FJV42MTF [ONSEMI]
NPN 高电压晶体管;
| 型号： | FJV42MTF |
| 厂家： | 
ONSEMI |
| 描述： | NPN 高电压晶体管 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2014
FJV42
NPN High-Voltage Transistor
3
2
SOT-23
1
Marking: 1DF
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
Marking
Package
Packing Method
Tape and Reel
FJV42MTF
1DF
SOT-23 3L
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
350
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
350
V
6
V
500
mA
°C
TSTG
Storage Temperature Range
-55 to +150
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
350
Unit
mW
Power Dissipation
RθJA
Thermal Resistance, Junction-to-Ambient
357
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2006 Fairchild Semiconductor Corporation
FJV42 Rev. 1.1.0
www.fairchildsemi.com
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
350
350
6
Max.
Unit
V
V(BR)CEO Collector-Emitter Breakdown Voltage(2) IC = 5.0 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC = 100 μA, IE = 0
V
IE = 100 μA, IC = 0
V
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = 200 V, IE = 0
VEB = 5.0 V, IC = 0
0.1
0.1
μA
μA
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
40
hFE
DC Current Gain(2)
VCE(sat) Collector-Emitter Saturation Voltage(2) IC = 20 mA, IB = 2.0 mA
0.5
0.9
V
V
VBE(sat) Base-Emitter Saturation Voltage(2)
IC = 20 mA, IB = 2.0 mA
IC = 10 mA, VCE = 20 V,
f = 100 MHz
fT
Current Gain - Bandwidth Product
Output Capacitance
50
MHz
pF
VCB = 20 V, IE = 0,
f = 1.0 MHz
Ccb
3
Note:
2. Pulse test: Pulse width ≤ 300 μs, duty cycle ≤ 2%
© 2006 Fairchild Semiconductor Corporation
FJV42 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
1000
10
IC = 10 IB
VCE = 10V
VBE(sat)
1
100
VCE(sat)
0.1
10
0.01
1
10
100
1
10
100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
100
10
1
120
100
IE = 0
f = 1MHz
VCE = 20V
80
60
40
20
0
0.1
1
10
100
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
Figure 4. Current Gain Bandwidth Product
© 2006 Fairchild Semiconductor Corporation
FJV42 Rev. 1.1.0
www.fairchildsemi.com
3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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