H11F3VM [ONSEMI]
6引脚DIP双向模拟FET输出光电耦合器;
| 型号： | H11F3VM |
| 厂家： | 
ONSEMI |
| 描述： | 6引脚DIP双向模拟FET输出光电耦合器 输出元件 光电 |
| 文件： | 总10页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Photo FET Optocouplers
PDIP6 8.51x6.35, 2.54P
CASE 646BX
H11F1M, H11F2M, H11F3M
6
6
1
1
General Description
The H11FXM series consists of a Gallium−Aluminum−Arsenide
IRED emitting diode coupled to a symmetrical bilateral silicon
photo−detector. The detector is electrically isolated from the input
and performs like an ideal isolated FET designed for distortion−free
control of low level AC and DC analog signals. The H11FXM series
devices are mounted in dual in−line packages.
PDIP6 8.51x6.35, 2.54P
CASE 646BY
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
Features
6
• As a Remote Variable Resistor:
1
♦ ≤ 100 W to ≥ 300 MW
♦ ≤15 pF Shunt Capacitance
♦ ≥100 GW I/O Isolation Resistance
• As an Analog Switch:
MARKING DIAGRAM
♦ Extremely Low Offset Voltage
ON
♦ 60 V
Signal Capability
pk−pk
H11F1
VXYYQ
♦ No Charge Injection or Latch−Up
♦ UL Recognized (File #E90700)
• These are Pb−Free Devices
Application
H11F1 = Specific Device Code
• As a Remote Variable Resistor:
♦ Isolated Variable Attenuator
♦ Automatic Gain Control
V
= VDE Mark (Only appears on parts ordered
with VDE option − See order entry table)
= One−Digit Year Code, e.g., “7”
= Two Digit Work Week Ranging
from “01” to “53”
X
YY
♦ Active Filter Fine Tuning/Band Switching
Q
= Assembly Package Code
• As an Analog Switch:
♦ Isolated Sample and Hold Circuit
♦ Multiplexed, Optically Isolated A/D Conversion
SCHEMATIC
OUTPUT
ANODE
6
5
4
1
2
3
TERM.
CATHODE
OUTPUT
TERM.
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
September, 2022 − Rev. 3
H11F3M/D
H11F1M, H11F2M, H11F3M
SAFETY AND INSULATION RATINGS
(As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1
< 150 Vrms
< 300 Vrms
I−IV
I−IV
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input to Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V
,
1360
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input to Output Test Voltage, Method B, V
x 1.875 = V
,
1594
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
850
6,000
≥7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥7
External Clearance (for Option TV, 0.4″ Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥10
≥0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at Ts, V = 500 V (Note 1)
>10
IO
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Value
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Lead Solder Temperature
−40 to +125
−40 to +100
°C
°C
°C
STG
OPR
T
T
260 for 10 seconds
SOL
EMITTER
I
Continuous Forward Current
Reverse Voltage
60
5
mA
V
F
V
R
I (pk)
Forward Current – Peak (10 ms Pulse, 1% Duty Cycle)
LED Power Dissipation Ambient 25°C Ambient
Derate Linearly from 25°C
1
A
F
P
D
100
1.33
mW
mW/°C
DETECTOR
P
Detector Power Dissipation at 25°C
Derate Linearly from 25°C
300
4.0
30
mW
mW/°C
V
D
BV
Breakdown Voltage (Either Polarity)
H11F1M, H11F2M
H11F3M
4−6
15
V
I
Continuous Detector Current (Either Polarity)
100
mA
4−6
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
