (V)
Figure 5. Base−Emitter On Voltage
Figure 6. Collector Output Capacitance
1000
100
10
10
1
Emitter Common
T = 25°C
I
Max. (Pulse)
1 ms
C
A
10 ms
100 ms
0.1
I
Max. = 1 A
C
DC T = 25°C
A
0.01
1
0.001
1
10
100
1000
1
10
100
1000
V
CE
, Collector−Emitter Voltage (V)
I , Collector Current (A)
C
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE B
DATE 14 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14058G
TO−92 3 8.0X4.9 (LEADFORMED)
PAGE 1 OF 1
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FAIRCHILD
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