FQP47P06 [ONSEMI]
功率 MOSFET，P 沟道，QFET®，-60 V，-47 A，26 mΩ，TO-220;
| 型号： | FQP47P06 |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，P 沟道，QFET®，-60 V，-47 A，26 mΩ，TO-220 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – P-Channel, QFET)
-60 V, -47 A, 26 mW
V
R
MAX
I MAX
D
DSS
DS(on)
−60 V
26 mW @ −10 V
−47 A
FQP47P06
S
Description
This P−Channel enhancement mode power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially tailored to reduce
on−state resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC motor control,
and variable switching power applications.
G
D
P−Channel MOSFET
Features
• −47 A, −60 V, R
= 26 mW (Max.) @ V = −10 V,
GS
DS(on)
I = −23.5 A
D
• Low Gate Charge (Typ. 84 nC)
• Low Crss (Typ. 320 pF)
G
• 100% Avalanche Tested
D
S
• 175°C Maximum Junction Temperature Rating
TO−220−3LD
CASE 340AT
MARKING DIAGRAM
$Y&Z&3&K
FQP
47P06
$Y
&Z
&3
&K
= Logo
= Assembly Plant Code
= 3−Digit Plant Code
= 2−Digits Lot Run Traceability Code
FQP47P06 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
FQP47P06
TO−220−3LD 1000 Units / Tube
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
May, 2022 − Rev. 3
FQP47P06/D
FQP47P06
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
Symbol
Parameter
FQP47P06
−60
Unit
V
V
DSS
Drain−Source Voltage
Drain Current
I
D
− Continuous (T = 25°C)
−47
A
C
− Continuous (T = 100°C)
−33.2
−188
25
A
C
I
Drain Current (Note 1)
Gate−Source Voltage
− Pulsed
A
DM
V
GSS
V
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
820
mJ
A
AS
AR
I
−47
E
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
16
mJ
V/ns
W
AR
dv/dt
−7.0
P
Power Dissipation (T = 25°C)
160
D
C
− Derate above 25°C
1.06
W/°C
°C
°C
T , T
Operating and Storage Temperature Range
−55 to +175
300
J
STG
T
L
Maximum Lead Temperature for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.43 mH, I = −47 A, V = −25 V, R = 25 W, Starting T = 25°C
AS
DD
G
J
3. I ≤ −47 A, di/dt ≤ 300A/ms, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
THERMAL CHARACTERISTICS
Symbol
Characteristic
FQP47P06
0.94
Unit
°C/W
°C/W
°C/W
R
R
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Case−to−Sink, Typ.
Thermal Resistance, Junction−to−Ambient, Max.
q
JC
0.5
q
CS
R
62.5
q
JA
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2
FQP47P06
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−Source Breakdown Voltage
V
I
= 0 V, I = −250 mA
−60
−
−
−
−
V
DSS
GS
D
DBV
/ DT
Breakdown Voltage Temperature Coefficient
= −250 mA, Referenced to 25°C
−0.06
V/°C
DSS
D
J
I
Zero Gate Voltage Drain Current
V
V
V
V
= −60 V, V = 0 V
−
−
−
−
−
−
−
−
−1
−10
−100
100
mA
mA
nA
nA
DSS
DS
GS
= −48 V, T = 150°C
DS
GS
GS
C
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
= −25 V, V = 0 V
DS
GSSF
I
= 25 V, V = 0 V
DS
GSSR
ON CHARACTERISTICS
V
)
Gate Threshold Voltage
V
DS
V
GS
V
DS
= V , I = −250 mA
−2.0
−
−
−4.0
0.026
−
V
W
S
GS(th
DS(on)
GS
D
R
Static Drain−Source On−Resistance
Forward Transconductance
= −10 V, I = −23.5 A
0.021
21
D
g
FS
= −30 V, I = −23.5 A (Note 4)
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −25 V, V = 0 V, f = 1.0 MHz
−
−
−
2800
1300
320
3600
1700
420
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
V
= −30 V, I = −23.5 A, R = 25 W
−
−
−
−
−
−
−
50
450
100
195
84
110
910
210
400
110
−
ns
ns
d(on)
DD
D
G
(Note 4, 5)
t
r
t
ns
d(off)
t
f
ns
Q
V
DS
= −48 V, I = −47 A, V = −10 V
nC
nC
nC
g
D
GS
(Note 4, 5)
Q
18
gs
gd
Q
44
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATING
I
Maximum Continuous Drain−Source Diode Forward Current
