FQB1P50TM_技术文档

Is Now Part of

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MAY 2015

FQB1P50

P-Channel QFET^®MOSFET

- 500 V, - 1.5 A, 10.5 Ω

Description

Features

- 1.5 A, - 500 V, R

I_D= - 0.75 A

= 10.5 Ω (Max.) @ V = - 10 V,

This P-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC), and

electronic lamp ballasts.

•

DS(on)

GS

•

Low Gate Charge (Typ. 11 nC)

Low Crss (Typ. 6.0 pF)

100% Avalanche Tested

•

RoHS Compliant

S

D

G

D²-PAK

S

D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

C

FQB1P50TM

-500

Symbol

Parameter

Unit

V

I

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

-1.5

A

D

C

- Continuous (T = 100°C)

-0.95

-6.0

A

C

I

(Note 1)

Drain Current

- Pulsed

A

DM

V

E

I

Gate-Source Voltage

± 30

V

GSS

AS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

110

mJ

A

-1.5

AR

E

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

6.3

mJ

V/ns

W

AR

dv/dt

-4.5

Power Dissipation (T = 25°C) *

3.13

P

A

D

Power Dissipation (T = 25°C)

63

W

C

- Derate above 25°C

0.51

W/°C

°C

T , T

Operating and Storage Temperature Range

-55 to +150

J

STG

Maximum lead temperature for soldering,

1/8” from case for 5 seconds

T

300

°C

L

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case, Max

Unit

FQB1P50TM

R_JC

1.98

62.5

40

^oC/W

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.

Thermal Resistance, Junction to Ambient (1 in²pad of 2 oz copper), Max.

R_JA

www.fairchildsemi.com

1

FQB1P50 Rev. 1.4

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FQB1P50TM

D2-PAK

330mm

24mm

800

FQB1P50

Elerical Characteristics

T

= 25°C unless otherwise noted

C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

BV

DSS

V

I

= 0 V, I = -250 µA

Drain-Source Breakdown Voltage

-500

--

-

--

V

GS

D

∆BV

DSS

J

Breakdown Voltage Temperature

Coefficient

= -250 µA, Referenced to 25°C

V/°C

D

/

∆T

V

= -500 V, V = 0 V

--

-1

µA

nA

DS

GS

I

Zero Gate Voltage Drain Current

DSS

= -400 V, T = 125°C

-10

DS

GS

C

I

GSSF

= -30 V, V = 0 V

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

-100

100

DS

GSSR

= 30 V, V = 0 V

DS

On Characteristics

V

= V , I = -250 µA

GS(th)

Gate Threshold Voltage

-3.0

--

-5.0

10.5

--

V

Ω

S

DS

GS

DS

GS

D

Static Drain-Source

On-Resistance

R

g

= -10 V, I = -0.75 A

DS(on)

8.0

D

= -50 V, I = -0.75 A

FS

Forward Transconductance

--

1.26

D

Dynamic Characteristics

C

Input Capacitance

--

270

40

350

50

pF

iss

V

= -25 V, V = 0 V,

GS

DS

Output Capacitance

oss

rss

f = 1.0 MHz

Reverse Transfer Capacitance

6.0

8.0

Switching Characteristics

t

d(on)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

--

9.0

25

27

30

11

30

60

65

70

14

--

ns

V

= -250 V, I = -1.5 A,

DD

D

r

R

= 25 Ω

G

d(off)

f

ns

(Note 4)

ns

Q

g

nC

V

= -400 V, I = -1.5 A,

DS

D

gs

gd

2.0

5.6

= -10 V

GS

--

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current

--

-1.5

-6.0

-5.0

--

A

I

SM

Maximum Pulsed Drain-Source Diode Forward Current

V

= 0 V, I = -1.5 A

S

SD

Drain-Source Diode Forward Voltage

Reverse Recovery Time

--

V

GS

t

rr

= 0 V, I = -1.5 A,

200

0.7

ns

µC

GS

S

Q

dI / dt = 100 A/µs

rr

Reverse Recovery Charge

--

F

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 88mH, I = -1.5A, V = -50V, R = 25 Ω, Starting T = 25°C

AS

DD

G

J

3. I ≤ -1.5A, di/dt ≤ 200A/µs, V ≤ BV

Starting T = 25°C

SD

DD

DSS,

J

4. Essentially independent of operating temperature

www.fairchildsemi.com

2

FQB1P50 Rev. 1.4

Typical Characteristics

V_GS

Top :

-15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V

10⁰

Bottom : -5.5 V

10⁰

℃

150

-1

10

℃

25

※

Notes :

μ

※

Notes :

1. 250 s Pulse Test

℃

-55

1. V_DS= -50V

2. 250 s Pulse Test

℃

2. T_C= 25

μ

-2

-1

10

-1

10⁰

10¹

2

4

6

8

10

-V_GS, Gate-Source Voltage [V]

-V_DS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

16

14

12

10

8

V_GS= - 10V

V_GS= - 20V

10⁰

℃

150

℃

25

※

Notes :

1. V_GS= 0V

※

℃

Note : T = 25

J

μ

2. 250 s Pulse Test

-1

6

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

1

2

4

-I_D, Drain Current [A]

-V_SD, Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

12

10

8

600

500

400

300

200

100

0

C

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C

C

V_DS= -100V

V_DS= -250V

gd

V_DS= -400V

C

iss

6

C_oss

※

Notes :

