FODM8071 [ONSEMI]
3.3V/5V 逻辑门级输出光耦合器，高抗扰性;
| 型号： | FODM8071 |
| 厂家： | 
ONSEMI |
| 描述： | 3.3V/5V 逻辑门级输出光耦合器，高抗扰性 局域网 输出元件 光电 |
| 文件： | 总11页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
3.3 Vꢀ/ꢀ5 V Logic Gate Output
Optocoupler with High
Noise Immunity
FODM8071
MFP5 4.1 x 4.4, 2.54P
CASE 100AM
Description
The FODM8071 is a 3.3 V / 5 V high−speed logic gate output
optocoupler, which supports isolated communications allowing digital
signals to communicate between systems without conducting ground
loops or hazardous voltages. It utilizes onsemi’s patented coplanar
MARKING DIAGRAM
®
packaging technology, OPTOPLANAR , and optimized IC design to
achieve high−immunity, characterized by high common mode
rejection specifications.
M8071
X
YY M
V
This high−speed logic gate output optocoupler, housed in a compact
5−pin Mini−Flat package, consists of a highspeed AlGaAs LED at the
input coupled to a CMOS detector IC at the output. The detector IC
comprises an integrated photodiode, a high−speed transimpedance
amplifier and a voltage comparator with an output driver. The CMOS
technology coupled with a high−efficiency LED achieves low power
consumption as well as very high speed (55 ns propagation delay,
20 ns pulse width distortion).
M8071 = Device Number
V
= DIN EN/IEC60747−5−5 Option
(Note: Only Appears on Parts Ordered
with This Option )
X
YY
= One Digit Year Code, e.g., ‘4’
= Two Digit Work Week,
Ranging from ‘01’ to ‘53’
M
= Assembly Package Code
Features
• High−noise Immunity Characterized by Common
PIN CONNECTIONS
Mode Rejection
♦ 20 kV/ms Minimum Common Mode Rejection
• High Speed
V
V
1
6
5
ANODE
DD
♦ 20 Mbit/s Date Rate (NRZ)
♦ 55 ns Maximum Propagation Delay
♦ 20 ns Maximum Pulse Width Distortion
♦ 30 ns Maximum Propagation Delay Skew
O
CATHODE
GND
3
4
• 3.3 V and 5 V CMOS Compatibility
• Specifications Guaranteed Over 3 V to 5.5 V Supply Voltage
and −40°C to +110°C Temperature Range
Figure 1. PIN CONNECTION
TRUTH TABLE
• Safety and Regulatory Approvals:
♦ UL1577, 3750 VAC
for 1 Minute
RMS
♦ DIN EN/IEC60747−5−5
• These are Pb−Free Devices
LED
Off
Output
High
Applications
On
Low
• Microprocessor System Interface:
2
– SPI, I C
• Industrial Fieldbus Communications:
– DeviceNet, CAN, RS485
RELATED RESOURCES
• Programmable Logic Control
• Isolated Data Acquisition System
• Voltage Level Translator
FOD8001 Product Folder
FOD0721 Product Folder
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
January, 2023 − Rev. 2
FODM8071/D
FODM8071
SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation”
only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
<150 V
<300 V
I–IV
I–III
RMS
RMS
Climatic Classification
40/110/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V
,
904
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge <5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1060
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge <5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
565
4000
≥5
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
°C
External Clearance
≥5
DTI
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
Input Current (Note 1)
≥0.4
150
200
300
T
S
I
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
PIN DEFINITIONS
Number
Name
ANODE
CATHODE
GND
Function Description
1
3
4
5
6
Anode
Cathode
Output Ground
Output Voltage
Output Supply Voltage
V
O
V
DD
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2
FODM8071
ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Value
−40 to +125
−40 to +110
−40 to +125
260 for 10 s
20
Unit
°C
T
Storage Temperature
Operating Temperature
Junction Temperature
STG
OPR
T
°C
T
J
°C
T
SOL
Lead Solder Temperature (Refer to Reflow Temperature Profile)
Forward Current
°C
IF
mA
V
V
R
Reverse Voltage
5
V
DD
Supply Voltage
0 to 6.0
V
V
O
Output Voltage
−0.5 to V + 0.5
V
DD
I
Average Output Current
10
40
70
mA
mW
mW
O
PD
Input Power Dissipation (Note 2, 4)
Output Power Dissipation (Note 3, 4)
I
PD
O
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Derate linearly from 95°C at a rate of −1.4 mW/°C.
