H11AG1M [ONSEMI]
6 引脚 DIP 光电晶体管输出光耦合器;
| 型号： | H11AG1M |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 光电晶体管输出光耦合器 输出元件 晶体管 光电晶体管 |
| 文件： | 总14页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2015
H11AG1M
6-Pin DIP Phototransistor Optocoupler
Features
Description
■ High-Efficiency Low-Degradation Liquid Epitaxial
The H11AG1M device consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of high current transfer ratio
at both low output voltage and low input current. This
makes it ideal for use in low-power logic circuits, tele-
communications equipment and portable electronics
isolation applications.
IRED
■ Logic Level Compatible, Input and Output Currents,
with CMOS and LS/TTL
■ High DC Current Transfer Ratio at Low Input Currents
(as low as 200 µA)
■ Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
for 1 Minute
RMS
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■ CMOS Driven Solid State Reliability
■ Telephone Ring Detector
■ Digital Logic Isolation
Schematic
Package Outlines
1
2
6
BASE
ANODE
6
6
1
1
CATHODE
5 COLLECTOR
4 EMITTER
6
1
N/C 3
Figure 2. Package Outlines
Figure 1. Schematic
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
< 150 V
< 300 V
I–IV
I–IV
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
Input-to-Output Test Voltage, Method A, V
x 1.6 = V
,
IORM
PR
1360
V
V
peak
peak
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
V
PR
Input-to-Output Test Voltage, Method B, V
x 1.875 = V
,
IORM
PR
1594
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
850
6000
≥ 7
V
V
IORM
peak
V
IOTM
peak
External Creepage
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
≥ 10
≥ 0.5
175
350
800
DTI
(1)
T
Case Temperature
S
(1)
I
Input Current
mA
mW
Ω
S,INPUT
(1)
P
Output Power
S,OUTPUT
(1)
9
R
Insulation Resistance at T , V = 500 V
> 10
IO
S
IO
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Value
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
225
°C
°C
STG
T
OPR
T
ºC
J
T
Lead Solder Temperature
°C
SOL
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
mW
mW/°C
P
D
3.5
EMITTER
I
Continuous Forward Current
Reverse Voltage
50
6
mA
V
F
V
R
I (pk)
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation @ 25°C
Derate Linearly From 25°C
3.0
75
1.0
A
F
mW
mW/°C
P
D
DETECTOR
I
Continuous Collector Current
Detector Power Dissipation @ 25°C
Derate Linearly From 25°C
50
150
2.0
mA
mW
C
P
D
mW/°C
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
3
Electrical Characteristics
T = 25°C unless otherwise specified.
A
Individual Component Characteristics
Symbol
EMITTER
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
V
Input Forward Voltage
I = 1 mA
1.25
1.50
10
V
F
F
I
Reverse Leakage Current
Capacitance
V = 5 V, T = 25°C
µA
pF
R
R
A
C
V = 0, f = 1.0 MHz
100
J
DETECTOR
BV
BV
BV
Breakdown Voltage, Collector-to-Emitter I = 1.0 mA, I = 0
30
70
7
V
V
CEO
CBO
ECO
C
F
Breakdown Voltage, Collector-to-Base
I = 100 µA, I = 0
C F
Breakdown Voltage, Emitter-to-Collector I = 100 µA, I = 0
V
C
F
I
Leakage Current, Collector-to-Emitter
Capacitance
V
= 10 V, I = 0
5
10
µA
pF
CEO
CE
F
C
V
= 10 V, f = 1 MHz
10
CE
CE
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS
I = 1 mA, V = 5 V
300
100
100
%
%
%
V
F
CE
CTR
Current Transfer Ratio
I = 1 mA, V = 0.6 V
F CE
I = 0.2 mA, V = 1.5 V
F
CE
V
Saturation Voltage
I = 2.0 mA, I = 0.5 mA
0.40
CE(SAT)
F
C
AC CHARACTERISTICS (Non-Saturated Switching Times)
t
t
Turn-On Time
Turn-Off Time
R = 100 Ω, I = 1 mA, V = 5 V
5
5
µs
µs
on
off
L
F
CC
R = 100 Ω, I = 1 mA, V = 5 V
L
F
CC
Isolation Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
V
C
R
Input-Output Isolation Voltage t = 1 Minute
4170
VAC
RMS
ISO
ISO
ISO
Isolation Capacitance
Isolation Resistance
