KA5H0280RYDTU [ONSEMI]
2A/800V 100KHz Power Switch, TO-220F 4L, 1000-RAIL;型号: | KA5H0280RYDTU |
厂家: | ONSEMI |
描述: | 2A/800V 100KHz Power Switch, TO-220F 4L, 1000-RAIL 局域网 开关 |
文件: | 总16页 (文件大小:261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Is Now Part of
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.fairchildsemi.com
KA5x02xx-SERIES
KA5H0265RC, KA5M0265R, KA5L0265R,
KA5H02659RN/KA5M02659RN, KA5H0280R,
KA5M0280R
Fairchild Power Switch(FPS)
Features
Description
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current (Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM IC. Included
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver, thermal shut down protection, over voltage
protection, and temperature compensated precision current
sources for loop compensation and fault protection circuitry-
• Internal High Voltage Sense FET
• Auto-Restart Mode
compared to discrete MOSFET and controller or R
CC
switching converter solution. The Fairchild Power Switch(FPS)
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
TO-220F-4L
8-DIP
TO220-5L
1
1
1
1.6.7.8. Drain
2. GND
3. Vcc
4. FB
5. NC
1. Drain
2. GND
3. Vcc
4. FB
1. GND
2. Drain
3. Vcc
4. FB
5. S/S
Internal Block Diagram
V
CC
DRAIN
32V
5V
Vref
Internal
bias
SFET
Good
logic
Soft Start
*
OSC
5V
S
R
Q
−
FB
L.E.B
0.1V
2.5R
5µA
1mA
9V
+
1R
+
S
Q
R
GND
−
7.5V
27V
Thermal S/D
OVER VOLTAGE S/D
+
Power on reset
−
* KA5H0265RC
Rev.1.0.4
©2003 Fairchild Semiconductor Corporation
KA5X02XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5x0265xRx
Symbol
Value
Unit
Drain-Gate Voltage (R =1MΩ)
V
650
±30
V
V
GS
DGR
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
V
GS
DM
I
8.0
A
DC
Continuous Drain Current (T =25°C)
I
I
2.0
A
C
D
DC
DC
Continuous Drain Current (T =100°C)
1.3
A
C
D
Single Pulsed Avalanche Energy (2)
E
68
mJ
V
AS
Maximum Supply Voltage
V
30
CC,MAX
Analog Input Voltage Range
V
-0.3 to V
42
V
FB
SD
P
W
D
Total Power Dissipation
Darting
0.33
+160
W/°C
°C
°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
J
T
-25 to +85
A
T
STG
-55 to +150
KA5x0280R
Drain-Gate Voltage (R =1MΩ)
V
800
±30
8.0
2.0
1.3
90
V
V
GS
DGR
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
V
GS
DM
I
A
DC
Continuous Drain Current (T =25°C)
I
I
A
DC
A
DC
C
D
Continuous Drain Current (T =100°C)
C
D
Single Pulsed Avalanche Energy (2)
E
mJ
V
AS
Maximum Supply Voltage
V
30
CC,MAX
Analog Input Voltage Range
V
-0.3 to V
35
V
FB
SD
P
W
D
Total Power Dissipation
Darting
0.28
W/°C
°C
°C
°C
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
T
+160
J
T
-25 to +85
A
T
STG
-55 to +150
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting T = 25°C
j
2
KA5X02XX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
KA5x0265xRx
Drain-Source Breakdown Voltage
BV
DSS
V
V
=0V, I =50µA
650
-
-
-
-
V
GS
DS
D
=Max. Rating, V =0V
GS
50
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
5.0
2.5
550
38
6.0
Ω
DS(ON)
gfs
GS
DS
=50V, I =0.5A
D
1.5
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn on Delay Time
