FSA551UCX [ONSEMI]
Dual SPST Depletion Mode Audio Switch;型号: | FSA551UCX |
厂家: | ONSEMI |
描述: | Dual SPST Depletion Mode Audio Switch |
文件: | 总10页 (文件大小:382K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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November 2014
FSA551
Dual SPST Depletion Mode Audio Switch
Features
Description
The FSA551 is a high-performance dual single-pole
single-throw (SPST x 2) audio switch. The Depletion
Mode technology allows the device to conduct signals
when there is no VCC available and to isolate signals
when VCC is present. During signal conduction, the
Depletion Mode gate control allows the FSA551 to
achieve excellent THD+N performance while consuming
minimal power.
.
.
.
.
.
.
.
.
.
.
.
Dual SPST
Depletion Mode Technology
-3 dB Bandwidth: 240 MHz
VCC-OFF: 1.5 V to 3.0 V
VCC-ON: 0 V to 0.2 V
VSW-OFF: -0.3 V to 3 V
Related Resources
VSW-ON: -0.3 V to 3 V
. FSA551 Evaluation Board
RON: 0.38 Ω Typical
Applications
RON Flat: 0.01 Ω (Typical)
THD+N: 0.0005% (Typical)
Fairchild Green, RoHS Compliant, Halogen Free
.
.
Smart Phones
Tablets, Ultra Books
1A
2A
SW1
SW2
1B
2B
VCC
VCC
3MΩ
3MΩ
#1S
#2S
Depletion
Gate
Control
V
CC
RPD
CBYP
5MΩ
0.1μF
GND
Figure 1. Top Level Block Diagram
Ordering Information
Operating
Temperature Range
Part Number
Top Mark
Package
Packing Method
9-Ball WLCSP, 0.40 mm Pitch,
1.215 x 1.385 x 0.58 mm (Nominal)
3000 Units on
Tape & Reel
FSA551UCX
-40 to 85°C
U9
© 2014 Fairchild Semiconductor Corporation
FSA551 • Rev. 1.7
www.fairchildsemi.com
Pin Configuration
1
2
3
2
3
1
VCC
1B
VCC
1A
1A
1B
A
B
A
B
1.385mm
1.385mm
NC
2B
NC
2A
2A
2B
C
C
GND
GND
#1S
#2S
#2S
#1S
1.215mm
1.215mm
Top Through View
Bottom View
Figure 2. Top Through View
Figure 3. Bottom View
Pin Descriptions
Pin #
Name
Type
Description
A1
A3
C1
A2
B2
C2
B1
B3
C3
1A
1B
Depletion I/O
Depletion I/O
Control
A-Port of Switch 1 (Normally Closed)
B-Port of Switch 1 (Normally Closed)
Select to Enable/Disable SW1 (Enable LOW)
Power Supply Input
#1S
VCC
NC
Power Supply
No Connect
Ground
Do Not Connect
GND
2A
Ground
Depletion I/O
Depletion I/O
Control
A-Port of Switch 2 (Normally Closed)
B-Port of Switch 2 (Normally Closed)
Select to Enable/Disable SW2 (Enable LOW)
2B
#2S
Table 1.
Depletion Mode Control Truth Table
VCC
#1S
#2S
Switch 1
Switch 2
LOW
HIGH
HIGH
HIGH
X
X
ON
OFF
ON
ON
OFF
OFF
ON
HIGH
LOW
HIGH
HIGH
HIGH
LOW
OFF
Table 2.
Component
CBYP
Recommended External Component
Description
Vendor
Parameter Min. Typ. Unit
0.65 0.1 µF
0.1 µF, 10%, 6.3 V, X5R, 0201
Murata GRM033R60J104K
C
© 2014 Fairchild Semiconductor Corporation
FSA551 • Rev. 1.7
www.fairchildsemi.com
2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min. Max. Unit
VCC
Supply/Control Voltage
-0.5
-0.5
-0.5
-0.5
4.6
4.6
3.3
3.3
350
V
V
VCNTRL Control Input Voltage
#1S, #2S
VSW(ON) DC Switch I/O Voltage (Switch Conducting)
VSW(OFF) DC Switch I/O Voltage (Switch Isolated)
1A, 1B, 2A, 2B
V
1A, 1B, 2A, 2B
V
ISW
ISWPEAK Peak Switch Current
Human Body Model, ANSI/ESDA/JEDEC
Switch I/O Current
VCC=0 V (Switch Conducting)
mA
Pulsed at 1 ms Duration,
<10% Duty Cycle
500
mA
I/O Ports
7
5
JS-001-2012
All Other Pins
ESD
Charged Device Model, JEDEC: JESD22-C101
2
kV
Contact
Air Gap
8
IEC 61000-4-2 System
15
+85
97
+150
TA
Absolute Maximum Operating Temperature
Thermal Resistance, Junction-to-Ambient
Storage Temperature
-40
-65
°C
°C/W
°C
2S2P JEDEC std. PCB
JA
TSTG
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding these ratings or designing to Absolute Maximum Ratings.
