HGTG12N60C3D [ONSEMI]
24A，600V，UFS 串联 N 沟道 IGBT，带防并联 Hyperfast 二极管;
| 型号： | HGTG12N60C3D |
| 厂家： | 
ONSEMI |
| 描述： | 24A，600V，UFS 串联 N 沟道 IGBT，带防并联 Hyperfast 二极管 局域网 栅 瞄准线 双极性晶体管 功率控制 二极管 |
| 文件： | 总9页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
C
E
G
24 A, 600 V
E
C
HGTG12N60C3D
G
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49123. The diode
used in anti parallel with the IGBT is the development type TA49061.
This IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
Formerly Developmental Type TA49117.
Features
$Y&Z&3&K
G12N60C3D
• 24 A, 600 V at T = 25°C
C
• Typical Fall Time 210 ns at T = 150°C
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti−Parallel Diode
• This is a Pb−Free Device
$Y
&Z
&3
&K
= onsemi Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
G12N60C3D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
September, 2021 − Rev. 3
HGTG12N60C3D/D
HGTG12N60C3D
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
Parameter
Symbol
HGTG12N60C3D
Unit
Collector to Emitter Voltage
BV
600
V
CES
Collector Current Continuous
I
24
12
A
A
At T = 25°C
C25
C
I
At T = 110°C
C110
C
Average Diode Forward Current at 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
15
A
A
V
V
(AVG)
I
96
CM
V
20
GES
GEM
V
30
Switching Safe Operating Area at T = 150°C
SSOA
24 A at 600 V
J
Power Dissipation Total at T = 25°C
P
104
0.83
W
W/°C
°C
C
D
Power Dissipation Derating T > 25°C
C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
T , T
−40 to 150
260
J
STG
T
°C
L
Short Circuit Withstand Time (Note 2) at V = 15 V
t
4
ms
GE
SC
SC
Short Circuit Withstand Time (Note 2) at V = 10 V
t
13
ms
GE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. V
= 360 V, T =125°C, R = 25 W
CE(PK)
J G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Parameter
Symbol
Test Condition
I = 250 mA, V = 0 V
C
Min
600
−
Typ
−
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
CES
GE
V
V
= BV
= BV
T
C
T
C
T
C
T
C
T
C
T
C
T
C
= 25°C
= 150°C
= 25°C
= 150°C
= 25°C
= 150°C
= 25°C
−
250
2.0
2.0
2.2
2.2
2.4
6.0
100
−
mA
mA
V
CES
CE
CE
CES
CES
−
−
Collector to Emitter Saturation Voltage
V
I
C
I
C
I
C
= I
C110
, V = 15 V
−
1.65
1.85
1.80
2.0
5.0
−
CE(SAT)
GE
−
V
= 15 A, V = 15 V
−
V
GE
−
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
= 250 mA, V = V
GE
3.0
−
V
GE(TH)
CE
I
V
GE
=
20 V
nA
A
GES
SSOA
T = 150°C, V = 15 V,
G
V
V
= 480 V
80
24
−
−
J
GE
CE(PK)
R
= 25 W, L = 100 mH
= 600 V
−
−
A
CE(PK)
Gate to Emitter Plateau Voltage
V
GEP
I
I
= I
, V = 0.5 BV
CES
7.6
48
−
V
C
C110
CE
On−State Gate Charge
Q
= I
C110
,
V
V
= 15 V
−
55
71
−
nC
nC
ns
ns
ns
ns
mJ
mJ
V
G(ON)
C
V
GE
= 0.5 BV
CE
CES
= 20 V
−
62
GE
Current Turn−On Delay Time
Current Rise Time
t
T = 150°C,
−
14
d(ON)I
J
CE
I
= I
C110
,
t
−
16
−
rI
d(OFF)I
V
V
= 0.8 BV
,
CE(PK)
GE
CES
= 15 V,
Current Turn−Off Delay Time
Current Fall Time
t
−
270
210
380
900
1.7
400
275
−
R
G
= 25 W,
L = 100 mH
t
fI
−
Turn−On Energy
E
ON
−
Turn−Off Energy (Note 3)
Diode Forward Voltage
E
OFF
−
−
V
EC
I
= 12 A
−
2.0
EC
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2
HGTG12N60C3D
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
C
Parameter
Symbol
Test Condition
Min
−
Typ
34
30
−
Max
42
Unit
ns
Diode Reverse Recovery Time
t
rr
I
I
= 12 A, dI /dt = 100 A/ms
EC
EC
= 1.0 A, dI /dt = 100 A/ms
−
37
ns
EC
EC
Thermal Resistance
R
IGBT
−
1.2
1.5
°C/W
°C/W
q
JC
Diode
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and
OFF
ending at the point where the collector current equals zero (I = 0 A). The HGTG12N60C3D was tested per JEDEC Standard No. 24−1
CE
Method for Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. Turn−On
losses include diode losses.