17
td(on)
tr
20
V
=0.5B V , I =1.0A
DSS D
DD
Rise Time
15
(MOSFET switching time is
essentially independent of
operating temperature)
Turn Off Delay Time
td(off)
tf
55
Fall Time
25
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
GS
DS
Qg
-
-
35
=0.5B V
(MOSFET
DSS
switching time is essentially
independent of operating
temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
3
-
-
Gate-Drain (Miller) Charge
12
KA5x0280R
Drain-Source Breakdown Voltage
BV
DSS
V
V
=0V, I =50µA
800
-
-
-
-
V
GS
DS
D
=Max. Rating, V =0V
GS
50
µA
Zero Gate Voltage Drain Current
I
DSS
V
V
=0.8Max. Rating,
DS
-
-
200
µA
=0V, T =125°C
GS
C
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
R
V
V
=10V, I =0.5A
D
-
5.6
2.5
250
52
7.0
Ω
DS(ON)
gfs
GS
DS
=50V, I =0.5A
D
1.5
-
-
-
-
-
-
-
-
S
Ciss
-
-
-
-
-
-
-
V
=0V, V =25V,
DS
GS
Output Capacitance
Coss
Crss
pF
nS
f=1MHz
Reverse Transfer Capacitance
Turn on Delay Time
25
td(on)
tr
21
V
=0.5B V , I =1.0A
DSS D
DD
Rise Time
28
(MOSFET switching time is
essentially independent of
operating temperature)
Turn Off Delay Time
td(off)
tf
77
Fall Time
24
Total Gate Charge
(Gate-Source+Gate-Drain)
V
V
=10V, I =1.0A,
D
=0.5B V (MOSFET
DSS
GS
DS
Qg
-
-
60
switching time is essentially
independent of operating
temperature)
nC
Gate-Source Charge
Qgs
Qgd
-
-
15
20
-
-
Gate-Drain (Miller) Charge
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
R
2.
S = ---
3
KA5X02XX-SERIES
Electrical Characteristics (Control Part) (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max.
Unit
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
V
V
V
=GND
14
15
16
V
V
START
FB
V
=GND
8.2
8.8
9.4
STOP
FB
KA5H0265xRx
KA5H0280R
Initial Accuracy
Initial Accuracy
F
90
61
100
67
110
73
kHz
kHz
OSC
KA5M0265xRx
KA5M0280R
F
OSC
OSC
Initial Accuracy
Frequency Change With Temperature (2)
F
KA5L0265R
45
-
50
55
kHz
%
∆F/∆T
-25°C ≤ Ta ≤ +85°C
±5
±10
KA5H0265xRx
KA5H0280R
Maximum Duty Cycle
Dmax
62
67
72
%
KA5M0265xRx
KA5M0280R
KA5L0265R
Maximum Duty Cycle
Dmax
72
77
82
%
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
SOFT START SECTION
Soft Start Voltage
I
Ta=25°C, 0V ≤ Vfb ≤ 3V
Vfb ≤ 6.5V
0.7
6.9
4
0.9
7.5
5
1.1
8.1
6
mA
V
FB
V
SD
Idelay
Ta=25°C, 5V ≤ Vfb ≤ V
µA
SD
V
4.7
0.8
5.0
1.0
5.3
1.2
V
SS
KA5H0265RC
Soft Start Current
I
mA
SS
REFERENCE SECTION
Output Voltage (1)
Temperature Stability (1)(2)
Vref
Ta=25°C
4.80
-
5.00
0.3
5.20
0.6
V
Vref/∆T
-25°C ≤ Ta ≤ +85°C
mV/°C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
I
OVER
KA5x02659RN
0.79
1.05
0.9
1.2
1.01
1.34
A
A
KA5x0265Rx
KA5x0280R
Peak Current Limit
I
OVER
PROTECTION SECTION
Over Voltage Protection
Thermal Shutdown Temperature (1)
TOTAL DEVICE SECTION
Start-up Current
V
V
≥ 24V
25
27
29
-
V
OVP
CC
T
-
140
160
°C
SD
I
V
V
=14V
-
-
100
7
170
12
µA
START
CC
Operating Supply Current
(Control Part Only)
I
≤ 28
mA
OPR
CC
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
KA5X02XX-SERIES
Typical Performance Characteristics
