FYPF2010DNTU [ONSEMI]

肖特基势垒整流器;


型号：	FYPF2010DNTU
厂家：	ONSEMI
描述：	肖特基势垒整流器局域网二极管
文件：	总5页 (文件大小：253K)
中文：	中文翻译
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to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

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FYPF2010DN

Features

•

Low forward voltage drop

High frequency properties and switching speed

Guard ring for over-voltage protection

Applications

TO-220F

•

Switched mode power supply

Freewheeling diodes

Polarity protection

1. Anode 2.Cathode 3. Anode

20A SCHOTTKY BARRIER RECTIFIER

Absolute Maximum Ratings T =25 C unless otherwise noted

Symbol

Parameter

Maximum Repetitive Reverse Voltage

Maximum DC Reverse Voltage

Value

100

Units

RRM

Maximum Average Rectified Current

@ T = 105°C

F(AV)

FSM

Maximum Forward Surge Current (per diode)

60Hz Single Half-Sine Wave

150

Operating Junction and Storage Temperature

-65 to +150

°C

J, STG

Thermal Characteristics

Symbol

Parameter

Value

Units

Maximum Thermal Resistance, Junction to Case (per diode)

2.8

°C/W

θJC

Electrical Characteristics ^{(per diode) T =25 °C unless otherwise noted}

Symbol

Parameter

Min.

Typ.

Max.

Units

Maximum Instantaneous Forward Voltage

I = 10A

= 25 °C

= 125 °C

= 25 °C

= 125 °C

0.77

0.65

I = 10A

I = 20A

0.75

Maximum Instantaneous Reverse Current

(per diode)

@ rated V

= 25 °C

= 125 °C

0.1

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Rev. 1.1, June 2016

Typical Characteristics

100

T_J=125 ^o

T_J=75 ^o

0.1

T_J=125 ^o

T_J=75 ^o

T_J=25 ^o

0.1

0.01

1E-3

T_J=25 ^o

0.01

0.0

100

0.5

1.0

1.5

Forward Voltage Drop, V_F[V]

Reverse Voltage, V_R[V]

Figure 1. Typical Forward Voltage Characteristics

(per diode)

Figure 2. Typical Reverse Current

vs. Reverse Voltage (per diode)

T_J=25 ^o

1000

900

800

700

600

500

400

300

200

0.1

100

100µ

10m

100m

100

Reverse Voltage, V_R[V]

Pulse Duration [s]

Figure 4. Thermal Impedance Characteristics

(per diode)

Figure 3. Typical Junction Capacitance

(per diode)

250

200

150

100

120

140

160

100

Case Temperature, T_C[^oC]

Number of Cycles @ 60Hz

Figure 6. Non-Repetive Surge Current

(per diode)

Figure 5. Forward Current Derating Curve

Rev. 1.1, June 2016

10.36

9.96

2.66

2.42

3.28

3.08

7.00

3.40

3.20

0.70

SEE NOTE "F"

6.88

6.48

1 X 45°

16.07

15.67

16.00

15.60

(3.23)

1.47

1.24

2.96

2.56

2.14

0.90

0.70

0.50

10.05

9.45

30°

0.45

0.25

0.60

0.45

2.54

4.90

4.50

NOTES:

A. EXCEPT WHERE NOTED CONFORMS TO

EIAJ SC91A.

DOES NOT COMPLY EIAJ STD. VALUE.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-1994.

F. OPTION 1 - WITH SUPPORT PIN HOLE.

OPTION 2 - NO SUPPORT PIN HOLE.

G. DRAWING FILE NAME: TO220M03REV5

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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