3. Derate linearly from 100°C at a rate of −3.47 mW/°C.
4. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside
these ratings.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
−40
3.0
0
Max
+110
5.5
0.8
16
Unit
°C
T
A
Ambient Operating Temperature
Supply Voltages (Note 5)
Logic Low Input Voltages
Logic High Input Current
Logic Low Output Current
V
DD
V
V
V
FL
FH
OL
I
I
5
mA
mA
0
7
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. 0.1 mF bypass capacitor must be connected between 4 and 6.
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3
FODM8071
ELECTRICAL CHARACTERISTICS Apply over all recommended conditions (T = −40°C to +110°C, 3.0 VvV v5.5 V unless
A
DD
otherwise specified.) All typical values are measured at T = 25°C and V = 3.3 V.
A
DD
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
V
Forward Voltage
I = 10 mA (Figure 2)
1.05
5
1.35
15
1.80
−
V
V
F
F
BV
Input Reverse Breakdown Voltage
Threshold Input Current
I = 10 mA
R
R
I
(Figure 3)
−
2.8
5.0
mA
FHL
OUTPUT CHARACTERISTICS
I
Logic Low Output Supply Current
V
= 3.3 V, I = 10 mA
−
−
3.3
4.0
4.8
5.0
mA
mA
DDL
DD
F
(Figures 4 and 6)
V
DD
= 5.0 V, I = 10 mA
F
(Figures 4 and 7)
I
Logic High Output Supply Current
Logic High Output Voltage
V
V
V
V
V
V
I
= 3.3 V, I = 0 mA (Figure 5)
−
3.3
4.0
4.8
5.0
−
mA
mA
V
DDH
DD
DD
DD
DD
DD
DD
F
= 5.0 V, I = 0 mA (Figure 5)
−
F
V
V
V
V
V
−0.1 V
3.3
= 3.3 V, I = −20 mA, I = 0 mA
OH
DD
O
F
= 3.3 V, I = −4 mA, I = 0 mA
−0.5 V
−0.1 V
−0.5 V
−
3.1
−
V
O
F
DD
DD
DD
= 5.0 V, I = −20 mA, I = 0 mA
5.0
−
V
O
F
= 5.0 V, I = −4 mA, I = 0 mA
4.9
−
V
O
F
V
Logic Low Output Voltage
0.0027
0.27
0.01
0.80
V
= 20 mA, I = 10 mA
OL
O
F
I
O
= 4 mA, I = 10 mA
−
V
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
FODM8071
SWITCHING CHARACTERISTICS Apply over all recommended conditions (T = −40°C to +110°C, 3.0 VvV v5.5 V unless
A
DD
otherwise specified.) All typical values are measured at T = 25°C and V = 3.3 V.
A
DD
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Date Rate
(Note 6)
−
−
20
Mbps
t
Pulse Width
50
−
−
ns
ns
PW
t
Propagation Delay Time
to Logic Low Output
C = 15 pF
−
31
55
PHL
L
(Figure 8, 9 and 13)
t
Propagation Delay Time
to Logic High Output
C = 15 pF
−
−
25
55
20
ns
ns
PLH
L
(Figure 8, 9 and 13)
PWD
Pulse Width Distortion,
C = 15 pF
5.5
L
ȧt
t
ȧ
(Figure 10 and 11)
PHL − PLH
t
Propagation Delay Skew
C = 15 pF (Note 7)
−
−
−
30
−
ns
ns
PSK
L
t
R
Output Rise Time (10% to 90%)
Output Fall Time (90% to 10%)
(Figure 12 and 13)
(Figure 12 and 13)
5.8
5.3
40
t
F
−
−
ns
ȧCM ȧ
Common Mode Transient Immunity I = 0 mA, V >0.8 V ,
DD
at Output High
20
−
kV/ms
H
F
O
V
= 1000 V, T = 25°C
CM A
(Figure 14) (Note 8)
ȧCM ȧ
Common Mode Transient Immunity I = 5 mA, V <0.8 V,
20
40
4
−
−
kV/ms
L
F
V
O
at Output Low
= 1000 V, T = 25°C
CM A
(Figure 14) (Note 8)
C
Output Dynamic Power Dissipation
Capacitance (Note 9)