V
V
= 0 V, f = 1 MHz
0.2
pF
I-O
I-O
11
= 500 VDC, T = 25°C
10
Ω
A
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
4
Typical Performance Curves
2.0
1.8
1.6
1.2
1.0
0.8
0.6
0.4
0.2
TA= -55oC
1.4
TA = 25oC
1.2
= 100oC
TA
NORMALIZED TO:
IF = 5 mA
VCE = 5 V
1.0
0.8
TA = 25°C
0.1
1
10
100
0.1
1
10
100
IF - FORWARD CURRENT - mA
IF - LED FORWARD CURRENT (mA)
Figure 3. LED Forward Voltage
vs. Forward Current
Figure 4. Normalized Current Transfer Ratio
vs. Forward Current
10
1.6
NORMALIZED TO:
IF = 5 mA
IF = 10 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
V
= 5 V
= 25o
CE
IF = 10 mA
IF = 2 mA
IF = 5 mA
IF = 5 mA
IF = 2 mA
T
C
A
IF = 1 mA
0.1
0.01
IF = 0.5 mA
IF = 0.2 mA
IF = 1 mA
IF = 0.5 mA
NORMALIZED TO:
IF = 5 mA
0.001
0.0001
IF = 0.2 mA
VCE = 5 V
TA = 25o
C
-60
-40
-20
0
20
40
60
80
100
0.1
1
10
VCE - COLLECTOR - EMITTER VOLTAGE - V
T
A - AMBIENT TEMPERATURE -oC
Figure 6. Normalized Collector
vs. Collector-Emitter Voltage
Figure 5. Normalized CTR vs. Temperature
10
1
30
25
20
15
10
I
F = 10 mA
IF = 5 mA
IF = 2 mA
IF = 1 mA
0.1
I
F = 0.5 mA
IF = 0.2 mA
NORMALIZED TO:
IF = 5 mA
0.01
NORMALIZED TO:
IF = 5 mA
5
VCB = 5 V
TA= 25oC
VCB = 5 V
TA = 25oC
0
0.001
0
10
20
30
40
50
60
70
80
90 100
-60
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE - oC
IF - FORWARD CURRENT - mA
Figure 7. Normalized Collector-Base
Photocurrent Ratio vs. Forward Current
Figure 8. Normalized Collector-Base Current
vs. Temperature
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
10000
IF = 0 mA
VCE = 10 V
1000
100
10
1
0.1
0
10
20
30
40
50
60
70
80
90
100
TA - AMBIENT TEMPERATURE ( oC)
Figure 9. Collector-Emitter Dark Current vs. Ambient Temperature
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
6
Typical Application
3 V ≤ VCC ≤ 10 V
47 KΩ
4093 or
74HC14
R1
H11AG1M
AC
INPUT
VOLTAGE
1N4148
C1
4.7 KΩ
C2
0.1 μF
4.7 MΩ
Input
R1
C1
Z
40-90 VAC
20 Hz
75 KΩ
1/10 W
0.1 µF
100 V
109 KΩ
RMS
95-135 VAC
60 Hz
180 KΩ
1/10 W
12 nF
200 V
285 KΩ
550 KΩ
RMS
200-280 VAC
50/60 Hz
390 KΩ
1/4 W
6.80 nF
400 V
RMS
DC component of input voltage is ignored due to C1
The H11AG1M uses less input power than the neon bulb traditionally used to monitor telephone and line voltages.
Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired
signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing
requirements.
Figure 10.Telephone Ring Detector / A.C. Line CMOS Input Isolator
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
7
Reflow Profile
300
260°C
280
260
240
220
200
180
160
140
120
100
80
> 245°C = 42 s
Time above
183°C = 90 s
°C
1.822°C/s Ramp-up rate
60
40
33 s
20
0
0
60
120
180
270
360
Time (s)
Figure 11. Reflow Profile
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
8
Ordering Information
Part Number
Package
Packing Method
H11AG1M
DIP 6-Pin
Tube (50 Units)
H11AG1SM
H11AG1SR2M
H11AG1VM
H11AG1SVM
SMT 6-Pin (Lead Bend)
SMT 6-Pin (Lead Bend)
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6-Pin, DIN EN/IEC60747-5-5 Option
SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
Tube (50 Units)
H11AG1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option
H11AG1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option
Tape and Reel (1000 Units)
Tube (50 Units)
Marking Information
1
2
6
H11AG1
V X YY Q
5
3
4
Figure 12. Top Mark
Table 1. Top Mark Definitions
1
2
3
4
5
6
Fairchild Logo
Device Number
DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
One-Digit Year Code, e.g., “5”
Digit Work Week, Ranging from “01” to “53”
Assembly Package Code
©2007 Fairchild Semiconductor Corporation
H11AG1M Rev. 1.4
www.fairchildsemi.com
9
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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