FSA642UMX_技术文档

Is Now Part of

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2014 December

FSA642

低功率，3端口，高速 MIPI 开关

特性

说明

FSA642是双向低功率高速模拟开关。

引脚排列专为简化差分信号布局而设计，配置为三刀双掷

开关(TPDT)。

. 低导通电容： 7.0pF（典型值）

. 低导通电阻： 7.0Ω（典型值）

. -3db带宽： 1GHz（典型值）

FSA642专为两个MIPI器件之间切换进行优化，如相机或液

晶显示器以及板上多媒体应用处理器(MAP)。

. 24-引脚 UMLP (2.5 x 3.4mm) 封装

. 额定值 8kV ESD ；>16kV Power/GND ESD

FSA642符合移动行业处理器接口(MIPI)的要求。

低电容设计使得FSA642可切换频率超过500MHz的信号。

出色的通道间抗串扰能力可以最大程度地减小干扰，实现

MIPI规范所描述的高速差分信号和单端信号传输。

应用

. 手机上的双镜头应用

. 手机上的双 LCD 应用，数码相机显示和取景器

订购信息

器件编号

顶标

工作温度范围

封装

24引脚，方形，超薄膜塑无铅封装

(UMLP)，2.5 x 3.4mm

FSA642UMX

JG

-40 至 +85°C

Camera 1

Camera 2

LCD 1

LCD 2

D D

C

D

C

D

C

D D

C

FSA642

D

C

D

C

MAP Processor

图1.

应用模块图

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

引脚布局

18 17 16 15 14 13

DB2P

DB1P

DA2N

SEL

VCC

GND

/OE

19

20

12

11

10

9

21 DB1N

642

22

23

24

CLKBP

CLKBN

NC

8

7

NC

1

2

3

4

5

6

图2.

引脚配置（俯视图）

引脚说明

引脚号

名称

说明

1, 2

3, 4

5, 6

7, 24

8

CLKP, CLKN

D1P, D1N

D2P, D2N

NC

时钟路径（公共）

数据路径1（公共）

数据路径2（公共）

未连接（浮空）

输出使能（低电平有效）

接地

/OE

9

GND

10

VCC

功率

11

SEL

选择 (0=A, 1=B)

数据路径(A2)

数据路径 (A1)

时钟路径(A)

12, 13

14, 15

16, 17

18, 19

20, 21

22, 23

DA2N, DA2P

DA1N, DA1P

CLKAN, CLKAP

DB2N, DB2P

DB1P, DB1N

CLKBP, CLKBN,

数据路径 (2B)

数据路径 (1B)

时钟路径(B)

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

2

功能框图

FSA642

CLKAP (17)

CLKAN (16)

(1) CLKP

(2) CLKN

DA1P (15)

DA1N (14)

DA2P (13)

DA2N (12)

(3) D1P

(4) D1N

CLKBP (22)

CLKBN (23)

DB1P (20)

DB1N (21)

(5) D2P

(6) D2N

DB2P (19)

DB2N (18)

(8) /OE

开关

控制

(11) SEL

(10) V_CC

(9) GND

图3.

功能框图

真值表

SEL

无关

低

/OE

功能

未连接

高

低

D1, D2, CLK=DA1, DA2, CLKA

D1, D2, CLK=DB1, DB2, CLKB

高

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

3

绝对最大额定值

应力超过绝对最大额定值，可能会损坏设备。

在超出推荐的工作条件的情况下，该器件可能无法正常运行或操作，且不建议让器件在这些条件下长期工作。

此外，过度暴露在高于推荐的工作条件下，会影响器件的可靠性。绝对最大额定值仅是额定应力值。

符号

V_CC

参数

最小值

-0.50

-0.5

最大值

+5.25

单位

V

电源电压

V_CNTRL

V_SW

DC 输入电压(SEL, /OE)⁽¹⁾

直流开关I/O电压⁽¹⁾

直流输入二极管电流

直流输出电流

V_CC

V

-0.5

V_CC+ 0.3

V

I_IK

-50

mA

°C

I_OUT

T_STG

50

存储温度

-65

+150

6.5

全部引脚

人体模型，JEDEC: JESD22-A114

输入/输出至地

电源至地

8.0

16.0

2.5

ESD

kV

充电器件模型，JEDEC: JESD22-C101

注意：

1. 当测量输入与输出二极管电流额定值时，该输入与输出可能超出负额定值。

推荐工作条件

推荐的操作条件表定义了器件的真实工作条件。指定推荐的工作条件，以确保设备的最佳性能达到数据表中的规格。

飞兆半导体建议不要超过推荐工作条件，也不能按照绝对最大额定值进行设计。

符号

V_CC

参数

最小值

2.65

0

最大值

4.30

V_CC

单位

电源电压

控制输入电压(SEL, /OE)⁽2⁾

V

V_CNTRL

V_SW

开关I/O电压

-0.5

-40

V_CC-1

+85

V

T_A

工作温度

°C

注意：

2. 控制输入必须保持高电平或低电平，不允许浮空。

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

4

直流电气特性

若无其他说明，所有典型值都在T_A=25°C 下测得。

T_A=-40 至 +85ºC

符号

参数

工作条件

I_IN=-18mA

V_CC(V)