−
pF
PDO
6. Data rate is based on 10 MHz, 50% NRZ pattern with a 50 ns minimum bit time.
7. t is equal to the magnitude of the worst case difference in t and/or t that will be seen between any two units from the same
PLH
PSK
PHL
manufacturing date code that are operated at same case temperature ( 5°C), at the same operating conditions, with equal loads
(R = 350 WĂ and C = 15 pF), and with an input rise time less than 5 ns.
L
L
8. Common mode transient immunity at output high is the maximum tolerable positive dVcm/dt on the leading edge of the common mode
impulse signal, Vcm, to assure that the output will remain high. Common mode transient immunity at output low is the maximum tolerable
negative dVcm/dt on the trailing edge of the common pulse signal, Vcm, to assure that the output will remain low.
9. Unloaded dynamic power dissipation is calculated as follows: C x V x f + I + V where f is switched time in MHz.
PD
DD
DD
PD
ISOLATION CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VAC
V
ISO
Input−Output Isolation Voltage
f = 60 Hz, t = 1.0 min., I ≤10 mA
3750
−
−
I−O
RMS
(Note 10, 11)
11
R
C
Isolation Resistance
Isolation Capacitance
V
I−O
V
I−O
= 500 V (Note 10)
10
−
−
−
W
ISO
ISO
= 0 V, f = 1.0 Mhz (Note 10)
−
0.2
pF
10.Device is considered a two terminal device: pins 1 and 3 are shorted together and pins 4, 5 and 6 are shorted together.
11. 3,750 VAC for 1 minute duration is equivalent to 4,500 VAC for 1 second duration.
RMS
RMS
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5
FODM8071
TYPICAL PERFORMANCE CURVES
100
10
4.0
3.5
T = 110°C
A
V
V
= 5.0 V
= 3.3 V
DD
1
3.0
T = 25°C
A
DD
0.1
2.5
T = −40°C
A
0.01
2.0
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
−40 −20
0
20
40
60
80
100
V , FORWARD VOLTAGE (V)
F
T , AMBIENT TEMPERATURE (°C)
A
Figure 2. Input Forward Current
vs. Forward Voltage
Figure 3. Input Threshold Current
vs. Ambient Temperature
5.0
4.5
4.0
3.5
3.0
5.0
4.5
4.0
3.5
3.0
I = 0 mA
F
I = 10 mA
F
V
V
= 5.0 V
= 3.3 V
DD
V
V
= 5.0 V
= 3.3 V
DD
DD
DD
2.5
2.0
2.5
2.0
−40
−20
0
20
40
60
80
100
−40
−20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 4. Logic Low Output Supply Current
vs. Ambient Temperature
Figure 5. Logic High Output Supply Current
vs. Ambient Temperature
5.0
4.5
5.5
5.0
Frequency =10 Mhz
Duty Cycle =50%
Frequency =10 Mhz
Duty Cycle =50%
I
F
=10 mA
I =10 mA
F
V
DD
=3.3 V
V
DD
=5.0 V
T = 25°C
A
4.0
3.5
4.5
4.0
T = 25°C
A
T = −40°C
A
T = 110°C
A
T = −40°C
A
T = 110°C
A
3.0
2.5
3.5
3.0
0
2000
4000
6000
8000
10000
0
2000
4000
6000
8000
10000
f, INPUT FREQUENCY (kHz)
f, INPUT FREQUENCY (kHz)
Figure 6. Dynamic Logic Low Output Supply Current
vs. Input Frequency (VDD = 3.3 V)
Figure 7. Dynamic Logic Low Output Supply Current
vs. Input Frequency (VDD = 5.0 V)
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6
FODM8071
TYPICAL PERFORMANCE CURVES
50
45
40
35
30
25
20
15
10
40
Frequency =10 Mhz
Duty Cycle =50%
Frequency =10 Mhz
Duty Cycle =50%
T =25°C
A
I
F
=5 mA
35
30
25
20
15
10
t
PLH
