FNA40860B2 [ONSEMI]

智能功率模块 (IPM)，运动控制;


型号：	FNA40860B2
厂家：	ONSEMI
描述：	智能功率模块 (IPM)，运动控制电动机控制
文件：	总18页 (文件大小：1179K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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June 2011

Motion-SPM

FNA40860/B2

Smart Power Module

Features

General Description

It is an advanced motion-smart power module (Motion-SPM^TM

)

•

600V-8A 3-phase IGBT inverter bridge including control ICs

for gate driving and protection

that Fairchild has newly developed and designed to provide

very compact and high performance ac motor drives mainly tar-

geting low-power inverter-driven application like air conditioner

and refrigerator. It combines optimized circuit protection and

drive matched to low-loss IGBTs. System reliability is further

enhanced by the integrated under-voltage lock-out protection,

short-circuit protection, and temperature monitoring. The high

speed built-in HVIC provides opto-coupler-less single-supply

IGBT gate driving capability that further reduce the overall size

of the inverter system design. Each phase current of inverter

can be monitored separately due to the divided negative dc ter-

minals.

Easy PCB layout due to built-in bootstrap diode and V_Sout-

put

Divided negative dc-link terminals for inverter current sensing

applications

•

Single-grounded power supply due to built-in HVIC

Built-in thermistor for over-temperature monitoring

Isolation rating of 2000Vrms/min.

Applications

Additional Information

For further infomation, please see AN-9070 and FEB305-001 in

http://www.fairchildsemi.com

•

AC 100V ~ 253V three-phase inverter drive for small power

ac motor drives

•

Home appliances applications like air conditioner and refrig-

erator

Figure 1.

FNA40860/B2 Rev. C

www.fairchildsemi.com

Integrated Power Functions

•

600V-8A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)

Integrated Drive, Protection and System Control Functions

•

For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting

Control circuit under-voltage (UV) protection

•

For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)

Control supply circuit under-voltage (UV) protection

•

Fault signaling: Corresponding to UV (Low-side supply) and SC faults

Input interface: 3.3/5V CMOS compatible, Schmitt trigger input

Pin Configuration

Top View

V_B(U)(26)

V_S(U)(25)

V_TH(1)

R_TH(2)

V_B(V)(24)

V_S(V)(23)

P(3)

V_B(W)(22)

V_S(W)(21)

U(4)

V(5)

IN_(UH)(20)

Case Temperature (T_C)

Detecting Point

IN_(VH)(19)

IN_(WH)(18)

V_CC(H)(17)

V_CC(L)(16)

W(6)

COM(15)

IN_(UL)(14)

IN_(VL)(13)

IN_(WL)(12)

V_FO(11)

N_U(7)

N_V(8)

N_W(9)

C_SC(10)

Figure 2.

www.fairchildsemi.com

FNA40860/B2 Rev. C

Pin Descriptions

Pin Number

Pin Name

Pin Description

V_TH

R_TH

Thermistor Bias Voltage

Series Resistor for the Use of Thermistor (Temperature Detection)

Positive DC–Link Input

Output for U Phase

Output for V Phase

Output for W Phase

N_U

Negative DC–Link Input for U Phase

Negative DC–Link Input for V Phase

N_V

N_W

Negative DC–Link Input for W Phase

Capacitor (Low-pass Filter) for Short-Current Detection Input

Fault Output

C_SC

V_FO

IN_(WL)

IN_(VL)

IN_(UL)

COM

V_CC(L)

V_CC(H)

IN_(WH)

IN_(VH)

IN_(UH)

V_S(W)

V_B(W)

V_S(V)

V_B(V)

V_S(U)

V_B(U)

Signal Input for Low-side W Phase

Signal Input for Low-side V Phase

Signal Input for Low-side U Phase

Common Supply Ground

Low-Side Common Bias Voltage for IC and IGBTs Driving

High-Side Common Bias Voltage for IC and IGBTs Driving

Signal Input for High-side W Phase

Signal Input for High-side V Phase

Signal Input for High-side U Phase

High-side Bias Voltage Ground for W Phase IGBT Driving

High-side Bias Voltage for W Phase IGBT Driving

High-side Bias Voltage Ground for V Phase IGBT Driving

High-side Bias Voltage for V Phase IGBT Driving

High-side Bias Voltage Ground for U Phase IGBT Driving

High-side Bias Voltage for U Phase IGBT Driving

www.fairchildsemi.com

FNA40860/B2 Rev. C

Internal Equivalent Circuit and Input/Output Pins

V_TH(1)

R_TH(2)

P (3)