H11F1M, H11F2M, H11F3M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ*
Max
Unit
EMITTER
V
Input Forward Voltage
I = 16 mA
−
−
1.3
−
1.75
10
−
V
mA
pF
F
F
I
R
Reverse Leakage Current
Capacitance
V = 5 V
R
C
V = 0 V, f = 1.0 MHz
−
50
J
OUTPUT DETECTOR
BV
Breakdown Voltage
Either Polarity
H11F1M,
H11F2M
I
= 10 mA, I = 0
30
−
−
V
4−6
4−6
F
H11F3M
15
−
−
−
−
−
I
Off−State Dark Current
V
V
= 15 V, I = 0
50
50
nA
4−6
4−6
F
= 15 V, I = 0,
−
mA
4−6
F
T
= 100°C
A
R
C
Off−State Resistance
V
= 15 V, I = 0
300
−
−
−
MW
4−6
4−6
4−6
F
Capacitance
V
4−6
= 15 V, I = 0,
−
15
pF
F
f = 1 MHz
TRANSFER CHARACTERISTICS
Symbol
Characteristics
Test Conditions
Min
Typ*
Max
Unit
DC CHARACTERISTICS
R
R
On−State Resistance
On−State Resistance
H11F1M
H11F2M
H11F3M
H11F1M
H11F2M
H11F3M
I = 16 mA, I
= 100 mA
−
−
−
−
−
−
−
−
−
−
−
−
−
2
200
330
470
200
330
470
−
W
4−6
6−4
F
4−6
6−4
4−6
I = 16 mA, I
F
= 100 mA
W
Resistance, Non−Linearity and Assymetry
I = 16 mA, I
= 25 mA RMS,
%
F
f = 1 kHz
AC CHARACTERISTICS
t
t
Turn−On Time
Turn−Off Time
R = 50 W, I = 16 mA,
4−6
−
−
−
−
45
45
ms
ms
on
L
F
V
= 5 V
R = 50 W, I = 16 mA,
off
L
4−6
F
V
= 5 V
ISOLATION CHARACTERISTICS
Symbol
VISO
Characteristics
Test Conditions
t = 1 Minute
= 500 VDC
Min
Typ*
−
Max
−
Unit
Input−Output Isolation Voltage
Isolation Resistance
4170
VAC
RMS
11
RISO
V
I−O
10
−
−
W
CISO
Isolation Capacitance
f = 1 MHz
−
0.2
−
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
*All Typical values at T = 25°C.
A
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3
H11F1M, H11F2M, H11F3M
TYPICAL PERFORMANCE CURVES
I
I
I
= 18 mA
= 14 mA
= 10 mA
800
600
400
200
F
F
F
10
1
I
= 6 mA
= 2 mA
F
I
F
I
I
= 2 mA
= 6 mA
F
0
F
−200
−400
−600
−800
I
F
I
F
I
F
= 10 mA
= 14 mA
= 18 mA
Normalized to:
I
I
= 16 mA
F
46
= 5 mA RMS
0.1
1
10
100
−0.2
−0.1
0.0
0.1
0.2
I
F,
INPUT CURRENT (mA)
V
46
, OUTPUT VOLTAGE (V)
Figure 2. Output Characteristics
Figure 1. Resistance vs. Input Current
10000
1000
100
10
2.0
1.8
1.6
Normalized to:
= 15 V
V
46
I
= 0 mA
F
A
T
= 25°C
T
= −40°C
A
1.4
1.2
1.0
0.8
T
= 25°C
A
T
A
= 100°C
1
0.1
1
10
100
0
20
40
60
80
100
I , LED FORWARD CURRENT (mA)
F
T , AMBIENT TEMPERATURE (°C)
A
Figure 4. Off−State Current vs. Ambient
Figure 3. LED Forward Voltage vs. Forward Current
Temperature
5
4
3
2
V
= 10 mA RMS
4−6
r(on) = 200 W
1
0
1
50
100
150
200
250
300
350
V
4−6
, D.C. BIAS VOLTAGE (mV)
Figure 5. Resistive Non−Linearity vs. D.C. Bias
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4
H11F1M, H11F2M, H11F3M
TYPICAL APPLICATIONS
As a Variable Resistor
As an Analog Signal Switch
ISOLATED VARIABLE ATTENUATORS
ISOLATED VARIABLE ATTENUATORS
500K
+
V
IN
−
V
V
OUT
OUT
V
V
IN
I
50
IN
V
IN
I
F
V
OUT
H11F1M
H11F1M
H11F1M
C
I
F
F
V
OUT
t
I
F
HIGH FREQUENCY
Dynamic Range 50 db
LOW FREQUENCY
Dynamic Range 70 db
@ 1 MHz
@ 10 kHz
For 0 ≤ I ≤ 30 mA
For 0 ≤ I ≤ 30 mA
F
F
Distortion free attenuation of low level A.C. signals is accomplished
by varying the IRED current, IF Note the wide dynamic range and
absence of coupling capacitors; D.C. level shifting or parasitic
feedback to the controlling function.