TYPICAL PERFORMANCE CURVES
PULSE DURATION = 250 ms, DUTY CYCLE < 0.5%, T = 25°C
C
80
80
70
V
GE
= 15 V
DUTY CYCLE < 0.5%, V = 10 V
CE
PULSE DURATION = 250 ms
12.0 V
70
60
50
60
50
40
30
10.0 V
9.0 V
T
= 150°C
C
40
30
20
T
= 25°C
C
T
C
= −40°C
8.5 V
8.0 V
20
10
0
10
0
7.5 V
7.0 V
8
0
2
4
6
10
4
6
8
10
12
14
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. TRANSFER CHARACTERISTICS
Figure 2. SATURATION CHARACTERISTICS
80
80
PULSE DURATION = 250 ms
PULSE DURATION = 250 ms
70
70
60
50
40
30
20
DUTY CYCLE < 0.5%, V = 10 V
DUTY CYCLE < 0.5%, V = 15 V
GE
GE
60
50
40
30
20
10
T
C
= 25°C
T
C
= −40°C
T
C
= 150°C
T
C
= −40°C
T
T
= 150°C
= 25°C
C
C
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. COLLECTOR TO EMITTER ON−STATE
Figure 4. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
VOLTAGE
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3
HGTG12N60C3D
TYPICAL PERFORMANCE CURVES (continued)
20
140
120
100
25
20
V
GE
= 15 V
V
CE
= 360 V, R = 25 W, T = 125°C
G
J
I
SC
15
15
80
60
10
5
10
5
40
20
t
SC
0
25
50
75
100
125
150
10
11
12
13
14
15
T , CASE TEMPERATURE (°C)
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 5. MAXIMUM DC COLLECTOR CURRENT
vs. CASE TEMPERATURE
Figure 6. SHORT CIRCUIT WITHSTAND TIME
400
100
T
J
= 150°C, R = 25 W, L = 100 mH, V
= 480 V
T
J
= 150°C, R = 25 W, L = 100 mH, V
= 480 V
= 15 V
G
CE(PK)
G
CE(PK)
300
200
V
GE
50
V
GE
= 10 V
V
= 10 V
GE
30
20
V
GE
= 15 V
100
10
5
10
15
20
25
30
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. TURN−ON DELAY TIME vs.
Figure 8. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
200
100
300
200
T
J
= 150°C, R = 25 W, L = 100 mH, V
= 480 V
= 10 V
T
J
= 150°C, R = 25 W, L = 100 mH, V
= 480 V
G
CE(PK)
G
CE(PK)
V
GE
V
GE
= 10 V or 15 V
V
GE
= 15 V
10
5
100
90
80
5
10
15
20
25
30
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. TURN−ON RISE TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 10. TURN−OFF FALL TIME vs.
COLLECTOR TO EMITTER CURRENT
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4
HGTG12N60C3D
TYPICAL PERFORMANCE CURVES (continued)
3.0
2.0
1.5
T
J
= 150°C, R = 25 W, L = 100 mH, V
= 480 V
T
J
= 150°C, R = 25 W, L = 100 mH, V
= 480 V
G
CE(PK)
G
CE(PK)
2.5
2.0
1.5
1.0
V
GE
= 10 V
1.0
V
GE
= 10 V or 15 V
V
= 15 V
GE
0.5
0
0.5
0
5
10
15
20
25
30
5
10
15
20
25
30
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 11. TURN−ON ENERGY LOSS vs.