Thermister

(26) V_B(U)

UVB

(25) V_S(U)

UVS

OUT(UH)

(24) V_B(V)

U(4)

VVB

VVS

UVS

(23) V_S(V)

(22) V_B(W)

(21) V_S(W)

WVB

WVS

OUT(VH)

VVS

(20) IN_(UH)

IN(UH)

IN(VH)

IN(WH)

VCC

V (5)

(19) IN_(VH)

(18) IN_(WH)

(17) V_CC(H)

OUT(WH)

WVS

COM

W(6)

(16) V_CC(L)

(15) COM

VCC

OUT(UL)

OUT(VL)

COM

N_U(7)

N_V(8)

N_W(9)

(14) IN_(UL)

(13) IN_(VL)

IN(UL)

IN(VL)

IN(WL)

(12) IN_(WL)

(11) V_FO

VFO

(10) C_SC

C(SC)

OUT(WL)

Note:

1) Inverter high-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT.

2) Inverter low-side is composed of three IGBTs, freewheeling diodes and one control IC for each IGBT. It has gate drive and protection functions.

3) Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.

Figure 3.

www.fairchildsemi.com

FNA40860/B2 Rev. C

Absolute Maximum Ratings (T_J= 25°C, Unless Otherwise Specified)

Inverter Part

Symbol

V_PN

Parameter

Conditions

Applied between P- N_U, N_V, N_W

Rating

450

500

600

Units

Supply Voltage

V_PN(Surge)

V_CES

Supply Voltage (Surge)

Collector-emitter Voltage

± I_C

Each IGBT Collector Current

Each IGBT Collector Current (Peak)

T_C= 25°C, T_J＜ 150°C

± I_CP

T_C= 25°C, T_J＜ 150°C, V_PN= 300V, Under

1ms Pulse Width

P_C

T_J

Collector Dissipation

T_C= 25°C per One Chip

(Note 1)

Operating Junction Temperature

-40 ~ 150

°C

Note:

1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C.

Control Part

Symbol

V_CC

Parameter

Conditions

Rating

Units

Control Supply Voltage

Applied between V_CC(H), V_CC(L)- COM

V_BS

High-side Control Bias

Voltage

Applied between V_B(U)- V_S(U), V_B(V)- V_S(V)

V_B(W)- V_S(W)

V_IN

Input Signal Voltage

Applied between IN_(UH)

IN_(VH)

IN_(WH)

-0.3~V_CC+0.3

IN_(UL), IN_(VL), IN_(WL)- COM

Applied between V_FO- COM

Sink Current at V_FOPin

V_FO

I_FO

Fault Output Supply Voltage

Fault Output Current

-0.3~V_CC+0.3

V_SC

Current Sensing Input Voltage

Applied between C_SC- COM

-0.3~V_CC+0.3

Bootstrap Diode Part

Symbol

Parameter

Conditions

Rating

600

Units

V_RRM

I_F

Maximum Repetitive Reverse Voltage

Forward Current

T_C= 25°C

0.5

I_FP

T_J

Forward Current (Peak)

T_C= 25°C, Under 1ms Pulse Width

Operating Junction Temperature

-40 ~ 150

°C

Total System

Symbol

Parameter

Conditions

Rating

Units

V_PN(PROT)Self Protection Supply Voltage Limit

(Short Circuit Protection Capability)

V_CC= V_BS= 13.5 ~ 16.5V

T_J= 150°C, Non-repetitive, less than 2ms

400

T_STG

V_ISO

Storage Temperature

Isolation Voltage

-40 ~ 125

2000

°C

60Hz, Sinusoidal, AC 1 minute, Connection

Pins to heat sink plate

V_rms

Thermal Resistance

Symbol

Parameter

Conditions

Min. Typ. Max. Units

R_th(j-c)Q

R_th(j-c)F

Junction to Case Thermal

Resistance

Inverter IGBT part (per 1/6 module)

Inverter FWD part (per 1/6 module)

3.8

4.8

°C/W

Note:

2. For the measurement point of case temperature(T ), please refer to Figure 2.

www.fairchildsemi.com

FNA40860/B2 Rev. C

Electrical Characteristics (T_J= 25°C, Unless Otherwise Specified)

Inverter Part

Symbol

Parameter

Conditions

Min. Typ. Max. Units

V_CE(SAT)