单位

最小值典型值最大值

V_IK箝位二极管电压

2.775

-1.2

V

I_IN控制脚输入漏电流

V_IH输入电压高电平

V_SW=0 to 4.3V

4.3

2.650 至 2.775

4.3

-1

1

µA

1.3

1.7

V_IN=0 至 V_CC

V

V_IL输入电压低电平

I_OZ关断漏电流

V_IN=0 至 V_CC

2.650 至 2.775

4.3

0.5

2

V

A,B=0+0.3V to V_CC-0.3

V_CNTRL=0 or V_CC, I_OUT=0

-2

µA

I_CC静态电源电流

4.3

1.0

每个控制电压和V_CC的I_CC

电流增量

I_CCT

V_CNTRL=1.8V

2.775

1.5

µA

直流电气特性，低速模式

若无其他说明，所有典型值都在T_A=25°C 下测得。

T_A=-40 至 +85ºC

符号

参数

工作条件

V_CC(V)

单位

最小值典型值最大值

R_ON

∆R_ON

LS 开关导通电阻⁽³⁾

V_SW=1.2V, I_ON=-10mA, 图 4

2.65

10

14



LS Delta R_ON⁽⁴⁾

V_SW=1.2V, I_ON=-10mA(内部成对)

0.65

说明：

3. 在指定通过电流下，由A/B 和 CLK/Dn引脚之间的电压降测得。

4. 由产品特性保证。

直流电气特性，高速模式

若无其他说明，所有典型值都T_A=25°C 下测得。

T_A=-40 至 +85ºC

符号

参数

工作条件

V_CC(V)

单位

最小值典型值最大值

R_ON

∆R_ON

HS 开关导通电阻⁽⁵⁾

V_SW=0.4V, I_ON=-10mA, 图 4

2.65

7.0

9.5



HS Delta R_ON⁽⁶⁾

V_SW=0.4V, I_ON=-10mA (内部成对)

0.65

说明：

5. 在指定通过电流下，由A/B 和 Dn引脚之间的电压降测得。

6. 由产品特性保证。

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

5

交流电气特性

所有值的测量条件为R_L=50Ω 和 R_S=50Ω，典型值为V_CC=2.775V，T_A=25°C ，除非另有说明。

T_A=-40ºC 至 +85ºC

符号

参数

关断隔离⁽⁷⁾

非相邻通道串扰⁽⁷⁾

工作条件

V_CC(V)

单位

最小值典型值最大值

f=100MHz, R_T=50Ω

图 14

O_IRR

Xtalk

BW

2.775

-35

-55

1.0

dB

f=100MHz, R_T=50Ω

图 15

C_L=0pF, R_T=50Ω

图 13

7

)

-3db 带宽⁽

GHz

开机时间SEL, /OE

C_L=5pF, V_SW=1.2V

t_ON

至输出

2.650 至 2.775

20

15

37

27

ns

图 6, 图 7

关断时间SEL, /OE

C_L=5pF, V_SW=1.2V

t_OFF

至输出

图 6, 图 7

C_L=5pF

传输延迟⁽⁷⁾

t_PD

2.775

0.25

5

ns

图 6, 图 8

C_L=5pF, V_SW1=V_SW2=1.2V

图 12

t_BBM

“先开后合”时间

2.650 至 2.775

3

8

注意：

7. 由产品特性保证。

交流电气特性，高速模式

若无其他说明，所有典型值都在 V_CC=2.775V ，T_A=25°C 下测得。

T_A=-40ºC 至 +85ºC

符号

参数

工作条件

单位

最小值典型值最大值

多器件通道间相位差^(8,9)

t_{SK(Part_Part)}

V_SW=0.2Vdiff_PP, C_L=5pF

40

15

10

80

30

20

ps

单器件通道间相位差⁽⁸⁾

t_{SK(Chl_Chl)}

V_SW=0.2Vdiff_PP, C_L=5pF, 图 9

V_SW=0.2Vdiff_PP, C_L=5pF

同一差分通道内的反向转换相位差⁽⁸⁾

t_SK(脉冲)

