FQD6N40CTM [ONSEMI]
功率 MOSFET,N 沟道,QFET®,400 V,4.5 A,1.0 Ω,DPAK;型号: | FQD6N40CTM |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,QFET®,400 V,4.5 A,1.0 Ω,DPAK 开关 脉冲 晶体管 |
文件: | 总9页 (文件大小:1019K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
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FQD6N40C
®
N-Channel QFET MOSFET
400 V, 4.5 A, 1.0 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
•
•
•
•
4.5 A, 400 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 2.25 A
Low Gate Charge (Typ. 16 nC)
Low Crss (Typ. 15 pF)
100% Avalanche Tested
D
D
G
G
S
D-PAK
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
Parameter
FQD6N40CTM
Unit
V
Drain-Source Voltage
400
4.5
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
2.7
A
IDM
(Note 1)
Drain Current
18
A
VGSS
EAS
IAR
Gate-Source Voltage
30
V
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
270
4.5
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C)*
4.8
mJ
V/ns
W
4.5
2.5
PD
Power Dissipation (TC = 25°C)
48
W
- Derate above 25°C
0.38
-55 to +150
W/°C
°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
FQD6N40CTM
Unit
RθJC
Thermal Resistance, Junction-to-Case, Max.
2.6
110
50
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in2 pad of 2 oz copper), Max.
°C/W
RθJA
©2007 Semiconductor Components Industries, LLC.
October-2017, Rev.3
Publication Order Number:
FQD6N40C/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQD6N40C
FQD6N40CTM
D-PAK
330 mm
16 mm
2500 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
Drain-Source Breakdown Voltage
400
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
ID = 250 μA, Referenced to 25°C
0.54
V/°C
/
ΔTJ Coefficient
VDS = 400 V, VGS = 0 V
VDS = 320 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
IDSS
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 2.25A
VDS = 40 V, ID = 2.25A
Gate Threshold Voltage
2.0
--
--
4.0
1
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
0.83
4.7
gFS
Forward Transconductance
--
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
480
80
625
105
20
pF
pF
pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
15
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
13
65
21
38
16
2.3
8.2
35
140
55
85
20
--
ns
ns
VDD = 200 V, ID = 6A,
RG = 25 Ω
ns
(Note 4)
(Note 4)
ns
Qg
nC
nC
nC
VDS = 320 V, ID = 6A,
GS = 10 V
Qgs
Qgd
V
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
4.5
18
1.4
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 4.5 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = 6 A,
230
1.7
ns
μC
dIF / dt = 100 A/μs
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 13.7 mH, I = 6 A, V = 50V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 6A, di/dt ≤ 200A/μs, V ≤ BV
starting T = 25°C.
J
SD
DD
DSS,
4. Essentially independent of operating temperature.
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2
Typical Characteristics
VGS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
101
101
Bottom: 5.0V
150oC
100
25oC
-55oC
100
※Notes :
1. VDS = 40V
2. 250μs Pulse Test
※Notes :
1. 250μs Pulse Test
2. TC = 25℃
-1
10
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
101
VGS = 10V
100
VGS = 20V
※Notes :
150℃
25℃
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1200
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
VDS = 80V
Crss = C
gd
1000
800
600
400
200
0
VDS = 200V
VDS = 320V
C
iss
C
6
oss
4
※Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※Note : ID = 6A
0
-1
0
10
1
10
0
5
10
15
20
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
Typical Characteristics (Continued)
1.2
1.1
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※Notes:
0.9
1. V = 0 V
2. IDG=S 250 μA
※Notes :
1. VGS = 10 V
2. ID = 2.25 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
T, Junction Temperature [oC]
J
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
2
10
5
Operation in This Area
is Limited by R DS(on)
4
3
2
1
0
1
10 μs
10
100 μs
1 ms
10 ms
0
10
DC
-1
10
※Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
-2
10
100
101
102
25
50
75
100
125
150
3
10
VDS, Drain-Source Voltage [V]
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 9. Maximum Safe Operating Area
D = 0 .5
100
※
N otes
1. Z
:
(t)
= 2.6 ℃ /W M ax.
2. DθuJtCy Factor, D =t1/t2
0.2
0 .1
3. TJM
-
TC
=
P DM
*
Zθ JC(t)
0 .0 5
PDM
10-1
0 .0 2
t1
0 .0 1
sin gle p ulse
t2
1 0-5
10-4
10-3
10-2
10-1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
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4
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT
Qg
12V
200nF
300nF
VDS
VGS
Qgs
Qgd
DUT
I
= const.
G
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
--------------------
BVDSS - VDD
L
1
2
2
----
EAS
=
L IAS
VDS
I D
BVDSS
IAS
RG
VDD
ID (t)
V
VDS (t)
VDD
DUT
GS
t p
t p
Time
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5
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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6
Mechanical Dimensions
TO-252 3L (DPAK)
Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimension in Millimeters
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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