FPF2172 [ONSEMI]
IntelliMAX™ 高级负载管理产品;
| 型号： | FPF2172 |
| 厂家： | 
ONSEMI |
| 描述： | IntelliMAX™ 高级负载管理产品 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总13页 (文件大小：1124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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April 2016
FPF2172
IntelliMAX™ Advanced Load Management
Description
Features
The FPF2172 is a load switch which combines the
functionality of the IntelliMAX™ series load switch with a
very low forward voltage drop Schottky barrier rectifier.
The integrated solution provides full protection to
systems and loads which may encounter large current
conditions in a very compact MLP 3 x 3 package. This
device contains a 0.125 Ω current-limited P-channel
MOSFET which can operate over an input voltage range
of 1.8-5.5 V. The Schottky diode acts as a barrier so
that no reverse current can flow when the MOSFET is
off and the output voltage is higher than the input
voltage. Switch control is by a logic input (ON) capable
of interfacing directly with low voltage control signals.
Each part contains thermal shutdown protection which
shuts off the switch to prevent damage to the part when
a continuous over-current condition causes excessive
heating.
.
.
.
.
.
.
.
1.8 to 5.5 V Input Voltage Range
Controlled Turn-On
200 mA Current Limit Option
Under-Voltage Lockout (UVLO)
Thermal Shutdown
<1 μA Shutdown Current
Fast Current Limit Response Time:
3 μs to Moderate Over Currents
20 ns to Hard Shorts
.
.
Integrated very Low VF Schottky Diode for Reverse
Current Blocking
RoHS Compliant
When the switch current reaches the current limit, the
part operates in a constant-current mode to prohibit
excessive currents from causing damage. If the
constant current condition still persists after 10 ms,
these parts will shut off the switch and pull the fault
signal pin (FLAGB) low. The switch will remain off until
the ON pin is cycled. The minimum current limit is
200 mA.
Applications
.
.
.
.
.
.
.
PDAs
Cell Phones
GPS Devices
MP3 Players
Digital Cameras
Peripheral Ports
Hot Swap Supplies
These parts are available in a space-saving 6-lead MLP
3 x 3 package.
Ordering Information
Current Limit
Blanking Time
[ms]
Current Liming
Auto-Restart
Time [ms]
Part Number
ON Pin Activity
Top Mark
[mA]
FPF2172
200
10
n/a
Active HI
2172
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
Typical Application
Figure 1.
Typical Application
Block Diagram
Figure 2.
Block Diagram
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
2
Pin Configuration
Figure 3.
3 x 3 MLP (Bottom View)
Pin Descriptions
Pin
1
Name
Description
VIN
NC
Supply Input. Input to the power switch and the supply voltage for the IC
No Connect
2, 8
3, 7
VOUT
Switch Output. Output of the power switch
Fault Output. Active LO, open drain output which indicates an over current supply,
Under-Voltage or Over-Temperature state.
4
FLAGB
5
6
GND
ON
Ground
ON Control Input
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
-0.3
-0.3
Max.
Unit
VIN
VIN, ON, FLAGB to GND
VOUT to GND
6.0
20.0
1.4
V
V
PD
TA
Power Dissipation @ TA = 25°C(1)
Operating Temperature Range
Storage Temperature
W
-40
-65
85
°C
TSTG
JA
150
70
°C
Thermal Resistance, Junction to Ambient
³C/W
Human Body Model
Machine Model
4000
400
Electrostatic
Discharge Capability
ESD
V
Note:
1. Package power dissipation on 1 square inch pad, 2 oz. copper board.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance. Fairchild does not recommend exceeding them or
designing to Absolute Maximum Ratings.
Symbol
VIN
Parameter
Min.
1.8
Max.
5.5
Unit
V
Input Voltage
TA
Ambient Operating Temperature
-40
85
°C
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
4
Electrical Characteristics
VIN = 1.8 to 5.5 V, TA = -40 to +85°C unless otherwise noted. Typical values are at VIN = 3.3 V and TA = 25°C.
Symbol
Parameter
Conditions
Min.
Typ.
