ISL9R860PF2 [ONSEMI]
8A，600V，STEALTH™ 二极管;
| 型号： | ISL9R860PF2 |
| 厂家： | 
ONSEMI |
| 描述： | 8A，600V，STEALTH™ 二极管 局域网 功效 二极管 |
| 文件： | 总7页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISL9R860PF2
8 A, 600 V, STEALTH]
Diode
Description
The ISL9R860PF2 is a STEALTH diode optimized for low loss
performance in high frequency hard switched applications. The
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STEALTH family exhibits low reverse recovery current (I ) and
rr
exceptionally soft recovery under typical operating conditions. This
device is intended for use as a free wheeling or boost diode in power
supplies and other power switching applications. The low I and short
rr
ta phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under which the
diode may be operated without the use of additional snubber circuitry.
Consider using the STEALTH diode with an SMPS IGBT to provide
the most efficient and highest power density design at lower cost.
1
2
1. Cathode
2. Anode
Features
• Stealth Recovery t = 28 ns (@ I = 8 A)
rr
F
• Max Forward Voltage, V = 2.4 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
1
2
• This Device is Pb−Free and is RoHS Compliant
TO−220, 2−Lead
CASE 221AS
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
MARKING DIAGRAM
• SMPS FWD
• Snubber Diode
$Y&Z&3&K
R860PF2
$Y
&Z&3
&K
= ON Semiconductor Logo
= Data Code (Year & Week)
= Lot
R860PF2
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
March, 2019 − Rev. 4
ISL9R860PF2/D
ISL9R860PF2
MAXIMUM RATINGS T = 25°C unless otherwise noted
C
Symbol
Parameter
Rating
600
Units
V
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
RWM
V
600
V
V
R
600
V
I
Average Rectified Forward Current (T = 75°C)
8
A
F(AV)
C
I
Repetitive Peak Surge Current (20 kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
Power Dissipation
16
A
FRM
I
100
A
FSM
P
D
26
W
mJ
°C
°C
E
Avalanche Energy (1 A, 40 mH)
20
AVL
T , T
J
Operating and Storage Temperature Range
−55 to 175
300
STG
T
L
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
OFF STATE CHARACTERISTICS
Instantaneous Reverse Current
Parameter
Test Condition
Min
Typ
Max
Unit
I
R
V
R
= 600 V
T
= 25°C
−
−
−
−
100
1.0
mA
C
T
= 125°C
mA
C
ON STATE CHARACTERISTICS
Instantaneous Forward Voltage
V
F
I = 8 A
F
T
T
= 25°C
−
−
2.0
1.6
2.4
2.0
V
V
C
= 125°C
C
DYNAMIC CHARACTERISTICS
Junction Capacitance
SWITCHING CHARACTERISTICS
C
V
R
= 10 V , I = 0 A
−
30
−
pF
J
F
Reverse Recovery Time
−
−
−
−
−
−
−
−
−
−
−
−
18
21
25
30
−
ns
ns
ns
A
t
I = 1 A, di /dt = 100 A/ms, V = 30 V
F F R
rr
I = 8 A, di /dt = 100 A/ms, V = 30 V
F
F
R
I = 8 A, di /dt = 200 A/μs, V = 390 V,
Reverse Recovery Time
28
t
I
F
C
F
R
rr
T
= 25°C
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
3.2
50
−
rr
−
nC
ns
Q
t
rr
I = 8 A, di /dt = 200 A/μs, V = 390 V,
77
−
F
C
F
R
rr
T
= 125°C
S
Softness Factor (t /t )
3.7
3.4
150
53
−
b
a
Maximum Reverse Recovery Current
Reverse Recovery Charge
−
A
I
rr
−
nC
ns
Q
rr
I = 8 A, di /dt = 600 A/μs, V = 390 V,
Reverse Recovery Time
−
t
rr
F
C
F
R
T
= 125°C
S
Softness Factor (t /t )
2.5
6.5
195
500
−
b
a
Maximum Reverse Recovery Current
Reverse Recovery Charge
−
A
I
rr
−
nC
Q
rr
dI /dt
M
Maximum di/dt during t
−
−
A/ms
