FQP11N40C [ONSEMI]
N 沟道 QFET® MOSFET 400V，10.5A，530mΩ;
| 型号： | FQP11N40C |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 QFET® MOSFET 400V，10.5A，530mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FQP11N40C, FQPF11N40C
QFET) MOSFET, N-Channel
400 V, 10.5 A, 530 mW
Description
This N−Channel enhancement mode power MOSFET is produced
using ON Semiconductor proprietary planar stripe and DMOS
technology. This advanced MOSFET technology has been especially
tailored to reduce on−state resistance, and to provide superior
switching performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
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G
G
D
S
D
Features
S
• 10.5 A, 400 V, R
= 530 mW (Max.) @ V = 10 V, I = 5.25 A
DS(on)
GS
D
TO−220−3LD
CASE 340AT
TO−220F−3SG
CASE 221AT
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
D
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
G
S
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
June, 2018 − Rev. 4
FQPF11N40C/D
FQP11N40C, FQPF11N40C
ORDERING INFORMATION
Device
Device Marking
Package
Shipping
FQP11N40C
FQP11N40C
TO−220
(Pb−Free)
1,000 Units / Tube
FQPF11N40C
FQPF11N40C
TO−220 Fullpack, TO−220F−3SG
(Pb−Free)
1,000 Units / Tube
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
FQP11N40C
FQPF11N40C
Unit
400
V
A
A
A
VDSS
Drain to Source Voltage
10.5
6.6
42
10.5 *
6.6 *
42 *
Drain Current
−Continuous (T = 25°C)
C
ID
−Continuous (T = 100°C)
C
IDM
Drain Current
− Pulsed
(Note 1)
30
V
VGSS
EAS
Gate to Source Voltage
360
mJ
Single Pulsed Avalanche Energy
(Note 2)
(Note 1)
(Note 1)
(Note 3)
11
13.5
4.5
A
IAR
EAR
dv/dt
Avalanche Current
mJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
V/ns
135
44
W
W/°C
°C
Power Dissipation (T = 25°C)
C
PD
− Derate above 25°C
1.07
0.35
−55 to 150
300
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for
5 Seconds
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.7 mH, I = 10.5 A, V = 50 V, R = 25 W, starting T = 25°C.
AS
DD
G
J
3. I ≤ 10.5 A, di/dt ≤ 200 A/ms, V ≤ BV
starting T = 25°C.
SD
DD
DSS,
J
THERMAL CHARACTERISTICS
Symbol
Parameter
FQP11N40C
0.93
FQPF11N40C
2.86
Unit
R
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
°C/W
°C/W
q
JC
JA
R
62.5
62.5
q
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2
FQP11N40C, FQPF11N40C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Test Conditions
Symbol
Parameter
Min
Typ
Max
Unit
Off Characteristics
V
I
= 0 V, I = 250 mA
BV
Drain−Source Breakdown Voltage
400
V
GS
D
DSS
ΔBVDSS
ΔTJ
= 250 mA, Referenced to 25°C
Breakdown Voltage Temperature Coefficient
0.54
V/°C
D
V
V
V
V
= 400 V, V = 0 V
I
Zero Gate Voltage Drain Current
1
mA
mA
nA
nA
DS
GS
DSS
= 320 V, T = 125°C
10
DS
GS
GS
C
= 30 V, V = 0 V
I
Gate−Body Leakage Current, Forward
Gate−Body Leakage Current, Reverse
100
−100
DS
GSSF
= −30 V, V = 0 V
I
DS
GSSR
On Characteristics
V
DS
V
GS
V
DS
= V , I = 250 mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
W
s
GS
D
r
Static Drain−Source On−Resistance
Forward Transconductance
= 10 V, I = 5.25 A
0.43
7.1
0.53
DS(on)
D
g
FS
= 40 V, I = 5.25 A
D
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
840
250
85
1090
325
110
pF
pF
pF
V
DS
= 25 V, V = 0 V, f = 1 MHz
GS
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
Turn−On Delay Time
14
89
81
81
28
4
40
190
170
170
35
ns
ns
V
= 200 V, I = 10.5 A, R = 25 W
D G
DD
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(Note 4)
td(off)
tf
ns
ns
V
DS
= 320 V, I = 10.5 A, R = 25 W
D G
Qg
nC
nC
nC
(Note 4)
Qgs
Qgd
15
Drain−Source Diode Characteristics and Maximum Ratings
IS
10.5
42
A
A
Maximum Continuous Drain−Source Diode
Forward Current
ISM
Maximum Pulsed Drain−Source Diode
Forward Current
VSD
trr
1.4
V
Drain−Source Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 10.5 A
S
GS
290
2.4
ns
mC
= 0 V, I = 10.5 A,
GS
S
dI /dt = 100 A/ms
Qrr
Reverse Recovery Charge
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature.