Max. Unit
Basic Operation
VIN
Operating Voltage
1.8
5.5
V
VIN=1.8 V to 3.3 V
VIN=3.3 V to 5.5 V
95
IOUT=0 mA,
VON Active
IQ
Quiescent Current
μA
110
200
1.0
ISHDN
Shutdown Current
Latch-Off Current
μA
μA
ILATCHOFF
VON=VIN, after and Over-Current Fault
50
10
VOUT = 20 V, VIN = VON = 0 V,
TA = 25°C
IR
Reverse Block Leakage Current
Reverse Breakdown Voltage
100
0.4
μA
IOUT = 250 mA
20
V
TA = 25°C, IOUT = 150 mA
TA = 85°C, IOUT = 150 mA
TA = -40°C, IOUT = 150 mA
VIN = 1.8 V
0.3
VDROP
Dropout Voltage
0.23
0.36
V
0.75
1.3
VIH
On Input Logic HIGH Voltage
V
V
VIN = 5.5 V
VIN = 1.8 V
0.5
1.0
1.0
VIL
ION
On Input Logic LOW Voltage
On Input Leakage
VIN = 5.5 V
VON = VIN or GND
µA
µA
VON = 0 V, VOUT = 0 V at VIN = 5.5 V,
TA = 85°C
1.0
ISWOFF
Off Switch Leakage
VON = 0 V, VOUT = 0 V at VIN = 3.3 V,
TA = 85°C
10
100
nA
V
VIN = 5.5 V, ISINK = 10 mA
VIN = 1.8 V, ISINK = 10 mA
0.2
0.3
FLAGB Output Logic Low Voltage
FLAGB Output High Leakage
Current
VIN = 5 V, Switch On
1.0
µA
Protections
ILIM
Current Limit
VIN = 3.3 V, VOUT = 2.0 V
Shutdown Threshold
Return from Shutdown
Hysteresis
200
1.5
300
140
130
10
400
mA
°C
Thermal Shutdown
UVLO
Under-Voltage Lockout
VIN Increasing
1.6
47
1.7
V
UVLOH
Under-Voltage Lockout Hysteresis
mV
Dynamic Characteristics
tON
tOFF
Turn-On Time
RL = 500 Ω, CL = 0.1 μF
RL = 500 Ω, CL = 0.1 μF
RL = 500 Ω, CL = 0.1 μF
RL = 500 Ω, CL = 0.1 μF
22
20
μs
μs
μs
μs
ms
Turn-Off Time
tRISE
tFALL
tBLANK
VOUT Rise Time
13
VOUT Fall Time
117
10
Over-Current Blanking Time
5
20
VIN = VON = 3.3 V, Moderate Over-
Current Condition
3
μs
Short Circuit Response Time
VIN = VON = 3.3 V, Hard Short
20
ns
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
5
Typical Performance Characteristics
Figure 4.
Quiescent Current vs. Input Voltage
Figure 5.
Quiescent Current vs. Temperature
Figure 6.
ISHUTDOWN Current vs. Temperature
Figure 7.
ISWITCH-OFF Current vs. Temperature
Figure 8.
Latch-off Current vs. Temperature
Figure 9.
Input Voltage vs. On Threshold Voltage
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
6
Typical Performance Characteristics
Figure 10. Current Limit vs. Output Voltage
Figure 11. Current Limit vs. Temperature
Figure 13. Drop Voltage vs. Temperature
Figure 15. tRISE/tFALL vs. Temperature
Figure 12. Drop Voltage vs. Input Voltage
Figure 14. tON/tOFF vs. Temperature
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
7
Typical Performance Characteristics
Figure 16. tBLANK vs. Temperature
Figure 17. tBLANK Response
Figure 18. tON Response
Figure 19. tOFF Response
Figure 20. Short Circuit Response Time
(Output Shorted to GND)
Figure 21. Current Limit Response Time
(Output has a 4.7 Ω load)
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
8
Description of Operation
The FPF2172 is a current limited switch that protects
systems and loads which can be damaged or disrupted
by the application of high currents. The core of the
device is a 0.125 Ω P-channel MOSFET and a controller
capable of functioning over a wide input operating range
of 1.8-5.5 V paired with a low forward voltage drop
Schottky diode for reverse blocking. The controller
protects against system malfunctions through current
limiting, under-voltage lockout and thermal shutdown.
The current limit is preset for 200 mA.
Current Limiting
The current limit guarantees that the current through the
switch doesn't exceed a maximum value while not
limiting at less than a minimum value. The minimum
current is 200 mA and the maximum current is 400 mA.