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
ISL9R860PF2
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min
−
Typ
Max
Unit
°C/W
°C/W
−
4.8
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
θ
JC
JA
TO−220F
−
70
R
−
θ
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Tube
Reel Size
Tape Width
Quantity
50
ISL9R860PF2
R860PF2
TO−220F−2L
N/A
N/A
TYPICAL CHARACTERISTICS
16
14
12
10
8
100
175°C
150°C
175°C
150°C
125°C
25°C
10
1
125°C
100°C
100°C
6
4
25°C
2
0.1
0
100
200
300
400
500
600
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.5 2.75
V , Forward Voltage [V]
F
V , Reverse Voltage [V]
R
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
90
80
V
= 390 V, T = 125°C
J
V
= 390 V, T = 125°C
J
R
R
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
t
at di /dt = 200 A/ms, 500 A/ms, 800 A/ms
F
b
t
at I = 16 A, 8 A, 4 A
F
b
t
a
at I = 16 A, 8 A, 4 A
F
t
a
at di /dt = 200 A/ms, 500 A/ms, 800 A/ms
F
0
2
4
6
8
10
12
14
16
100
200
300 400
500
600
700 800
900
1000
I , Forward Current [A]
F
di /dt, Current Rate of Change [A/ms]
F
Figure 3. ta and tb Curves vs. Forward Current
Figure 4. ta and tb Curves vs. diF/dt
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3
ISL9R860PF2
TYPICAL CHARACTERISTICS (continued)
14
11
10
9
V
= 390 V, T = 125°C
J
R
di /dt = 800 A/ms
V
= 390 V, T = 125°C
J
F
R
12
10
8
I
F
= 16 A
8
I
F
= 8 A
di /dt = 500 A/ms
F
7
I
F
= 4 A
6
6
5
4
di /dt = 200 A/ms
F
4
2
3
2
0
0
2
4
6
8
10
12
14
16
100
200
300
400
500
600
700 800
900
1000
IF, Forward Current [A]
di /dt, Current Rate of Change [A/ms]
F
Figure 5. Maximum Reverse Recovery Current
vs. Forward Current
Figure 6. Maximum Reverse Recovery Current
vs. diF/dt
350
6
V
= 390 V, T = 125°C
J
R
V
= 390 V, T = 125°C
J
R
300
250
200
150
100
50
I
= 16 A
F
5
4
3
2
1
I
= 16 A
F
I
= 8 A
F
F
I
= 8 A
F
I
= 4 A
400
F
I
= 4 A
500
100
200
300
500
600
700 800
900
1000
100
200
300
400
600
700 800
900 1000
di /dt, Current Rate of Change [A/ms]
F
diF/dt, Current Rate of Change [A/ms]
Figure 7. Reverse Recovery Softness Factor
Figure 8. Reverse Recovery Charge
vs. diF/dt
vs. diF/dt
1200
10
1000
800
600
400
200
0
8
6
4
2
0
0.1
1
10
100
50
75
100
125
150
175
V , Reverse Voltage [V]
R
T , Case Temperature [°C]
C
Figure 9. Junction Capacitance
vs. Reverse Voltage
Figure 10. DC Current Derating Curve
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4
ISL9R860PF2
TYPICAL CHARACTERISTICS (continued)
2.0
1.0
DUTY CYCLE − DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t / t
1
2
PEAK T = P
x Z
J
x R + T
q
JA A
SINGLE PULSE
q
A
J
DM
0.001
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
R
CONTROL di /dt t
G
F
1
L
AND t CONTROL I
2
F
di
F
t
rr
I
F
dt
t
t
b
a
DUT
CURRENT
SENSE
0
R
G
+
0.25 I
V
RM
V
DD
GE
−
MOSFET
t
I
RM
1
t
2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1 A
L = 40 Mh
R < 0.1 W
V
E
Q
= 50 V
DD
2
= 1 / 2LI [V
/ (V
> DUT V
− V )]
)
AVL
R(AVL)
R(AVL)
DD
V
I
AVL
= IGBT (BV
LR
1
CES
R(AVL)
+
CURRENT
SENSE
I
L
L
Q1
V
DD
IV
DUT
−
t
t
t
2
t
0
1
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage Waveforms
STEALTH is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67438E
TO−220 FULLPACK, 2−LEAD / TO−220F−2FS
PAGE 1 OF 1
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