FJL6920TU [ONSEMI]

NPN型三重扩散平面硅晶体管;
FJL6920TU
型号: FJL6920TU
厂家: ONSEMI    ONSEMI
描述:

NPN型三重扩散平面硅晶体管

局域网 放大器 晶体管
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FJL6920  
High Voltage Color Display Horizontal  
Deflection Output  
High Collector-Base Breakdown Voltage : BV  
= 1700V  
CBO  
Low Saturation Voltage : V (sat) = 3V (Max.)  
For Color Monitor  
CE  
1
TO-264  
1.Base 2.Collector 3.Emitter  
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Rating  
1700  
800  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
V
V
CBO  
CEO  
EBO  
6
V
I
I
20  
A
C
*
30  
A
CP  
P
200  
W
°C  
°C  
C
J
T
T
150  
-55 ~ 150  
STG  
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
1
Units  
mA  
µA  
mA  
V
I
I
I
Collector Cut-off Current  
V
V
V
=1400V, R =0  
CES  
CB  
CB  
EB  
BE  
Collector Cut-off Current  
=800V, I =0  
10  
1
CBO  
EBO  
E
Emitter Cut-off Current  
=4V, I =0  
C
BV  
BV  
BV  
Collector-Base Breakdown Voltage  
Collector-EmitterBreakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
I =500µA, I =0  
1700  
800  
6
CBO  
CEO  
EBO  
C
E
I =5mA, I =0  
V
C
B
I =500µA, I =0  
V
E
C
h
h
V
V
=5V, I =1A  
8
5.5  
FE1  
FE2  
CE  
CE  
C
=5V, I =11A  
8.5  
3
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Storage Time  
I =11A, I =2.75A  
V
V
CE  
C
B
I =11A, I =2.75A  
1.5  
3
BE  
C
B
t
*
V
=200V, I =10A, R =20  
µs  
µs  
STG  
CC  
C
L
I
=2.0A, I = - 4.0A  
t *  
Fall Time  
B1  
B2  
0.15  
0.2  
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Typ  
Max  
0.625  
Units  
°C/W  
R
Thermal Resistance, Junction to Case  
θjC  
©2001 Fairchild Semiconductor Corporation  
Rev. A, May 2001  
Typical Characteristics  
16  
100  
10  
1
IB=4.0A  
VCE = 5V  
14  
12  
10  
8
Ta = 25oC  
Ta = 125oC  
IB=2.0A  
IB=1.5A  
Ta = - 25oC  
IB=1.0A  
6
IB=0.5A  
IB=0.2A  
4
2
0
0
2
4
6
8
10  
0.1  
1
10  
100  
IC [A], COLLECTOR CURRENT  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristics  
Figure 2. DC Current Gain  
10  
10  
IC = 5 IB  
IC = 3 IB  
Ta = 125oC  
Ta = 125oC  
1
1
Ta = 25oC  
Ta = 25oC  
Ta = - 25oC  
Ta = - 25oC  
0.1  
0.1  
0.01  
0.1  
0.01  
0.1  
1
10  
100  
1
10  
100  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Collector-Emitter Saturation Voltage  
10  
16  
VCC = 200V,  
IC = 10A, IB1 = 2A  
VCE = 5V  
14  
12  
10  
8
tSTG  
1
tF  
6
0.1  
4
2
125oC  
0.4  
25oC  
0.6  
- 25oC  
0.8  
0.01  
0
0.0  
1
10  
0.2  
1.0  
1.2  
VBE [V], BASE-EMITTER VOLTAGE  
IB2 [A], REVERSE BASE CURRENT  
Figure 5. Base-Emitter On Voltage  
Figure 6. Resistive Load Switching Time  
©2001 Fairchild Semiconductor Corporation  
Rev. A, May 2001  
Typical Characteristics (Continued)  
100  
VCC = 200V,  
VCC = 200V,  
IC = 10A, IB2 = - 4A  
IB1 = 2A, IB2 = - 4A  
10  
10  
tSTG  
tSTG  
1
1
tF  
0.1  
tF  
0.1  
0.01  
1
10  
1
10  
IB1 [A], FORWARD BASE CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 7. Resistive Load Switching Time  
Figure 8. Resistive Load Switching Time  
100  
40  
RB2 = 0, IB1 = 15A  
IC (Pulse)  
IC (DC)  
t = 10ms  
t = 100ms  
35  
t = 1ms  
VCC = 30V, L = 200µH  
10  
30  
25  
20  
1
15  
VBE(off) = -6V  
0.1  
0.01  
10  
VBE(off) = -3V  
TC = 25oC  
Single Pulse  
5
1
1
10  
100  
1000  
10000  
10  
100  
1000  
10000  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 9. Forward Bias Safe Operating Area  
Figure 10. Reverse Bias Safe Operating Area  
300  
250  
200  
150  
100  
50  
0
0
25  
50  
75  
100  
125  
150  
175  
TC [OC], CASE TEMPERATURE  
Figure 11. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A, May 2001  
18.30  
17.70  
5.20  
4.80  
20.20  
19.80  
A
16.60  
B
7.40  
7.00  
1.00  
R2.00  
2.00  
12.00  
6.20  
5.80  
3.50  
3.10  
C
C
0.254  
A
B
1.20  
0.80  
9.10  
8.90  
21.62  
21.02  
C
0.50  
20.20  
19.80  
C
R1.00  
1.70  
1.30  
1.50  
4.05  
2.60  
2.40  
3.20  
2.80  
C
1.50  
1.50  
3.10  
2.50  
C
2.70  
2.30  
20.50  
19.50  
C
C
2X  
1.25  
0.90  
C
M
0.254  
A
B
0.85  
0.50  
5.75  
5.15  
5.75  
5.15  
C
FRONT VIEW  
SIDE VIEW  
BACK VIEW  
3.70  
3.30  
5.20  
4.80  
0.15  
BOTTOM VIEW  
NOTES:  
A. PACKAGE REFERENCE: JEDEC TO264  
VARIATION AA.  
B. ALL DIMENSIONS ARE IN MILLIMETERS.  
C
OUT OF JEDEC STANDARD VALUE.  
D. DIMENSION AND TOLERANCE AS PER ASME  
Y14.5-1994.  
E. DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR PROTRUSIONS.  
F. THIS PACKAGE IS INTENDED ONLY FOR  
"FS PKG CODE AR"  
G. DRAWING FILE NAME: TO264A03REV2  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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