The device has a blanking time of 10 ms, nominally,
during which the switch will act as a constant current
source. At the end of the blanking time, the switch will
be turned-off and the FLAGB pin will activate to indicate
that current limiting has occurred.
On/Off Control
Under-Voltage Lockout (UVLO)
The ON pin controls the state of the switch. Activating
ON continuously holds the switch in the ON state so
long as there is no under-voltage on VIN or a junction
temperature in excess of 150°C. ON is active HI and
has a low threshold making it capable of interfacing with
low voltage signals. When the MOSFET is off, the
Schottky diode acts as a barrier so that no reverse
current can flow when VOUT is greater than VIN.
The under-voltage lockout turns-off the switch if the
input voltage drops below the under-voltage lockout
threshold. With the ON pin active the input voltage rising
above the under-voltage lockout threshold will cause a
controlled turn-on of the switch which limits current over-
shoots.
Thermal Shutdown
The thermal shutdown protects the die from internally or
externally generated excessive temperatures. During an
over-temperature condition the FLAGB is activated and
the switch is turned-off. The switch automatically turns-
on again if temperature of the die drops below the
threshold temperature.
Fault Reporting
Upon the detection of an over-current, an input under-
voltage, or an over-temperature condition, the FLAGB
signals the fault mode by activating LO. The FLAGB
goes LO at the end of the blanking time and is latched
LO and ON must be toggled to release it. FLAGB is an
open-drain MOSFET which requires a pull-up resistor
between VIN and FLAGB. During shutdown, the pull-
down on FLAGB is disabled to reduce current draw from
the supply.
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
9
Applications Information
Figure 22. Typical Application
Input Capacitor
To limit the voltage drop on the input supply caused by
transient in-rush currents when the switch turns-on into
When using the part, attention must be given to the
manual resetting of the part. Continuously resetting the
part at a high duty cycle when a short on the output is
present can cause the temperature of the part to
increase. The junction temperature will only be allowed
to increase to the thermal shutdown threshold. Once
this temperature has been reached, toggling ON will not
turn-on the switch until the junction temperature drops.
a
discharged load capacitor or a short-circuit, a
capacitor needs to be placed between VIN and GND. A
4.7 μF ceramic capacitor, CIN, must be placed close to
the VIN pin. A higher value of CIN can be used to further
reduce the voltage drop experienced as the switch is
turned on into a large capacitive load.
Output Capacitor
Board Layout
A 0.1 μF capacitor COUT, should be placed between
VOUT and GND. This capacitor will prevent parasitic
board inductances from forcing VOUT below GND when
the switch turns-off.
For best performance, all traces should be as short as
possible. To be most effective, the input and output
capacitors should be placed close to the device to
minimize the effects that parasitic trace inductances
may have on normal and short-circuit operation. Using
wide traces for VIN, VOUT and GND will help minimize
parasitic electrical effects along with minimizing the
case to ambient thermal impedance.
Power Dissipation
During normal operation as a switch, the power
dissipation is small and has little effect on the operating
temperature of the part. The parts with the higher
current limits will dissipate the most power and that will
only be typically:
ꢀ ꢁꢂꢃꢄ ꢅ ꢆꢇꢈꢉꢊ ꢋꢀ ꢌꢍꢎ ꢅ ꢌꢍꢎ ꢀ ꢏꢐꢌꢑꢒ
(1)
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FPF2172 • Rev. 1.1
10
(0.23)
(1.09)
0.05 C
3.0
A
(1.35)
(1.65)
6
4
B
(2.80)
3.0
(0.64)
(0.82)
0.05 C
1
(0.70)
3
PIN #1 IDENT
(0.65)
0.95 TYP
TOP VIEW
0.80
MAX
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
(0.20)
C
NOTES: UNLESS OTHERWISE SPECIFIED
A) CONFORMS TO JEDEC REGISTRATION,
MO-229, VARIATION WEEA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING FILE NAME: MKT-MLP06HREV2
0.05
0.00
SIDE VIEW
SEATING
PLANE
2.5 MAX.
0.41±0.05
1.17±0.05
0.82±0.05
0.79±0.05
0.61±0.05
0.45
0.20
3
1
PIN #1 IDENT
1.7 MAX.
0.10
0.05
C A B
C
0.2 MIN
4
6
0.45
0.30
0.95
1.90
BOTTOM VIEW
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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