Maximum Pulsed Drain−Source Diode Forward Current
−
−
−
−
−
−
−
−47
−188
−4.0
−
A
A
S
I
SM
V
SD
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = −47 A
−
V
GS
S
t
= 0 V, I = −47 A,
130
0.55
ns
mC
rr
GS
S
dI / dt = 100 A/ms (Note 4)
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse width ≤ 300 ms, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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3
FQP47P06
TYPICAL CHARACTERISTICS
V
GS
2
10
Top:
− 15.0 V
− 10.0 V
− 8.0 V
− 7.0 V
− 6.0 V
− 5.5 V
− 5.0 V
2
1
0
10
10
10
1
175°C
25°C
10
Bottom: − 4.5 V
0
−55°C
10
* Notes:
1. 250 ms Pulse Test
* Notes:
1. V = −30 V
DS
2. T = 25°C
2. 250 ms Pulse Test
C
−1
10
−1
0
1
2
4
6
8
10
10
10
10
−V , Drain−Source Voltage (V)
DS
−V , Gate−Source Voltage (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.10
0.08
0.06
0.04
0.02
0.00
2
10
V
= −10 V
GS
1
10
175°C
25°C
V
= −20 V
GS
0
10
* Notes:
1. V = 0 V
GS
* Note: T = 25°C
2. 250 ms Pulse Test
J
−1
10
0
100
200
300
400
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
−I , Drain Current (A)
D
−V , Source−Drain Voltage (V)
SD
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
12
8000
7000
6000
5000
4000
3000
2000
1000
0
C
C
C
= C + C (C = shorted)
iss
gs
gd
ds
= C + C
gd
oss
rss
ds
C
oss
10
= C
gd
V
DS
= −30 V
* Notes:
8
6
4
2
0
V
DS
= −48 V
C
1. V = 0 V
iss
GS
2. f = 1 MHz
C
rss
* Note: I = −47 A
D
−1
0
1
0
10 20 30 40 50 60 70 80 90
Q , Total Gate Charge (nC)
10
10
10
V
DS
, Drain−Source Voltage (V)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FQP47P06
TYPICAL CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
* Notes:
1. V = 0 V
* Notes:
1. V = −10 V
2. I = −23.5 A
D
0.5
GS
GS
2. I = −250 mA
D
0.0
−100
−50
0
50
100
150
200
−100
−50
0
50
100
150
200
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Figure 8. On−Resistance Variation vs.
Temperature
Temperature
3
50
40
30
20
10
0
10
Operation in This Area
is Limited by R
DS(on)
2
10
100 ms
1 ms
10 ms
DC
1
10
10
* Notes:
0
1. T = 25°C
2. T = 175°C
3. Single Pulse
C
J
−1
10
0
1
2
10
10
−V , Drain−Source Voltage (V)
10
25
50
75
100
125
150
175
T , Case Temperature (°C)
DS
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
0
10
D = 0.5
0.2
0.1
* Notes:
1. Z
(t) = 0.94°C/W Max.
q
JC
−1
10
2. Duty Factor, D = t / t
1
x Z
2
0.05
0.02
3. T − T = P
(t)
JC
q
JM
C
DM
P
DM
0.01
single pulse
t
1
−2
10
t
2
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t , Square Wave Pulse Duration (s)
1
Figure 11. Transient Thermal Response Curve
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5
FQP47P06
VGS
Same Type
as DUT
Qg
50 kW
200 nF
12 V
−10 V
300 nF
Qgs
Qgd
VDS
VGS
DUT
−3 mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
RL
ton
tr
toff
VDS
td(on)
VGS
td(off)
VDD
tf
VGS
RG
10%
DUT
−10 V
90%
VDS
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
2
EAS
+
LIAS
L
2
BVDSS * VDD
VDS
tp
Time
ID
VDD
VDS (t)
RG
VDD
ID (t)
DUT
−10 V
IAS
tp
BVDSS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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6
FQP47P06
+
VDS
_
DUT
ISD
L
Driver
RG
Compliment of DUT
(N−Channel)
VDD
VGS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
D +
VGS
Gate Pulse Period
10 V
(Driver)
Body Diode Reverse Current
IRM
ISD
(DUT)
di/dt
IFM, Body Diode Forward Current
VSD
VDS
(DUT)
Body Diode
VDD
Forward Voltage Drop
Body Diode Recoverydv/dt
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
QFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
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