Collector-Emitter Saturation V_CC= V_BS= 15V

I_C= 8A, T_J= 25°C

1.7

2.2

Voltage

V_IN= 5V

V_F

FWD Forward Voltage

Switching Times

V_IN= 0V

I_F= 8A, T_J= 25°C

1.7

0.75

0.20

0.80

0.30

0.15

0.75

0.20

0.80

0.30

0.15

2.2

1.25

0.45

1.30

0.55

t_ON

t_C(ON)

t_OFF

t_C(OFF)

t_rr

V_PN= 300V, V_CC= V_BS= 15V, I_C= 8A

T_J= 25°C

V_IN= 0V « 5V, Inductive Load

(Note 3)

0.45

t_ON

V_PN= 300V, V_CC= V_BS= 15V, I_C= 8A

T_J= 25°C

V_IN= 0V « 5V, Inductive Load

(Note 3)

0.45

1.25

0.45

1.30

0.55

t_C(ON)

t_OFF

t_C(OFF)

t_rr

I_CES

Collector-Emitter

Leakage Current

V_CE= V_CES

Note:

and t

include the propagation delay time of the internal drive IC. t

and t

are the switching time of IGBT itself under the given gate driving condition internally.

C(OFF)

OFF

C(ON)

For the detailed information, please see Figure 4.

100% I_C100% I_C

t_rr

V_CE

I_C

V_CE

V_IN

t_ON

t_OFF

t_C(ON)

t_C(OFF)

10% I_C

V_IN(ON)

V_IN(OFF)

10% V_CE

10% I_C

10% V_CE

90% I_C

(b) turn-off

(a) turn-on

Figure 4. Switching Time Definition

www.fairchildsemi.com

FNA40860/B2 Rev. C

Switching Loss (Typical)

Inductive Load, V_PN=300V, V_CC=15V, T_J=25℃

Inductive Load, V_PN=300V, V_CC=15V, T_J=150℃

600

500

400

300

200

100

600

500

400

300

200

100

IGBT Turn-ON, E_on

IGBT Turn-OFF, E_off

FRD Turn-OFF, E_rec

IGBT Turn-ON, E_on

IGBT Turn-OFF, E_off

FRD Turn-OFF, E_rec

COLLECTOR CURRENT, I_c[AMPERES]

Figure 5. Switching Loss Characteristics

Control Part

Symbol

Parameter

Conditions

Min. Typ. Max. Units

I_QCCH

I_QCCL

I_PCCH

Quiescent V_CCSupply V_CC(H)= 15V, IN_(UH,VH,WH)= 0V

V_CC(H)- COM

V_CC(L)- COM

0.10

2.65

0.15

Current

V_CC(L)= 15V, IN_{(UL,VL, WL)}= 0V

Operating V_CCSupply V_CC(H)

= 15V, f_PWM= 20kHz, V_CC(H)- COM

Current

duty=50%, applied to one PWM

signal input for High-side

I_PCCL

V_CC(L)

15V, f_PWM

20kHz, V_CC(L)- COM

3.65

duty=50%, applied to one PWM

signal input for Low-side

I_QBS

I_PBS

Quiescent V_BSSupply V_BS= 15V, IN_{(UH, VH, WH)}= 0V

Current

V_B(U)- V_S(U), V_B(V)

V_S(V), V_B(W)- V_S(W)

0.30

2.00

Operating V_BSSupply V_CC= V_BS= 15V, f_PWM= 20kHz, V_B(U)- V_S(U), V_B(V)

Current

duty=50%, applied to one PWM V_S(V), V_B(W)- V_S(W)

signal input for High-side

V_FOH

V_FOL

Fault Output Voltage

V_SC= 0V, V_FOCircuit: 4.7kW to 5V Pull-up

V_SC= 1V, V_FOCircuit: 4.7kW to 5V Pull-up

4.5

0.5

0.55

13.0

13.5

12.5

13.0

V_SC(ref)Short Circuit Trip Level V_CC= 15V (Note 4)

0.45

10.5

11.0

10.0

10.5

0.5

UV_CCD

UV_CCR

UV_BSD

UV_BSR

t_FOD

Detection Level

Reset Level

Supply Circuit

Under-Voltage

Protection

Detection Level

Reset Level

Fault-out Pulse Width

V_IN(ON)ON Threshold Voltage Applied between IN_(UH), IN_(VH), IN_(WH), IN_(UL), IN_(VL)

2.6

IN_(WL)- COM

V_IN(OFF)OFF Threshold Voltage

0.8

R_TH

Resistance of

Thermister

@T_TH=25°C, (Note 5)

@T_TH=100°C

2.9

Note:

4. Short-circuit current protection is functioning only at the low-sides.

5. T is the temperature of thermister itselt. To know case temperature (T ), please make the experiment considering your application.