Accuracy and range are improved over conventional FET
switches because the H11FXM has no charge injection from the
control signal. The H11FXM also provides switching of either
polarity input signal up to 30V magnitude.
MULTIPLEXED, OPTICALLY−ISSOLATED A/D CONVERSION
AUTOMATIC GAIN CONTROL
CALL V1
H11F1M
CALL
V
IN
V
OUT
V
n
+
V
V
H74A1
MSB
1
2
MSB
LSB
−
PROCESS
CONTROL
LOGIC
A/D
CONVERTER
H11F1M
V
H74A1
n
500K
SYSTEM
LSB
I
F
H11F1M
AGC
SIGNAL
This simple circuit provides over 70db of stable gain control for an
AGC signal range of from 0 to 30mA. This basic circuit can be used
to provide programmable fade and attack for electronic music.
The optical isolation, linearity and low offset voltage of the
H11FXM allows the remote multiplexing of low level analog
signals from such transducers as thermocouplers, Hall effect
devices, strain gauges, etc. to a single A/D converter.
ACTIVE FILTER FINE TUNING/BAND SWITCHING
TEST EQUIPMENT − KELVIN CONTACT POLARITY
H11F1M
H11F1M
C
I
F2
I
F2
I
F
I
F
H11F1M
H11F1M
A
I
TO
I
F
TEST
A & B FOR
POLARITY 1
A1
PARAMETER
SENSING
BOARD
DEVICE
UNDER
TEST
A2
A3
C & D FOR
POLARITY 2
B
D
I
F
I
F
H11F1M
H11F1M
I
F2
ADJUSTS f , I ADJUSTS f
1 F2 2
In many test equipment designs the auto polarity function uses
reed relay contacts to switch the Kelvin Contact polarity.
These reeds are normally one of the highest maintenance cost
items due to sticking contacts and mechanical problems. The
totally solid−State H11FXM eliminates these troubles while
providing faster switching.
The linearity of resistance and the low offset voltage of the
H11FXM allows the remote tuning or band−switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1M IRED ’s
controlling the filter’s transfer characteristic.
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5
H11F1M, H11F2M, H11F3M
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
TP
TL
260
240
220
200
180
160
140
120
100
80
tP
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (s)
Profile Feature
Pb−Free Assembly Profile
150°C
200°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t S) from (Tsmin to Tsmax)
60–120 seconds
Ramp−up Rate (t L to tP
)
3°C/seconds max.
217°C
Liquidous Temperature (TL)
Time (t L) Maintained Above (TL)
Peak Body Package Temperature
60–150 seconds
260°C +0°C / –5°C
30 seconds
) within 5°C of 260°C
Time (t P
Ramp−down Rate (TP to TL)
6°C/seconds max.
Time 25°C to Peak Temperature
8 minutes max.
ORDERING INFORMATION
Option
No option
S
Order Entry Identifier (Example)
H11F1M
Description
Standard Through Hole Device
H11F1SM
Surface Mount Lead Bend
SR2
V
H11F1SR2M
H11F1VM
Surface Mount; Tape and Reel
IEC60747−5−5 approval
TV
H11F1TVM
IEC60747−5−5 approval, 0.4” Lead Spacing
IEC60747−5−5 approval, Surface Mount
IEC60747−5−5 approval, Surface Mount, Tape and Reel
SV
H11F1SVM
SR2V
H11F1SR2VM
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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