Symbol
Parameter
Min. Max. Unit
VCC(ON) Supply Voltage with Depletion Switch Conducting (1A=1B; 2A=2B)
0
0.2
3.0
3.0
3.0
3.0
V
V
V
V
V
VCC(OFF) Supply Voltage with Depletion Switch Isolated (1A≠1B; 2A≠2B; #1S=#2S=HIGH)
1.5
-0.3
-0.3
0
VSW(ON) DC Switch I/O Voltage
VSW(OFF) DC Switch I/O Voltage
VCNTRL Control Input Voltage
Switch Conducting
Switch Isolated
#1S, #2S
© 2014 Fairchild Semiconductor Corporation
FSA551 • Rev. 1.7
www.fairchildsemi.com
3
DC Electrical Characteristics
Unless otherwise specified, typical values are for TA=25ºC.
TA=-40°C to +85°C
Symbol
Parameter
Condition
VCC (V)
Unit
Min. Typ. Max.
VCC(HYS) Supply Voltage Hysteresis
450
mV
µA
Switch-to-GND Leakage
ION
1A=2.6 V, 1B=Float,
2A=2.6 V, 2B=Float
0
0.1
0.1
7
5
Current (Switch Conducting)
1A =2.6 V, 1B=GND,
2A=2.6 V, 2B=GND,
#1S=#2S=VCC
Switch-to-GND Leakage
IOFF
1.8
10
15
µA
Current (Switch Isolated)
Increase in ICC per Control
Voltage
ICCT
#1S or #2S=1.2 V
3.0
0
µA
Ω
RON
Switch On Resistance
ISW=100 mA, VSW=-0.3 V to 3 V
ISW=100 mA, VSW=-0.3 V to 3 V
ISW=100 mA, VSW=-0.3 V to 3 V
0.38 0.60
0.01
Switch On Resistance
Difference, Channel to Channel
ΔRON
0
Ω
RFLAT(ON) On Resistance Flatness
0
0.01
5.0
Ω
RPD
RPU
VCC Pull-Down Resistance
Control Pull-Up Resistance
<0.2
<0.2
MΩ
MΩ
3.0
Switch Isolated, #1S=#2S=VCC 1.5 - 3.0
70
120
0.5
ICC
Quiescent Supply Current
µA
Switch On
0.2
0.1
VIH
VIL
Select Pin Input High Voltage
Select Pin Input Low Voltage
1.5 – 3.0
1.5 – 3.0
1.2
V
V
0.55
© 2014 Fairchild Semiconductor Corporation
FSA551 • Rev. 1.7
www.fairchildsemi.com
4
AC Electrical Characteristics
Unless otherwise specified, typical values are for TA=25°C.
TA=- 40°C to +85°C
Uni
t
Symbol
Parameter
Condition
VCC (V)
Min. Typ. Max.
RL=2 kΩ, CL=10 pF, VSW=3 V,
(Measured 90/10%), Figure 5
tON
Turn-On Time VCC to Output
Turn-Off Time VCC to Output
1.8 → 0
0 → 1.8
445
175
µs
µs
RL=2 kΩ, CL=10 pF, VSW=3 V,
(Measured 90/10%), Figure 5
tOFF
nA=2 kΩ to 2.85 V, nB=1 Ω//10 pF
to GND, #nS= 1.8 → 0 V,
(Measured 20/80%), Figure 5
tONS
Turn-On Time Control Pin
Turn-Off Time Control Pin
1.8
1.8
205
29
µs
µs
nA=2 kΩ to 2.85 V, nB=1 Ω//10 pF
to GND, #nS= 0 → 1.8 V,
(Measured 20/80%), Figure 4,
Figure 5
tOFFS
nA=2 kΩ to GND, nB=1 Ω to GND,
#nS=VCC, Port B VSW=600 mVPP
Ground Referenced, (Measure at
f=20 kHz), Figure 7
OIRRA
Port A Off Isolation
1.8
1.8
-75
dB
dB
nA=2 kΩ to 2.85 V, nB=1 Ω to
GND, #nS=VCC, Port A VDC
300 mVPP(AC), (Measure at
f=20 kHz), Figure 6
+
OIRRB
Port B Off Isolation
-3dB Bandwidth
-100
BW
RL=2 kΩ, CL=0 pF
0
0
240
MHz
%
RL=2 kΩ, f=20 Hz to 20 kHz,
DC Bias=0 V, VSW=600 mVPP
Measurement BW < 22 kHz
Total Harmonic Distortion +
Noise
THD+N
,
0.0005
Capacitance
TA= +25°C
Symbol
Parameter
Condition
VCC (V)
Unit
Min.