www.fairchildsemi.com

FNA40860/B2 Rev. C

R-T Curve

600

550

500

450

400

350

300

250

200

150

100

R-T Curve in 50℃ ~ 125℃

100

110

120

Temperature [℃]

-20 -10

90 100 110 120

Temperature T_TH[℃]

Figure. 6. R-T Curve of The Built-in Thermistor

Bootstrap Diode Part

Symbol

Parameter

Conditions

Min. Typ. Max. Units

V_F

t_rr

Forward Voltage

Reverse Recovery Time

I_F= 0.1A, T_C= 25°C

2.5

Built in Bootstrap Diode V_F-I_FCharacteristic

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

T_C=25℃

10 11 12 13 14 15

V_F[V]

Note:

6. Built in bootstrap diode includes around 15Ωresistance characteristic.

Figure 7. Built in Bootstrap Diode Characteristic

www.fairchildsemi.com

FNA40860/B2 Rev. C

Recommended Operating Conditions

Value

Symbol

Parameter

Conditions

Units

Min. Typ. Max.

V_PN

V_CC

V_BS

Supply Voltage

Applied between P - N_U, N_V, N_W

300

400

16.5

18.5

Control Supply Voltage

High-side Bias Voltage

Applied between V_CC(H), V_CC(L)-COM

Applied between V_B(U)-V_S(U), V_B(V)-V_S(V),V_B(W)-V_S(W)

13.5

13.0

-1

dV_CC/dt, Control supply variation

dV_BS/dt

V/ms

t_dead

Blanking Time for

Preventing Arm-short

For Each Input Signal

1.5

f_PWM

V_SEN

PWM Input Signal

-40°C ＜ T_J＜ 150°C

kHz

Voltage for Current

Sensing

Applied between N_U, N_V, N_W- COM

(Including surge voltage)

-4

P_WIN(ON)Minimun Input Pulse

(Note 7)

0.5

Width

P_WIN(OFF)

Note:

7. SPM might not make response if input pulse width is less than the recommanded value.

Allowable Maximum Output Current

f_SW=5kHz

V_DC=300V, V_CC=V_BS=15V

T_J＜ 150℃ , T_C≤ 125℃

f_SW=15kHz

M.I.=0.9, P.F.=0.8

Sinusoidal PWM

90 100 110 120 130 140

Case Temperature, T_C[℃]

Note:

8. The allowable output current value may be different from the actual application.

Figure 8. Allowable Maximum Output Current

Package Marking and Ordering Information

Device Marking

FNA40860

Device

FNA40860

FNA40860B2

Package

SPM26-AAA

SPM26-AAC

Reel Size

Tape Width

Quantity

FNA40860B2

www.fairchildsemi.com

FNA40860/B2 Rev. C

Mechanical Characteristics and Ratings

Limits

Parameter

Conditions

Units

Min.

Typ.

Max.

+120

0.8

Device Flatness

Note Figure 9

N•m

kg•cm

Mounting Torque

Mounting Screw: - M3

Recommended 0.7N•m

Recommended 7.1kg•cm

0.6

6.2

0.7

7.1

8.1

Note Figure 10

Weight

Figure 9. Flatness Measurement Position

Pre - Screwing : 1→2

Final Screwing : 2→1

Note:

9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.

10. Avoid one side tightening stress. Fig.10 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to be damaged.

The Pre-Screwing torque is set to 20~30% of maximum torque rating.

Figure 10. Mounting Screws Torque Order

www.fairchildsemi.com

FNA40860/B2 Rev. C

Time Charts of SPMs Protective Function

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_CCR

UV_CCD

Control

Supply Voltage

Output Current

Fault Output Signal

a1 : Control supply voltage rises: After the voltage rises UV_CCR, the circuits start to operate when next input is applied.

a2 : Normal operation: IGBT ON and carrying current.

a3 : Under voltage detection (UV_CCD).

a4 : IGBT OFF in spite of control input condition.

a5 : Fault output operation starts.

a6 : Under voltage reset (UV_CCR).

a7 : Normal operation: IGBT ON and carrying current.