(These characteristic graphs are normalized at Ta=25°C)
1.2
1.15
1.1
1.2
1.15
1.1
1.05
1.05
Ifb
1
0.95
0.9
Fosc
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25
50
75 100 125 150
- 25
0
25
50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 2. Feedback Source Current
Figure 1. Operating Frequency
1.1
1.2
1.15
1.1
1.05
I
1
over
1.05
Iop
0.95
0.9
1
0.95
0.9
0.85
0.8
0.85
0.8
-25
0
25 50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 4. Peak Current Limit
Figure 3. Operating Supply Current
1.5
1.15
1.1
1.3
1.1
1.05
Istart
Vs tart
1
0.95
0.9
0.9
0.7
0.5
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 6. Start Threshold Voltage
Figure 5. Start up Current
5
KA5X02XX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
1.15
1.15
1.1
1.1
1.05
1.05
Vs top
1
Dmax
1
0.95
0.9
0.95
0.9
0.85
0.85
-25
0
25 50 75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 8. Maximum Duty Cycle
Figure 7. Stop Threshold Voltage
1.2
1.15
1.15
1.1
1.05
1
0.95
0.9
1.1
1.05
Vz
Vsd
1
0.95
0.9
0.85
0.8
0.85
-25
0
25
50
75 100 125 150
-25
0
25
50
75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 10. Shutdown Feedback Voltage
Figure 9. V
CC
Zener Voltage
1.15
1.2
1.15
1.1
1.05
1.1
1.05
Idelay
1
Vovp
1
0.95
0.9
0.95
0.9
0.85
0.8
0.85
-25
0
25 50
Temperature [°C]
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Figure 12. Over Voltage Protection
Figure 11. Shutdown Delay Current
6
KA5X02XX-SERIES
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta=25°C)
1.15
2.5
2
1.1
1.05
1.5
Vs s
1
Rdson
)
(
0.95
0.9
1
0.5
0
0.85
-25
0
25
50
75 100 125 150
-25
0
25 50 75 100 125 150
Temperature [°C]
Temperature [°C]
Figure 14. Static Drain-Source on Resistance
Figure13. Soft Start Voltage
7
KA5X02XX-SERIES
Package Dimensions
TO-220F-4L
8
KA5X02XX-SERIES
Package Dimensions (Continued)
TO-220F-4L(Forming)
9
KA5X02XX-SERIES
Package Dimensions (Continued)
8-DIP
10
KA5X02XX-SERIES
Package Dimensions (Continued)
TO-220-5L
11
KA5X02XX-SERIES
Package Dimensions (Continued)
TO-220-5L(Forming)
12
KA5X02XX-SERIES
Ordering Information
Product Number
Package
TO-220-5L
Marking Code
BV
F
R
DS(on)
DSS
OSC
KA5H0265RCTU
5H0265RC
650V
100kHz
67kHz
50kHz
5Ω
KA5H0265RCYDTU TO-220-5L(Forming)
KA5M0265RTU
TO-220F-4L
5M0265R
5L0265R
650V
650V
5Ω
5Ω
KA5M0265RYDTU
TO-220F-4L(Forming)
KA5L0265RTU
TO-220F-4L
KA5L0265RYDTU
TO-220F-4L(Forming)
Product Number
KA5H0280RTU
Package
TO-220F-4L
Marking Code
BV
F
R
DS(on)
DSS
OSC
5H0280R
800V
800V
100kHz
67kHz
5.6Ω
KA5H0280RYDTU
TO-220F-4L(Forming)
KA5M0280RTU
TO-220F-4L
5M0280R
5.6Ω
KA5M0280RYDTU
TO-220F-4L(Forming)
Product Number
Package
Marking Code
BV
F
R
DS(on)
DSS
650V
650V
OSC
KA5H02659RN
8-DIP
5H02659R
100kHz
67kHz
5Ω
KA5M02659RN
8-DIP
5M02659R
5Ω
TU : Non Forming Type
YDTU : Forming Type
13
KA5X02XX-SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
8/25/03 0.0m 001
Stock#DSxxxxxxxx
2003 Fairchild Semiconductor Corporation
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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