t
t
t
PHL
PHL
PLH
t
t
PLH
PHL
t
PHL
t
PLH
V
DD
V
DD
= 3.3 V
= 5.0 V
V
DD
V
DD
= 3.3 V
= 5.0 V
4
6
8
10
12
14
16
−40
−20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
I , PULSE INPUT CURRENT (mA)
F
Figure 8. Propagation Delay
vs. Ambient Temperature
Figure 9. Propagation Delay
vs. Pulse Input Current
20
15
10
5
15
12
Frequency =10 Mhz
Duty Cycle =50%
Frequency =10 Mhz
Duty Cycle =50%
T
A
=25°C
I
F
=5 mA
9
6
V
V
= 3.3 V
= 5.0 V
DD
V
V
= 3.3 V
DD
DD
3
0
0
= 5.0 V
10
DD
−5
−40
4
6
8
14
16
−20
0
20
40
60
80
100
12
T , AMBIENT TEMPERATURE (°C)
A
I , PULSE INPUT CURRENT (mA)
F
Figure 10. Pulse Width Distortion
vs. Ambient Temperature
Figure 11. Pulse Width Distortion
vs. Pulse Input Current
10
Frequency =10 Mhz
Duty Cycle =50%
9
I
F
=5 mA
8
7
6
5
4
3
t
t
R
t
t
R
F
F
V
V
= 3.3 V
= 5.0 V
DD
DD
−40
−20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
Figure 12. Rise and Fall Time vs. Ambient Temperature
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7
FODM8071
TEST CIRCUITS
V
CC
Pulse Generator:
t = t = 5 ns
1
3
6
5
4
F
r
Z
O
= 50 W
0.1 mF
V
O
Monitoring
Node
Input
Monitoring
Node
C = 15 pF
L
R
IN
I = 5 mA
F
50%
Input
t
t
PHL
PLH
t
f
t
r
Output
90%
90%
50%
10%
10%
V
OL
Figure 13. Test Circuit for Propagation Delay, Rise Time, and Fall Time
I
F
V
6
5
4
1
3
DD
0.1 mF
Bypass
Output
(V
A
O)
B
V
FF
V
CM
Pulse Gen
V
CM
GND
V
OH
CM
H
Switching Pos. (A), I = 0
F
0.8 x V
DD
0.8 V
Switching Pos. (B), I = 5 mA
V
OL
F
CM
L
Figure 14. Test Circuit for Instantaneous Common Mode Rejection
Voltage
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8
FODM8071
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/s
Max. Ramp−down Rate = 6°C/s
T
P
260
240
220
200
180
160
140
120
100
80
t
P
T
L
T
smax
t
L
Preheat Area
T
smin
t
S
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Figure 15. Reflow Profile
Table 1. REFLOW PROFILE
Profile Freature
Pb−Free Assembly Profile
150°C
Temperature Minimum (Tsmin)
Temperature Maximum (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60 – 120 seconds
3°C/second maximum
217°C
S
Ramp−up Rate (t to t )
L
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 – 150 seconds
260°C +0°C / –5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C/second maximum
8 minutes maximum
P
L
Time 25°C to Peak Temperature
ORDERING INFORMATION
†
Part Number
FODM8071
Package
Mini−Flat 5−Pin, 4.1 x 4.4, 2.54P
Mini−Flat 5−Pin, 4.1 x 4.4, 2.54P
Shipping
100 Units / Tube
FODM8071R2
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
•
All packages are lead free per JEDEC: J−STD−020B standard.
OPTOPLANAR is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or
other countries.
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9
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
MFP5 4.1X4.4, 2.54P
CASE 100AM
ISSUE O
DATE 31 AUG 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13486G
MFP5 4.1X4.4, 2.54P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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