4

1. V_GS= 0 V

2. f = 1 MHz

C

rss

2

※

Note : I_D= -1.5 A

10

0

-1

10

10⁰

10¹

0

2

6

8

12

-V_DS, Drain-Source Voltage [V]

Q_G, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

www.fairchildsemi.com

FQB1P50 Rev. 1.4

3

Typical Characteristics (Continued)

1.2

1.1

1.0

2.5

2.0

1.5

1.0

0.5

0.0

※Notes :

1. V_GS= 0 V

2. I_D= -250 μA

0.9

※

Notes :

1. V_GS= -10 V

2. I_D= -0.75 A

0.8

-100

-50

0

50

100

150

200

-50

0

50

100

150

200

T_J, Junction Temperature [^oC]

T, Junction Temperature [^oC]

J

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

1.5

1.2

0.9

0.6

0.3

0.0

Operation in This Area

is Limited by R _DS(on)

10¹

10⁰

100 µs

1 ms

10 ms

DC

-1

10

※

Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

C

-2

10

10⁰

10¹

10²

10³

25

50

75

100

125

150

℃

T_C, Case Temperature [

]

-V_DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

1 0 ⁰

D = 0 .5

※

N o te s

:

0 .2

0 .1

℃

/W M a x .

1 . Z _θ_C(t)

=

1 .9 8

J

2 . D u ty F a c to r, D = t₁/t₂

3 . T _{J M}

-

T _C

=

P _D

* Z _θ_C(t)

J

M

0 .0 5

1 0 ^-1

0 .0 2

0 .0 1

P_DM

t₁

s in g le p u ls e

t₂

1 0 ^-2

1 0 ^-5

1 0 ^-4

1 0 ^-3

1 0 ^-2

1 0 ^-1

1 0 ⁰

1 0 ¹

t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

www.fairchildsemi.com

FQB1P50 Rev. 1.4

4

Figure 12. Gate Charge Test Circuit & Waveform

V_GS

Same Type

50KΩ

as DUT

Q_g

12V

200nF

-10V

300nF

V_DS

V_GS

Q_gs

Q_gd

DUT

I

= co-3nmsAt.

G

Charge

Figure 13. Resistive Switching Test Circuit & Waveforms

R_L

t _on

t _off

V_DS

t_d(on)

t_r

t_d(off)

t_f

V_DD

V_GS

R_G

10%

DUT

V

-1_G0_SV

90%

V_DS

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV_DSS

--------------------

BV_DSS- V_DD

L

1

2

----

E_AS

=

LI_AS

V_DS

I _D

t _p

Time

V_DD

V_DS(t)

R_G

V_DD

I_D(t)

V

-10V

DUT

GS

I_AS

t _p

BV_DSS

www.fairchildsemi.com

FQB1P50 Rev. 1.4

5

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

+

V_DS

DUT

_

I _SD

L

Driver

R_G

Compliment of DUT

V_DD

(N-Channel)

V_GS

• dv/dt controlled by R_G

• I_SDcontrolled by pulse period

Gate Pulse Width

--------------------------

V_GS

D =

Gate Pulse Period

10V

( Driver )

Body Diode Reverse Current

I _SD

I_RM

( DUT )

di/dt

I_FM, Body Diode Forward Current

V_SD

V_DS

( DUT )

Body Diode

V_DD

Forward Voltage Drop

Body Diode Recovery dv/dt

www.fairchildsemi.com

FQB1P50 Rev. 1.4

6

10.67

9.65

10.67

-A-

1.68

1.00

4

9.45

9.65

8.38

10.00

1.78 MAX

2

0.25 MAX

2

3.80

PLASTIC BODY

STUB

1

3

1

3

1.78

1.14

(2.12)

1.05

5.08

0.99

0.51

M

B A

0.25

LAND PATTERN RECOMMENDATION

UNLESS NOTED, ALL DIMS TYPICAL

5.08

FRONT VIEW - DIODE PRODUCTS VERSION

ALTERNATIVE SUPPLIER DETAIL

-B-

4.83

4.06

6.22 MIN

1.65

1.14

4

6.86 MIN

15.88

14.61

SEE

DETAIL A

2

3

1

3

1

BACK VIEW - DIODE PRODUCTS VERSION

ALTERNATIVE SUPPLIER DETAIL

NOTES: UNLESS OTHERWISE SPECIFIED

A) ALL DIMENSIONS ARE IN MILLIMETERS.

B) REFERENCE JEDEC, TO-263, VARIATION AB.

C) DIMENSIONING AND TOLERANCING PER

DIMENSIONING AND TOLERANCING PER

ASME Y14.5 - 2009.

D) LOCATION OF THE PIN HOLE MAY VARY

(LOWER LEFT CORNER, LOWER CENTER

AND CENTER OF THE PACKAGE).

GAGE PLANE

0.74

0.25

0.33

ꢄ

ꢃ

E) LANDPATTERN RECOMMENDATION PER IPC

TO254P1524X482-3N

0.10

B

F) FILENAME: TO263A02REV8

2.79

1.78

ꢄ

ꢃ

0.25 MAX

(5.38)

SEATING

PLANE

'(7$,/ꢀ$ꢁꢀ527$7('ꢀꢂꢃ

SCALE: 2X

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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1


型号：	FQB1P50TM
厂家：	ONSEMI
描述：	功率 MOSFET，P 沟道，QFET®，-500 V，-1.5 A，10.5 Ω，D2PAK 开关脉冲晶体管
文件：	总9页 (文件大小：930K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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