Figure 11. Under-Voltage Protection (Low-side)

Input Signal

Protection

RESET

SET

RESET

Circuit State

UV_BSR

Control

Supply Voltage

UV_BSD

Output Current

High-level (no fault output)

Fault Output Signal

b1 : Control supply voltage rises: After the voltage reaches UV_BSR, the circuits start to operate when next input is applied.

b2 : Normal operation: IGBT ON and carrying current.

b3 : Under voltage detection (UV_BSD).

b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.

b5 : Under voltage reset (UV_BSR

)

b6 : Normal operation: IGBT ON and carrying current

Figure 12. Under-Voltage Protection (High-side)

www.fairchildsemi.com

FNA40860/B2 Rev. C

Lower arms

control input

Protection

Circuit state

SET

RESET

Internal IGBT

Gate-Emitter Voltage

Output Current

SC Reference Voltage

Sensing Voltage

of the shunt

resistance

CR circuit time

constant delay

Fault Output Signal

(with the external shunt resistance and CR connection)

c1 : Normal operation: IGBT ON and carrying current.

c2 : Short circuit current detection (SC trigger).

c3 : Hard IGBT gate interrupt.

c4 : IGBT turns OFF.

c5 : Input “L” : IGBT OFF state.

c6 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.

c7 : IGBT OFF state

Figure 13. Short-Circuit Current Protection (Low-side Operation only)

Input/Output Interface Circuit

5V-Line (MCU or Control power)

R_PF=10kΩ

SPM

IN_(UH)IN_(VH)

IN_(WH)

IN_(UL)IN_(VL)

IN_(WL)

MCU

V_FO

COM

Note:

1) RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s

printed circuit board. The SPM input signal section integrates 5kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the sig-

nal voltage drop at input terminal.

2) The logic input is compatible with standard CMOS outputs.

Figure 14. Recommended CPU I/O Interface Circuit

www.fairchildsemi.com

FNA40860/B2 Rev. C

HVIC

(26) V_B(U)

P (3)

U (4)

VB(U)

C_BS

C_BSC

(25) V_S(U)

(20) IN

VS(U)

OUT(UH)

VS(U)

R_S

(UH)

IN(UH)

VB(V)

Gating UH

Gating VH

Gating WH

(24) V_B(V)

(23) V_S(V)

C_BSC

VS(V)

R_S

(19) IN

(VH)

OUT(VH)

VS(V)

IN(VH)

V (5)

(22) V_B(W)

(21) V_S(W)

VB(W)

VS(W)

C_BSC

R_S

(18) IN

(WH)

C_DCS

V_DC

IN(WH)

VCC

OUT(WH)

VS(W)

(17) V_CC(H)

(15) COM

15V line

W (6)

C_PSC_PS

C_PS

C_SPC15

C_SP15

COM

5V line

LVIC

(16) V_CC(L)

VCC

VFO

OUT(UL)

OUT(VL)

OUT(WL)

R_PF

R_SU

N_U(7)

N_V(8)

N_W(9)

C_SPC05

C_SP05

R_S

(11) V_FO

Fault

C_PF

C_BPF

R_S

(14) IN

(UL)

R_SV

Gating UL

Gating VL

Gating WL

IN(UL)

IN(VL)

R_S

(13) IN

(VL)

(12) IN

(WL)

IN(WL)

COM

CSC

C_SC

(10) C_SC

(1) V_TH

(2) R_TH

C_PSC_PS

C_PS

R_SW

R_F

THERMISTOR

R_TH

U-Phase Current

V-Phase Current

W-Phase Current

Input Signal for

Short-Circuit Protection

Temp. Monitoring

Note:

1) To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)

2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.

3) V output is open drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes I up to 1mA. Please refer

to Figure14.

4) C

of around 7 times larger than bootstrap capacitor C is recommended.

SP15

5) Input signal is High-Active type. There is a 5kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention

of input signal oscillation. R C time constant should be selected in the range 50~150ns. (Recommended R =100Ω, C =1nF)

6) To prevent errors of the protection function, the wiring around R and C should be as short as possible.

7) In the short-circuit protection circuit, please select the R C time constant in the range 1.5~2ms.

8) Each capacitor should be mounted as close to the pins of the SPM as possible.

9) To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive

capacitor of around 0.1~0.22mF between the P&GND pins is recommended.

10) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.

11) The zener diode should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals. (Recommanded zener diode=24V/1W)

12) Please choose the electrolytic capacitor with good temperature characteristic in C . Also, choose 0.1~0.2mF R-category ceramic capacitors with good temperature and

frequency characteristics in C

BSC

13) For the detailed information, please refer to the AN-9070 and FEB305-001.

Figure 15. Typical Application Circuit

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FNA40860/B2 Rev. C

Detailed Package Outline Drawings(FNA40860)

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FNA40860/B2 Rev. C

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FNA40860/B2 Rev. C

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FNA40860B2 [ONSEMI]

相关型号：

FNA40860_1010

FNA41060

FNA41060

FNA41060B2

FNA41060B2

FNA41060_1010

FNA41560

FNA41560

FNA41560B2

FNA41560B2

FNA41560T2

FNA41560_1010