Figure 12. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
200
100
100
80
T
R
= 150°C, T = 75°C,
T = 150°C, V = 15 V, R = 25 W, L = 100 mH
J GE G
J
C
= 25 W, L = 100 mH
G
V
GE
= 10 V
V
GE
= 15 V
60
LIMITED BY
CIRCUIT
10
1
f
f
P
P
= 0.05 / (t
+ t
)
MAX1
MAX2
D(OFF)I
D(ON)I
40
20
= (P − P ) / (E + E )
D
C
ON
OFF
= ALLOWABLE DISSIPATION
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 1.2°C/W
D
C
R
q
JC
0
5
10
20
30
0
100
200
300
400
500
600
I
, COLLECTOR TO EMITTER CURRENT (A)
V , COLLECTOR EMITTER VOLTAGE (V)
CE(PK)
CE
Figure 13. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 14. SWITCHING SAFE OPERATING AREA
I
= 1.276 mA, R = 50 W,T = 25°C
L C
G(REF)
15
12
2500
600
480
FREQUENCY = 1 MHz
CIES
2000
1500
1000
V
CE
= 600 V
360
240
9
6
V
CE
= 400 V
V
CE
= 200 V
120
0
500
0
3
0
COES
CRES
0
5
10
15
20
25
0
10
20
30
40
50
60
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 15. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 16. GATE CHARGE WAVEFORMS
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5
HGTG12N60C3D
TYPICAL PERFORMANCE CURVES (continued)
100
0.5
0.2
t
1
t
0.1
10−1
P
D
0.05
2
0.02
0.01
DUTY FACTOR, D = t / t
1 2
PEAK T = (P x Z
x R ) + T
q
q
J
D
JC
JC
C
SINGLE PULSE
10−4
10−2
10−5
10−3
10−2
10−1
100
101
t , RECTANGULAR PULSE DURATION (s)
1
Figure 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
50
40
30
20
T
C
= 25°C, d /dt = 100 A/ms
IEC
40
30
trr
100°C
ta
20
10
0
150°C
25°C
tb
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
V
EC
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
Figure 18. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 19. RECOVERY TIMES vs. FORWARD CURRENT
TEST CIRCUIT AND WAVEFORMS
90%
OFF
L = 100 mH
10%
ON
RHRP1560
V
GE
E
E
V
CE
R
G
= 25 W
90%
+
10%
d(OFF)I
I
V
DD
= 480 V
CE
−
t
t
rI
t
fI
t
d(ON)I
Figure 20. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 21. SWITCHING TEST WAVEFORMS
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6
HGTG12N60C3D
HANDLING PRECAUTIONS FOR IGBTs
OPERATING FREQUENCY INFORMATION
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows f
or f
whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05 / (t
+ t
).
MAX1
MAX1
D(OFF)I
D(ON)I
Deadtime (the denominator) has been arbitrarily held to
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
10% of the on−state time for a 50% duty factor. Other
definitions are possible. t
Figure 21.
and t
are defined in
D(OFF)I
D(ON)I
Device turn−off delay can establish an additional
frequency limiting condition for an application other than
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means, for example, with a
T
. t
is important when controlling output ripple
JM D(OFF)I
under a lightly loaded condition.
is defined by f = (P −P ) /(E
f
+ E ). The
ON
MAX2
MAX2
D
C
OFF
metallic wristband.
allowable dissipation (P ) is defined by P = (T − T ) /
D D JM C
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
R
. The sum of device switching and conduction losses
qJC
must not exceed P . A 50% duty factor was used (Figure 13)
and the conduction losses (P ) are approximated by
D
C
5. Gate Voltage Rating − Never exceed the
P = (V x I ) / 2.
C CE CE
gate−voltage rating of V . Exceeding the rated
GEM
E
and E
are defined in the switching waveforms
ON
OFF
V
GE
can result in permanent damage to the oxide
shown in Figure 21. E is the integral of the instantaneous
ON
layer in the gate region.
power loss (I x V ) during turn−on and E
is the
CE
CE
OFF
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have an
internal monolithic Zener Diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
integral of the instantaneous power loss during turn−off. All
tail losses are included in the calculation for E ; i.e. the
OFF
collector current equals zero (I = 0).
CE
ORDERING INFORMATION
Part Number
HGTG12N60C3D
Package
Brand
Shipping
450 Units / Tube
TO−247
G12N60C3D
NOTE: When ordering, use the entire part number.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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