说明：

8. 由产品特性保证。

9. 假设所有器件应用相同的 V_CC和温度。

电容值

T_A=-40ºC 至 +85ºC

符号

参数

工作条件

单位

最小值典型值最大值

控制引脚输入电容⁽¹⁰⁾

C_IN

C_ON

V_CC=0V

1.5

V_CC=2.775V, /OE=0V, f=1MHz, at 25°C

图 11

Dn/CLK- 导通电容⁽¹⁰⁾

6.0

7.0

2.5

9.0

pF

V_CC=2.775V_,/OE=2.775V, f=1MHz

Dn/CLK- 关断电容⁽¹⁰⁾

C_OFF

图 10

注意：

10. 由产品特性保证。

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

6

测试框图

V_ON

I_Dn(OFF)

NC

A

DA/Bn

V

Dn

SW

V

SW

Select

GND

I_ON

GND

Select

GND

V

_Sel= 0 orVcc

V

_Sel= 0 orVcc

R

_ON= V_ON/ I_ON

**Each switch port is tested separately

图4.

导通电阻

图5.

关断漏电流

t_RISE= 2.5ns

t_FALL= 2.5ns

DA B

Dn

C

V

SW

CC

V_OUT

90%

_CC/2

90%

_CC/2

R

GND R_S

L

Input– V_/OE, V

Sel

V

GND

10%

90%

GND

V

Sel

V

OH

GND

90%

Output- V

OUT

R_L, R , an C_Lar fu ctions of FODa0p73liLcation

S

environment (se AC Tables for spe ific v lues)

C_Linclu es test fixture an stra capacitance

V_OL

t_ON

t_OFF

图6.

交流测试电路负载

图7.

开通/关断波形

图8.

传输延迟 (t_Rt_F– 500ps)

图9.

通道间相位差

DA/Bn

Capacitance

Meter

S

Capacitance

Meter

V_SEL=0 or V_CC

DA/Bn

图10.

通道关断电容

图11.

通道导通电容

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

7

测试框图 (续)

t_RISE= 2.5ns

V_cc

Input - V_Sel

HSD

9 %

V_cc/2

n

Dn

V

SW1

1 %

0V

V_OUT

C

L

GND

V

R

L

SW2

V_OUT

GND

0.9*V_o

t

GND

0.9*V_o

t

R

S

t_BBM

V

Sel

R_L, R_S, and C_Lar functions of FODa0p7pl3icLation

environment (see AC Tables for specific v lues).

C_Lincludes test fixture and stra capacitance.

GND

图12.

先开后合间隔时序

Network Analyzer

R_S

V_IN

V

GND

S

GND

V_OUT

V

Sel

GND

R_T

GND

R_Sand R_Tare functions of the application

environment (see AC Tables for specific values).

图13.

带宽

Network Analyzer

R

S

V

IN

V

S

GND

R

T

GND

V

GND

Sel

V

OUT

GND

R

T

R_Sand R_Tare functions of the application

environment (see AC Tables for specific values).

GND

Off isolation = 20 Log (V_OUT/ V_IN)

图14.

通道的关断隔离

Network Analyzer

NC

R

S

V

IN

V

GND

S

GND

V

Sel

GND

R

T

GND

V

OUT

GND

R

T

R_Sand R_Tare functions of the application environment

(see AC Tables for specific values).

GND

Crosstalk = 20 Log (V_OUT/ V_IN

)

图15.

非相邻通道间串扰

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

8

物理尺寸测试

图16. 24-引脚，UMLP

Product-Specific Dimensions

Description

Nominal Values (mm)

Description

Nominal Values (mm)

Overall Height

Pkg Standoff

0.500

0.026

0.152

0.200

Lead Length (23x)

Lead Length, Pin 1 (1x)

Lead Pitch

0.4

0.5

0.4

3.4

2.5

Lead Thickness

Lead Width (24x)

Body Length (X)

Body Width (Y)

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

9

图 17.

Tape and Reel Packing Specification, page 1

FSA642 • Rev. 1.1.2

www.fairchildsemi.com

10

图 18.

Tape and Reel Packing Specification, page 2

FSA642 • Rev. 1.1.2

www.fairchildsemi.com

11

www.fairchildsemi.com

FSA642 • Rev. 1.1.2

12

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FSA642UMX
厂家：	ONSEMI
描述：	小功率，三端口，高速差分开关开关光电二极管输出元件
文件：	总14页 (文件大小：1342K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FSA642UMX [ONSEMI]

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