FQP9N30 [ONSEMI]
功率 MOSFET，N 沟道，QFET®， 300 V，9 A，450 mΩ，TO-220;
| 型号： | FQP9N30 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，QFET®， 300 V，9 A，450 mΩ，TO-220 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FQP9N30
N-Channel QFET) MOSFET
300 V, 9.0 A, 450 mW
Description
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on−state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
www.onsemi.com
G
D
Features
S
TO−220
• 9.0 A, 300 V, R
= 450 mW (Max.) @ V = 10 V,
GS
DS(on)
CASE 340AT
I = 4.5 A
D
• Low Gate Charge (Typ. 17 nC)
• Low Crss (Typ. 16 pF)
• 100% Avalanche Tested
D
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
C
Parameter
Drain−Source Voltage
Symbol
Value
300
Unit
V
G
V
DSS
Drain Current − Continuous (T = 25°C)
I
D
9.0
A
C
S
− Continuous (T = 100°C)
5.7
A
C
Drain Current − Pulsed (Note 1)
Gate−Source Voltage
I
36
A
DM
ORDERING INFORMATION
V
GSS
30
V
See detailed ordering and shipping information on page 2 of
this data sheet.
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
E
420
mJ
A
AS
I
9.0
AR
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
E
9.8
mJ
V/ns
W
AR
dv/dt
4.5
Power Dissipation (T = 25°C)
P
98
C
D
− Derate above 25°C
0.78
−55 to +150
W/°C
°C
Operating and Storage Temperature
Range
T , T
J STG
Maximum Lead Temperature for Solder-
ing, 1/8″ from Case for 5 seconds
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L = 8.64 mH, I = 9.0 A, V = 50 V, R = 25 W starting T = 25°C.
AS
DD
G
J
3. I ≤ 9.0 A, di/dt ≤ 200 A/ms, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
© Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
February, 2017 − Rev. 2
FQP9N30/D
FQP9N30
THERMAL CHARACTERISTICS
Symbol
Parameter
FQP9N30
1.28
Unit
°C/W
°C/W
R
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
N/A
Tape Width
Quantity
FQP9N30
FQP9N30
TO−220
Tube
N/A
50 units
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
300
−
−
−
−
V
DSS
GS
D
DBV
/DT
Breakdown Voltage Temperature
Coefficient
0.28
V/°C
= 250 mA, Referenced to 25°C
DSS
D
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= 300 V, V = 0 V
−
−
−
−
−
−
−
−
1
mA
mA
nA
nA
DSS
DS
GS
= 240 V, T = 125°C
10
DS
GS
GS
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= 30 V, V = 0 V
100
−100
GSSF
DS
I
= −30 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
R
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = 250 mA
3.0
−
−
5.0
0.45
−
V
W
S
GS(th)
GS
D
Static Drain−Source On−Resistance
Forward Transconductance
= 10 V, I = 4.5 A
0.35
4.9
DS(on)
D
g
FS
= 50 V, I = 4.5 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 25 V, V = 0 V, f = 1.0 MHz
−
−
−
570
120
16
740
155
20
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= 150 V, I = 9.0 A, R = 25 W
−
−
−
−
−
−
−
16
120
27
40
250
65
110
22
−
ns
ns
d(on)
DD
D
G
(Note 4)
t
r
t
ns
d(off)
t
f
48
ns
Q
V
DS
= 240 V, I = 9.0 A, V = 10 V
17
nC
nC
nC
g
D
GS
(Note 4)
Q
3.9
9.2
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
9.0
36
1.5
−
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
GS
V
GS
= 0 V, I = 9.0 A
−
V
S
t
= 0 V, I = 9.0 A, dI / dt = 100 A/ms
170
1.4
ns
mC
rr
S
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
www.onsemi.com
2
FQP9N30
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
101
6.5 V
6.0 V
Bottom : 5.5 V
150°C
25°C
100
100
−55°C
250 ms Pulse Test
= 25°C
T
C
V
= 50 V
10−1
DS
250 ms Pulse Test
10−1
10−1
100
101
2
4
6
8
10
VDS , Drain−Source Voltage [V]
VGS , Gate−Source Voltage [V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
1
10
V
GS = 10V
VGS = 20V
0
10
V
= 0 V
GS
250 ms Pulse Test
0.5
0
150°C
25°C
T
= 25°C
J
−1
10
0
6
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source−Drain voltage [V]
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
1200
1000
800
600
400
200
0
12
10
8
C
iss = Cgs + Cgd (C = shorted)
ds
= Cds + C
VDS = 60V
Coss
gd
Crss = C
gd
VDS = 150V
VDS = 240V
C
iss
C
oss
6
V
= 0 V
GS
4
f = 1 MHz
C
rss
2
I
D
= 9.0 A
15
0
−1
0
10
1
10
0
3
6
9
12
18
10
QG, Total Gate Charge [nC]
VDS , Drain−Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
3
FQP9N30
Typical Characteristics
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
0.5
0.0
V
= 0 V
= 250 mA
V
D
= 10 V
GS
GS
I
D
I
= 4.5 A
150
−100
−50
0
50
100
150
200
−100
−50
0
50
100
200
T , Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
10
8
102
Operation in This Area
is Limited by R
DS(on)
100ms
101
100
10−1
1 ms
10 ms
6
DC
4
2
T
C
T
J
= 25°C
= 150°C
Single Pulse
0
100
101
102
25
50
75
100
125
150
TC , Case Temperature [oC]
VDS , Drain−Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
100
D=0.5
Z
(t) = 1.28 °C/W Max.
JC
q
Duty Factor, D = t /t
0.2
0.1
1
2
T
JM
− T = P
• Z (t)
q
DM JC
C
10−1
0.05
PDM
0.02
t1
0.01
t2
single pulse
10−2
10−5
10−4
10−3
10−2
10−1
100
101
t1 , Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
www.onsemi.com
4
FQP9N30
VGS
Same Type
as DUT
50KΩ
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 12. Gate Charge Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
toff
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
−−−−−−−−−−−
BVDSS −VDD
L
1
2
2
−−−
EAS
=
LIAS
VDS
ID
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
tp
t p
Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
www.onsemi.com
5
FQP9N30
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
Sdv/dtcontrolled by RG
SISD controlled by pulse period
Gate Pulse Width
VGS
−−−−−−−−−−−−−−−
Gate Pulse Period
D =
10V
( Driver )
I
FM , Body Diode Forward Current
ISD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recoverydv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.onsemi.com
6
FQP9N30
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE O
www.onsemi.com
7
FQP9N30
QFET is a registered trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
FQP9N30/D
◊
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
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