KSB546YTU [ONSEMI]

PNP外延硅晶体管;
KSB546YTU
型号: KSB546YTU
厂家: ONSEMI    ONSEMI
描述:

PNP外延硅晶体管

局域网 放大器 晶体管
文件: 总5页 (文件大小:242K)
中文:  中文翻译
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KSB546  
TV Vertical Deflectio n Output  
Collector-Base Voltage : V  
= -200V  
CBO  
Collector Current : l = -2A  
C
Collector Dissipation : P = 25W (T =25°C)  
C
C
Complement to KSD401  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 200  
- 150  
- 5  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)Y  
V
CEO  
EBO  
V
I
- 2  
A
C
P
Collector Dissipation (T =25°C)  
25  
W
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
- 200  
- 150  
- 5  
Typ.  
Max. Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
= - 500µA, I = 0  
V
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= - 10mA, I = 0  
B
I = - 500uA, I = 0  
E
C
I
V
= - 150V, I = 0  
- 50  
240  
- 1  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
= - 10V, I = - 0.4A  
40  
FE  
E
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
I
= - 500mA, I = - 50mA  
V
CE  
C
B
f
V
= - 10V, I = - 0.4A  
5
MHz  
T
CE  
C
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
-1.0  
-0.9  
1000  
100  
10  
VCE = -10V  
IB = -8mA  
-0.8  
IB = -7mA  
-0.7  
IB = -6mA  
IB = -5mA  
IB = -4mA  
-0.6  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
-0.0  
IB = -3mA  
IB = -2mA  
IB = -1mA  
-0  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-0.01  
-0.1  
-1  
-10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
1000  
100  
10  
-10  
IC = 10 IB  
VBE(sat)  
VCE(sat)  
f=1MHz  
IE=0  
-1  
-0.1  
-0.01  
-0.01  
-0.1  
-1  
-10  
-1  
-10  
-100  
IC[A], COLLECTOR CURRENT  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Collector Output Capacitance  
-10  
40  
35  
30  
25  
20  
15  
10  
5
1. Tc=25  
2. *single pulse  
*1ms  
Thermal limitation  
-1  
S/B limitation  
S/B limitation  
-0.1  
0
-10  
-100  
0
25  
50  
75  
100  
125  
150  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
Figure 6. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
SUPPLIER "B" PACKAGE  
SHAPE  
‘ꢀꢁꢂꢂ  
3.50  
10.67  
9.65  
SUPPLIER "A" PACKAGE  
SHAPE  
E
3.40  
2.50  
16.30  
13.90  
IF PRESENT, SEE NOTE "D"  
E
16.51  
15.42  
9.40  
8.13  
E
1
2
3
4.10  
2.70  
[2.46]  
C
14.04  
12.70  
2.13  
2.06  
FRONT VIEWS  
H
4.70  
4.00  
1.62  
1.42  
1.62  
1.10  
2.67  
2.40  
"A1"  
8.65  
7.59  
1.00  
0.55  
SEE NOTE "F"  
ꢃƒ  
ꢄƒ  
ꢃƒ  
ꢄƒ  
6.69  
6.06  
OPTIONAL  
CHAMFER  
E
14.30  
11.50  
NOTE "I"  
BOTTOM VIEW  
NOTES:  
A) REFERENCE JEDEC, TO-220, VARIATION AB  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS COMMON TO ALL PACKAGE  
SUPPLIERS EXCEPT WHERE NOTED [ ].  
D) LOCATION OF MOLDED FEATURE MAY VARY  
(LOWER LEFT CORNER, LOWER CENTER  
AND CENTER OF THE PACKAGE)  
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.  
F) "A1" DIMENSIONS AS BELOW:  
SINGLE GAUGE = 0.51 - 0.61  
DUAL GAUGE = 1.10 - 1.45  
G) DRAWING FILE NAME: TO220B03REV9  
H
PRESENCE IS SUPPLIER DEPENDENT  
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES  
IN HEATSINK.  
0.60  
0.36  
2.85  
2.10  
BACK VIEW  
SIDE VIEW  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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