FGH40N60UFDTU [ONSEMI]
IGBT，600V，40A，场截止;
| 型号： | FGH40N60UFDTU |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，40A，场截止 局域网 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - Field Stop
600 V, 40 A
FGH40N60UFD
Description
Using novel Field Stop IGBT technology, ON Semiconductor’s
field stop IGBTs offer the optimum performance for solar inverter,
UPS, welder, microwave oven, telecom, ESS and PFC applications
where low conduction and switching losses are essential.
www.onsemi.com
V
I
C
CES
Features
600 V
40 A
• High Current Capability
C
E
• Low Saturation Voltage: V
• High Input Impedance
• Fast Switching
= 1.8 V @ I = 40 A
C
CE(sat)
• This Device is Pb−Free and is RoHS Compliant
G
Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS
E
C
G
COLLECTOR
(FLANGE)
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH40N60
UFD
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FGH40N60UFD
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
January, 2020 − Rev. 2
FGH40N60UFD/D
FGH40N60UFD
ABSOLUTE MAXIMUM RATINGS
Symbol
Description
Ratings
Unit
V
V
CES
GES
Collector to Emitter Voltage
Gate to Emitter Voltage
600
V
20
V
Transient Gate−to−Emitter Voltage
30
80
V
I
C
Collector Current
T
C
T
C
T
C
T
C
T
C
= 25°C
= 100°C
= 25°C
= 25°C
A
40
A
I
(Note 1)
Pulsed Collector Current
120
A
CM
P
D
Maximum Power Dissipation
290
W
W
°C
°C
°C
= 100°C
116
T
J
Operating Junction Temperature
Storage Temperature Range
−55 to +150
−55 to +150
300
T
STG
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
THERMAL CHARACTERISTICS
Symbol
(IGBT)
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
−
Max.
0.43
1.45
40
Unit
R
R
_C/W
_C/W
_C/W
q
JC
(Diode)
−
q
JC
R
−
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Packing
Method
Part Number
Top Mark
Package
Reel Size
Tape Width
Qty per Tube
FGH40N60UFDTU
FGH40N60UFD
TO−247
Tube
N/A
N/A
30
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2
FGH40N60UFD
ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Collector to Emitter Breakdown Voltage
/ DT Temperature Coefficient of Breakdown Voltage
V
V
= 0 V, I = 250 mA
600
−
−
−
V
V/°C
mA
CES
GE
C
DBV
= 0 V, I = 250 mA
−
0.6
CES
J
GE
C
I
Collector Cut−Off Current
G−E Leakage Current
V
CE
V
GE
= V
= V
, V = 0 V
−
−
−
−
250
400
CES
GES
CES
GE
I
, V = 0 V
nA
GES
CE
ON CHARACTERISTICS
V
G−E Threshold Voltage
I
I
I
= 250 mA, V = V
GE
4.0
5.0
1.8
6.5
2.4
V
V
GE(th)
C
C
C
CE
V
Collector to Emitter Saturation Voltage
= 40 A, V = 15 V,
−
CE(sat)
GE
= 40 A, V = 15 V,
GE
−
2.0
−
V
T
= 125°C
C
DYNAMIC CHARACTERISTICS
V
= 30 V, V = 0 V,
C
Input Capacitance
−
−
−
2110
200
60
−
−
−
pF
pF
pF
CE
GE
ies
f = 1 MHz
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
SWITCHING CHARACTERISTICS
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
24
44
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 25°C
C
T
Turn−Off Delay Time
Fall Time
112
30
−
ns
d(off)
T
f
60
−
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.19
0.46
1.65
mJ
mJ
mJ
on
off
E
−
E
−
ts
V
= 400 V, I = 40 A,
C
T
Turn−On Delay Time
Rise Time
CC
G
−
−
−
−
−
−
−
24
45
−
−
−
−
−
−
−
ns
ns
d(on)
R
= 10 W, V = 15 V,
GE
T
r
Inductive Load, T = 125°C
C
T
Turn−Off Delay Time
Fall Time
120
40
ns
d(off)
T
f
ns
E
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
1.2
0.69
1.89
mJ
mJ
mJ
on
off
E
E
ts
V
CE
V
GE
= 400 V, I = 40 A,
Q
Total Gate Charge
−
−
−
120
14
−
−
−
nC
nC
nC
C
g
= 15 V
Q
ge
Q
gc
Gate to Emitter Charge
Gate to Collector Charge
58
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
FGH40N60UFD
ELECTRICAL CHARACTERISTICS OF THE DIODE (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
= 25°C
Min
−
Typ
1.95
1.85
45
Max
2.6
−
Unit
I = 20 A
T
C
V
V
FM
Diode Forward Voltage
F
T
= 125°C
T = 25°C
C
−
C
I = 20 A,
ns
T
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
−
−
F
di /dt = 200 A/ms
F
T
= 125°C
= 25°C
−
140
75
−
C
T
nC
Q
−
−
C
rr
T
C
= 125°C
−
375
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS
Collector−Emitter Voltage, V (V)
Collector−Emitter Voltage, V (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Collector−Emitter Voltage, V (V)
CE
Gate−Emitter Voltage,V (V)
GE
Figure 3. Typical Saturation
Voltage Characteristics
Figure 4. Transfer Characteristics
Gate−Emitter Voltage, V (V)
Case Temperature T (5C)
GE
C
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 6. Saturation Voltage vs. VGE
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5
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gate−Emitter Voltage, V (V)
Gate−Emitter Voltage, V (V)
GE
GE
Figure 7. Saturation Voltage vs VGE
Figure 8. Saturation Voltage vs VGE
Collector−Emitter Voltage, V (V)
Gate Charge, Qg(nC)
CE
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
Collector−Emitter Voltage, V (V)
CE
Gate Resistance, R (W)
G
Figure 11. SOA Characteristics
Figure 12. Turn−on Characteristics
vs. Gate Resistance
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6
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gate Resistance, R (W)
G
Collector Current, I (A)
C
Figure 14. Turn−on Characteristics
Figure 13. Turn−off Characteristics
vs. Collector Current
vs. Gate Resistance
Collector Current, I (A)
C
Gate Resistance, R (W)
G
Figure 15. Turn−off Characteristics vs.
Figure 16. Switching Loss vs.
Gate Resistance
Collector Current
Collector Current, I (A)
C
Collector−Emitter Voltage, V (V)
CE
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn Off Switching SOA Characteristics
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7
FGH40N60UFD
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Forward Voltage, V (V)
Reverse Voltage, V (V)
F
R
Figure 19. Forward Characteristics
Figure 20. Reverse Current
Forward Current, I (A)
Forward Current, I (A)
F
F
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
PDM
t1
t2
Rectangular Pulse Duration (sec)
Figure 23. Transient Thermal Impedance of IGBT
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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