Typ. Max.
CON
On Capacitance
Off Capacitance
f=1 MHz, 400 mVPP, 1A, 1B, 2A, 2B
0
21
pF
pF
pF
f=1 MHz, 400 mVPP, 1A, 1B, 2A,
2B, #1S=#2S=VCC
COFF
1.8
1.8
25
CCTRL Control Pin Capacitance f=1 MHz, 400 mVPP, #1S, #2S
2.5
Oscillator Frequency
TA= +25°C
Symbol
Parameter
Oscillator Frequency(1)
Condition
VCC (V)
Unit
Min. Typ.
Max.
fOSC
Oscillator Enabled
Oscillator Enabled
1.8
1.8
775
kHz
%
Oscillator Frequency Tolerance Over
Process & Temperature(1)
fOSC%
30
Note:
1. Parameters guaranteed by Design and Characterization.
© 2014 Fairchild Semiconductor Corporation
FSA551 • Rev. 1.7
www.fairchildsemi.com
5
Timing Diagrams
2KΩ
2.85V
1A
1B
2A
SW1
SW2
2B
VCC
VCC
3MΩ
3MΩ
#1S
#2S
Depletion
Gate
Control
V
CC
1Ω
10pF
RPD
CBYP
5MΩ
0.1μF
GND
Figure 4. tON/tOFF, tONS/tOFF
90%
10%
VCC
tOFF
80%
tON
20%
nA
Figure 5. Turn-On / Turn-Off Timing
2KΩ
2.85V DC
300mVpp
1A
2A
SW1
SW2
1B
2B
VCC
VCC
3MΩ
3MΩ
#1S
#2S
Depletion
Gate
Control
V
CC
1Ω
RPD
CBYP
5MΩ
0.1μF
GND
Figure 6. Off Isolation (B Port)
1A
2A
2B
SW1
SW2
2KΩ
1B
VCC
VCC
3MΩ
3MΩ
600mVpp
#1S
#2S
Depletion
Gate
Control
V
CC
RPD
CBYP
5MΩ
1Ω
0.1μF
GND
Figure 7. Off Isolation (A Port) / Cross Talk
© 2014 Fairchild Semiconductor Corporation
FSA551 • Rev. 1.7
www.fairchildsemi.com
6
Product-Specific Dimensions
E
D
X
Y
0.2075 mm
0.2925 mm
1.215 .03 mm
1.385 .03 mm
© 2014 Fairchild Semiconductor Corporation
FSA551 • Rev. 1.7
www.fairchildsemi.com
7
0.03 C
E
E
A
2X
B
D
0.40
A1
ꢄꢀꢁꢂꢇꢋꢅ
Cu Pad (Bottom)
BALL A1
INDEX AREA
0.40
ꢄꢀꢁꢉꢇꢋꢅ
Solder Mask
0.03 C
2X
RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
TOP VIEW
0.06 C
ꢀꢁꢉꢊꢈꢀꢁꢀꢇꢈ
ꢀꢁꢂꢀꢉꢀꢁꢀꢂꢀ
ꢀꢁꢋꢈꢇꢀꢁꢀꢉꢈ
0.05 C
C
SEATING
PLANE
D
SIDE VIEWS
NOTES
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCE PER
ASME Y14.5M, 2009.
0.005
C A B
ꢀꢁꢂꢃꢀꢀꢁꢀꢂ
9X
0.40
D. DATUM C IS DEFINED BY THE
SPHERICAL CROWNS OF THE BALLS.
E. FOR DIMENSIONS D,E,X, AND Y SEE
PRODUCT DATASHEET.
C
B
A
ꢄ<ꢅꢆꢀꢁꢀꢇꢈ
0.40
F. DRAWING FILNAME: MKT-UC009Ak rev3
2 3
1
E
ꢄ;ꢅꢆꢀꢁꢀꢇꢈ
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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