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3
FQP11N40C, FQPF11N40C
TYPICAL PERFORMANCE CHARACTERISTICS
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
1
10
150_C
Bottom : 4.5 V
−55_C
25_C
0
10
Notes :
1. 250ms Pulse Test
Notes :
1. VDS = 40V
2. TC = 25_C
2. 250ms Pulse Test
−1
10
0
10
1
10
VGS, Gate−Source Voltage [V]
VDS, Drain−Source Voltage [V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.0
VGS = 10 V
1
10
1.5
1.0
0.5
0
10
150_C
VGS = 20 V
Notes :
1. VGS = 0V
25_C
2. 250ms Pulse Test
Note : T = 25_C
J
−1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
35
40
VSD, Source−Drain voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage Variation vs.
Source Current and Temperature
Figure 3. On−Resistance Variation vs Drain Current
and Gate Voltage
2000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
1800
1600
1400
1200
1000
800
600
400
200
0
gd
C
rss = C
VDS = 100 V
VDS = 250 V
VDS = 400 V
10
8
gd
C
iss
C
oss
6
4
Notes ;
C
rss
1. VGS = 0 V
2. f = 1 MHz
2
Note : ID= 10.5 A
25 30
0
0
5
10
15
20
−1
0
10
1
10
10
QG, Total Gate Charge [nC]
VDS, Drain−Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FQP11N40C, FQPF11N40C
TYPICAL PERFORMANCE CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
Notes :
1. VGS = 0 V
Notes :
1. VGS = 10 V
0.5
= 250 mA
2. ID
2. ID = 5.25 A
0.0
−100
−50
0
50
100
150 200
−100
−50
0
50
100
150
200
TJ, Junction Temperature [_C]
T, Junction Temperature [_C]
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs. Temperature
Operation in This Area
is Limited by RDS(on)
Operation in This Area
is Limited by RDS(on)
2
10
2
10
10 ms
10 ms
100 ms
100 ms
1
1
1 ms
1 ms
10 ms
100 ms
10
10
10 ms
100 ms
DC
DC
0
10
0
10
Notes :
Notes :
1. TC = 25_C
1. TC = 25
C
_
2. T = 150_C
2. T = 15
C
_
J
J
3. Single Pulse
3. Single Pulse
−1
−1
10
10
0
1
10
2
10
3
10
0
1
10
2
10
3
10
10
10
VDS, Drain−Source Voltage [V]
VDS, Drain−Source Voltage [V]
Figure 10. Maximum Safe Operating Area of
FQPF11N40C
Figure 9. Maximum Safe Operating Area of
FQP11N40C
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [°C]
Figure 11. Maximum Drain Current
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5
FQP11N40C, FQPF11N40C
TYPICAL PERFORMANCE CHARACTERISTICS
0
10
10
10
D=0.5
0.2
Notes:
−1
1. Z (t) = 0.93°C/W Max.
q
0.1
JC
2. Duty Factor, D = t /t
1
2
0.05
3. T − T = P
* Z (t)
q
JC
JM
C
DM
0.02
0.01
PDM
single pulse
t1
−2
t2
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t1 , Square W ave Pulse Duration [sec]
Figure 12. Transient Thermal Response Curve of FQP11N40C
D=0.5
0
10
Notes:
0.2
1. Z (t) = 2.86°C/W Max.
q
JC
0.1
2. Duty Factor, D = t /t
1
2
0.05
3. T − T = P
JM
* Z (t)
q
JC
C
DM
−1
10
10
0.02
0.01
PDM
t1
t2
single pulse
−2
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t1 , Square W ave Pulse Duration [sec]
Figure 13. Transient Thermal Response Curve of FQPF11N40C
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6
FQP11N40C, FQPF11N40C
VGS
Same Type
50KΩ
as DUT
Qg
200nF
12V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
Charge
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
BVDSS
BVDSS −VDD
L
1
2
2
EAS
=
LI AS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FQP11N40C, FQPF11N40C
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
Sdv/dtcontrolled by R
G
SI SD controlled by pulse period
Gate Pulse Width
−−−−−−−−−−−−−−−−−−−−−−−−−−
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recoverydv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
All other brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 3−Lead / TO−220F−3SG
CASE 221AT
ISSUE B
DATE 19 JAN 2021
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67439E
TO−220 FULLPACK, 3−LEAD / TO−220F−3SG
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
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